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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas UPD44325362BF5-E33-FQ1

Name: UPD44325362BF5-E33-FQ1
Brand: Renesas
SKU: UPD44325362BF5-E33-FQ1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: UPD44325362BF5-E33-FQ1

Manufacturer:: Renesas

Category:: Memory

Package:: -

Datasheet:: UPD44325362BF5-E33-FQ1.pdf

Description:: QDR SRAM, 1MX36, 0.45NS

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Product details

Overview

UPD44325362BF5-E33-FQ1 from Renesas Electronics is a 1,048,576-word × 36-bit synchronous Quad Data Rate II (QDR II) SRAM with 3.3 ns clock cycle time (300 MHz), HSTL interface, and 165-pin plastic BGA (15 × 17) package. It supports concurrent read/write operations, two-word burst, and clock-stop capability for low-power standby in high-bandwidth memory subsystems used in network packet buffers and FPGA co-processor caches.

For engineers reviewing the UPD44325362BF5-E33-FQ1 datasheet, UPD44325362BF5-E33-FQ1 pinout, UPD44325362BF5-E33-FQ1 application, or UPD44325362BF5-E33-FQ1 equivalent, key selection considerations include its 36-bit wide DDR interface, user-programmable output impedance (35–70 Ω), PLL-enabled timing margining, dual-clock domain (K/K# input, C/C# output), and JTAG 1149.1 test access for system-level validation.

Technical Context

The UPD44325362BF5-E33-FQ1 implements a true QDR II architecture with physically separate read and write data ports, enabling simultaneous read and write transactions without bus contention. Its internal burst counter and synchronous address/data registers are clocked on the rising edges of K (read control) and K# (write control), while output data is edge-aligned to C/C# for precise flight-time matching.

It integrates an on-die PLL for jitter-tolerant operation and wide data-valid windows, supports HSTL Class I signaling at 1.5 V VDDQ, and features programmable ZQ calibration via external resistor for impedance-matched signal integrity across high-speed PCB traces. Clock-stop mode restores full operation within 20 μs upon resumption.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	1,048,576 words × 36 bits = 36 Mbit total capacity; enables single-cycle access to 72-bit data chunks via two-word burst.
Clock Cycle Time	3.3 ns (300 MHz); defines minimum clock period for full-speed operation with guaranteed setup/hold timing margins.
Supply Voltage	VDD = 1.8 ± 0.1 V; VDDQ = 1.4 V to 1.8 V; decoupled core and I/O supplies reduce noise coupling in mixed-signal systems.
Interface Standard	HSTL Class I compliant; ensures compatibility with FPGA and ASIC memory controllers using 1.5 V swing and VREF = VDDQ/2 reference.
Output Impedance	User-programmable 35–70 Ω via ZQ pin; allows dynamic tuning to match PCB trace impedance and minimize reflections.
Power Consumption	IDD = 770 mA max (300 MHz, TA = 0–70°C); ISB1 = 340 mA max in NOP standby; supports thermal-aware system power budgeting.
JTAG Support	IEEE 1149.1 compliant TAP controller; enables boundary-scan testing and in-system debug without dedicated test pads.

Pinout & Package

Package: 165-pin plastic BGA (15 × 17 mm, ball pitch 0.8 mm), RoHS-compliant, lead-free finish. Thermal resistance θ_ja = 21.2°C/W (4-layer board, still air).

Pin/Terminal	Circuit Role	Design Meaning
K, K#	Input clock pair	Rising edges latch read addresses (K) and write addresses/data (K#); 180° phase alignment required for timing closure.
C, C#	Output clock pair	Control output data timing; C# rising edge clocks first word, C rising edge clocks second word; can be tied HIGH to use K/K# instead.
D0–D35	Synchronous data inputs	36-bit parallel write data path; registered on K/K# rising edges; supports byte-select writes via BW0#–BW3#.
Q0–Q35	Synchronous data outputs	36-bit parallel read data path; edge-aligned to C/C#; high-impedance during clock stop or NOP.
R#, W#	Read/write strobes	Active-low synchronous commands; both HIGH = NOP; must meet setup/hold relative to K rising edge.
BW0#–BW3#	Byte write enables	Four independent active-low signals controlling 9-bit subwords; enable partial writes without disturbing adjacent bytes.
ZQ	Impedance calibration input	Connect to external resistor to ground (175–350 Ω) to set output driver strength; auto-calibrates every 20 μs after power-up.
VREF	HSTL reference voltage	Nominally VDDQ/2; provides threshold for all HSTL inputs; must be stable before clock initialization.
TCK, TMS, TDI, TDO	JTAG test interface	1.8 V I/O level; TCK must be tied to VSS if unused; enables production test and field diagnostics.

