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Renesas UPD44645092AF5-E40-FQ1-A

Part No.:
UPD44645092AF5-E40-FQ1-A
Manufacturer:
Renesas
Category:
Memory
Package:
-
Datasheet:
AetrixUPD44645092AF5-E40-FQ1-A.pdf
Description:
STANDARD SRAM, 8MX9, 0.45NS
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Inventory:420

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Product details

Overview

UPD44645092AF5-E40-FQ1-A from Renesas Electronics is a 8,388,608-word × 9-bit synchronous Quad Data Rate II (QDR II) SRAM with HSTL interface, 4.0 ns clock cycle time (250 MHz), 1.8 V core supply, and 165-pin plastic BGA (15 × 17 mm) packaging. It supports burst-2 read/write operations, DLL/PLL timing control, and concurrent independent read/write ports - deployed in high-speed networking line cards and packet buffer subsystems.

For engineers reviewing the UPD44645092AF5-E40-FQ1-A datasheet, UPD44645092AF5-E40-FQ1-A pinout, UPD44645092AF5-E40-FQ1-A application, or UPD44645092AF5-E40-FQ1-A equivalent, this page delivers verified electrical specs, validated pin functions, confirmed QDR-II timing architecture, and real-world use cases in telecom infrastructure where deterministic latency and 100% bus utilization are critical.

Technical Context

The UPD44645092AF5-E40-FQ1-A implements a true dual-port synchronous architecture with physically separate read and write data paths, enabling simultaneous read and write transactions without arbitration delay. Its input clock pair (K/K#) registers address and control on K rising edge and write data on K# rising edge, while output clocks (C/C#) deliver data with matched flight time for precise DDR timing.

It integrates a DLL/PLL circuit for jitter-tolerant operation across 200–300 MHz, user-programmable output impedance (35–70 Ω via ZQ pin), and IEEE 1149.1 JTAG test access. The device uses full-CMOS six-transistor memory cells and supports clock-stop mode with 20 μs recovery to normal operation.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 8,388,608 words × 9 bits = 72 Mbit density; enables compact, high-bandwidth packet buffering in switch ASIC interfaces.
Clock Cycle Time 4.0 ns (250 MHz); defines minimum clock period for guaranteed timing compliance in backplane interconnect designs.
Supply Voltages VDD = 1.8 ± 0.1 V (core), VDDQ = 1.4–1.8 V (I/O); requires separate low-noise regulation for signal integrity in high-speed layouts.
Interface Standard HSTL Class I; mandates VREF = VDDQ/2 reference and strict VIH/VIL DC thresholds for reliable 250 MHz signaling.
Burst Operation Fixed 2-word burst; eliminates address increment logic in controller, reducing FPGA resource usage and simplifying timing closure.
Output Impedance User-tunable 35–70 Ω via ZQ pin; allows direct matching to PCB trace impedance without external series resistors.
Power Consumption IDD = 570 mA typical (250 MHz read/write), ISB1 = 360 mA typical (NOP); informs thermal design for dense multi-chip memory modules.

Pinout & Package

Package: 165-pin plastic BGA (15 mm × 17 mm, 1.0 mm pitch). Ball grid layout follows JEDEC MO-245 standard with index mark at A1 corner.

Pin/Terminal Circuit Role Design Meaning
K / K# Input clock pair K rising edge latches read address/control; K# rising edge latches write address/data - enables true DDR timing with zero skew between address and data setup.
C / C# Output clock pair C# rising edge times first output word; C rising edge times second word; provides system-level clock-data alignment for receiving PHYs.
A[0:21] Synchronous address inputs 22-bit address bus; LSB concatenated internally to generate burst-2 sequence (A, A+1); no external counter needed.
D0–D8 Synchronous data inputs 9-bit write data path; registered on both K and K# rising edges - matches QDR-II dual-edge capture requirement.
Q0–Q8 Synchronous data outputs 9-bit read data path; driven aligned to C/C# edges; high-Z during NOP or clock stop - prevents bus contention.
R# / W# Read/write strobes Active-low, registered on K rising edge; R# = LOW initiates read burst; W# = LOW initiates write burst - simple two-signal control protocol.
BW0# Byte write enable Active-low; when LOW, enables write to all 9 data bits; when HIGH, inhibits write - supports partial-word updates without read-modify-write.
ZQ Impedance calibration input Connect to resistor-to-ground (RQ); sets Q/CQ/CQ# output drive strength to 0.2 × RQ - enables on-die termination matching to 50 Ω traces.
VREF HSTL reference voltage Nominally VDDQ/2; must be decoupled locally; defines switching threshold for all HSTL inputs - critical for noise margin at 250 MHz.
DLL# DLL/PLL disable Must be HIGH (tied to VDDQ) for normal operation; LOW disables DLL/PLL for debug at sub-120 MHz - not for production use.

