Renesas UPD44645184AF5-E50-FQ1

Overview

UPD44645184AF5-E50-FQ1 from Renesas Electronics is a 4,194,304-word × 18-bit synchronous Quad Data Rate II (QDR II) SRAM with 1.8 V core supply, HSTL interface, and 5.0 ns clock cycle time (200 MHz). It features separate read/write data ports, DLL/PLL timing control, and 165-pin plastic BGA packaging. This device serves as high-bandwidth buffer memory in network packet processors and telecom line cards requiring burst-mode DDR access.

For engineers reviewing the UPD44645184AF5-E50-FQ1 datasheet, UPD44645184AF5-E50-FQ1 pinout, UPD44645184AF5-E50-FQ1 application, or UPD44645184AF5-E50-FQ1 equivalent, this page delivers verified electrical specs, validated 165-pin BGA terminal mapping, confirmed QDR II burst timing behavior, and two field-validated alternative parts for memory subsystem redesigns.

Technical Context

This QDR II SRAM implements dual-clock architecture: K/K# registers address/control on rising edges, while C/C# govern output data timing with echo clocks CQ/CQ# tightly matched to data valid windows. Its internal burst counter enables four-word bursts per transaction, achieving 100% bus utilization for both read and write operations without turnaround cycles.

The device integrates user-programmable output impedance (35–70 Ω via ZQ pin), clock-stop capability (20 μs recovery), and IEEE 1149.1 JTAG test access. It supports byte-write control via BW0#/BW1# inputs and operates with independent VDD (1.8 V) and VDDQ (1.4–1.8 V) supplies to isolate core logic from I/O drivers.

Key Specifications

Pinout & Package

UPD44645184AF5-E50-FQ1 is housed in a 165-pin plastic BGA (15 mm × 17 mm, 1.0 mm pitch) with ball-grid layout optimized for high-speed signal routing and thermal dissipation. The package supports lead-free reflow profiles and includes dedicated power/ground balls for low-inductance supply delivery.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C2665KV18 and AS7C3256A-20TIN, UPD44645184AF5-E50-FQ1 delivers true QDR II performance with HSTL compatibility and programmable impedance-critical for high-speed, low-jitter memory subsystems in networking and telecom hardware.

Availability

UPD44645184AF5-E50-FQ1 is available at Aetrix Electronics and suitable for network packet processing, telecom line card buffering, and baseband signal processing requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for UPD44645184AF5-E50-FQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The UPD44645184AF5-E50-FQ1 belongs to Renesas' QDR II SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in packet-switched networks and telecom infrastructure where deterministic DDR timing and burst efficiency are essential.

FAQ

What is the maximum operating frequency supported by UPD44645184AF5-E50-FQ1?

UPD44645184AF5-E50-FQ1 is rated for 200 MHz operation with a 5.0 ns clock cycle time. While the QDR II architecture supports higher speeds (e.g., 300 MHz in the -E33 variant), this specific speed grade is validated only up to 200 MHz under specified voltage and temperature conditions (0–70°C ambient).

Does UPD44645184AF5-E50-FQ1 support true concurrent read and write operations?

Yes, UPD44645184AF5-E50-FQ1 features physically separate read and write data ports (Q0–Q17 and D0–D17), enabling simultaneous read and write transactions without bus contention or turnaround cycles-critical for ping-pong buffer architectures in networking silicon.

How is output impedance calibrated on UPD44645184AF5-E50-FQ1?

UPD44645184AF5-E50-FQ1 uses the ZQ pin to calibrate output driver impedance. A resistor (RQ) is connected from ZQ to ground; the device sets Q, CQ, and CQ# output impedance to 0.2 × RQ. Calibration occurs automatically every 20 μs after power-up to compensate for voltage and temperature drift.

Can UPD44645184AF5-E50-FQ1 operate without the DLL/PLL enabled?

Yes-pulling DLL# LOW disables the DLL/PLL, allowing operation at reduced clock frequencies for debug or initialization. However, AC/DC specifications are not guaranteed in this mode, and full 200 MHz timing compliance requires DLL# tied HIGH (e.g., to VDDQ via ≤10 kΩ resistor).

What is the purpose of the C and C# output clocks in UPD44645184AF5-E50-FQ1?

The C and C# output clocks in UPD44645184AF5-E50-FQ1 provide precise, user-controllable timing references for data capture: C# aligns with 1st/3rd output words, C aligns with 2nd/4th words. When tied HIGH, K/K# serve as fallback timing references-ensuring robustness if C/C# routing is impractical.