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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas UPD44645184AF5-E33-FQ1

Name: UPD44645184AF5-E33-FQ1
Brand: Renesas
SKU: UPD44645184AF5-E33-FQ1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: UPD44645184AF5-E33-FQ1

Manufacturer:: Renesas

Category:: Memory

Package:: -

Datasheet:: UPD44645184AF5-E33-FQ1.pdf

Description:: 72-MB DDR II+ SRAM (2M X 36-BIT)

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Product details

Overview

UPD44645184AF5-E33-FQ1 from Renesas Electronics is a 4,194,304-word × 18-bit synchronous Quad Data Rate II (QDR II) SRAM with 1.8 V core supply, HSTL interface, and 300 MHz operation (3.3 ns cycle time). It features separate read/write data ports, DLL/PLL timing control, and 165-pin plastic BGA packaging. This device serves as high-bandwidth buffer memory in network packet processors and FPGA-based communication subsystems.

For engineers reviewing the UPD44645184AF5-E33-FQ1 datasheet, UPD44645184AF5-E33-FQ1 pinout, UPD44645184AF5-E33-FQ1 application, or UPD44645184AF5-E33-FQ1 equivalent, this page delivers verified specifications, validated pin functions, confirmed QDR-II burst timing behavior, HSTL I/O electrical compliance, and real-world substitution guidance for memory subsystem design.

Technical Context

The UPD44645184AF5-E33-FQ1 implements a true dual-port QDR-II architecture with independent read and write data paths, enabling concurrent transactions without arbitration overhead. Its input clock pair (K/K#) registers address and control on rising edges, while output clocks (C/C#) synchronize 4-word burst reads with precise flight-time matching.

It integrates a DLL/PLL for jitter-tolerant output data valid window extension and supports user-programmable output impedance (35–70 Ω) via ZQ calibration. The device uses full CMOS six-transistor memory cells and operates with clock-stop capability-resuming normal operation within 20 μs after clock restart.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	4,194,304 words × 18 bits = 72 Mbit total capacity; enables wide-data-path buffering for 16-bit+ parallel interfaces.
Cycle Time / Max Frequency	3.3 ns / 300 MHz; defines minimum clock period for guaranteed DDR read/write throughput at full bus utilization.
Supply Voltages	VDD = 1.8 ± 0.1 V (core), VDDQ = 1.4–1.8 V (I/O); strict separation ensures signal integrity and noise isolation between logic and output drivers.
Interface Standard	HSTL Class I; matches JEDEC-compliant high-speed memory buses with controlled slew rate and termination-aware signaling.
Burst Length	4-word burst (2 clock cycles); reduces address bus frequency by 50% versus single-word access, easing timing closure.
Output Clocking	C/C# differential output clocks; deliver synchronized data with matched flight time to receiving device, eliminating board-level skew compensation.
Write Enable	Separate W# and BW0#/BW1# inputs; allow byte-selective writes across two 9-bit subwords without full-word overwrite.

Pinout & Package

Package: 165-pin plastic BGA (15 mm × 17 mm, 0.8 mm pitch), RoHS-compliant, lead-free finish.

Pin/Terminal	Circuit Role	Design Meaning
K, K#	Input clock pair	Registers all address/control inputs on rising edge of K; K# must be 180° out-of-phase for stable DDR timing.
C, C#	Output clock pair	Synchronizes Q0–Q17 outputs; C# times first/third data, C times second/fourth; fixed HIGH if using K/K# for output timing.
R#, W#	Read/Write command inputs	Active-low synchronous commands; registered on K rising edge; mutually exclusive per cycle (read takes precedence).
BW0#, BW1#	Byte write select inputs	Enable writing to D0–D8 (BW0# only), D9–D17 (BW1# only), both (neither asserted), or none (both asserted).
D0–D17	Data inputs	18-bit synchronous write data; registered on rising edges of both K and K# during WRITE cycle.
Q0–Q17	Data outputs	18-bit synchronous read data; driven aligned to C/C# rising edges; high-impedance when deselected or during power-up.
ZQ	Impedance calibration input	Connects to external resistor to ground to set Q/CQ/CQ# output impedance to 0.2 × RQ; cannot be left floating or tied to VSS.
DLL#	DLL/PLL disable	Pull HIGH for normal operation; pull LOW only for low-frequency debug mode (AC/DC specs not guaranteed).
VREF	HSTL reference voltage	Nominally VDDQ/2; provides threshold reference for all HSTL inputs; requires stable decoupling near device.
VDD, VDDQ, VSS	Power supplies	VDD (1.8 V core), VDDQ (1.4–1.8 V I/O), VSS (ground); require separate low-ESR decoupling per JEDEC QDR-II layout guidelines.

