Renesas UPD44325362BF5-E50-FQ1-A

Overview

UPD44325362BF5-E50-FQ1-A from Renesas Electronics is a 1,048,576-word × 36-bit synchronous Quad Data Rate II (QDR II) SRAM with 2-word burst operation, 1.8 V core supply, HSTL interface, and 165-pin plastic BGA (15 × 17 mm) packaging. It delivers 200 MHz clock frequency (5.0 ns cycle time), supports concurrent read/write ports, and targets high-bandwidth networking buffers and packet memory in telecom infrastructure.

For engineers reviewing the UPD44325362BF5-E50-FQ1-A datasheet, UPD44325362BF5-E50-FQ1-A pinout, UPD44325362BF5-E50-FQ1-A application, or UPD44325362BF5-E50-FQ1-A equivalent, key selection considerations include its QDR II timing architecture, 36-bit wide data bus, DLL-enabled output clocking (C/C#), user-programmable output impedance (35–70 Ω), and JTAG 1149.1 test access support.

Technical Context

The UPD44325362BF5-E50-FQ1-A implements a dual-clock QDR II interface: K/K# control input registration and address/data latching on rising edges, while C/C# govern output timing for precise flight-time matching. Its internal PLL enables wide data-valid windows and supports future frequency scaling up to 300 MHz.

It features separate read and write data paths enabling true concurrent transactions, internally self-timed write control, clock-stop capability (20 μs recovery), and four independent byte-write enable inputs (BW0#–BW3#) for granular 9-bit sub-word writes across its 36-bit data width.

Key Specifications

Pinout & Package

UPD44325362BF5-E50-FQ1-A is housed in a 165-pin plastic BGA package (15 mm × 17 mm, 0.8 mm pitch), compatible with JEDEC MO-255 standard. The package supports automated reflow assembly and provides thermal performance of θ_ja = 21.2 °C/W (4-layer board, still air).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C2663KV18-500BAXI and AS7C336518A-50BIN, the UPD44325362BF5-E50-FQ1-A offers optimized power efficiency at 200 MHz (440 mA IDD), relaxed timing margins for robust signal integrity, and factory-trimmed ZQ calibration-making it ideal for cost-sensitive, thermally constrained telecom edge equipment.

Availability

UPD44325362BF5-E50-FQ1-A is available at Aetrix Electronics and suitable for high-speed packet buffering, network processor interfacing, telecom baseband processing, and test equipment memory subsystems requiring stable component supply, long-term lifecycle assurance, and lead-free compliance.

Supply support for UPD44325362BF5-E50-FQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The UPD44325362BF5-E50-FQ1-A belongs to Renesas' QDR II SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth memory applications in networking and communications infrastructure where concurrent access and precise timing are critical.

FAQ

What is the maximum operating frequency supported by the UPD44325362BF5-E50-FQ1-A?

The UPD44325362BF5-E50-FQ1-A is rated for 200 MHz operation (5.0 ns clock cycle time) under commercial temperature conditions (0 °C to +70 °C). While the QDR II family supports up to 300 MHz in faster speed grades (e.g., -E33), this specific variant is characterized and guaranteed only up to 200 MHz. Its PLL remains functional at this frequency to ensure stable C/C# and CQ/CQ# timing alignment.

Does the UPD44325362BF5-E50-FQ1-A support independent byte-write functionality?

Yes, the UPD44325362BF5-E50-FQ1-A supports granular 9-bit sub-word writes via four active-low byte-write enable signals: BW0#, BW1#, BW2#, and BW3#. Each controls one 9-bit segment of the 36-bit data bus (D0–D8, D9–D17, D18–D26, D27–D35), allowing partial writes without disturbing adjacent bytes-essential for descriptor updates and header modifications in packet processing.

How is output impedance calibrated on the UPD44325362BF5-E50-FQ1-A?

Output impedance for Q, CQ, and CQ# drivers on the UPD44325362BF5-E50-FQ1-A is calibrated using the ZQ pin. A precision resistor (RQ) is connected from ZQ to ground; the device sets output impedance to 0.2 × RQ. Typical RQ values yield 35–70 Ω ranges. Calibration occurs automatically every 20 μs after power-up and tracks voltage/temperature drift-no software intervention required.

Can the UPD44325362BF5-E50-FQ1-A operate without its internal PLL?

Yes-the UPD44325362BF5-E50-FQ1-A can operate with the PLL disabled by asserting DLL# LOW. This mode allows functional validation at reduced clock frequencies (<200 MHz) without PLL lock constraints, though AC/DC specifications are not guaranteed. For production operation, DLL# must be pulled HIGH (e.g., via 10 kΩ resistor to VDDQ) to enable full timing compliance and jitter suppression.

What JTAG capabilities does the UPD44325362BF5-E50-FQ1-A provide?

The UPD44325362BF5-E50-FQ1-A integrates a full IEEE 1149.1 JTAG test access port (TMS, TCK, TDI, TDO) operating at 1.8 V I/O levels. It supports boundary-scan testing for interconnect verification and in-system debugging. Pins may be left unconnected if JTAG is unused, except TCK which must be tied to VSS to prevent floating input.