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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas UPD44645182AF5-E33-FQ1-A

Name: UPD44645182AF5-E33-FQ1-A
Brand: Renesas
SKU: UPD44645182AF5-E33-FQ1-A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: UPD44645182AF5-E33-FQ1-A

Manufacturer:: Renesas

Category:: Memory

Package:: -

Datasheet:: UPD44645182AF5-E33-FQ1-A.pdf

Description:: STANDARD SRAM, 4MX18, 0.45NS

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Product details

Overview

UPD44645182AF5-E33-FQ1-A from Renesas Electronics is a 4,194,304-word × 18-bit synchronous Quad Data Rate II (QDR II) SRAM with 1.8 V core supply, HSTL interface, and 300 MHz operation (3.3 ns cycle time). It features dual independent read/write ports, DLL/PLL timing control, and 165-pin plastic BGA packaging. It is used in high-speed networking buffers, packet classification engines, and FPGA co-processor memory subsystems requiring concurrent DDR transactions.

For engineers reviewing the UPD44645182AF5-E33-FQ1-A datasheet, UPD44645182AF5-E33-FQ1-A pinout, UPD44645182AF5-E33-FQ1-A application, or UPD44645182AF5-E33-FQ1-A equivalent, key selection criteria include burst-2 QDR timing compliance, HSTL-18 I/O compatibility, 1.8 V/1.5 V dual-supply sequencing, 165-ball BGA layout constraints, and byte-write enable support for partial-word writes in telecom line-card designs.

Technical Context

This QDR II SRAM implements true simultaneous read and write operations using separate input and output data paths synchronized to K/K# (input clocks) and C/C# (output clocks), enabling 100% bus utilization. Its internal burst counter delivers two consecutive words per transaction, with address latching on K rising edge for reads and K# rising edge for writes.

The device integrates a DLL/PLL for clock deskew and wide data-valid windows, supports user-programmable output impedance (35–70 Ω) via ZQ calibration, and includes IEEE 1149.1 JTAG test access. Clock-stop mode resumes normal operation within 20 μs, and DLL# allows bypassing DLL/PLL during low-frequency debug.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	4,194,304 words × 18 bits - provides 72 Mbit density with 18-bit parallel interface for balanced bandwidth in packet buffering applications
Clock Cycle Time	3.3 ns - enables 300 MHz DDR operation with precise timing alignment between K/K# and C/C# for flight-time matching
Supply Voltages	VDD = 1.8 ± 0.1 V, VDDQ = 1.4–1.8 V - requires strict power sequencing (VSS → VDD → VDDQ → VREF) to prevent undefined behavior during startup
I/O Interface	HSTL Class I - ensures signal integrity at high speeds with controlled drive strength and termination reference at VREF = VDDQ/2
Package	165-pin plastic BGA (15 × 17 mm) - mandates 0.8 mm ball pitch layout with thermal pad grounding and impedance-controlled routing for DQ/CQ/C/C# nets
Burst Mode	2-word fixed burst - reduces command overhead and guarantees deterministic latency for back-to-back read/write cycles in switch fabric controllers
Byte Write Control	BW0# and BW1# inputs - allow selective 9-bit byte writes to upper/lower half of 18-bit word without masking logic in external controller

Pinout & Package

UPD44645182AF5-E33-FQ1-A is housed in a 165-pin plastic BGA (15 × 17 mm, 0.8 mm pitch) with exposed thermal pad. Pin assignments follow JEDEC-standard top-view layout with index mark at corner A1. Power and ground balls are distributed across the array to minimize IR drop and noise coupling.

