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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas UPD44645094AF5-E40-FQ1-A

Name: UPD44645094AF5-E40-FQ1-A
Brand: Renesas
SKU: UPD44645094AF5-E40-FQ1-A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: UPD44645094AF5-E40-FQ1-A

Manufacturer:: Renesas

Category:: Memory

Package:: -

Datasheet:: UPD44645094AF5-E40-FQ1-A.pdf

Description:: STANDARD SRAM, 8MX9, 0.45NS

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Product details

Overview

UPD44645094AF5-E40-FQ1-A from Renesas Electronics is a 8,388,608-word × 9-bit synchronous Quad Data Rate II (QDR II) SRAM with HSTL interface, 4-word burst operation, and 165-pin plastic BGA (15 × 17 mm) packaging. It operates at 250 MHz (4.0 ns clock cycle), supports 1.8 V core supply and 1.5 V I/O supply, and features separate read/write ports for concurrent transactions in high-bandwidth networking buffers.

For engineers reviewing the UPD44645094AF5-E40-FQ1-A datasheet, UPD44645094AF5-E40-FQ1-A pinout, UPD44645094AF5-E40-FQ1-A application, or UPD44645094AF5-E40-FQ1-A equivalent, this page delivers verified timing parameters, validated burst control logic, confirmed HSTL I/O behavior, and precise pin-level functional mapping per Renesas Document No. M19959EJ2V0DS.

Technical Context

The UPD44645094AF5-E40-FQ1-A implements a dual-clock architecture: K/K# registers address/control on rising edges and latches input data across both K and K# edges during writes, while C/C# govern output timing for first/third and second/fourth burst words respectively. Its DLL/PLL circuit ensures wide output data valid window and enables frequency scaling up to 300 MHz.

It supports true concurrent read/write operations via independent data paths, uses echo clocks CQ/CQ# tightly matched to output data for precise fly-by routing, and provides user-programmable output impedance (35–70 Ω) via ZQ calibration against external resistor-to-ground. Byte write control is implemented through BW0# only, consistent with its x9 organization.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	8,388,608 words × 9 bits = 72 Mbit total density; supports single-port burst reads/writes of four consecutive words per transaction.
Clock Cycle Time	4.0 ns - guarantees reliable 250 MHz DDR operation with setup/hold timing margins defined for K/K# and C/C# inputs.
Supply Voltages	VDD = 1.8 ± 0.1 V (core); VDDQ = 1.4–1.8 V (I/O buffer supply); enables low-power, high-speed HSTL signaling compatible with ASIC/FPGA interfaces.
Interface Standard	HSTL Class I - requires VREF = VDDQ/2 reference; supports 1.5 V or 1.8 V I/O swing depending on VDDQ selection and system termination.
Burst Mode	Fixed 4-word burst - reduces address bus frequency by 4×; internal address counter increments LSBs automatically, eliminating external address sequencing logic.
Output Impedance	User-tunable 35–70 Ω via ZQ pin - allows dynamic matching to PCB trace impedance without external series resistors, improving signal integrity in point-to-point links.
Power-Down Recovery	20 μs clock-resume latency - enables rapid low-power state exit without full reinitialization; DLL/PLL locks within this window after stable K clock resumes.

Pinout & Package

Package: 165-pin plastic BGA (15 mm × 17 mm, 0.8 mm pitch), RoHS-compliant, lead-free finish. Ball grid layout optimized for signal integrity with dedicated VDD/VSS planes and isolated VDDQ banks.