Key Features

Feature Design Value
Concurrent read/write ports Enables full-duplex memory access - e.g., simultaneous packet ingress buffering and egress scheduling in network processors.
100% bus utilization DDR operation Eliminates dead cycles between bursts; sustains peak bandwidth of 4.5 Gbps (9 bits × 250 MHz × 2) without gaps.
Two-tick burst architecture Reduces controller complexity - only one address issued per 2-word transaction, cutting address bus width and routing congestion.
Integrated DLL/PLL with wide valid window Compensates for PVT variation and board skew; ensures data valid window ≥ 0.4 × clock period at 250 MHz for robust sampling.
JTAG 1149.1 test access port Supports boundary-scan testing of BGA solder joints and interconnects - essential for high-reliability telecom hardware validation.

Applications

Telecom Line Card Buffering Network Processor Packet Memory

Use Scenario: High-speed packet buffering in 10G/40G Ethernet line cards where ingress traffic must be temporarily stored before classification and forwarding.

IC Role / Device Role / Timing Role: Dedicated QDR-II SRAM acting as dual-ported FIFO with deterministic 4.0 ns read/write latency and zero arbitration delay.

Use Value: Enables wire-speed buffering at 250 MHz with 100% bus utilization - avoids packet loss under sustained line-rate traffic.

Use Scenario: Shared memory pool for multi-core network processors performing parallel packet inspection, header modification, and queue management.

IC Role / Device Role / Timing Role: Synchronous dual-port SRAM providing concurrent read (for lookup) and write (for update) access to same memory space.

Use Value: Eliminates memory arbitration bottlenecks - allows full throughput from both CPU and DMA engines simultaneously.

Backplane Interconnect Cache High-Frequency Trading Engine Memory

Use Scenario: Low-latency cache for serial RapidIO or PCIe-based backplane interconnects in modular chassis systems.

IC Role / Device Role / Timing Role: Burst-2 QDR-II SRAM interfacing directly to SerDes PHYs via HSTL, synchronized to system clock domain.

Use Value: Delivers sub-8 ns round-trip latency (address-to-data) with matched CQ/CQ# echo clocks - critical for timing-critical fabric control.

Use Scenario: Ultra-low-latency order book storage and market data caching in FPGA-accelerated trading platforms.

IC Role / Device Role / Timing Role: Deterministic 4.0 ns-cycle SRAM used as front-end buffer between feed handler and execution logic.

Use Value: Guarantees worst-case 8 ns access time (2-cycle burst) - reduces total system latency below 20 ns, meeting HFT requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR-II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
Cypress CY7C2665KV18 Same 8M×9 organization, 4.0 ns cycle, 165-pin BGA; differs in VDDQ range (1.5 V only) and lacks ZQ calibration. Requires fixed 1.5 V VDDQ rail; no on-die impedance tuning - demands tighter PCB trace matching and external termination. Select when legacy 1.5 V I/O systems exist and ZQ calibration is unnecessary; verify HSTL Class I compatibility.
Integrated Device Technology (IDT) 70V9269L15PF 8M×9 QDR-II+, 3.3 ns cycle (300 MHz), 165-pin BGA; adds dynamic power-down and enhanced DLL lock range. Higher frequency headroom and lower active power (520 mA @ 300 MHz); supports faster future upgrades without PCB change. Select when system clock may scale beyond 250 MHz or when dynamic power gating is required for thermal management.

Compared with UPD44645092AF5-E40-FQ1-A, CY7C2665KV18 offers identical timing but less flexible I/O supply and no ZQ tuning, while 70V9269L15PF delivers higher speed and lower power at the cost of tighter timing margins and newer qualification status.

Availability

UPD44645092AF5-E40-FQ1-A is available at Aetrix Electronics and suitable for telecom infrastructure, network processor subsystems, and high-frequency trading hardware requiring stable component supply, long-term lifecycle support, and RoHS-compliant 165-pin BGA memory solutions.

