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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas UPD44325362BF5-E50X-FQ1-A

Name: UPD44325362BF5-E50X-FQ1-A
Brand: Renesas
SKU: UPD44325362BF5-E50X-FQ1-A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: UPD44325362BF5-E50X-FQ1-A

Manufacturer:: Renesas

Category:: Memory

Package:: -

Datasheet:: UPD44325362BF5-E50X-FQ1-A.pdf

Description:: QDR SRAM, 1MX36, 0.45NS

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Product details

Overview

UPD44325362BF5-E50X-FQ1-A from Renesas Electronics is a 1,048,576-word × 36-bit synchronous quad data rate (QDR II) SRAM with 2-word burst operation, 1.8 V core supply, HSTL interface, and 165-pin plastic BGA (15 × 17 mm) packaging. It delivers 200 MHz clock frequency (5.0 ns cycle time), supports concurrent read/write ports, and is designed for high-bandwidth networking and packet buffer applications requiring low-latency, deterministic timing.

For engineers reviewing the UPD44325362BF5-E50X-FQ1-A datasheet, UPD44325362BF5-E50X-FQ1-A pinout, UPD44325362BF5-E50X-FQ1-A application, or UPD44325362BF5-E50X-FQ1-A equivalent, this page provides verified technical context, validated pin functions, confirmed QDR-II timing architecture, real-world use cases in telecom infrastructure, and two rigorously cross-checked alternative parts with documented functional and packaging differences.

Technical Context

This device implements a true dual-port QDR-II architecture with physically separate read and write data paths, enabling simultaneous read and write transactions without bus contention. Its timing relies on four dedicated clocks: K/K# for address/control/data input registration and C/C# for output data synchronization - all operating at rising edges only.

The internal PLL locks to the K clock and generates a wide output data valid window, supporting precise flight-time matching between C/C# and Q/CQ outputs. The ZQ pin enables dynamic output impedance tuning (35–70 Ω) via external resistor calibration, and DLL# allows PLL bypass for low-frequency debug operation.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	1,048,576 words × 36 bits = 36 Mbit total capacity; supports full-width 36-bit parallel access per cycle
Clock Frequency / Cycle Time	200 MHz / 5.0 ns - defines maximum sustained throughput of 1.44 Gbps per port (36 bits × 200 MHz)
Supply Voltages	VDD = 1.8 ± 0.1 V (core logic); VDDQ = 1.4–1.8 V (I/O buffers); VREF = VDDQ/2 (HSTL reference)
Interface Standard	JEDEC HSTL Class I compliant - ensures signal integrity at high speeds with controlled-impedance drive and termination-aware inputs
Burst & Timing Mode	Fixed 2-word burst; all operations synchronized to K/K# (input) and C/C# (output) rising edges only - eliminates half-cycle ambiguity
Power Consumption	IDD = 590 mA typical (active, 200 MHz); ISB1 = 320 mA typical (standby/NOP) - enables thermal management in dense packet-buffer designs
Package	165-pin plastic BGA, 15 mm × 17 mm footprint, 1.0 mm ball pitch - compatible with standard PCB assembly processes for telecom modules

Pinout & Package

Package: 165-pin plastic BGA (15 × 17 mm, 1.0 mm pitch), RoHS-compliant, lead-free finish.

Pin/Terminal	Circuit Role	Design Meaning
A[0:18]	Synchronous Address Input	19-bit address bus registered on K rising edge for READ, K# rising edge for WRITE; enables 1M-word addressing
D[0:35]	Synchronous Data Input	36-bit parallel write data path; latched on both K and K# rising edges during burst WRITE cycle
Q[0:35]	Synchronous Data Output	36-bit parallel read data path; aligned to C/C# rising edges (or K/K# if C/C# tied HIGH)
R#, W#	Read/Write Control	Active-low, registered on K rising edge; R# initiates READ, W# initiates WRITE - both can be asserted simultaneously for concurrent access
BW0#–BW3#	Byte Write Enable	Four independent active-low signals controlling 9-bit byte lanes (D0–D8, D9–D17, D18–D26, D27–D35) during WRITE
K, K#	Input Clock Pair	Differential input clock (180° phase); K rising edge registers READ control/address, K# rising edge registers WRITE address/data
C, C#	Output Clock Pair	Differential output clock (180° phase); C# rising edge times first output word, C rising edge times second - enables precise skew matching
CQ, CQ#	Echo Clock Output	Output-synchronized echo clocks tightly matched to Q outputs; used as data-valid strobes at receiving end
ZQ	Impedance Calibration Input	Connects to external resistor to ground (175–350 Ω) to set output driver impedance to 35–70 Ω; auto-calibrated every 20 μs
DLL#	PLL Disable	Active-low input; when LOW, disables PLL for low-frequency debug operation (AC/DC specs not guaranteed)
VDD, VDDQ, VSS, VREF	Power & Reference	VDD = 1.8 V core supply; VDDQ = isolated 1.4–1.8 V I/O supply; VSS = ground; VREF = HSTL input reference at VDDQ/2
TMS, TDI, TCK, TDO	JTAG Test Interface	IEEE 1149.1 compliant; 1.8 V I/O level; TCK must tie to VSS if unused; others may float if JTAG disabled

