Renesas UPD44645182AF5-E40-FQ1

Overview

UPD44645182AF5-E40-FQ1 from Renesas Electronics is a 4,194,304-word × 18-bit synchronous Quad Data Rate II (QDR II) SRAM with HSTL interface, 4.0 ns clock cycle time (250 MHz), 1.8 V core supply, and 165-pin plastic BGA (15 × 17 mm) packaging. It supports concurrent read/write operations, two-tick burst, DLL/PLL timing control, and JTAG 1149.1 test access - deployed in high-speed network packet buffers and FPGA co-processor memory subsystems.

For engineers reviewing the UPD44645182AF5-E40-FQ1 datasheet, UPD44645182AF5-E40-FQ1 pinout, UPD44645182AF5-E40-FQ1 application, or UPD44645182AF5-E40-FQ1 equivalent, this page delivers verified electrical specs, validated pin functions, confirmed burst timing behavior, real-world use cases in telecom infrastructure, and two rigorously cross-checked alternative parts for QDR II SRAM migration paths.

Technical Context

The UPD44645182AF5-E40-FQ1 implements dual-clock DDR architecture: K/K# clocks register address/control on rising edges (K for read, K# for write), while C/C# clocks synchronize output data delivery. Its internal burst counter enables fixed two-word bursts per transaction, achieving 100% bus utilization without turnaround cycles.

It integrates a DLL/PLL for output data valid window extension and clock skew matching, supports user-programmable output impedance (35–70 Ω via ZQ pin), and features independent read/write data ports with simultaneous transaction capability. Clock-stop mode resumes normal operation within 20 μs after clock resumption.

Key Specifications

Pinout & Package

UPD44645182AF5-E40-FQ1 is housed in a 165-pin plastic BGA (15 × 17 mm, 0.8 mm pitch), top-view layout with index mark at A1. Ball assignments follow JEDEC-standard HSTL pinout conventions, including dedicated echo clocks (CQ/CQ#), dual input/output clocks (K/K#, C/C#), and four byte-write enables (BW0#–BW1#).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C2665KV18-400BZI and AS7C34098B-25JIN, the UPD44645182AF5-E40-FQ1 uniquely balances 250 MHz performance with QDR II-specific features (echo clocks, DLL/PLL, programmable impedance) in a 1.8 V/165-BGA package - making it optimal for telecom and networking applications requiring proven interoperability with Renesas-compatible controllers.

Availability

UPD44645182AF5-E40-FQ1 is available at Aetrix Electronics and suitable for telecom infrastructure, network processor subsystems, and FPGA-based protocol analyzers requiring stable component supply, long-lifecycle support, and RoHS-compliant manufacturing.

Supply support for UPD44645182AF5-E40-FQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The UPD44645182AF5-E40-FQ1 belongs to Renesas' QDR II SRAM product line, engineered specifically for high-bandwidth, low-latency memory interfacing in networking and telecommunications equipment where deterministic burst timing and signal integrity are critical.

FAQ

What is the exact memory organization and density of the UPD44645182AF5-E40-FQ1?

The UPD44645182AF5-E40-FQ1 is organized as 4,194,304 words × 18 bits, delivering a total density of 72 Mbit. This configuration supports wide-data-path applications such as packet buffer memory in network processors and FPGA-based accelerators. Each word is accessed synchronously using 21 address lines (A0–A20), and the device performs fixed two-word bursts per transaction.

Does the UPD44645182AF5-E40-FQ1 support concurrent read and write operations?

Yes, the UPD44645182AF5-E40-FQ1 supports true concurrent read and write operations via separate, independent data ports. While a read transaction outputs data on Q0–Q17 synchronized to C/C#, a write transaction simultaneously accepts data on D0–D17 synchronized to K/K#. This dual-port capability enables full-duplex memory access essential for telecom buffering and real-time signal processing.

What are the power supply requirements for UPD44645182AF5-E40-FQ1, and how do VDD and VDDQ relate?

The UPD44645182AF5-E40-FQ1 requires VDD = 1.8 V ± 0.1 V for core logic and VDDQ = 1.4 V to 1.8 V for I/O buffers. During power-up, VDD must be applied before or simultaneously with VDDQ, and VDDQ must not exceed VDD by more than 0.5 V. VREF is derived internally as VDDQ/2 and must be stable within ±10 mV for HSTL input compliance.

How does the ZQ pin function on the UPD44645182AF5-E40-FQ1, and what external component is required?

The ZQ pin on the UPD44645182AF5-E40-FQ1 is an input used for output impedance calibration. It must be connected to a precision external resistor (RQ) tied to ground; the device sets Q, CQ, and CQ# output drive strength to 0.2 × RQ. The pin cannot be left floating or tied directly to VSS or VDDQ. Impedance recalibration occurs automatically every 20 μs after power-up.

Is the UPD44645182AF5-E40-FQ1 compatible with JTAG boundary-scan testing?

Yes, the UPD44645182AF5-E40-FQ1 includes full IEEE 1149.1 JTAG test access port (TMS, TCK, TDI, TDO) operating at 1.8 V I/O levels. When JTAG is unused, TMS and TDI may be left unconnected, but TCK must be tied to VSS. This capability enables automated optical inspection (AOI) and in-circuit testing of BGA solder joints in high-density telecom PCB assemblies.