Renesas UPD44325362BF5-E40-FQ1-A
- Part No.:
- UPD44325362BF5-E40-FQ1-A
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-FBGA
- Datasheet:
-
UPD44325362BF5-E40-FQ1-A.pdf
- Description:
- IC SRAM 36MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:515
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Product details
Overview
UPD44325362BF5-E40-FQ1-A from Renesas Electronics is a 1,048,576-word × 36-bit synchronous Quad Data Rate II (QDR II) SRAM with 4.0 ns clock cycle time (250 MHz), 1.8 V core supply, HSTL interface, and 165-pin plastic BGA (15 × 17) packaging. It supports concurrent read/write operations, burst-2 DDR transactions, and is used in high-bandwidth networking buffers and packet forwarding engines.
For engineers reviewing the UPD44325362BF5-E40-FQ1-A datasheet, UPD44325362BF5-E40-FQ1-A pinout, UPD44325362BF5-E40-FQ1-A application, or UPD44325362BF5-E40-FQ1-A equivalent, key selection considerations include its 36-bit wide synchronous interface, dual-clock (K/K# and C/C#) timing architecture, user-programmable output impedance (35–70 Ω), PLL-enabled output data valid window, and JTAG 1149.1 test access support.
Technical Context
This QDR II SRAM implements separate read and write data ports with independent address latching on K (read) and K# (write) rising edges. Its internal burst counter and echo clocks (CQ/CQ#) tightly align output data to system timing, enabling precise flight-time matching between clock and data at 250 MHz.
The device integrates a PLL for jitter tolerance and wide data valid windows, supports clock-stop mode with 20 μs recovery, and uses HSTL Class I I/O with VREF-referenced inputs. Output impedance is calibrated via ZQ pin using an external resistor to ground, and byte-write control is implemented through four active-low BW0#–BW3# signals.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory organization | 1,048,576 words × 36 bits (36 Mbit total) |
| Clock cycle time | 4.0 ns - enables 250 MHz DDR operation with guaranteed timing margins |
| Supply voltage | VDD = 1.8 ± 0.1 V; VDDQ = 1.4–1.8 V - supports low-power, noise-immune HSTL I/O |
| Interface standard | JEDEC HSTL Class I - ensures compatibility with FPGA and ASIC memory controllers |
| Package | 165-pin plastic BGA (15 × 17 mm) - provides high pin count and thermal performance for dense PCB layouts |
| Operating temperature | 0 °C to +70 °C - qualified for commercial/industrial embedded systems |
| Output impedance control | User-programmable 35–70 Ω via ZQ pin - enables trace impedance matching without external termination |
Pinout & Package
Package: 165-pin plastic BGA (15 × 17 mm), lead-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A[0–18] | Synchronous address input | 19-bit address bus registered on K rising edge for read, K# for write; supports 1M-word addressing |
| D[0–35] | Synchronous data input | 36-bit parallel write data aligned to K/K# rising edges; supports byte-select via BW0#–BW3# |
| Q[0–35] | Synchronous data output | 36-bit parallel read data synchronized to C/C# rising edges (or K/K# if C/C# tied HIGH) |
| K, K# | Input clock pair | Differential clock inputs - K latches read controls/address, K# latches write address/data |
| C, C# | Output clock pair | Programmable output timing reference - C# clocks first data word, C clocks second word |
| CQ, CQ# | Echo clock outputs | Output-aligned clocks tightly matched to Q outputs; indicate data validity without requiring external delay lines |
| R#, W# | Read/write strobes | Active-low commands - initiate burst-2 read or write on next K/K# rising edge |
| BW0#–BW3# | Byte write enables | Four independent active-low signals controlling 9-bit byte writes across 36-bit bus |
| ZQ | Impedance calibration input | Connect to external resistor to ground (175–350 Ω) to set Q/CQ/CQ# output impedance to 35–70 Ω |
| DLL# | PLL disable | Active-low input - disables PLL for low-frequency debug; must be HIGH for normal 250 MHz operation |
| TMS, TDI, TCK, TDO | JTAG 1149.1 interface | Fully compliant 1.8 V boundary-scan test port; TCK must tie to VSS if unused |
| VDD, VDDQ, VSS, VREF | Power and reference | VDD (1.8 V core), VDDQ (1.4–1.8 V I/O), VSS (ground), VREF (VDDQ/2 reference for HSTL inputs) |