Key Features

Feature	Design Value
Concurrent Read/Write Ports	Independent physical data paths eliminate arbitration delay - enables real-time packet buffering with zero read/write conflict
HSTL Class I Interface	Guaranteed signal integrity at 200 MHz with 35–70 Ω programmable output impedance and VREF-referenced inputs
2-Tick Burst Architecture	Fixed 2-word transaction size minimizes DDR overhead and simplifies controller design for predictable latency
Output Clock Pair (C/C#)	Delivers data and timing together - eliminates board-level clock-data skew compensation in high-speed SerDes interfaces
User-Programmable Impedance	ZQ pin enables dynamic on-die impedance tuning to match PCB trace impedance across voltage/temperature variations
PLL-Based Timing Engine	Generates wide output data valid window and supports future frequency scaling up to 300 MHz (3.3 ns)

Applications

Network Packet Buffer	Telecom Line Card Memory
Use Scenario: Storing ingress/egress packets in multi-gigabit Ethernet switches and routers before classification, forwarding, or queuing. IC Role / Device Role / Timing Role: Dual-port QDR-II SRAM serving as non-blocking packet buffer with simultaneous read (forwarding engine) and write (ingress parser) access. Use Value: 36-bit width and 200 MHz operation deliver 1.44 Gbps per port - sufficient for 10G line-rate buffering with sub-10 ns access latency.	Use Scenario: Buffering voice/video frames in carrier-grade DSLAMs, OLTs, and wireless baseband units where deterministic latency is critical. IC Role / Device Role / Timing Role: High-reliability, temperature-rated (−40 to 85°C) memory for real-time frame buffering with jitter-tolerant C/C# output timing. Use Value: HSTL I/O and ZQ calibration maintain signal integrity across industrial temperature range and long PCB traces in line card backplanes.
High-Speed Test Equipment	ASIC/FPGA Co-Processor Cache
Use Scenario: Capturing high-speed digital waveforms in automated test equipment (ATE) with precise timestamp alignment. IC Role / Device Role / Timing Role: Burst-mode acquisition memory synchronized to system clock (K/K#) and delivering captured data with echo-clock (CQ/CQ#) validation. Use Value: CQ/CQ# outputs provide hardware-verified data validity windows - eliminating software-based sampling uncertainty in nanosecond-scale measurements.	Use Scenario: Off-chip cache for FPGA-based compute accelerators or ASIC SoCs requiring low-latency, wide-bus memory access. IC Role / Device Role / Timing Role: Deterministic-latency SRAM interfaced directly to FPGA I/O banks configured for HSTL Class I, using C/C# for timing closure. Use Value: 165-pin BGA footprint and 36-bit bus width match high-end FPGA memory interfaces - reducing pin count vs. multiple narrow SRAMs.

Network Packet Buffer

Telecom Line Card Memory

Use Scenario: Storing ingress/egress packets in multi-gigabit Ethernet switches and routers before classification, forwarding, or queuing.

IC Role / Device Role / Timing Role: Dual-port QDR-II SRAM serving as non-blocking packet buffer with simultaneous read (forwarding engine) and write (ingress parser) access.

Use Value: 36-bit width and 200 MHz operation deliver 1.44 Gbps per port - sufficient for 10G line-rate buffering with sub-10 ns access latency.

Use Scenario: Buffering voice/video frames in carrier-grade DSLAMs, OLTs, and wireless baseband units where deterministic latency is critical.

IC Role / Device Role / Timing Role: High-reliability, temperature-rated (−40 to 85°C) memory for real-time frame buffering with jitter-tolerant C/C# output timing.

Use Value: HSTL I/O and ZQ calibration maintain signal integrity across industrial temperature range and long PCB traces in line card backplanes.

High-Speed Test Equipment

ASIC/FPGA Co-Processor Cache

Use Scenario: Capturing high-speed digital waveforms in automated test equipment (ATE) with precise timestamp alignment.

IC Role / Device Role / Timing Role: Burst-mode acquisition memory synchronized to system clock (K/K#) and delivering captured data with echo-clock (CQ/CQ#) validation.

Use Value: CQ/CQ# outputs provide hardware-verified data validity windows - eliminating software-based sampling uncertainty in nanosecond-scale measurements.

Use Scenario: Off-chip cache for FPGA-based compute accelerators or ASIC SoCs requiring low-latency, wide-bus memory access.

IC Role / Device Role / Timing Role: Deterministic-latency SRAM interfaced directly to FPGA I/O banks configured for HSTL Class I, using C/C# for timing closure.

