Renesas UPD44645182AF5-E40-FQ1-A

Overview

UPD44645182AF5-E40-FQ1-A from Renesas Electronics is a 4,194,304-word × 18-bit synchronous Quad Data Rate II (QDR II) SRAM with HSTL interface, 1.8 V core supply, 4.0 ns clock cycle time (250 MHz), and 165-pin plastic BGA (15 × 17 mm) packaging. It supports concurrent read/write operations, burst-2 DDR transactions, and DLL/PLL-assisted output timing for high-speed memory subsystems in network packet buffers and baseband processors.

For engineers reviewing the UPD44645182AF5-E40-FQ1-A datasheet, UPD44645182AF5-E40-FQ1-A pinout, UPD44645182AF5-E40-FQ1-A application, or UPD44645182AF5-E40-FQ1-A equivalent, this page delivers verified electrical specs, validated 165-ball BGA pin mapping, confirmed QDR II burst-2 timing behavior, and two rigorously cross-checked alternative parts for memory subsystem design continuity.

Technical Context

The UPD44645182AF5-E40-FQ1-A implements true dual-port QDR II architecture with physically separate read and write data paths, enabling simultaneous access without arbitration overhead. Its input clock pair (K/K#) registers addresses and control on rising edges, while output clocks (C/C#) deliver synchronized data with echo clock outputs (CQ/CQ#) tightly matched to data valid windows.

It integrates a DLL/PLL for jitter-tolerant output timing scaling, user-programmable output impedance (35–70 Ω via ZQ pin), and IEEE 1149.1 JTAG test access. Byte write enable signals BW0#/BW1# allow selective 9-bit sub-word writes within the 18-bit data bus, supporting partial updates without full-word overwrite.

Key Specifications

Pinout & Package

UPD44645182AF5-E40-FQ1-A is housed in a 165-pin plastic BGA (15 × 17 mm grid, 1.0 mm ball pitch), RoHS-compliant, with exposed thermal pad. Pin functions are validated per Renesas datasheet M19958EJ2V0DS Figure 2 (μPD44645182A-A top view).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with UPD44645182AF5-E40-FQ1-A, CY7C2665KV18 offers higher speed but less flexible I/O tuning, while AS7C34098B trades performance for interface compatibility and lower unit cost - choice depends on whether timing margin, signal integrity control, or BOM cost dominates the design priority.

Availability

UPD44645182AF5-E40-FQ1-A is available at Aetrix Electronics and suitable for network packet buffering, baseband signal processing, telecom line card memory, and high-speed test equipment requiring stable component supply, long-term lifecycle support, and guaranteed RoHS-compliant sourcing.

Supply support for UPD44645182AF5-E40-FQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The UPD44645182AF5-E40-FQ1-A belongs to Renesas' QDR II SRAM product line, engineered specifically for high-bandwidth, low-latency memory subsystems in networking and telecommunications infrastructure where deterministic burst-2 DDR timing and HSTL signal integrity are mandatory.

FAQ

What is the exact memory organization and density of UPD44645182AF5-E40-FQ1-A?

UPD44645182AF5-E40-FQ1-A is organized as 4,194,304 words × 18 bits, delivering 72 Mbit (9 MB) total capacity. This configuration supports wide-data-path applications such as packet buffering and baseband processing where 18-bit or 36-bit aligned data transfers are required. The device uses full CMOS six-transistor memory cells fabricated in advanced CMOS technology.

Does UPD44645182AF5-E40-FQ1-A support true concurrent read and write operations?

Yes, UPD44645182AF5-E40-FQ1-A implements physically separate read and write data ports, allowing simultaneous access without contention. A read transaction on the Q0–Q17 outputs and a write transaction on D0–D17 inputs may occur in the same clock cycle - a defining feature of QDR II architecture confirmed in the Renesas datasheet block diagram and truth table.

What are the power supply requirements for UPD44645182AF5-E40-FQ1-A?

UPD44645182AF5-E40-FQ1-A requires two supplies: VDD = 1.7–1.9 V (nominal 1.8 V ± 0.1 V) for core logic, and VDDQ = 1.4–1.8 V (isolated) for I/O buffers. VREF must be maintained at VDDQ/2 ± 0.12 V. During power-up, VDD must be applied before VDDQ, and both must stabilize before applying clock - per Renesas' recommended sequence in datasheet section 10.

How does the ZQ pin function on UPD44645182AF5-E40-FQ1-A?

The ZQ pin on UPD44645182AF5-E40-FQ1-A is an input used for dynamic output impedance calibration. When connected to a precision resistor (typically 240 Ω) to ground, it sets Q, CQ, and CQ# driver strength to 0.2 × RQ - enabling 35–70 Ω programmable termination. It cannot be left floating or tied to VSS; calibration occurs automatically every 20 μs after power-up.

Is UPD44645182AF5-E40-FQ1-A compatible with JTAG boundary-scan testing?

Yes, UPD44645182AF5-E40-FQ1-A includes full IEEE 1149.1 JTAG support with dedicated TCK, TMS, TDI, and TDO pins operating at 1.8 V I/O level. The TCK pin must be tied to VSS if JTAG is unused; all other JTAG pins may be left unconnected. This enables in-circuit test, programming, and debug of memory subsystems per industry-standard methodology.