Key Features
| Feature | Design Value |
|---|---|
| Concurrent read/write ports | Enables full-duplex memory access - critical for packet buffering in switches/routers where ingress and egress paths operate simultaneously |
| Two-tick burst operation | Fixed 2-word burst per transaction - minimizes bus arbitration overhead and maximizes DDR bandwidth utilization |
| Separate K/K# and C/C# clock domains | Decouples address/control timing from output timing - allows independent optimization of flight time and skew matching |
| Internally self-timed write control | Eliminates need for external write-enable pulse generation - simplifies controller logic and improves timing margin robustness |
| PLL-based output data valid window | Extends data valid window across process/voltage/temperature variations - ensures reliable capture at 250 MHz in high-speed systems |
| Programmable output impedance (35–70 Ω) | Reduces need for external series termination resistors - lowers BOM cost and PCB area while maintaining signal integrity |
Applications
| High-Speed Network Switch Buffer | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing and forwarding variable-length Ethernet packets in a 10 GbE switch fabric with strict latency requirements. IC Role / Device Role / Timing Role: Dual-port QDR II SRAM acting as ingress/egress packet buffer with simultaneous read (forwarding) and write (reception) on same clock cycle. Use Value: 36-bit width and 250 MHz DDR operation deliver 18 Gbps sustained bandwidth - sufficient for line-rate packet buffering without bottlenecking the switch ASIC. | Use Scenario: Buffering voice-over-IP (VoIP) payload streams in a carrier-grade DSLAM line card supporting 256 concurrent channels. IC Role / Device Role / Timing Role: Synchronous SRAM providing deterministic, low-jitter memory access for real-time voice sample buffering and echo cancellation processing. Use Value: Clock-stop capability and 20 μs fast restart enable power-gating during idle periods - reducing average power by >40% without interrupting call continuity. |
| Baseband Processor L2 Cache | Test Equipment Pattern Memory |
Use Scenario: Serving as Level 2 cache for a multi-core baseband processor in 4G LTE femtocell equipment. IC Role / Device Role / Timing Role: High-density, low-latency SRAM interfaced directly to the processor's QDR-capable memory controller for instruction and data caching. Use Value: 165-pin BGA footprint and HSTL I/O ensure clean signal routing at 250 MHz - meeting stringent EMI and timing closure requirements in compact RF modules. | Use Scenario: Storing stimulus/response patterns in automated test equipment (ATE) for high-speed digital IC validation. IC Role / Device Role / Timing Role: Deterministic-access memory delivering precisely timed vector sequences to DUT pins via high-speed digital I/O channels. Use Value: Echo clocks (CQ/CQ#) provide hardware-synchronized data valid indication - eliminating need for complex deskew circuitry and improving pattern accuracy at 250 MHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C2663KV18-400BZXC | 36 Mbit (1M × 36), 400 MHz (2.5 ns), 1.8 V core, 165-pin BGA - higher speed, identical organization and interface | Requires tighter layout control due to 400 MHz timing; not drop-in compatible due to faster AC specs and different DLL behavior | Select when system requires >250 MHz bandwidth and can meet stricter setup/hold margins |
| AS7C33618B-25JIN | 36 Mbit (1M × 36), 250 MHz, but asynchronous interface - no K/K#/C/C# clocks, no burst or echo clocks | Lacks QDR timing features; suitable only for non-concurrent, non-burst applications with simpler controller logic | Select only for cost-sensitive designs where QDR-specific advantages (concurrency, timing precision) are unnecessary |
Compared with CY7C2663KV18-400BZXC and AS7C33618B-25JIN, the UPD44325362BF5-E40-FQ1-A delivers optimal balance of proven 250 MHz QDR II performance, integrated impedance tuning, and mature industrial qualification - making it ideal for volume production in telecom and networking infrastructure where reliability and timing predictability outweigh peak speed needs.
