Renesas UPD44644182AF5-E40X-FQ1

Overview

UPD44644182AF5-E40X-FQ1 from Renesas Electronics is a 4,194,304-word × 18-bit synchronous double data rate (DDR II) SRAM with HSTL interface, 4.0 ns clock cycle time (250 MHz), 1.8 V core supply, and 165-pin plastic BGA (15 × 17 mm) packaging. It supports pipelined DDR operation, two-tick burst, DLL/PLL timing control, and user-programmable output impedance (35–70 Ω), targeting high-speed memory buffering in networking and test equipment.

For engineers reviewing the UPD44644182AF5-E40X-FQ1 datasheet, UPD44644182AF5-E40X-FQ1 pinout, UPD44644182AF5-E40X-FQ1 application, or UPD44644182AF5-E40X-FQ1 equivalent, key selection considerations include its 4M × 18 organization, HSTL I/O compatibility, 250 MHz DDR timing, DLL-enabled output data valid window, and JTAG 1149.1 test access for system-level validation.

Technical Context

This device implements a synchronous, burst-2 DDR architecture with dual input clocks (K/K#) registering address/control on K's rising edge and data on both K and K# edges. Its internal DLL/PLL circuit locks to K to widen the output data valid window and enable stable scaling across 200–300 MHz frequencies.

The UPD44644182AF5-E40X-FQ1 uses separate VDD (1.8 V) and VDDQ (1.4–1.8 V) supplies, supports clock-stop mode with 20 μs recovery, and features echo clocks (CQ/CQ#) tightly matched to DQ outputs for precise data capture. Byte write control (BW0#/BW1#) enables selective 9-bit sub-word writes within the 18-bit data bus.

Key Specifications

Pinout & Package

UPD44644182AF5-E40X-FQ1 is housed in a 165-pin plastic BGA package (15 mm × 17 mm, 0.8 mm pitch), with ball grid arranged in 11 columns (A–R) × 15 rows (1–11). The package supports lead-free reflow and meets industrial temperature grade (0–70°C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR II SRAM applications.

Compared with CY7C2665KV18 and IS42S16400F, the UPD44644182AF5-E40X-FQ1 uniquely balances 250 MHz DDR performance, 1.8 V power efficiency, HSTL signal integrity, and programmable impedance - making it optimal for next-generation communications and test instrumentation where thermal budget and layout simplicity are constrained.

Availability

UPD44644182AF5-E40X-FQ1 is available at Aetrix Electronics and suitable for network packet buffering, high-speed test equipment memory, communications baseband processing, and industrial motion controller FIFO applications requiring stable component supply and long-term industrial lifecycle support.

Supply support for UPD44644182AF5-E40X-FQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The UPD44644182AF5-E40X-FQ1 belongs to Renesas' DDR II SRAM product line, designed specifically for high-bandwidth, low-latency buffering in synchronous digital systems where precise timing, signal integrity, and power efficiency are critical.

FAQ

What is the maximum operating frequency of the UPD44644182AF5-E40X-FQ1?

The UPD44644182AF5-E40X-FQ1 is rated for a 4.0 ns clock cycle time, supporting reliable 250 MHz DDR operation under industrial conditions (0–70°C). Its DLL/PLL circuit ensures stable timing alignment across this frequency range, and the device also supports 200 MHz (5.0 ns) and 300 MHz (3.3 ns) variants within the same family.

Does the UPD44644182AF5-E40X-FQ1 support byte-level write masking?

Yes, the UPD44644182AF5-E40X-FQ1 supports granular write control via two active-low byte write signals: BW0# for DQ0–DQ8 and BW1# for DQ9–DQ17. This enables independent 9-bit sub-word writes during a single 2-word burst, reducing unnecessary data overwrites and improving memory utilization efficiency.

How is output impedance calibrated on the UPD44644182AF5-E40X-FQ1?

Output impedance calibration on the UPD44644182AF5-E40X-FQ1 is performed using the ZQ pin, which connects to an external precision resistor (typically 240 Ω) to VSS. At power-up and every 20 μs thereafter, the device measures this reference and adjusts DQ, CQ, and CQ# driver strength to achieve 0.2 × RQ - yielding 35–70 Ω programmable output impedance.

Can the UPD44644182AF5-E40X-FQ1 operate without the DLL/PLL enabled?

Yes - asserting DLL# LOW disables the DLL/PLL, allowing the UPD44644182AF5-E40X-FQ1 to operate at reduced frequencies for debug or initialization. However, AC/DC characteristics are not guaranteed in this mode, and normal 250 MHz operation requires DLL# tied HIGH (e.g., to VDDQ via ≤10 kΩ resistor).

What package type and dimensions does the UPD44644182AF5-E40X-FQ1 use?

The UPD44644182AF5-E40X-FQ1 uses a 165-pin plastic BGA package measuring 15 mm × 17 mm with 0.8 mm ball pitch. It conforms to RoHS standards, supports lead-free reflow, and is optimized for thermal performance (θja = 12.0 °C/W at 1 m/s airflow on 4-layer PCB).