Key Features

Feature	Design Value
Concurrent Read/Write Ports	Eliminates arbitration overhead in real-time buffer applications-e.g., simultaneous packet ingress/egress in switch ASICs.
Two-Tick Burst Operation	Delivers 72 bits per clock cycle (36-bit × 2 words), maximizing DDR bus utilization without command overhead.
Programmable Output Impedance	35–70 Ω range via ZQ pin enables one-time or runtime PCB trace impedance compensation without layout revision.
PLL-Based Timing Margining	Widens data valid window and supports future frequency scaling up to 300 MHz while tolerating >0.2 ns clock jitter.
Clock-Stop Mode	Reduces standby current to 340 mA and resumes full operation in ≤20 μs-critical for burst-mode networking equipment.
HSTL Class I Compliance	Guarantees interoperability with Xilinx Virtex-5/6/7 and Intel Stratix IV/V FPGAs using standard memory controller IP.

Applications

Network Packet Buffer	FPGA Co-Processor Cache
Use Scenario: Line-rate buffering of 10 GbE packet headers and payloads in Layer 2/3 switches. IC Role / Device Role / Timing Role: High-throughput, low-latency shared memory between ingress and egress pipelines with concurrent read/write access. Use Value: 36-bit width + 300 MHz clock enables 10.8 GB/s aggregate bandwidth-sufficient for full-duplex 10 GbE line rate with zero packet loss under burst traffic.	Use Scenario: Off-chip cache for FPGA-based digital signal processors performing real-time FFT or filtering on streaming sensor data. IC Role / Device Role / Timing Role: Low-latency, deterministic-access memory supporting dual-port burst reads/writes synchronized to FPGA logic clocks. Use Value: Two-word burst and echo clocks (CQ/CQ#) provide precise data-valid timing, reducing FPGA timing closure effort by >40% versus asynchronous SRAMs.
Telecom Baseband Memory	High-Speed Test Equipment Buffer
Use Scenario: Interleaved storage of I/Q samples in 4G/LTE baseband processing units with strict latency constraints. IC Role / Device Role / Timing Role: Synchronous memory interfaced directly to DSP cores requiring predictable 3.3 ns cycle timing and minimal jitter sensitivity. Use Value: PLL circuitry and HSTL I/O ensure <0.45 ns output-to-clock skew, meeting 3GPP TS 36.104 EVM requirements for 20 MHz LTE channels.	Use Scenario: Acquisition buffer in automated test equipment capturing high-speed serial data streams at 200+ MS/s. IC Role / Device Role / Timing Role: High-reliability, low-jitter memory staging raw ADC samples prior to post-processing in host CPU or FPGA. Use Value: Clock-stop capability reduces power during idle acquisition phases, extending thermal headroom and enabling fanless enclosure designs.

Network Packet Buffer

FPGA Co-Processor Cache

Use Scenario: Line-rate buffering of 10 GbE packet headers and payloads in Layer 2/3 switches.

IC Role / Device Role / Timing Role: High-throughput, low-latency shared memory between ingress and egress pipelines with concurrent read/write access.

Use Value: 36-bit width + 300 MHz clock enables 10.8 GB/s aggregate bandwidth-sufficient for full-duplex 10 GbE line rate with zero packet loss under burst traffic.

Use Scenario: Off-chip cache for FPGA-based digital signal processors performing real-time FFT or filtering on streaming sensor data.

IC Role / Device Role / Timing Role: Low-latency, deterministic-access memory supporting dual-port burst reads/writes synchronized to FPGA logic clocks.

Use Value: Two-word burst and echo clocks (CQ/CQ#) provide precise data-valid timing, reducing FPGA timing closure effort by >40% versus asynchronous SRAMs.

Telecom Baseband Memory

High-Speed Test Equipment Buffer

Use Scenario: Interleaved storage of I/Q samples in 4G/LTE baseband processing units with strict latency constraints.

IC Role / Device Role / Timing Role: Synchronous memory interfaced directly to DSP cores requiring predictable 3.3 ns cycle timing and minimal jitter sensitivity.

Use Value: PLL circuitry and HSTL I/O ensure <0.45 ns output-to-clock skew, meeting 3GPP TS 36.104 EVM requirements for 20 MHz LTE channels.

Use Scenario: Acquisition buffer in automated test equipment capturing high-speed serial data streams at 200+ MS/s.

IC Role / Device Role / Timing Role: High-reliability, low-jitter memory staging raw ADC samples prior to post-processing in host CPU or FPGA.

Use Value: Clock-stop capability reduces power during idle acquisition phases, extending thermal headroom and enabling fanless enclosure designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C2663KV18-333BZXC	36 Mbit (1M × 36), 333 MHz (3.0 ns), 165-ball BGA, VDD = 1.8 V, VDDQ = 1.5 V; identical HSTL I/O and burst architecture.	Higher max frequency (333 MHz) but tighter AC timing margins; requires stricter PCB layout for signal integrity.	Select when system clock exceeds 300 MHz and layout supports <0.15 ns inter-pair skew.
AS7C33618B-333BIN	36 Mbit (1M × 36), 333 MHz (3.0 ns), 165-ball BGA, VDD = 1.8 V, VDDQ = 1.5 V; supports same QDR II protocol but lacks ZQ calibration.	No programmable output impedance-requires fixed 50 Ω termination; no DLL# pin for PLL bypass.	Select for cost-sensitive designs where board-level impedance control is already optimized and PLL debugging is unnecessary.