Pin/Terminal	Circuit Role	Design Meaning
K, K#	Input clock pair	Read address/control registered on K↑; write address/data registered on K#↑; 180° phase relationship required for timing margin
C, C#	Output clock pair	Reference for Q outputs: C#↑ clocks first data, C↑ clocks second data; must be tied HIGH if using K/K# for output timing
R#, W#	Command inputs	Active-low synchronous controls; R# and W# sampled on K↑; both high = NOP (high-Z outputs)
BW0#, BW1#	Byte write enables	Active-low selects 9-bit byte lanes: 00 = full 18-bit write; 01 = lower byte; 10 = upper byte; 11 = no write
ZQ	Impedance calibration input	Connects to external resistor to ground to set Q/CQ/CQ# output impedance to 0.2 × RQ; cannot float or tie to GND
D0–D17	Data inputs	18-bit synchronous inputs registered on K↑ and K#↑; require setup/hold relative to both edges for burst write
Q0–Q17	Data outputs	18-bit synchronous outputs aligned to C#↑/C↑; high-Z when deselected or during clock stop
VDD, VDDQ, VSS	Power supplies	VDD = core logic (1.8 V); VDDQ = I/O buffer supply (1.4–1.8 V); VSS = common ground; decoupling required per ball group
VREF	Input reference	Nominally VDDQ/2; supplies bias for HSTL input receivers; must be stable before clock application
DLL#	DLL/PLL disable	High = normal operation; low = bypass DLL/PLL for low-frequency debug (AC/DC specs not guaranteed)
TMS, TDI, TCK, TDO	JTAG interface	IEEE 1149.1 compliant; TCK must tie to VSS if unused; all operate at 1.8 V I/O level

Key Features

Feature	Design Value
Dual-port concurrent access	Independent read and write ports enable simultaneous 300 MHz DDR transactions-critical for pipeline-efficient network search engines
Programmable output impedance	35–70 Ω via ZQ calibration eliminates need for external series resistors and adapts to PCB trace impedance variations
Two-tick burst architecture	Fixed 2-word burst minimizes command overhead and guarantees predictable 2-cycle latency-ideal for deterministic real-time buffering
Output clock echo (CQ/CQ#)	CQ/CQ# edges tightly track Q outputs, providing hardware-validated data-valid timing without external delay compensation
Integrated DLL/PLL	Provides wide data-valid window and scalable timing margin across process/voltage/temperature; locks within 20 μs of stable clock
Low-power clock-stop mode	Enters standby with outputs tristated and internal state preserved; resumes full operation in ≤20 μs-enables dynamic power gating in bursty traffic

Applications

Network Packet Buffer	Telecom Line Card Memory
Use Scenario: Storing ingress/egress packets in multi-gigabit Ethernet switches with strict latency budgets. IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory for packet header parsing and forwarding decision pipelines. Use Value: Concurrent read/write ports eliminate arbitration stalls; 300 MHz QDR interface sustains 10.8 GB/s aggregate bandwidth (18-bit × 300 MHz × 2).	Use Scenario: Buffering ATM/SONET cell payloads in carrier-grade optical transport equipment. IC Role / Device Role / Timing Role: Synchronous burst memory interfacing directly to SerDes PHYs and framer ASICs. Use Value: HSTL I/O and CQ echo clocks ensure clean signal delivery over long traces; byte-write enables efficient cell payload updates without full-word rewrite.
FPGA Co-Processor Cache	Real-Time Signal Processing Buffer
Use Scenario: Offloading compute-intensive tasks (e.g., FFT, filtering) from FPGA fabric using external memory acceleration. IC Role / Device Role / Timing Role: Low-latency scratchpad memory accessed by FPGA's hard IP DDR controllers or custom QDR interfaces. Use Value: 2-word burst and DLL/PLL deskew reduce round-trip latency to <6.6 ns; 165-ball BGA allows dense placement adjacent to FPGA BGA packages.	Use Scenario: Capturing and staging radar or medical ultrasound samples prior to DSP analysis. IC Role / Device Role / Timing Role: High-reliability, jitter-immune buffer synchronizing ADC sampling clocks with processing clocks. Use Value: Clock-stop capability pauses memory during idle periods without losing state; DLL# pin enables safe low-speed validation in lab environments.