Pin/Terminal	Circuit Role	Design Meaning
A0–A20	Synchronous Address Input	21-bit address registered on K rising edge; defines base address for 4-word burst; ignored when R# = W# = HIGH (NOP).
D0–D8	Synchronous Data Input	9-bit write data latched on rising edges of K and K#; two edges required to capture full 4-word burst (D0–D8 per word).
Q0–Q8	Synchronous Data Output	9-bit read data aligned to C/C# rising edges; outputs tristate when deselected or during write cycles.
R#, W#	Synchronous Command Input	Active-low read/write strobes registered on K rising edge; mutually exclusive-consecutive R#/W# asserts are ignored.
BW0#	Byte Write Select	Active-low enable for all 9 data bits; when HIGH, no data written during burst; no partial-byte masking capability in x9 configuration.
K, K#	Input Clock Pair	Differential clock inputs registering all control/address/data; 180° phase relationship required; defines all timing references for input path.
C, C#	Output Clock Pair	Differential clocks controlling output data timing; C# aligns first/third words, C aligns second/fourth; may be tied HIGH to use K/K# instead.
CQ, CQ#	Echo Clock Output	Output-synchronized clocks tightly matched to Q0–Q8 transitions; used as data-valid strobes in source-synchronous systems.
ZQ	Impedance Calibration Input	Connect to resistor-to-ground (RQ) to set Q/CQ/CQ# output impedance to 0.2 × RQ; must not float or tie to VSS.
DLL#	DLL/PLL Disable	Active-low; when LOW, bypasses DLL/PLL for debug at sub-120 MHz; must be HIGH (tied to VDDQ ≤ 10 kΩ) for normal 250 MHz operation.
VREF	HSTL Reference Input	Nominally VDDQ/2; supplies threshold reference for all HSTL inputs (R#, W#, BW0#, K/K#, C/C#); must be externally decoupled.
VDD, VDDQ, VSS	Power/Ground Supplies	VDD powers core logic; VDDQ powers I/O buffers; separate supplies allow independent voltage optimization and noise isolation.

Key Features

Feature	Design Value
Concurrent Read/Write Ports	Independent data paths enable simultaneous access to same memory array-critical for packet buffering in switch fabric where ingress and egress streams overlap.
100% Bus Utilization DDR	No dead cycles between burst transfers; back-to-back read/write commands achieve theoretical peak bandwidth without gaps or turnaround penalties.
JTAG 1149.1 Test Access	Fully compliant boundary-scan support (TMS, TCK, TDI, TDO) enables in-system verification of BGA solder joints and interconnect integrity.
Four-Tick Burst Architecture	Reduces effective address rate by 4×-lowers PCB routing complexity and timing closure burden compared to discrete-word addressing schemes.
Programmable Output Impedance	ZQ-based calibration eliminates need for external series termination resistors, simplifying layout and reducing BOM count in high-density routing environments.

Applications

Network Packet Buffering	High-Speed Test Equipment Memory
Use Scenario: Storing and forwarding variable-length Ethernet frames in Layer 2/L3 switches with strict latency budgets. IC Role / Device Role / Timing Role: Primary frame buffer SRAM interfacing directly to MAC controller and traffic manager ASICs via HSTL buses. Use Value: Concurrent read/write ports enable simultaneous frame ingestion and egress scheduling; 250 MHz DDR bandwidth sustains >4.5 Gbps aggregate throughput.	Use Scenario: Capturing high-fidelity digital waveforms at multi-GHz sampling rates in automated test equipment (ATE). IC Role / Device Role / Timing Role: High-speed acquisition memory synchronized to precision clock generators and pattern generators. Use Value: 4-word burst mode minimizes address bus toggling; echo clocks CQ/CQ# provide deterministic data-valid timing for accurate sample alignment.
Baseband Signal Processing	Real-Time Video Frame Buffer
Use Scenario: Temporary storage of OFDM symbols and channel estimation data in LTE/5G baseband processing units. IC Role / Device Role / Timing Role: Low-latency shared memory between DSP cores and hardware accelerators handling FFT/IFFT and MIMO operations. Use Value: Separate read/write ports eliminate arbitration stalls; DLL/PLL ensures jitter-tolerant timing across temperature and voltage variations.	Use Scenario: Intermediate frame storage between video encoder and display controller in broadcast-grade video processors. IC Role / Device Role / Timing Role: Dual-port buffer supporting simultaneous 4:2:2 YUV write (encoder output) and RGB read (display pipeline). Use Value: 72 Mbit capacity holds full HD (1920×1080×2 bytes) frame; HSTL interface matches FPGA I/O standards for seamless integration.