Compared with CY7C2663KV18-333BZXC and AS7C33618B-333BIN, the UPD44325362BF5-E33-FQ1 offers superior signal integrity flexibility via ZQ calibration and robust debug support via DLL# and JTAG, making it preferred for first-pass hardware validation and thermally constrained deployments.

Availability

UPD44325362BF5-E33-FQ1 is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor caching, and telecom baseband memory applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for UPD44325362BF5-E33-FQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The UPD44325362BF5-E33-FQ1 belongs to Renesas' QDR II SRAM product line, engineered specifically for high-bandwidth, low-latency memory subsystems in networking, telecommunications, and high-performance computing where deterministic timing and concurrent access are critical.

FAQ

What is the operating temperature range for UPD44325362BF5-E33-FQ1?

The UPD44325362BF5-E33-FQ1 is rated for commercial temperature operation from 0°C to +70°C, as indicated by the "FQ1" suffix in the part number. It meets all AC/DC specifications across this range when powered with VDD = 1.8 ± 0.1 V and VDDQ = 1.4–1.8 V. For extended temperature (-40°C to +85°C), the variant UPD44325362BF5-E33Y-FQ1 must be used.

Does UPD44325362BF5-E33-FQ1 support true concurrent read and write operations?

Yes, the UPD44325362BF5-E33-FQ1 implements physically separate read and write data paths (Q0–Q35 and D0–D35), allowing simultaneous read and write transactions without bus arbitration or turnaround cycles. This is confirmed in the datasheet block diagram and truth table, enabling 100% bus utilization in applications like network switch buffers.

How is output impedance calibrated on UPD44325362BF5-E33-FQ1?

Output impedance is calibrated via the ZQ pin: connect an external resistor (175–350 Ω) from ZQ to ground to set driver strength to 0.2 × RQ. The device auto-calibrates every 20 μs after power-up and tracks supply/temperature drift. Direct connection to VDDQ minimizes impedance; grounding or leaving ZQ floating is prohibited.

Can UPD44325362BF5-E33-FQ1 operate without the PLL enabled?

Yes-asserting DLL# = LOW disables the PLL, allowing operation at frequencies below the PLL's 120 MHz lower limit. However, AC/DC characteristics are not guaranteed in this mode, and it is intended only for board-level debug. For production operation, DLL# must be tied HIGH (e.g., via 10 kΩ resistor to VDDQ).

What are the power sequencing requirements for UPD44325362BF5-E33-FQ1?

Power must be applied in this order: VSS → VDD → VDDQ → VREF → VIN. VDD and VDDQ may be ramped simultaneously if VDDQ does not exceed VDD by more than 0.5 V. After power stabilization, a stable clock must run for ≥20 μs to lock the PLL before issuing commands. Power-down follows the reverse sequence.

UPD44325362BF5-E33-FQ1 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

Programmable:: Not Verified

Memory Type:: -

Memory Format:: -

Technology:: -

Memory Size:: -

Memory Organization:: -

Memory Interface:: -

Clock Frequency:: -

Write Cycle Time - Word, Page:: -

Access Time:: -

Voltage - Supply:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

UPD44325362BF5-E33-FQ1 FAQ

1.How can I place an order for UPD44325362BF5-E33-FQ1 through Aetrix?

Please submit a Request for Quotation (RFQ) for UPD44325362BF5-E33-FQ1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPD44325362BF5-E33-FQ1 reliable?

The price and inventory of UPD44325362BF5-E33-FQ1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD44325362BF5-E33-FQ1 is usually 5 days.

3.What payment methods are accepted for UPD44325362BF5-E33-FQ1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPD44325362BF5-E33-FQ1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UPD44325362BF5-E33-FQ1?

UPD44325362BF5-E33-FQ1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPD44325362BF5-E33-FQ1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPD44325362BF5-E33-FQ1?

For technical support, including UPD44325362BF5-E33-FQ1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD44325362BF5-E33-FQ1 requirements.

6.How does Aetrix verify that UPD44325362BF5-E33-FQ1 is sourced from the original manufacturer or authorized distributors?

All UPD44325362BF5-E33-FQ1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD44325362BF5-E33-FQ1 meets industry standards.

7.What is the process for return or replacement of UPD44325362BF5-E33-FQ1?

All UPD44325362BF5-E33-FQ1 units undergo pre-shipment inspection (PSI). If there is an issue with UPD44325362BF5-E33-FQ1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPD44325362BF5-E33-FQ1 part is unused and in its original packaging.

Return procedure for UPD44325362BF5-E33-FQ1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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