Network Packet Buffer

Telecom Line Card Memory

Use Scenario: Storing ingress/egress packets in multi-gigabit Ethernet switches with strict latency budgets.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory for packet header parsing and forwarding decision pipelines.

Use Value: Concurrent read/write ports eliminate arbitration stalls; 300 MHz QDR interface sustains 10.8 GB/s aggregate bandwidth (18-bit × 300 MHz × 2).

Use Scenario: Buffering ATM/SONET cell payloads in carrier-grade optical transport equipment.

IC Role / Device Role / Timing Role: Synchronous burst memory interfacing directly to SerDes PHYs and framer ASICs.

Use Value: HSTL I/O and CQ echo clocks ensure clean signal delivery over long traces; byte-write enables efficient cell payload updates without full-word rewrite.

FPGA Co-Processor Cache

Real-Time Signal Processing Buffer

Use Scenario: Offloading compute-intensive tasks (e.g., FFT, filtering) from FPGA fabric using external memory acceleration.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory accessed by FPGA's hard IP DDR controllers or custom QDR interfaces.

Use Value: 2-word burst and DLL/PLL deskew reduce round-trip latency to <6.6 ns; 165-ball BGA allows dense placement adjacent to FPGA BGA packages.

Use Scenario: Capturing and staging radar or medical ultrasound samples prior to DSP analysis.

IC Role / Device Role / Timing Role: High-reliability, jitter-immune buffer synchronizing ADC sampling clocks with processing clocks.

Use Value: Clock-stop capability pauses memory during idle periods without losing state; DLL# pin enables safe low-speed validation in lab environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Cypress CY7C2663KV18	Same 4M×18 organization, 300 MHz, 165-ball BGA; differs in VDDQ range (1.4–1.6 V only) and lacks ZQ calibration	Requires external series termination; less tolerant of VDDQ variation; no on-die impedance tuning	Select when legacy board design uses fixed 1.5 V VDDQ and external termination is already implemented
IDT 72T36115L10PF	4M×18 QDR II+ variant with 10 ns cycle time (100 MHz); different pinout and no DLL# debug mode	Lower bandwidth (3.6 GB/s), no clock-stop, incompatible power sequencing and JTAG voltage levels	Select only for cost-sensitive, non-real-time applications where 300 MHz timing is unnecessary

Compared with UPD44645182AF5-E33-FQ1-A, CY7C2663KV18 offers identical speed and density but demands tighter VDDQ regulation and external termination, while 72T36115L10PF sacrifices >2× bandwidth and advanced power features for lower unit cost in static-buffer roles.

Availability

UPD44645182AF5-E33-FQ1-A is available at Aetrix Electronics and suitable for high-speed networking infrastructure, telecom line cards, and FPGA-accelerated embedded systems requiring stable component supply, long-lifecycle support, and RoHS-compliant manufacturing.

Supply support for UPD44645182AF5-E33-FQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and enterprise applications.

UPD44645182AF5-E33-FQ1-A belongs to Renesas' QDR II SRAM product line, engineered specifically for high-throughput, low-latency memory subsystems in networking and communications equipment where deterministic burst performance and HSTL signal integrity are critical.

FAQ

What is the correct power-up sequence for UPD44645182AF5-E33-FQ1-A?

The UPD44645182AF5-E33-FQ1-A requires strict power sequencing: apply VSS first, then VDD, then VDDQ (simultaneously with or after VDD), then VREF, and finally input signals. VDDQ must not exceed VDD by more than 0.5 V during ramp-up. Stable K clock must be applied for ≥20 μs after VDD/VDDQ stabilize to lock the DLL/PLL before issuing commands. Failure to follow this sequence may cause undefined operation or initialization failure in the UPD44645182AF5-E33-FQ1-A.

How does the UPD44645182AF5-E33-FQ1-A handle byte-level writes?