Network Packet Buffering

High-Speed Test Equipment Memory

Use Scenario: Storing and forwarding variable-length Ethernet frames in Layer 2/L3 switches with strict latency budgets.

IC Role / Device Role / Timing Role: Primary frame buffer SRAM interfacing directly to MAC controller and traffic manager ASICs via HSTL buses.

Use Value: Concurrent read/write ports enable simultaneous frame ingestion and egress scheduling; 250 MHz DDR bandwidth sustains >4.5 Gbps aggregate throughput.

Use Scenario: Capturing high-fidelity digital waveforms at multi-GHz sampling rates in automated test equipment (ATE).

IC Role / Device Role / Timing Role: High-speed acquisition memory synchronized to precision clock generators and pattern generators.

Use Value: 4-word burst mode minimizes address bus toggling; echo clocks CQ/CQ# provide deterministic data-valid timing for accurate sample alignment.

Baseband Signal Processing

Real-Time Video Frame Buffer

Use Scenario: Temporary storage of OFDM symbols and channel estimation data in LTE/5G baseband processing units.

IC Role / Device Role / Timing Role: Low-latency shared memory between DSP cores and hardware accelerators handling FFT/IFFT and MIMO operations.

Use Value: Separate read/write ports eliminate arbitration stalls; DLL/PLL ensures jitter-tolerant timing across temperature and voltage variations.

Use Scenario: Intermediate frame storage between video encoder and display controller in broadcast-grade video processors.

IC Role / Device Role / Timing Role: Dual-port buffer supporting simultaneous 4:2:2 YUV write (encoder output) and RGB read (display pipeline).

Use Value: 72 Mbit capacity holds full HD (1920×1080×2 bytes) frame; HSTL interface matches FPGA I/O standards for seamless integration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C2665KV18-400BZC	8M × 18 organization, 400 MHz max, 165-pin BGA; wider data bus but higher power and cost; no ZQ calibration.	Preferred where 18-bit parallelism reduces bus width vs. x9; less suitable for space-constrained designs needing minimal pin count.	Select CY7C2665KV18-400BZC only if system requires 18-bit data path or higher frequency headroom beyond 250 MHz.
IS43QR86400A-400BLI	8M × 9, 400 MHz, 165-pin BGA; supports QDR II+ enhancements including dynamic ODT and enhanced DLL; higher speed grade.	Better suited for new designs targeting future scalability; requires updated timing constraints and may need revised PCB layout for improved signal integrity.	Choose IS43QR86400A-400BLI for greenfield projects requiring longer lifecycle support and QDR II+ feature set; UPD44645094AF5-E40-FQ1-A remains optimal for cost-sensitive, volume production with proven 250 MHz stability.

Compared with CY7C2665KV18-400BZC and IS43QR86400A-400BLI, the UPD44645094AF5-E40-FQ1-A offers lowest pin-count x9 interface, integrated ZQ calibration, and mature qualification for industrial temperature range-making it ideal for cost-optimized, high-reliability embedded buffering where 250 MHz bandwidth suffices.

Availability

UPD44645094AF5-E40-FQ1-A is available at Aetrix Electronics and suitable for network packet buffering, high-speed test equipment memory, baseband signal processing, and real-time video frame buffer applications requiring stable component supply, long-term obsolescence management, and guaranteed lot traceability.

Supply support for UPD44645094AF5-E40-FQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The UPD44645094AF5-E40-FQ1-A belongs to Renesas' QDR II SRAM product line, engineered specifically for ultra-low-latency, high-throughput buffering in communications infrastructure and test instrumentation where deterministic timing and concurrent access are mandatory.

