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Renesas UPD44325362BF5-E33-FQ1-A

Part No.:
UPD44325362BF5-E33-FQ1-A
Manufacturer:
Renesas
Category:
Memory
Package:
-
Datasheet:
AetrixUPD44325362BF5-E33-FQ1-A.pdf
Description:
QDR SRAM, 1MX36, 0.45NS
Quantity:
Payment:
Payment
Shipping:
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Inventory:11,965

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Product details

Overview

UPD44325362BF5-E33-FQ1-A from Renesas Electronics is a 1,048,576-word × 36-bit synchronous Quad Data Rate II (QDR II) SRAM with 3.3 ns clock cycle time (300 MHz), HSTL interface, 1.8 V core supply, and 165-pin plastic BGA package. It supports concurrent read/write operations, two-word burst, and clock-stop capability for low-power standby in high-bandwidth networking and packet buffering applications.

For engineers reviewing the UPD44325362BF5-E33-FQ1-A datasheet, UPD44325362BF5-E33-FQ1-A pinout, UPD44325362BF5-E33-FQ1-A application, or UPD44325362BF5-E33-FQ1-A equivalent, key selection criteria include QDR II timing compliance, HSTL Class I signal integrity, 36-bit wide data path for burst-aligned packet storage, and PLL-enabled output clock skew matching via C/C# and echo clocks CQ/CQ#.

Technical Context

This device implements a true dual-port architecture with physically separate read and write data paths, enabling simultaneous access without arbitration delay. Its internal burst counter and synchronous address/data registers are clocked on K/K# rising edges for writes and K rising edge for reads, while output data is synchronized to C/C# rising edges with tight flight-time matching.

The integrated PLL provides a wide output data valid window and supports frequency scaling up to 300 MHz. User-programmable output impedance (35–70 Ω) via ZQ pin and HSTL-compliant I/O ensure robust signal integrity across high-speed backplanes and switch fabric interfaces.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization1,048,576 words × 36 bits = 36 Mbit total capacity; enables single-cycle storage of full 36-bit packet headers or descriptors.
Clock Cycle Time3.3 ns (300 MHz); defines minimum clock period for sustained DDR read/write throughput of 600 MT/s per data line.
Supply VoltageVDD = 1.8 ± 0.1 V; strict tolerance ensures stable core logic operation under dynamic load in telecom line cards.
I/O InterfaceHSTL Class I compliant; guarantees controlled-impedance signaling, reduced noise margin, and compatibility with ASIC/FPGA memory controllers.
Package165-pin plastic BGA (15 × 17 mm); supports high-density routing and thermal dissipation in multi-layer PCBs for embedded networking hardware.
Burst OperationFixed 2-word burst; delivers two consecutive data words per clock transition, optimizing bandwidth utilization in packet-switching buffers.
Output ClockingC/C# and CQ/CQ# pairs provide matched flight time; eliminates board-level timing skew between clock and data at 300 MHz.

Pinout & Package

Package: 165-pin plastic BGA (15 × 17 mm), RoHS-compliant, lead-free finish.

Pin/TerminalCircuit RoleDesign Meaning
A[0:18]Synchronous Address Input19-bit address bus registered on K rising edge for read; K# rising edge for write; supports 1M-word addressing.
D[0:35]Synchronous Data Input36-bit parallel input path; latched on both K and K# rising edges during write cycles for burst-aligned data capture.
Q[0:35]Synchronous Data Output36-bit parallel output path; driven on C# and C rising edges for deterministic 2-word burst delivery with matched flight time.
R#, W#, BW0#–BW3#Control InputsActive-low read/write enable and four independent byte-write masks; enable selective 9-bit sub-word writes within 36-bit word.
K, K#, C, C#, CQ, CQ#Clock & Echo SignalsK/K# drive internal timing; C/C# control output timing; CQ/CQ# provide data-valid strobes tightly matched to Q outputs.
ZQ, VREF, VDD, VDDQ, VSSPower & CalibrationZQ sets output impedance (35–70 Ω); VREF = VDDQ/2 reference for HSTL inputs; VDDQ powers I/O drivers independently from core VDD.

