Renesas UPD44645362AF5-E40-FQ1

Overview

UPD44645362AF5-E40-FQ1 from Renesas Electronics is a 2,097,152-word × 36-bit synchronous Quad Data Rate II (QDR II) SRAM with 1.8 V core supply, HSTL interface, and 4.0 ns clock cycle time (250 MHz). It features separate read/write ports, DLL/PLL timing control, and 165-pin plastic BGA packaging. This device serves as high-bandwidth buffer memory in network packet processors and FPGA-based communication line cards.

For engineers reviewing the UPD44645362AF5-E40-FQ1 datasheet, UPD44645362AF5-E40-FQ1 pinout, UPD44645362AF5-E40-FQ1 application, or UPD44645362AF5-E40-FQ1 equivalent, key selection considerations include burst-2 DDR operation, user-programmable output impedance (35–70 Ω), clock-stop capability (20 μs recovery), dual-clock domain (K/K# for write, C/C# for read), and JTAG 1149.1 test access compliance.

Technical Context

The UPD44645362AF5-E40-FQ1 implements a true dual-port QDR II architecture with independent read and write data paths enabling concurrent transactions. Its internal burst counter and address registry synchronize all operations to K/K# rising edges for writes and C/C# rising edges for reads, supporting 100% bus utilization in DDR mode.

Timing is stabilized by an integrated DLL/PLL circuit referenced to the K clock, delivering a wide output data valid window and enabling future frequency scaling. The device supports byte-write masking via four active-low BW0#–BW3# inputs, allowing selective 9-bit sub-word updates within its 36-bit data width.

Key Specifications

Pinout & Package

UPD44645362AF5-E40-FQ1 is housed in a 165-pin plastic BGA (15 × 17 mm grid), with balls arranged in 11 columns (A–R) and 11 rows (1–11). Pin functions are defined per the official Renesas pin configuration diagram for the μPD44645362A-A family.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C2665KV18-400BZI and AS7C36256P-40TIN, UPD44645362AF5-E40-FQ1 uniquely combines on-die ZQ impedance tuning, true dual-port QDR II timing, and Renesas' validated 250 MHz operation-making it the only drop-in solution for new designs requiring HSTL-compliant, low-skew, high-utilization memory interfaces.

Availability

UPD44645362AF5-E40-FQ1 is available at Aetrix Electronics and suitable for network packet processors, FPGA-based line cards, and high-performance routers requiring stable component supply, long-term lifecycle support, and guaranteed RoHS-compliant manufacturing.

Supply support for UPD44645362AF5-E40-FQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and memory solutions.

The UPD44645362AF5-E40-FQ1 belongs to Renesas' QDR II SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in networking and telecommunications infrastructure where deterministic timing and signal integrity are critical.

FAQ

What is the maximum operating frequency of the UPD44645362AF5-E40-FQ1?

The UPD44645362AF5-E40-FQ1 is rated for a 4.0 ns clock cycle time, corresponding to a maximum operating frequency of 250 MHz under standard conditions (TA = 0–70°C, VDD = 1.8 V ± 0.1 V). This rating assumes proper DLL/PLL lock, stable VREF, and adherence to HSTL timing margins as specified in Renesas Document No. M19958EJ2V0DS.

Does the UPD44645362AF5-E40-FQ1 support byte-write functionality?

Yes, the UPD44645362AF5-E40-FQ1 supports granular 9-bit byte writes using four active-low control signals: BW0#, BW1#, BW2#, and BW3#. These enable selective updating of any 9-bit segment within the 36-bit data bus during a single burst write cycle, as detailed in the Byte Write Operation section of the UPD44645362AF5-E40-FQ1 datasheet.

What is the purpose of the ZQ pin on the UPD44645362AF5-E40-FQ1?

On the UPD44645362AF5-E40-FQ1, the ZQ pin serves as the output impedance calibration input. When connected to a precision resistor to ground, it adjusts the drive strength of Q, CQ, and CQ# outputs to match the system's data bus impedance-typically 35–70 Ω. This on-die calibration eliminates the need for external series termination and improves signal integrity at 250 MHz.

Can the UPD44645362AF5-E40-FQ1 operate without the DLL/PLL enabled?

The UPD44645362AF5-E40-FQ1 can operate with DLL/PLL disabled by pulling DLL# LOW, but only for debug or low-frequency use below TKHKH (MIN.). At 250 MHz, DLL# must be HIGH (tied to VDDQ) to guarantee AC timing specifications, data valid window width, and jitter performance. Operating with DLL# LOW at rated speed violates the UPD44645362AF5-E40-FQ1's guaranteed specifications.

What package type is used for the UPD44645362AF5-E40-FQ1?

The UPD44645362AF5-E40-FQ1 uses a 165-pin plastic BGA package with a 15 mm × 17 mm body size and standard pitch. This package is explicitly documented in Renesas' datasheet M19958EJ2V0DS as the mechanical form for the μPD44645362A-A family, including the UPD44645362AF5-E40-FQ1 variant.