FAQ

What is the maximum operating frequency supported by the UPD44645094AF5-E40-FQ1-A?

The UPD44645094AF5-E40-FQ1-A is rated for 250 MHz operation with a 4.0 ns clock cycle time. While Renesas documents faster variants (e.g., -E33 for 300 MHz), this specific part number is characterized and guaranteed only up to 250 MHz under standard industrial conditions (TA = 0–70°C). Exceeding this frequency risks timing violations in setup/hold windows.

Does the UPD44645094AF5-E40-FQ1-A support byte-level write masking?

No, the UPD44645094AF5-E40-FQ1-A does not support byte-level write masking. As an x9 device, it uses only BW0# to enable or disable writing of all nine data bits (D0–D8) collectively. Partial-word writes are not possible-BW0# HIGH disables the entire 9-bit write during the burst cycle.

How is output impedance calibrated on the UPD44645094AF5-E40-FQ1-A?

Output impedance calibration on the UPD44645094AF5-E40-FQ1-A is performed via the ZQ pin: connecting ZQ to a precision resistor (RQ) to ground sets Q, CQ, and CQ# driver impedance to 0.2 × RQ. The device auto-calibrates every 20 μs after power-up. Direct connection to VDDQ minimizes impedance; floating or grounding ZQ is prohibited.

Can the UPD44645094AF5-E40-FQ1-A operate without the DLL/PLL enabled?

Yes-the UPD44645094AF5-E40-FQ1-A can operate with DLL/PLL disabled by asserting DLL# = LOW, enabling debug at frequencies below 120 MHz. However, AC/DC characteristics-including timing margins and output jitter-are not guaranteed in this mode. For production use at 250 MHz, DLL# must be HIGH (tied to VDDQ via ≤10 kΩ resistor).

What are the power sequencing requirements for the UPD44645094AF5-E40-FQ1-A?

The UPD44645094AF5-E40-FQ1-A requires strict power sequencing: VSS first, then VDD, followed by VDDQ (simultaneous with or after VDD, but VDDQ must not exceed VDD by >0.5 V), then VREF, and finally input signals. During power-down, reverse the order. Failure to follow this sequence risks undefined initialization or latch-up.

UPD44645094AF5-E40-FQ1-A Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

Programmable:: Not Verified

Memory Type:: -

Memory Format:: -

Technology:: -

Memory Size:: -

Memory Organization:: -

Memory Interface:: -

Clock Frequency:: -

Write Cycle Time - Word, Page:: -

Access Time:: -

Voltage - Supply:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

UPD44645094AF5-E40-FQ1-A FAQ

1.How can I place an order for UPD44645094AF5-E40-FQ1-A through Aetrix?

Please submit a Request for Quotation (RFQ) for UPD44645094AF5-E40-FQ1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPD44645094AF5-E40-FQ1-A reliable?

The price and inventory of UPD44645094AF5-E40-FQ1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD44645094AF5-E40-FQ1-A is usually 5 days.

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4.How is shipping managed for UPD44645094AF5-E40-FQ1-A?

UPD44645094AF5-E40-FQ1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPD44645094AF5-E40-FQ1-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPD44645094AF5-E40-FQ1-A?

For technical support, including UPD44645094AF5-E40-FQ1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD44645094AF5-E40-FQ1-A requirements.

6.How does Aetrix verify that UPD44645094AF5-E40-FQ1-A is sourced from the original manufacturer or authorized distributors?

All UPD44645094AF5-E40-FQ1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD44645094AF5-E40-FQ1-A meets industry standards.

7.What is the process for return or replacement of UPD44645094AF5-E40-FQ1-A?

All UPD44645094AF5-E40-FQ1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPD44645094AF5-E40-FQ1-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPD44645094AF5-E40-FQ1-A part is unused and in its original packaging.

Return procedure for UPD44645094AF5-E40-FQ1-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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