Key Features

Feature	Design Value
Concurrent Read/Write Ports	Enables full-duplex memory access-critical for pipeline architectures where data ingestion and egress occur simultaneously.
100% Bus Utilization DDR	Eliminates dead cycles between transfers; achieves peak bandwidth of 10.8 GB/s (18 bits × 300 MHz × 2 transitions/cycle).
Programmable Output Impedance	35–70 Ω range via ZQ calibration allows dynamic matching to PCB trace impedance, reducing reflections and improving signal integrity.
JTAG 1149.1 Test Access	Supports boundary-scan testing of interconnects without requiring dedicated test pads-reducing PCB test cost and complexity.
Four-Tick Burst Addressing	Internal address counter increments by 2 per clock, delivering fixed A, A+1, A+2, A+3 sequence-simplifies controller logic and timing margining.

Applications

Network Packet Buffering	FPGA Co-Processor Cache
Use Scenario: Storing ingress/egress packet headers and payloads in 10/40/100 Gbps line cards with real-time classification and forwarding. IC Role / Device Role / Timing Role: Dual-port QDR-II SRAM acting as zero-latency, non-blocking buffer between SERDES PHY and traffic manager ASIC. Use Value: Concurrent read/write eliminates arbitration stalls, enabling deterministic 300 MHz throughput required for wire-speed packet processing.	Use Scenario: Providing low-latency, high-bandwidth scratchpad memory for Xilinx Ultrascale+ or Intel Stratix 10 FPGA-based radar signal processors. IC Role / Device Role / Timing Role: Off-chip memory extension with HSTL-compatible interface, synchronized to FPGA's high-speed I/O banks. Use Value: 18-bit width and 4-word burst match FPGA native data paths, reducing glue logic and maximizing effective bandwidth over discrete SDRAM.
Telecom Baseband Processing	Test Equipment Pattern Memory
Use Scenario: Holding channelized IQ samples and FFT coefficients in 5G massive MIMO baseband units with strict latency constraints. IC Role / Device Role / Timing Role: High-density, low-power SRAM serving as frame-aligned buffer between ADC/DAC interfaces and DSP cores. Use Value: Clock-stop capability allows dynamic power gating during idle frames, reducing average power without compromising burst response time.	Use Scenario: Storing multi-gigabit test vectors and expected responses in automated semiconductor ATE systems with nanosecond timing resolution. IC Role / Device Role / Timing Role: Deterministic-access memory providing glitch-free stimulus delivery synchronized to pattern generator clocks. Use Value: DLL/PLL-controlled output timing ensures sub-100 ps data-valid window stability across temperature and voltage variations.

Network Packet Buffering

FPGA Co-Processor Cache

Use Scenario: Storing ingress/egress packet headers and payloads in 10/40/100 Gbps line cards with real-time classification and forwarding.

IC Role / Device Role / Timing Role: Dual-port QDR-II SRAM acting as zero-latency, non-blocking buffer between SERDES PHY and traffic manager ASIC.

Use Value: Concurrent read/write eliminates arbitration stalls, enabling deterministic 300 MHz throughput required for wire-speed packet processing.

Use Scenario: Providing low-latency, high-bandwidth scratchpad memory for Xilinx Ultrascale+ or Intel Stratix 10 FPGA-based radar signal processors.

IC Role / Device Role / Timing Role: Off-chip memory extension with HSTL-compatible interface, synchronized to FPGA's high-speed I/O banks.

Use Value: 18-bit width and 4-word burst match FPGA native data paths, reducing glue logic and maximizing effective bandwidth over discrete SDRAM.

Telecom Baseband Processing

Test Equipment Pattern Memory

Use Scenario: Holding channelized IQ samples and FFT coefficients in 5G massive MIMO baseband units with strict latency constraints.

IC Role / Device Role / Timing Role: High-density, low-power SRAM serving as frame-aligned buffer between ADC/DAC interfaces and DSP cores.

Use Value: Clock-stop capability allows dynamic power gating during idle frames, reducing average power without compromising burst response time.

Use Scenario: Storing multi-gigabit test vectors and expected responses in automated semiconductor ATE systems with nanosecond timing resolution.

IC Role / Device Role / Timing Role: Deterministic-access memory providing glitch-free stimulus delivery synchronized to pattern generator clocks.

Use Value: DLL/PLL-controlled output timing ensures sub-100 ps data-valid window stability across temperature and voltage variations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR-II SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C2665KV18	Same 4M×18 organization, 300 MHz, 1.8 V core, but uses SSTL-2 interface instead of HSTL; different VREF handling and drive strength.	Requires SSTL-2 compatible controller; not drop-in replaceable due to interface voltage thresholds and termination scheme mismatch.	Select only if existing system uses Cypress-compatible memory controllers and board layout accommodates SSTL-2 routing rules.
AS7C3256A-33JCIN	Asynchronous 256K×18 SRAM; no QDR-II timing, no burst, no DLL/PLL, no dual-port concurrency; 3.3 V supply only.	Suitable only for low-speed control-plane buffers-not for data-plane throughput-critical paths requiring 300 MHz DDR operation.	Use only for non-real-time configuration storage or status logging where bandwidth and concurrency are irrelevant.

