Renesas UPD44325362BF5-E40X-FQ1-A

Overview

UPD44325362BF5-E40X-FQ1-A from Renesas Electronics is a 1,048,576-word × 36-bit synchronous Quad Data Rate II (QDR-II) SRAM with 4.0 ns clock cycle time (250 MHz), 1.8 V core supply, HSTL interface, and 165-pin plastic BGA (15 × 17) package. It supports concurrent read/write operations, two-word burst, and PLL-based output timing control for high-speed networking buffers and packet memory applications.

For engineers reviewing the UPD44325362BF5-E40X-FQ1-A datasheet, UPD44325362BF5-E40X-FQ1-A pinout, UPD44325362BF5-E40X-FQ1-A application, or UPD44325362BF5-E40X-FQ1-A equivalent, key selection criteria include its 36-bit wide I/O, dual-clock DDR timing (K/K# input, C/C# output), user-programmable output impedance (35–70 Ω), clock-stop capability (20 μs recovery), and JTAG 1149.1 test port compliance.

Technical Context

This QDR-II SRAM implements separate independent read and write data ports with full bus utilization in both DDR READ and WRITE modes. Its internal architecture includes a burst counter, synchronous address/data registers latched on K and K# rising edges, and echo clocks (CQ/CQ#) tightly matched to output data for precise timing alignment.

The device integrates a PLL for wide output data valid window and frequency scalability, supports HSTL Class I signaling, and features internally self-timed write control with programmable byte-write enable (BW0#–BW3#) for granular 9-bit sub-word writes. Clock-stop mode retains state and resumes normal operation within 20 μs after clock resumption.

Key Specifications

Pinout & Package

Package: 165-pin plastic BGA (15 × 17 mm), RoHS-compliant, lead-free finish (FQ1-A suffix). Pinout conforms to μPD44325362B specification with 36-bit data I/O (D0–D35, Q0–Q35), four byte-write controls (BW0#–BW3#), dual input clocks (K, K#), dual output clocks (C, C#), echo clocks (CQ, CQ#), JTAG TAP (TMS, TDI, TCK, TDO), and dedicated power/ground (VDD, VDDQ, VSS) and reference (VREF, ZQ) pins.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR-II SRAM applications.

Compared with UPD44325362BF5-E40X-FQ1-A, CY7C2663KV18-400BAXI delivers 60% higher bandwidth but demands stricter board-level signal integrity; AS7C3361024A-400BIN offers pin-compatible QDR-II+ migration path with minor power and timing recalibration.

Availability

UPD44325362BF5-E40X-FQ1-A is available at Aetrix Electronics and suitable for high-speed network switching, telecom line card buffering, and ASIC/FPGA co-processing applications requiring stable component supply, long-term lifecycle support, and guaranteed RoHS-compliant sourcing.

Supply support for UPD44325362BF5-E40X-FQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The μPD44325xxx series belongs to Renesas' QDR-II SRAM product line, engineered specifically for high-bandwidth, low-latency packet memory in networking and communications equipment operating at OC-192/STM-64 line rates and beyond.

FAQ

What is the maximum supported clock frequency for UPD44325362BF5-E40X-FQ1-A?

The UPD44325362BF5-E40X-FQ1-A is rated for a 4.0 ns clock cycle time, corresponding to a maximum clock frequency of 250 MHz under commercial temperature conditions (0 to 70°C). This rating is confirmed in the Ordering Information table on page 2 of R10DS0038EJ0200 Rev.2.00, where the "-E40" suffix explicitly denotes the 4.0 ns speed grade. Operation above this frequency violates AC timing specifications and risks data corruption.

Does UPD44325362BF5-E40X-FQ1-A support true concurrent read and write operations?

Yes, UPD44325362BF5-E40X-FQ1-A supports true concurrent read and write operations using separate independent data ports. As stated in the Features section (page 1), it provides "Separate independent read and write data ports with concurrent transactions." The block diagram (page 9) shows distinct read and write data paths feeding into the memory array, and the Truth Table (page 11) confirms that READ and WRITE cycles can be initiated independently on successive clock edges without conflict.

How is output impedance calibrated on UPD44325362BF5-E40X-FQ1-A?

Output impedance on UPD44325362BF5-E40X-FQ1-A is calibrated via the ZQ pin, which connects to an external resistor (R_Q) to ground. Per the Pin Description (page 8), the device sets Q, CQ, and CQ# output impedance to 0.2 × R_Q, where R_Q must be 175–350 Ω to achieve the specified 35–70 Ω range. Calibration occurs automatically every 20 μs after power-up to compensate for voltage and temperature drift, and the ZQ pin must never be left unconnected or tied directly to GND.

What is the function of the DLL# pin on UPD44325362BF5-E40X-FQ1-A?

The DLL# pin on UPD44325362BF5-E40X-FQ1-A is an active-low PLL disable input. When DLL# = LOW, the internal PLL is bypassed, allowing debug operation at frequencies below the minimum PLL lock threshold (120 MHz). For normal 250 MHz operation, DLL# must be held HIGH-typically tied to VDDQ through a ≤10 kΩ resistor-as specified in the Pin Description (page 8) and Power-On Sequence (page 10).

Is UPD44325362BF5-E40X-FQ1-A compatible with JTAG boundary-scan testing?

Yes, UPD44325362BF5-E40X-FQ1-A includes a fully compliant IEEE 1149.1 JTAG test access port with TMS, TDI, TCK, and TDO pins operating at 1.8 V I/O level. The Pin Description (page 8) confirms these signals are present and functional. If JTAG is unused, TCK must be tied to VSS, while TMS and TDI may be left unconnected-ensuring robust testability without requiring additional level-shifting circuitry.