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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas UPD44644362AF5-E40-FQ1

Name: UPD44644362AF5-E40-FQ1
Brand: Renesas
SKU: UPD44644362AF5-E40-FQ1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: UPD44644362AF5-E40-FQ1

Manufacturer:: Renesas

Category:: Memory

Package:: -

Datasheet:: UPD44644362AF5-E40-FQ1.pdf

Description:: 72-MBIT DDR II SRAM

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Product details

Overview

UPD44644362AF5-E40-FQ1 from NEC Electronics is a 2,097,152-word × 36-bit synchronous double data rate (DDR) SRAM with HSTL interface, 1.8 V core supply, and pipelined DDR operation. It delivers 250 MHz clock frequency (4.0 ns cycle time), supports two-word burst transfers, and integrates DLL circuitry for output timing control-used in high-bandwidth memory buffering for network packet processors and FPGA-based compute accelerators.

For engineers reviewing the UPD44644362AF5-E40-FQ1 datasheet, UPD44644362AF5-E40-FQ1 pinout, UPD44644362AF5-E40-FQ1 application, or UPD44644362AF5-E40-FQ1 equivalent, key selection criteria include its 36-bit wide I/O bus, 165-pin plastic BGA (15 × 17 mm) package, HSTL Class I compliance, DLL-enabled clock-to-data alignment, and support for byte-write masking via BW0#–BW3# signals.

Technical Context

This device implements a fully synchronous DDR architecture with dual input clocks (K/K#) latching all control and address inputs on rising edges, and dual output clocks (C/C#) delivering data with matched flight time. Its internal burst counter advances A0 to generate linear two-word bursts, enabling efficient sequential access without external address incrementing.

The memory core uses full-CMOS six-transistor cells and integrates a DLL for wide output data valid windows, user-programmable output impedance via ZQ calibration, and JTAG boundary scan (IEEE 1149.1) for testability. Clock-stop capability allows power-down with recovery in ≤1,024 cycles upon resumption.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	2,097,152 words × 36 bits = 72 Mbit total capacity; enables single-cycle access to 36-bit parallel data paths in telecom and packet-switching systems.
Clock Frequency / Cycle Time	250 MHz / 4.0 ns; defines maximum sustained transaction rate for burst-2 read/write operations under 1.8 V ±0.1 V supply.
Interface Standard	HSTL Class I; ensures signal integrity at high speeds with controlled slew, 1.5 V VDDQ-compatible termination, and VREF-referenced inputs.
Supply Voltages	VDD = 1.7–1.9 V (core logic); VDDQ = 1.4–1.8 V (I/O buffers); separation prevents noise coupling between logic and data paths.
Burst Mode	Fixed 2-word linear burst; reduces address bus overhead and simplifies controller design for streaming applications like video frame buffering.
Write Granularity	Four independent byte-write enables (BW0#–BW3#); allows selective 8-bit updates within 36-bit word without read-modify-write cycles.
DLL Support	DLL# pin disables DLL for low-frequency debug; when enabled, DLL locks in ≤1,024 cycles to align C/C# outputs with data for precise timing closure.

Pinout & Package

UPD44644362AF5-E40-FQ1 is housed in a 165-pin plastic BGA package with 15 × 17 mm footprint and 0.8 mm ball pitch. The package supports standard reflow profiles and provides dedicated power/ground distribution for HSTL signaling integrity.

