Renesas UPD44645182AF5-E50-FQ1

Overview

UPD44645182AF5-E50-FQ1 from Renesas Electronics is a 4,194,304-word × 18-bit synchronous Quad Data Rate II (QDR II) SRAM with HSTL interface, 1.8 V core supply, and 5.0 ns clock cycle time (200 MHz). It features dual independent read/write ports, DLL/PLL timing control, and 165-pin plastic BGA packaging. It is used in high-speed networking packet buffers and FPGA co-processor memory subsystems requiring burst-aligned DDR access.

For engineers reviewing the UPD44645182AF5-E50-FQ1 datasheet, UPD44645182AF5-E50-FQ1 pinout, UPD44645182AF5-E50-FQ1 application, or UPD44645182AF5-E50-FQ1 equivalent, key selection considerations include its 4M×18 organization, 200 MHz QDR-II timing, HSTL I/O compatibility, 165-pin BGA footprint, and support for concurrent read/write transactions with echo clocks CQ/CQ#.

Technical Context

This QDR II SRAM uses full-CMOS six-transistor memory cells and integrates synchronous peripheral circuitry including a burst counter and DLL/PLL for output data window widening. All inputs are registered on rising edges of complementary input clocks K/K#, while outputs align to rising edges of output clocks C/C# (or K/K# if C/C# are tied high).

It supports two-tick burst operation, clock-stop mode with 20 μs recovery, user-programmable output impedance (35–70 Ω), and IEEE 1149.1 JTAG test access. The device implements separate read and write data paths, enabling true concurrent transactions without bus arbitration overhead.

Key Specifications

Pinout & Package

UPD44645182AF5-E50-FQ1 is housed in a 165-pin plastic BGA (15 mm × 17 mm) with ball pitch of 0.8 mm. Pin assignments follow JEDEC MO-251 standard for QDR-II SRAMs and are validated per Renesas datasheet M19958EJ2V0DS (2nd ed., March 2010).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR-II SRAM applications.

Compared with UPD44645182AF5-E50-FQ1, CY7C2665KV18 offers higher speed but sacrifices programmable impedance and debug flexibility, while AS7C34098B trades QDR performance for simplicity in non-burst, non-synchronous contexts - neither is pin-compatible, but both serve adjacent memory architecture roles.

Availability

UPD44645182AF5-E50-FQ1 is available at Aetrix Electronics and suitable for high-speed networking packet buffers, FPGA co-processor memory subsystems, telecom baseband processing, and automated test equipment waveform memory requiring stable component supply and long-term lifecycle support.

Supply support for UPD44645182AF5-E50-FQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

UPD44645182AF5-E50-FQ1 belongs to Renesas' QDR-II SRAM product line, designed specifically for high-bandwidth, low-latency memory interfacing in networking, telecom, and test equipment where DDR timing precision and burst efficiency are critical.

FAQ

What is the maximum operating frequency of the UPD44645182AF5-E50-FQ1?

The UPD44645182AF5-E50-FQ1 is rated for a 5.0 ns clock cycle time, corresponding to a maximum operating frequency of 200 MHz in QDR-II mode. This specification is guaranteed under recommended DC and AC operating conditions (TA = 0–70°C, VDD = 1.8 ± 0.1 V). The device's DLL/PLL supports stable locking down to 120 MHz, but full timing compliance at 200 MHz requires proper power sequencing and signal integrity design.

Does the UPD44645182AF5-E50-FQ1 support concurrent read and write operations?

Yes, the UPD44645182AF5-E50-FQ1 supports true concurrent read and write operations via physically separate data paths. Its architecture includes independent read and write ports, allowing simultaneous access to the memory array without arbitration delay. This enables efficient ping-pong buffering and pipeline architectures in applications such as network packet processing and FPGA-based signal processing.

What is the purpose of the CQ and CQ# pins on the UPD44645182AF5-E50-FQ1?

The CQ and CQ# pins on the UPD44645182AF5-E50-FQ1 are synchronous echo clock outputs tightly matched to the Q0–Q17 data outputs. They provide hardware-validated timing references for the receiving device to capture data - CQ# aligns with the first output word, CQ with the second. Unlike free-running clocks, they stop only when the device is deselected, not during tristate, ensuring deterministic data valid windows.

How is output impedance calibrated on the UPD44645182AF5-E50-FQ1?

Output impedance calibration on the UPD44645182AF5-E50-FQ1 is performed using the ZQ pin. A resistor (RQ) is connected from ZQ to ground, and the device internally adjusts Q, CQ, and CQ# driver strength to 0.2 × RQ. Calibration occurs automatically every 20 μs after power-up to compensate for voltage/temperature drift. Direct connection of ZQ to VDDQ minimizes output impedance; ZQ must never be left floating or tied to VSS.

What power sequencing is required for reliable startup of the UPD44645182AF5-E50-FQ1?

The UPD44645182AF5-E50-FQ1 requires strict power sequencing: VSS first, then VDD, followed by VDDQ (simultaneous with or after VDD), then VREF, and finally input signals. VDDQ must not exceed VDD by more than 0.5 V during ramp-up. After power stabilization, a stable clock must be applied for ≥20 μs to lock the DLL/PLL before initiating transactions. Failure to follow this sequence may result in undefined behavior or initialization failure.