Compared with CY7C2665KV18 and AS7C3256A-33JCIN, the UPD44645184AF5-E33-FQ1 uniquely delivers HSTL-matched 300 MHz QDR-II performance with concurrent ports and programmable impedance-making it irreplaceable in high-throughput telecom and test equipment designs where timing determinism and interface fidelity are mandatory.

Availability

UPD44645184AF5-E33-FQ1 is available at Aetrix Electronics and suitable for network infrastructure, FPGA acceleration, telecom baseband, and automated test equipment requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for UPD44645184AF5-E33-FQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The UPD44645184AF5-E33-FQ1 belongs to Renesas' QDR-II SRAM product line, engineered specifically for high-speed, low-latency, deterministic memory access in packet-switched and signal-processing systems demanding sustained DDR bandwidth.

FAQ

What is the exact memory organization and density of the UPD44645184AF5-E33-FQ1?

The UPD44645184AF5-E33-FQ1 is organized as 4,194,304 words × 18 bits, totaling 72 Mbit (9 MB) of synchronous static RAM. This configuration supports wide-data-path applications such as 16-bit or 18-bit parallel interfaces in networking and FPGA systems. Its QDR-II architecture enables simultaneous read and write operations without contention, distinguishing it from standard SSRAM or DDR SDRAM devices.

Does the UPD44645184AF5-E33-FQ1 support true concurrent read and write operations?

Yes, the UPD44645184AF5-E33-FQ1 implements a true dual-port QDR-II interface with physically separate read and write data paths. It allows overlapping read and write transactions-provided they are initiated on separate clock cycles-as confirmed by its block diagram, truth table, and bus cycle state diagram. Read operations take precedence if both R# and W# are asserted simultaneously.

What are the power supply requirements and sequencing rules for the UPD44645184AF5-E33-FQ1?

The UPD44645184AF5-E33-FQ1 requires VDD = 1.8 ± 0.1 V (core), VDDQ = 1.4–1.8 V (I/O), and VREF ≈ VDDQ/2. Power-on sequence must follow: VSS → VDD → VDDQ → VREF → VIN, with VDD applied before VDDQ and VDDQ not exceeding VDD by more than 0.5 V. DLL# must be held HIGH during initialization, and stable K/K# clock must run for ≥20 μs to lock the DLL/PLL.

How does the UPD44645184AF5-E33-FQ1 handle output impedance calibration?

The UPD44645184AF5-E33-FQ1 uses the ZQ pin to calibrate output driver impedance. A resistor (RQ) is connected from ZQ to ground; the device sets Q, CQ, and CQ# output impedance to 0.2 × RQ. Calibration occurs automatically every 20 μs after power-up. ZQ must never be left floating or tied directly to VSS-it may be tied to VDDQ for minimum impedance (≈35 Ω) if system layout permits.

Is the UPD44645184AF5-E33-FQ1 pin-compatible with other members of the μPD44645xxx family?

No-the UPD44645184AF5-E33-FQ1 shares the same 165-pin plastic BGA package with μPD44645094A-A (8M×9) and μPD44645364A-A (2M×36), but pin assignments differ significantly across variants. For example, data bus width changes (D0–D8 vs. D0–D17 vs. D0–D35), byte-write signals (BW0# only vs. BW0#/BW1# vs. BW0#–BW3#), and expansion address pins (e.g., NC/144M location) are repositioned per configuration. Direct PCB reuse is not supported.

UPD44645184AF5-E33-FQ1 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

Programmable:: Not Verified

Memory Type:: -

Memory Format:: -

Technology:: -

Memory Size:: -

Memory Organization:: -

Memory Interface:: -

Clock Frequency:: -

Write Cycle Time - Word, Page:: -

Access Time:: -

Voltage - Supply:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

UPD44645184AF5-E33-FQ1 FAQ

1.How can I place an order for UPD44645184AF5-E33-FQ1 through Aetrix?

Please submit a Request for Quotation (RFQ) for UPD44645184AF5-E33-FQ1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPD44645184AF5-E33-FQ1 reliable?

The price and inventory of UPD44645184AF5-E33-FQ1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD44645184AF5-E33-FQ1 is usually 5 days.

3.What payment methods are accepted for UPD44645184AF5-E33-FQ1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPD44645184AF5-E33-FQ1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UPD44645184AF5-E33-FQ1?

UPD44645184AF5-E33-FQ1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPD44645184AF5-E33-FQ1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPD44645184AF5-E33-FQ1?

For technical support, including UPD44645184AF5-E33-FQ1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD44645184AF5-E33-FQ1 requirements.

6.How does Aetrix verify that UPD44645184AF5-E33-FQ1 is sourced from the original manufacturer or authorized distributors?

All UPD44645184AF5-E33-FQ1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD44645184AF5-E33-FQ1 meets industry standards.

7.What is the process for return or replacement of UPD44645184AF5-E33-FQ1?

All UPD44645184AF5-E33-FQ1 units undergo pre-shipment inspection (PSI). If there is an issue with UPD44645184AF5-E33-FQ1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPD44645184AF5-E33-FQ1 part is unused and in its original packaging.

Return procedure for UPD44645184AF5-E33-FQ1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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