The UPD44645182AF5-E33-FQ1-A supports partial-word writes via two active-low byte write enables: BW0# controls D0–D8 (lower 9 bits), and BW1# controls D9–D17 (upper 9 bits). When both are low, the full 18-bit word is written; when only one is low, only its corresponding byte is updated. This eliminates the need for external read-modify-write logic in applications like packet header editing, and is validated in the UPD44645182AF5-E33-FQ1-A datasheet truth table and byte write operation section.

Can UPD44645182AF5-E33-FQ1-A operate without the DLL/PLL enabled?

Yes - asserting DLL# = LOW disables the DLL/PLL, allowing UPD44645182AF5-E33-FQ1-A to operate at frequencies below 120 MHz using basic clock-edge timing. However, AC/DC electrical specifications are not guaranteed in this mode, and output timing margins degrade. For production use at 300 MHz, DLL# must be tied HIGH (e.g., to VDDQ via ≤10 kΩ resistor), as specified in the UPD44645182AF5-E33-FQ1-A pin description and DLL# functional note.

What is the role of CQ and CQ# pins on UPD44645182AF5-E33-FQ1-A?

CQ and CQ# are synchronous echo clock outputs on the UPD44645182AF5-E33-FQ1-A that rise in tight alignment with Q0–Q17 data outputs - CQ# marks the valid window for the first burst word, and CQ for the second. They provide hardware-verified data-valid timing without external delay lines, simplifying receiver design in high-speed links. Unlike C/C#, CQ/CQ# continue running even when outputs are tristated, and stop only when K/K# stop.

Is UPD44645182AF5-E33-FQ1-A compatible with standard HSTL-18 interfaces?

Yes - UPD44645182AF5-E33-FQ1-A implements HSTL Class I (HSTL-18) I/O with VIH = VREF + 0.1 V (min), VIL = VREF − 0.1 V (max), and VREF = VDDQ/2 (0.68–0.95 V). Its programmable output impedance (35–70 Ω) and 1.8 V core/1.5 V I/O supply align with JEDEC HSTL-18 requirements. Interoperability is confirmed in the UPD44645182AF5-E33-FQ1-A DC characteristics table and HSTL interface feature listing.

UPD44645182AF5-E33-FQ1-A Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

Programmable:: Not Verified

Memory Type:: -

Memory Format:: -

Technology:: -

Memory Size:: -

Memory Organization:: -

Memory Interface:: -

Clock Frequency:: -

Write Cycle Time - Word, Page:: -

Access Time:: -

Voltage - Supply:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

UPD44645182AF5-E33-FQ1-A FAQ

1.How can I place an order for UPD44645182AF5-E33-FQ1-A through Aetrix?

Please submit a Request for Quotation (RFQ) for UPD44645182AF5-E33-FQ1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPD44645182AF5-E33-FQ1-A reliable?

The price and inventory of UPD44645182AF5-E33-FQ1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD44645182AF5-E33-FQ1-A is usually 5 days.

3.What payment methods are accepted for UPD44645182AF5-E33-FQ1-A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPD44645182AF5-E33-FQ1-A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UPD44645182AF5-E33-FQ1-A?

UPD44645182AF5-E33-FQ1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPD44645182AF5-E33-FQ1-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPD44645182AF5-E33-FQ1-A?

For technical support, including UPD44645182AF5-E33-FQ1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD44645182AF5-E33-FQ1-A requirements.

6.How does Aetrix verify that UPD44645182AF5-E33-FQ1-A is sourced from the original manufacturer or authorized distributors?

All UPD44645182AF5-E33-FQ1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD44645182AF5-E33-FQ1-A meets industry standards.

7.What is the process for return or replacement of UPD44645182AF5-E33-FQ1-A?

All UPD44645182AF5-E33-FQ1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPD44645182AF5-E33-FQ1-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPD44645182AF5-E33-FQ1-A part is unused and in its original packaging.

Return procedure for UPD44645182AF5-E33-FQ1-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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