Pin/Terminal	Circuit Role	Design Meaning
A0–A	Synchronous Address Inputs	Registered on K/K# rising edges; A0 selects starting address within 2-word burst; unused when LD# = HIGH (NOP).
DQ0–DQ35	Synchronous Data I/Os	36-bit bidirectional bus; data registered on K/K# rising edges (write) or delivered synchronized to C/C# rising edges (read).
BW0#–BW3#	Byte Write Enables	Active-low signals controlling write enable per 8-bit byte; four signals support full 36-bit granularity (DQ0–7, 8–15, 16–23, 24–35).
K, K#	Input Clock Pair	Differential clock inputs registering all control/address/data on rising edges; 180° phase relationship required for timing margin.
C, C#	Output Clock Pair	User-controlled timing reference for output data; C# rising edge clocks first data, C rising edge clocks second data in burst.
CQ, CQ#	Echo Clock Outputs	Tightly matched to DQ valid/hold windows; used as data-strobe replacement in point-to-point links without separate strobes.
ZQ	Impedance Calibration Input	Connects to external 240 Ω resistor to ground; sets DQ/CQ output impedance to 0.2 × RQ ≈ 48 Ω for controlled-impedance PCB routing.
LD#	Synchronous Load	Active-low signal initiating bus cycle; latches address and R/W# state on next K rising edge to define burst transaction.
R, W#	Read/Write Direction	When LD# = LOW, HIGH = read, LOW = write; must meet setup/hold relative to K rising edge.
VDD, VDDQ, VSS	Power/Ground	VDD (1.8 V core), VDDQ (1.5 V I/O), and multiple VSS balls provide low-inductance return paths for DDR switching noise suppression.
TMS, TDI, TCK, TDO	JTAG Boundary Scan	IEEE 1149.1 compliant test interface; operates at 1.8 V I/O level; TCK must tie to VSS if unused.
VREF	HSTL Reference	Nominally VDDQ/2 (0.7–0.95 V); supplies bias for HSTL input receivers; requires stable low-noise decoupling.
DLL#	DLL Disable	Active-low pin disabling DLL for sub-TKHKH clock frequencies during debug; AC/DC specs not guaranteed in this mode.

Key Features

Feature	Design Value
Pipelined DDR Operation	Enables concurrent address registration and data transfer across successive clock cycles, increasing effective bandwidth without raising clock frequency.
Two-Tick Burst Architecture	Reduces command overhead by fetching two words per LD# assertion, ideal for burst-oriented protocols like PCI Express memory-mapped I/O.
User-Programmable Output Impedance	ZQ calibration allows dynamic matching to PCB trace impedance, minimizing reflections and improving signal integrity on long memory buses.
Integrated DLL Circuitry	Compensates for process/voltage/temperature variation to maintain tight C/C#–DQ skew (< ±0.1 ns), critical for timing closure at 250 MHz.
Clock-Stop Capability	Enters low-power state with zero current draw on clocks; resumes normal operation within 1,024 cycles after clock restart-no reset required.
JTAG Boundary Scan	Supports IEEE 1149.1 testing of interconnects and I/O pins, reducing test development time and enabling in-system validation.

Applications

Network Packet Buffering	FPGA-Based Compute Acceleration
Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switches and routers. IC Role / Device Role / Timing Role: High-speed, low-latency DDR SRAM serving as line-rate packet buffer with 36-bit parallel interface to ASIC packet parser. Use Value: 250 MHz burst-2 operation sustains >1.8 Gbps throughput per device; HSTL interface ensures clean signal integrity over backplane traces.	Use Scenario: Providing local scratchpad memory for FPGA-accelerated AI inference engines processing video streams. IC Role / Device Role / Timing Role: Synchronous DDR SRAM acting as configurable on-chip memory extension for Xilinx Virtex or Intel Stratix FPGA fabric. Use Value: Byte-write enables (BW0#–BW3#) allow partial word updates without full-word reads, reducing memory traffic and latency in sparse tensor operations.
Telecom Baseband Processing	High-Performance Test Equipment
Use Scenario: Real-time buffering of IQ samples in 5G massive MIMO baseband units requiring deterministic latency. IC Role / Device Role / Timing Role: Deterministic-latency DDR SRAM interfacing directly to ADC/DAC controllers via HSTL I/O banks. Use Value: DLL-synchronized CQ/CQ# echo clocks eliminate need for external strobes, simplifying timing analysis and PCB layout.	Use Scenario: Capturing high-speed digital waveforms in automated test equipment (ATE) with multi-GHz sampling rates. IC Role / Device Role / Timing Role: High-density, low-jitter memory buffer capturing parallel bus data from DUTs into deep memory arrays. Use Value: 72 Mbit capacity and 4.0 ns cycle time support sustained capture of >100 million samples/sec with minimal dead time between acquisitions.