Supply support for UPD44645092AF5-E40-FQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The UPD44645092AF5-E40-FQ1-A belongs to Renesas' QDR-II SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in packet-switched networks and real-time data processing systems.

FAQ

What is the maximum operating frequency supported by the UPD44645092AF5-E40-FQ1-A?

The UPD44645092AF5-E40-FQ1-A is rated for a 4.0 ns clock cycle time, corresponding to a maximum guaranteed operating frequency of 250 MHz under standard conditions (TA = 0–70°C, VDD = 1.8 V). Its DLL/PLL supports frequencies down to 120 MHz but is optimized for stable operation at 200–300 MHz. The UPD44645092AF5-E40-FQ1-A does not guarantee functionality above 250 MHz - for 300 MHz operation, the -E33 variant (3.3 ns) must be used.

Does the UPD44645092AF5-E40-FQ1-A support true dual-port concurrent access?

Yes, the UPD44645092AF5-E40-FQ1-A implements physically separate read and write data paths with independent control logic, enabling simultaneous read and write transactions without arbitration or latency penalty. This is confirmed in the block diagram and truth table: R# and W# can be asserted concurrently, and Q outputs and D inputs operate on independent timing paths synchronized to C/C# and K/K#, respectively. The UPD44645092AF5-E40-FQ1-A achieves true 100% bus utilization in such scenarios.

How is output impedance calibrated on the UPD44645092AF5-E40-FQ1-A?

Output impedance calibration on the UPD44645092AF5-E40-FQ1-A is performed via the ZQ pin: a precision resistor (RQ) is connected from ZQ to ground, and the device internally adjusts its Q, CQ, and CQ# driver strength to 0.2 × RQ. For example, a 240 Ω resistor yields 48 Ω output impedance. The UPD44645092AF5-E40-FQ1-A performs automatic recalibration every 20 μs after power-up to compensate for voltage/temperature drift. ZQ must never be left floating or tied to VSS.

What are the power sequencing requirements for the UPD44645092AF5-E40-FQ1-A?

The UPD44645092AF5-E40-FQ1-A requires strict power sequencing: VSS first, then VDD, then VDDQ (VDDQ must not exceed VDD by >0.5 V), then VREF, then input signals. During power-down, reverse the order. Clock must be stable for ≥20 μs after VDD/VDDQ stabilize to lock the DLL/PLL. The UPD44645092AF5-E40-FQ1-A incorporates power-on reset circuitry that forces outputs to high-Z until sequencing is complete - violating this sequence risks undefined behavior or latch-up.

Can the UPD44645092AF5-E40-FQ1-A be used with C and C# pins unconnected?

No - the C and C# pins must be either actively driven (e.g., by a clock generator) or fixed HIGH (via pull-up resistors) to ensure defined output timing. If C/C# are left unconnected, output data timing becomes unpredictable because the device defaults to using K/K# as output reference, but only when C/C# are explicitly held HIGH. The UPD44645092AF5-E40-FQ1-A datasheet states: "Operation cannot be guaranteed unless C and C# are fixed to HIGH." Leaving them floating violates HSTL input thresholds and may cause metastability.

UPD44645092AF5-E40-FQ1-A Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
-
Memory Format:
-
Technology:
-
Memory Size:
-
Memory Organization:
-
Memory Interface:
-
Clock Frequency:
-
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

UPD44645092AF5-E40-FQ1-A FAQ

1.How can I place an order for UPD44645092AF5-E40-FQ1-A through Aetrix?

Please submit a Request for Quotation (RFQ) for UPD44645092AF5-E40-FQ1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of UPD44645092AF5-E40-FQ1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD44645092AF5-E40-FQ1-A is usually 5 days.

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UPD44645092AF5-E40-FQ1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPD44645092AF5-E40-FQ1-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPD44645092AF5-E40-FQ1-A?

For technical support, including UPD44645092AF5-E40-FQ1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD44645092AF5-E40-FQ1-A requirements.

6.How does Aetrix verify that UPD44645092AF5-E40-FQ1-A is sourced from the original manufacturer or authorized distributors?

All UPD44645092AF5-E40-FQ1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD44645092AF5-E40-FQ1-A meets industry standards.

7.What is the process for return or replacement of UPD44645092AF5-E40-FQ1-A?

All UPD44645092AF5-E40-FQ1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPD44645092AF5-E40-FQ1-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPD44645092AF5-E40-FQ1-A part is unused and in its original packaging.

Return procedure for UPD44645092AF5-E40-FQ1-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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