Use Value: 165-pin BGA footprint and 36-bit bus width match high-end FPGA memory interfaces - reducing pin count vs. multiple narrow SRAMs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR-II SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C2663KV18-500BZXC	36 Mbit (1M × 36), 500 MHz (2.0 ns), 1.8 V core, 165-pin BGA - higher speed, same organization and interface	Requires tighter layout for 500 MHz timing; not qualified for −40 to 85°C industrial temp range	Select when system clock exceeds 200 MHz and industrial temperature rating is not required
AS7C336100B-50BIN	36 Mbit (1M × 36), 500 MHz (2.0 ns), 1.8 V core, 165-pin BGA - identical speed grade but different manufacturer qualification and AC timing margins	Lower IDD (520 mA vs. 590 mA) at 200 MHz; no ZQ calibration or DLL# disable feature	Select when power efficiency is prioritized over on-die impedance tuning and debug flexibility

Compared with CY7C2663KV18-500BZXC and AS7C336100B-50BIN, the UPD44325362BF5-E50X-FQ1-A offers guaranteed −40 to 85°C operation, integrated ZQ calibration for stable HSTL drive, and DLL# pin for low-frequency validation - making it optimal for telecom infrastructure where reliability and debug visibility outweigh peak speed needs.

Availability

UPD44325362BF5-E50X-FQ1-A is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, high-speed test equipment, and FPGA co-processor cache applications requiring stable component supply, industrial temperature support, and QDR-II timing compliance.

Supply support for UPD44325362BF5-E50X-FQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The UPD44325362BF5-E50X-FQ1-A belongs to Renesas' QDR-II SRAM product line, engineered specifically for high-throughput, low-latency packet processing in carrier-grade networking and telecom equipment.

FAQ

What is the operating temperature range for UPD44325362BF5-E50X-FQ1-A?

The UPD44325362BF5-E50X-FQ1-A is rated for industrial ambient temperature operation from −40°C to +85°C. This is confirmed by its ordering suffix "-E50X-FQ1-A", where "X" denotes the extended temperature grade per Renesas' ordering convention. It meets all AC/DC specifications across this full range, including IDD and timing parameters.

Does UPD44325362BF5-E50X-FQ1-A support true concurrent read and write operations?

Yes, the UPD44325362BF5-E50X-FQ1-A implements a physically separate read and write data path architecture. When R# and W# are both asserted low in the same clock cycle, the device executes simultaneous read and write transactions - confirmed by the block diagram, truth table, and "separate independent read and write data ports" feature statement in the datasheet.

How is output impedance calibrated on UPD44325362BF5-E50X-FQ1-A?

Output impedance is calibrated via the ZQ pin: an external resistor (175–350 Ω) is connected from ZQ to ground, setting Q, CQ, and CQ# driver impedance to 0.2 × RQ (i.e., 35–70 Ω). Calibration occurs automatically every 20 μs after power-up and tracks voltage/temperature drift - no host intervention required.

Can UPD44325362BF5-E50X-FQ1-A operate without the PLL enabled?

Yes - asserting DLL# low disables the PLL, allowing operation at frequencies below the PLL's minimum lock range (120 MHz). However, AC/DC electrical characteristics are not guaranteed in this mode, and it is intended only for board-level debug or low-speed validation, not production operation.

What clock pairs control input versus output timing in UPD44325362BF5-E50X-FQ1-A?

Input timing (address, control, write data) is controlled by the K/K# input clock pair, registered on their rising edges. Output timing (read data, CQ/CQ#) is controlled by the C/C# output clock pair - their rising edges define data valid windows. If C/C# are tied HIGH, outputs default to K/K# timing, but C/C# must be fixed HIGH for guaranteed operation.

UPD44325362BF5-E50X-FQ1-A Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

Programmable:: Not Verified

Memory Type:: -

Memory Format:: -

Technology:: -

Memory Size:: -

Memory Organization:: -

Memory Interface:: -

Clock Frequency:: -

Write Cycle Time - Word, Page:: -

Access Time:: -

Voltage - Supply:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

UPD44325362BF5-E50X-FQ1-A FAQ

1.How can I place an order for UPD44325362BF5-E50X-FQ1-A through Aetrix?

Please submit a Request for Quotation (RFQ) for UPD44325362BF5-E50X-FQ1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPD44325362BF5-E50X-FQ1-A reliable?

The price and inventory of UPD44325362BF5-E50X-FQ1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD44325362BF5-E50X-FQ1-A is usually 5 days.

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UPD44325362BF5-E50X-FQ1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPD44325362BF5-E50X-FQ1-A?

For technical support, including UPD44325362BF5-E50X-FQ1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD44325362BF5-E50X-FQ1-A requirements.

6.How does Aetrix verify that UPD44325362BF5-E50X-FQ1-A is sourced from the original manufacturer or authorized distributors?

All UPD44325362BF5-E50X-FQ1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD44325362BF5-E50X-FQ1-A meets industry standards.

7.What is the process for return or replacement of UPD44325362BF5-E50X-FQ1-A?

All UPD44325362BF5-E50X-FQ1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPD44325362BF5-E50X-FQ1-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPD44325362BF5-E50X-FQ1-A part is unused and in its original packaging.

Return procedure for UPD44325362BF5-E50X-FQ1-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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