Availability
UPD44325362BF5-E40-FQ1-A is available at Aetrix Electronics and suitable for high-bandwidth network switching, telecom line card buffering, and baseband processor cache applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.
Supply support for UPD44325362BF5-E40-FQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The UPD44325362BF5-E40-FQ1-A belongs to Renesas' QDR II SRAM product line, engineered specifically for high-throughput, low-latency buffering in networking and communications equipment where deterministic timing and concurrent access are essential.
FAQ
What is the maximum operating frequency supported by the UPD44325362BF5-E40-FQ1-A?
The UPD44325362BF5-E40-FQ1-A is rated for 250 MHz operation with a 4.0 ns clock cycle time. This specification is validated across the full commercial temperature range (0 °C to +70 °C) and includes margin for setup/hold timing, jitter, and voltage variation. Operation above 250 MHz is not guaranteed and exceeds the device's qualified performance envelope.
Does the UPD44325362BF5-E40-FQ1-A support true concurrent read and write operations?
Yes, the UPD44325362BF5-E40-FQ1-A implements physically separate read and write data ports with independent address latching - enabling simultaneous read and write transactions on the same clock cycle. This concurrency is fundamental to its QDR II architecture and is confirmed in the datasheet truth table and block diagram.
How is output impedance calibrated on the UPD44325362BF5-E40-FQ1-A?
Output impedance on the UPD44325362BF5-E40-FQ1-A is calibrated via the ZQ pin, which must be connected to a precision resistor (175–350 Ω) to ground. The device internally adjusts Q, CQ, and CQ# driver strength to 0.2 × RQ, yielding 35–70 Ω output impedance. Calibration occurs automatically every 20 μs after power-up.
Can the UPD44325362BF5-E40-FQ1-A operate without its PLL enabled?
The UPD44325362BF5-E40-FQ1-A can operate with the PLL disabled by asserting DLL# LOW, but only for debug or low-frequency operation below 120 MHz. For rated 250 MHz performance, DLL# must be HIGH (tied to VDDQ). AC/DC characteristics are not guaranteed with DLL# LOW, and timing margins degrade significantly.
What is the purpose of the CQ and CQ# pins on the UPD44325362BF5-E40-FQ1-A?
The CQ and CQ# pins on the UPD44325362BF5-E40-FQ1-A are echo clocks synchronized to the Q data outputs. Their rising edges tightly match data validity timing, providing a hardware-generated data-ready signal that eliminates reliance on fixed delay lines or complex timing calculations in the receiving controller.
UPD44325362BF5-E40-FQ1-A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-FBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 36Mbit
- Memory Organization:
- 1M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- 4ns
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
UPD44325362BF5-E40-FQ1-A FAQ
1.How can I place an order for UPD44325362BF5-E40-FQ1-A through Aetrix?
Please submit a Request for Quotation (RFQ) for UPD44325362BF5-E40-FQ1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPD44325362BF5-E40-FQ1-A reliable?
The price and inventory of UPD44325362BF5-E40-FQ1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD44325362BF5-E40-FQ1-A is usually 5 days.
3.What payment methods are accepted for UPD44325362BF5-E40-FQ1-A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPD44325362BF5-E40-FQ1-A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPD44325362BF5-E40-FQ1-A?
UPD44325362BF5-E40-FQ1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPD44325362BF5-E40-FQ1-A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPD44325362BF5-E40-FQ1-A?
For technical support, including UPD44325362BF5-E40-FQ1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD44325362BF5-E40-FQ1-A requirements.
6.How does Aetrix verify that UPD44325362BF5-E40-FQ1-A is sourced from the original manufacturer or authorized distributors?
All UPD44325362BF5-E40-FQ1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD44325362BF5-E40-FQ1-A meets industry standards.
7.What is the process for return or replacement of UPD44325362BF5-E40-FQ1-A?
All UPD44325362BF5-E40-FQ1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPD44325362BF5-E40-FQ1-A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPD44325362BF5-E40-FQ1-A part is unused and in its original packaging.
Return procedure for UPD44325362BF5-E40-FQ1-A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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