Renesas UPD44645182AF5-E33-FQ1

Overview

UPD44645182AF5-E33-FQ1 from Renesas Electronics is a 4,194,304-word × 18-bit synchronous quad data rate (QDR II) SRAM with 300 MHz clock operation, 1.8 V core supply, HSTL interface, and 165-pin plastic BGA (15 × 17 mm) packaging. It supports concurrent read/write ports, two-tick burst, DLL/PLL timing control, and clock-stop mode for low-power standby in high-bandwidth memory subsystems used in network packet buffers and FPGA co-processor caches.

For engineers reviewing the UPD44645182AF5-E33-FQ1 datasheet, UPD44645182AF5-E33-FQ1 pinout, UPD44645182AF5-E33-FQ1 application, or UPD44645182AF5-E33-FQ1 equivalent, key selection considerations include its 4M × 18 organization, 3.3 ns cycle time, dual-clock (K/K# input, C/C# output) timing architecture, HSTL I/O compatibility, and JTAG 1149.1 test access - all critical for DDR-optimized memory interfacing in telecom and computing infrastructure.

Technical Context

The UPD44645182AF5-E33-FQ1 implements a true dual-port QDR II architecture with physically separate read and write data paths, enabling simultaneous read and write transactions without bus contention. Its internal burst counter and address registry synchronize to K (read) and K# (write) rising edges, while output data is edge-aligned to C/C# for precise flight-time matching.

It integrates a DLL/PLL circuit locked to the K clock for jitter-tolerant output timing, supports user-programmable output impedance (35–70 Ω) via ZQ calibration, and features byte-write enable pins BW0#/BW1# for selective 9-bit sub-word writes. The device enters clock-stop mode within 20 μs and resumes full operation identically upon clock resumption.

Key Specifications

Pinout & Package

Package: 165-pin plastic BGA (15 mm × 17 mm, 1.0 mm ball pitch), RoHS-compliant, lead-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C2663KV18-333BZXC and AS7C34098A-33PCN, the UPD44645182AF5-E33-FQ1 uniquely combines HSTL compatibility, true dual-port concurrency, and DLL-controlled output timing - making it the only option that meets strict 3.3 ns cycle, 100 ps skew, and 600 MT/s full-bus-utilization requirements in modern FPGA-based infrastructure.

Availability

UPD44645182AF5-E33-FQ1 is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor caching, baseband signal processing, and industrial real-time control applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant manufacturing.

Supply support for UPD44645182AF5-E33-FQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The UPD44645182AF5-E33-FQ1 belongs to Renesas' QDR II SRAM product line, engineered specifically for high-throughput, low-latency memory subsystems in networking equipment, telecom base stations, and high-end FPGA acceleration platforms.

FAQ

What is the maximum operating frequency and corresponding cycle time for UPD44645182AF5-E33-FQ1?

The UPD44645182AF5-E33-FQ1 is rated for 300 MHz operation with a 3.3 ns clock cycle time. This specification is guaranteed across the commercial temperature range (0°C to +70°C) and under specified VDD (1.8 ± 0.1 V) and VDDQ (1.4–1.8 V) conditions. The device achieves 600 million transfers per second (MT/s) per data pin using double-data-rate operation on both rising and falling edges of the output clock C/C#.

Does UPD44645182AF5-E33-FQ1 support true concurrent read and write operations?

Yes, the UPD44645182AF5-E33-FQ1 implements a true dual-port QDR II architecture with physically independent read and write data paths. It allows simultaneous initiation of a READ cycle (via R#) and WRITE cycle (via W#) without bus contention or arbitration delay. This concurrency is fundamental to its use in packet buffering and real-time signal processing where deterministic latency is required.

How does the ZQ pin function in UPD44645182AF5-E33-FQ1, and what external component is required?

The ZQ pin on the UPD44645182AF5-E33-FQ1 is an input used for dynamic output impedance calibration. It must be connected to a precision resistor (RQ) tied to ground; the device sets its Q, CQ, and CQ# output driver impedance to 0.2 × RQ. For example, a 50 Ω resistor yields ~10 Ω driver impedance. ZQ cannot be left floating or tied to VSS - doing so disables calibration and risks signal integrity failure.

What are the power sequencing requirements for UPD44645182AF5-E33-FQ1 during power-up?

UPD44645182AF5-E33-FQ1 requires strict power sequencing: VSS first, then VDD, followed by VDDQ (simultaneous with or after VDD, but VDDQ must not exceed VDD by >0.5 V), then VREF, and finally input signals. DLL# must be held HIGH during power-up. Stable K clock must be applied for ≥20 μs after supplies stabilize to lock the DLL/PLL before issuing commands.

Is UPD44645182AF5-E33-FQ1 compatible with Xilinx Virtex-6 FPGAs without level-shifting?

Yes, the UPD44645182AF5-E33-FQ1's HSTL Class I interface matches the HSTL_I standard supported natively by Xilinx Virtex-6 FPGAs. With VDDQ = 1.5 V and VREF = VDDQ/2 = 0.75 V, its VIH/VIL thresholds and drive strength align directly with Virtex-6 HSTL_I receiver specifications - eliminating need for external level shifters or terminators beyond standard 50 Ω source-series or parallel termination.