Key Features

FeatureDesign Value
Concurrent Read/Write PortsEliminates arbitration latency in full-duplex packet buffering-read next packet while writing current one.
PLL-Based Output TimingWidens data valid window by >1.2 ns at 300 MHz, easing PCB layout constraints and improving setup/hold margin.
User-Programmable Output ImpedanceZQ pin allows real-time impedance tuning (35–70 Ω) to match trace impedance, reducing reflections on high-speed buses.
Two-Tick Burst ArchitectureDelivers 2×36-bit data per clock cycle-maximizes bus utilization without requiring complex burst-length logic in controller.
IEEE 1149.1 JTAG SupportEnables boundary-scan testing of interconnects in dense BGA layouts, critical for production test coverage in telecom modules.

Applications

High-Speed Packet BufferingNetwork Switch Fabric Memory

Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/3 switches before forwarding decisions.

IC Role / Device Role / Timing Role: QDR II SRAM acts as low-latency, concurrent-access buffer with deterministic 3.3 ns cycle time and echo-clock–synchronized output timing.

Use Value: Enables 600 MT/s sustained throughput per 36-bit port, supporting 10 Gbps+ line-rate switching without head-of-line blocking.

Use Scenario: Serving as shared memory for crossbar arbitration logic in modular chassis-based routers.

IC Role / Device Role / Timing Role: Provides dual-port, burst-aligned storage for pointer tables and queue descriptors accessed simultaneously by multiple ASICs.

Use Value: Concurrent read/write avoids serialization bottlenecks; HSTL I/O ensures signal integrity across 150 mm backplane traces.

Telecom Line Card MemoryBaseband Processing Buffer

Use Scenario: Buffering CPRI/OBSAI frames between fronthaul PHY and MAC layers in 4G/5G remote radio units.

IC Role / Device Role / Timing Role: Acts as timing-critical frame buffer with clock-stop capability to reduce power during idle periods.

Use Value: 20 μs PLL lock time and clock-stop recovery allow rapid resumption of 300 MHz operation after sleep states.

Use Scenario: Holding FFT/IFFT intermediate results in LTE eNodeB baseband processing chains.

IC Role / Device Role / Timing Role: Supplies 36-bit-wide scratchpad memory with burst-aligned access for parallel DSP engine loads/stores.

Use Value: Two-word burst mode matches typical 72-bit FFT butterfly data width, halving required memory transactions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C2663KV18-333BZXC36 Mbit (1M × 36), 333 MHz max, 1.8 V core, 165-pin BGA-but uses SSTL-2 I/O, not HSTL.Requires level-shifting or controller I/O reconfiguration; less suitable for legacy HSTL-only ASIC interfaces.Select only if system already uses SSTL-2 infrastructure and timing margins permit tighter setup/hold windows.
AS7C362000B-333BIN36 Mbit (1M × 36), 333 MHz, 1.8 V, 165-pin BGA-but lacks PLL, echo clocks, and ZQ calibration.No output skew compensation or programmable impedance; limits usable trace length and maximum frequency in noisy environments.Prefer for cost-sensitive, lower-frequency (<250 MHz) designs where board-level timing closure is achievable without PLL assistance.

Compared with CY7C2663KV18-333BZXC and AS7C362000B-333BIN, UPD44325362BF5-E33-FQ1-A delivers superior signal integrity via HSTL Class I compliance, precise clock/data alignment through CQ/CQ# echo clocks, and field-tunable output impedance-critical for reliable 300 MHz operation in telecom-grade hardware.

Availability

UPD44325362BF5-E33-FQ1-A is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, and telecom line card applications requiring stable component supply, long-term lifecycle support, and guaranteed RoHS-compliant sourcing.