Network Packet Buffering

FPGA-Based Compute Acceleration

Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switches and routers.

IC Role / Device Role / Timing Role: High-speed, low-latency DDR SRAM serving as line-rate packet buffer with 36-bit parallel interface to ASIC packet parser.

Use Value: 250 MHz burst-2 operation sustains >1.8 Gbps throughput per device; HSTL interface ensures clean signal integrity over backplane traces.

Use Scenario: Providing local scratchpad memory for FPGA-accelerated AI inference engines processing video streams.

IC Role / Device Role / Timing Role: Synchronous DDR SRAM acting as configurable on-chip memory extension for Xilinx Virtex or Intel Stratix FPGA fabric.

Use Value: Byte-write enables (BW0#–BW3#) allow partial word updates without full-word reads, reducing memory traffic and latency in sparse tensor operations.

Telecom Baseband Processing

High-Performance Test Equipment

Use Scenario: Real-time buffering of IQ samples in 5G massive MIMO baseband units requiring deterministic latency.

IC Role / Device Role / Timing Role: Deterministic-latency DDR SRAM interfacing directly to ADC/DAC controllers via HSTL I/O banks.

Use Value: DLL-synchronized CQ/CQ# echo clocks eliminate need for external strobes, simplifying timing analysis and PCB layout.

Use Scenario: Capturing high-speed digital waveforms in automated test equipment (ATE) with multi-GHz sampling rates.

IC Role / Device Role / Timing Role: High-density, low-jitter memory buffer capturing parallel bus data from DUTs into deep memory arrays.

Use Value: 72 Mbit capacity and 4.0 ns cycle time support sustained capture of >100 million samples/sec with minimal dead time between acquisitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1565KV18	4M × 18-bit organization; 200 MHz max speed; QDR-II+ interface instead of DDR; different pinout and control protocol.	Targets QDR-II+ controller ecosystems (e.g., legacy networking ASICs); lacks burst-2 simplicity and HSTL Class I compatibility.	Select only when existing system uses QDR-II+ timing and 18-bit bus width; not drop-in compatible due to protocol and pin mismatch.
IS42S32400F	2M × 32-bit SDRAM (not SRAM); 166 MHz clock; requires refresh cycles; different command set and timing model.	Suitable for cost-sensitive, non-real-time applications where refresh overhead is acceptable; no DLL or echo clock features.	Choose for lower-cost, higher-density DRAM use cases; avoid where deterministic latency, no-refresh operation, or echo-clock synchronization is required.

Compared with CY7C1565KV18 and IS42S32400F, UPD44644362AF5-E40-FQ1 offers true synchronous DDR SRAM behavior with zero refresh, fixed 2-word burst, integrated DLL, and HSTL Class I compliance-making it uniquely suited for real-time, low-latency, high-integrity memory buffering in telecom and test systems.

Availability

UPD44644362AF5-E40-FQ1 is available at Aetrix Electronics and suitable for network packet buffering, FPGA-based compute acceleration, and telecom baseband processing requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for UPD44644362AF5-E40-FQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NEC Electronics (now part of Renesas Electronics) is a Japanese semiconductor manufacturer specializing in high-performance memory, microcontrollers, and analog ICs for industrial and communications infrastructure.

The μPD44644xx2 family was designed specifically for synchronous DDR SRAM applications demanding deterministic latency, HSTL-compliant signaling, and burst-2 efficiency in telecom switching, packet processing, and high-speed test equipment.

FAQ

What is the memory organization and total capacity of UPD44644362AF5-E40-FQ1?

