Renesas UPD44325362BF5-E40Y-FQ1-A

Overview

UPD44325362BF5-E40Y-FQ1-A from Renesas Electronics is a 1,048,576-word × 36-bit synchronous Quad Data Rate II (QDR II) SRAM with 2-word burst operation, 1.8 V core supply, HSTL interface, and 165-pin plastic BGA (15 × 17 mm) packaging. It delivers 250 MHz clock frequency (4.0 ns cycle time), supports −40°C to +85°C industrial temperature range, and enables concurrent read/write transactions in high-bandwidth networking and packet buffering applications.

For engineers reviewing the UPD44325362BF5-E40Y-FQ1-A datasheet, UPD44325362BF5-E40Y-FQ1-A pinout, UPD44325362BF5-E40Y-FQ1-A application, or UPD44325362BF5-E40Y-FQ1-A equivalent, key selection considerations include its 36-bit wide DDR interface, dual-clock timing architecture (K/K# input, C/C# output), user-programmable output impedance (35–70 Ω), JTAG 1149.1 test port, and PLL-enabled wide data valid window for system-level timing margin.

Technical Context

This QDR II SRAM implements separate independent read and write data ports with full bus utilization for simultaneous DDR READ and WRITE operations. Its internal architecture includes a burst counter, synchronous address/data registers latched on K and K# rising edges, and echo clocks (CQ/CQ#) tightly matched to output data for precise flight-time compensation.

The device uses HSTL Class I I/O with VREF = VDDQ/2 reference, supports clock-stop mode with 20 μs recovery, and integrates a PLL for scalable frequency operation down to 120 MHz. Output impedance is tuned via ZQ pin using an external resistor to ground, enabling system-level signal integrity optimization without layout changes.

Key Specifications

Pinout & Package

UPD44325362BF5-E40Y-FQ1-A is housed in a 165-pin plastic BGA (15 × 17 mm, 0.8 mm pitch) with standard top-view ball grid layout. The package supports thermal dissipation with θ_ja = 21.2°C/W (4-layer board, still air) and includes dedicated power/ground planes for VDD, VDDQ, and VSS.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C2663KV18-400BZI and AS7C3361024A-20BIN, UPD44325362BF5-E40Y-FQ1-A provides optimal balance of 250 MHz performance, industrial temperature reliability, and 35–70 Ω programmable drive strength-making it ideal for mid-range telecom and test equipment where timing margin and thermal robustness are prioritized over maximum speed.

Availability

UPD44325362BF5-E40Y-FQ1-A is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, and telecom baseband processing requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for UPD44325362BF5-E40Y-FQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The UPD44325362BF5-E40Y-FQ1-A belongs to Renesas' QDR II SRAM product line, engineered specifically for high-bandwidth, low-latency buffer applications in networking equipment, base stations, and test instrumentation where deterministic DDR timing and industrial-grade reliability are critical.

FAQ

What is the operating temperature range for UPD44325362BF5-E40Y-FQ1-A?

UPD44325362BF5-E40Y-FQ1-A is rated for industrial operation from −40°C to +85°C ambient temperature. This range is confirmed in the Ordering Information table (Page 3, "E**Y series") and validated in DC Characteristics 2 (Page 16), where supply current and voltage thresholds are specified across this full span. The device maintains full functionality-including PLL lock, burst timing, and impedance calibration-within these limits.

Does UPD44325362BF5-E40Y-FQ1-A support true dual-port operation?

Yes, UPD44325362BF5-E40Y-FQ1-A supports true concurrent read and write operations via physically separate data paths: Q[0:35] outputs for reads and D[0:35] inputs for writes. As stated in the Features section (Page 1), it provides "separate independent read and write data ports with concurrent transactions," and the Block Diagram (Page 9) shows distinct read and write register banks feeding the same memory array without arbitration logic.

How is output impedance calibrated on UPD44325362BF5-E40Y-FQ1-A?

Output impedance is calibrated using the ZQ pin: connecting an external resistor (175–350 Ω) from ZQ to ground sets Q, CQ, and CQ# driver impedance to 35–70 Ω (0.2 × R_Q). This calibration runs automatically every 20 μs after power-up (Page 8). Direct connection of ZQ to VDDQ minimizes impedance; ZQ must never be left floating or tied to VSS.

What clocking scheme does UPD44325362BF5-E40Y-FQ1-A use for data output timing?

UPD44325362BF5-E40Y-FQ1-A uses a selectable dual-clock scheme: C and C# rising edges define output timing by default (C# for first word, C for second), but if C and C# are fixed HIGH, K and K# rising edges control output timing instead. This is explicitly defined in the Pin Description (Page 7) and Truth Table (Page 11), ensuring flexibility for system clock topology.

Is JTAG boundary-scan supported on UPD44325362BF5-E40Y-FQ1-A?

Yes, UPD44325362BF5-E40Y-FQ1-A includes full IEEE 1149.1 JTAG test access with TMS, TDI, TCK, and TDO pins operating at 1.8 V I/O level (Page 8). TCK must be tied to VSS if JTAG is unused; all other JTAG pins may be left unconnected. The feature enables production test, interconnect verification, and in-system debugging without additional probe points.