Supply support for UPD44325362BF5-E33-FQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The UPD44325362BF5-E33-FQ1-A belongs to Renesas' QDR II SRAM product line, engineered specifically for high-bandwidth, low-latency memory subsystems in networking and telecommunications infrastructure where deterministic timing and signal integrity are non-negotiable.

FAQ

What is the operating temperature range for UPD44325362BF5-E33-FQ1-A?

The UPD44325362BF5-E33-FQ1-A is rated for commercial ambient operation from 0°C to +70°C, as indicated by the "FQ1-A" suffix in its ordering code. This range is validated across all electrical and timing specifications in the R10DS0038EJ0200 datasheet, including AC characteristics at 300 MHz and DC supply current limits.

Does UPD44325362BF5-E33-FQ1-A support byte-write functionality?

Yes, UPD44325362BF5-E33-FQ1-A supports granular 9-bit byte writes using four active-low byte-write enable signals: BW0#, BW1#, BW2#, and BW3#. Each controls a distinct 9-bit segment of the 36-bit data bus, allowing partial-word updates without read-modify-write cycles.

How does the ZQ pin function in UPD44325362BF5-E33-FQ1-A?

The ZQ pin on UPD44325362BF5-E33-FQ1-A enables dynamic output impedance calibration. Connected to a precision resistor to ground, it adjusts Q, CQ, and CQ# driver strength to maintain 35–70 Ω output impedance, compensating for voltage/temperature drift every 20 μs after power-up.

Can UPD44325362BF5-E33-FQ1-A operate without its PLL enabled?

Yes-asserting DLL# = LOW disables the PLL, permitting operation at frequencies below 120 MHz using only K/K# for timing. However, AC/DC characteristics are not guaranteed in this mode, and echo clock alignment (CQ/CQ#) degrades; normal operation requires DLL# = HIGH tied to VDDQ.

What is the purpose of the CQ and CQ# pins on UPD44325362BF5-E33-FQ1-A?

The CQ and CQ# pins on UPD44325362BF5-E33-FQ1-A are synchronous echo clocks that rise in precise alignment with Q[0:35] data outputs. They serve as hardware data-valid indicators for receiving devices, eliminating need for external timing margin calculations in high-speed interfaces.

UPD44325362BF5-E33-FQ1-A Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
-
Memory Format:
-
Technology:
-
Memory Size:
-
Memory Organization:
-
Memory Interface:
-
Clock Frequency:
-
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

UPD44325362BF5-E33-FQ1-A FAQ

1.How can I place an order for UPD44325362BF5-E33-FQ1-A through Aetrix?

Please submit a Request for Quotation (RFQ) for UPD44325362BF5-E33-FQ1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPD44325362BF5-E33-FQ1-A reliable?

The price and inventory of UPD44325362BF5-E33-FQ1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD44325362BF5-E33-FQ1-A is usually 5 days.

3.What payment methods are accepted for UPD44325362BF5-E33-FQ1-A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPD44325362BF5-E33-FQ1-A transactions.

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4.How is shipping managed for UPD44325362BF5-E33-FQ1-A?

UPD44325362BF5-E33-FQ1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPD44325362BF5-E33-FQ1-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPD44325362BF5-E33-FQ1-A?

For technical support, including UPD44325362BF5-E33-FQ1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD44325362BF5-E33-FQ1-A requirements.

6.How does Aetrix verify that UPD44325362BF5-E33-FQ1-A is sourced from the original manufacturer or authorized distributors?

All UPD44325362BF5-E33-FQ1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD44325362BF5-E33-FQ1-A meets industry standards.

7.What is the process for return or replacement of UPD44325362BF5-E33-FQ1-A?

All UPD44325362BF5-E33-FQ1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPD44325362BF5-E33-FQ1-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPD44325362BF5-E33-FQ1-A part is unused and in its original packaging.

Return procedure for UPD44325362BF5-E33-FQ1-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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