UPD44644362AF5-E40-FQ1 has a 2,097,152-word × 36-bit organization, yielding 72 Mbit (9 MB) total capacity. This configuration supports 36-bit parallel data transfers and is optimized for high-throughput buffering in packet-processing and FPGA-accelerated systems where wide data paths reduce transaction count.

Does UPD44644362AF5-E40-FQ1 require an external clock source for both input and output timing?

Yes, UPD44644362AF5-E40-FQ1 requires two differential clock pairs: K/K# for input registration (address, control, data-in) and C/C# for output timing (data-out, echo clocks). When C/C# are tied HIGH, K/K# serve as output references-but DLL-assisted timing alignment is only active when C/C# are driven.

How does the byte-write functionality work on UPD44644362AF5-E40-FQ1?

UPD44644362AF5-E40-FQ1 provides four active-low byte-write enables (BW0#–BW3#) that independently gate write operations to each 8-bit segment of the 36-bit DQ bus. Asserting specific BWx# combinations allows selective updating of DQ0–7, DQ8–15, DQ16–23, or DQ24–35 without disturbing other bytes in the same word.

What is the role of the ZQ pin on UPD44644362AF5-E40-FQ1, and how should it be connected?

The ZQ pin on UPD44644362AF5-E40-FQ1 calibrates output driver impedance. It must be connected to a precision 240 Ω resistor to ground, setting DQ/CQ/CQ# output impedance to ~48 Ω (0.2 × 240 Ω). Direct connection to VDDQ minimizes impedance; leaving ZQ unconnected or tying to GND violates specification and degrades signal integrity.

Can UPD44644362AF5-E40-FQ1 operate without the DLL enabled, and what are the implications?

Yes, UPD44644362AF5-E40-FQ1 can operate with DLL disabled by holding DLL# LOW. In this mode, the device functions at reduced clock frequencies (<200 MHz), but AC/DC electrical characteristics-including setup/hold times and output timing-are not guaranteed. DLL must be enabled (DLL# HIGH) for full-spec operation at 250 MHz.

UPD44644362AF5-E40-FQ1 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

Programmable:: Not Verified

Memory Type:: -

Memory Format:: -

Technology:: -

Memory Size:: -

Memory Organization:: -

Memory Interface:: -

Clock Frequency:: -

Write Cycle Time - Word, Page:: -

Access Time:: -

Voltage - Supply:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

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Supplier Device Package:: -

UPD44644362AF5-E40-FQ1 FAQ

1.How can I place an order for UPD44644362AF5-E40-FQ1 through Aetrix?

Please submit a Request for Quotation (RFQ) for UPD44644362AF5-E40-FQ1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPD44644362AF5-E40-FQ1 reliable?

The price and inventory of UPD44644362AF5-E40-FQ1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD44644362AF5-E40-FQ1 is usually 5 days.

3.What payment methods are accepted for UPD44644362AF5-E40-FQ1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPD44644362AF5-E40-FQ1 transactions.

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4.How is shipping managed for UPD44644362AF5-E40-FQ1?

UPD44644362AF5-E40-FQ1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPD44644362AF5-E40-FQ1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPD44644362AF5-E40-FQ1?

For technical support, including UPD44644362AF5-E40-FQ1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD44644362AF5-E40-FQ1 requirements.

6.How does Aetrix verify that UPD44644362AF5-E40-FQ1 is sourced from the original manufacturer or authorized distributors?

All UPD44644362AF5-E40-FQ1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD44644362AF5-E40-FQ1 meets industry standards.

7.What is the process for return or replacement of UPD44644362AF5-E40-FQ1?

All UPD44644362AF5-E40-FQ1 units undergo pre-shipment inspection (PSI). If there is an issue with UPD44644362AF5-E40-FQ1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPD44644362AF5-E40-FQ1 part is unused and in its original packaging.

Return procedure for UPD44644362AF5-E40-FQ1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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