Renesas UPD44325364BF5-E40-FQ1

Overview

UPD44325364BF5-E40-FQ1 from Renesas Electronics is a 1,048,576-word × 36-bit synchronous Quad Data Rate II (QDR II) SRAM with 4-word burst operation, HSTL interface, and 1.8 V core supply. It delivers 250 MHz clock frequency (4.0 ns cycle time), supports concurrent read/write ports, and operates across 0 to 70°C ambient temperature in high-speed networking buffer applications.

For engineers reviewing the UPD44325364BF5-E40-FQ1 datasheet, UPD44325364BF5-E40-FQ1 pinout, UPD44325364BF5-E40-FQ1 application, or UPD44325364BF5-E40-FQ1 equivalent, key selection criteria include its 36-bit wide QDR II architecture, dual-clock timing (K/K# for input, C/C# for output), user-programmable output impedance (35–70 Ω), PLL-based data valid window extension, and 165-pin plastic BGA (15 × 17 mm) package compatibility with high-density memory subsystems.

Technical Context

This QDR II SRAM implements separate independent read and write data ports with fully concurrent transactions, enabling simultaneous access without bus contention. Its internal burst counter and synchronous peripheral circuitry latch all inputs on the rising edge of K and K#, supporting precise DDR timing at clock edges only.

The device integrates a PLL for wide output data valid window and future frequency scaling, plus clock-stop capability with full operational recovery within 20 μs. Output clocks C and C# deliver synchronized data with matched flight time and skew-clock and data arrive together at the receiving device-while echo clocks CQ/CQ# provide tightly aligned data-valid indication.

Key Specifications

Pinout & Package

UPD44325364BF5-E40-FQ1 is housed in a 165-pin plastic BGA (15 × 17 mm, 1.0 mm pitch) with standard ball grid layout optimized for high-speed signal routing and thermal management. Pin functions are defined per the official Renesas datasheet R10DS0039EJ0200 Rev.2.00.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C2663KV18-250BAXI and AS7C336536B-250BIN, UPD44325364BF5-E40-FQ1 offers proven reliability in commercial networking gear and simpler initialization, while the Cypress part adds diagnostic features and the Alliance part provides tighter AC specs - choice depends on temperature, diagnostics, and legacy compatibility requirements.

Availability

UPD44325364BF5-E40-FQ1 is available at Aetrix Electronics and suitable for high-speed network buffering, packet switching ASIC interfaces, backplane interconnect memory, and test equipment pattern memory requiring stable component supply and long-term production continuity.

Supply support for UPD44325364BF5-E40-FQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

UPD44325364BF5-E40-FQ1 belongs to Renesas' QDR II SRAM product line, engineered specifically for high-bandwidth, low-latency memory subsystems in networking infrastructure and high-performance computing where deterministic burst access and concurrent port operation are critical.

FAQ

What is the operating voltage range for UPD44325364BF5-E40-FQ1?

UPD44325364BF5-E40-FQ1 requires VDD = 1.7–1.9 V (nominal 1.8 V ±0.1 V) and VDDQ = 1.4–1.8 V. VDDQ must not exceed VDD during operation. The device also uses VREF = VDDQ/2 (0.68–0.95 V) as the HSTL input reference voltage. These rails are strictly decoupled per the Renesas layout guidelines to maintain signal integrity at 250 MHz.

Does UPD44325364BF5-E40-FQ1 support true concurrent read and write operations?

Yes, UPD44325364BF5-E40-FQ1 implements physically separate read and write data paths with independent control logic. A read cycle initiated on one rising edge of K can complete concurrently with a write cycle initiated on the same edge - no arbitration delay or bus turnaround penalty. This is confirmed in the Bus Cycle State Diagram (Page 16) and Truth Table (Page 13) of the datasheet.

How is output impedance calibrated on UPD44325364BF5-E40-FQ1?

Output impedance is calibrated using the ZQ pin: a resistor (RQ) is connected from ZQ to ground, setting Q, CQ, and CQ# output impedance to 0.2 × RQ (35–70 Ω range). Calibration occurs automatically every 20 μs after power-up. Direct connection of ZQ to VDDQ minimizes impedance; ZQ must never be left floating or tied to VSS.

What is the function of C and C# pins on UPD44325364BF5-E40-FQ1?

C and C# are output clocks that control the timing of Q0–Q35 data delivery. Their rising edges define data-valid windows: C# rising edge clocks first and third output words, C rising edge clocks second and fourth. When C and C# are tied HIGH, data is instead synchronized to K and K# - but C/C# mode is required for guaranteed timing compliance at 250 MHz.

Can UPD44325364BF5-E40-FQ1 operate without the PLL enabled?

Yes - pulling DLL# LOW disables the PLL, allowing operation at reduced frequencies (<120 MHz) for board-level debug. However, AC/DC characteristics are not guaranteed in this mode. For full-spec 250 MHz operation, DLL# must be HIGH (tied to VDDQ via ≤10 kΩ resistor) to engage the PLL for wide data valid window and jitter tolerance.