Renesas UPD44645362AF5-E40-FQ1-A

Overview

UPD44645362AF5-E40-FQ1-A from Renesas Electronics is a 2,097,152-word × 36-bit synchronous Quad Data Rate II (QDR II) SRAM with HSTL interface, 1.8 V core supply, and 4.0 ns clock cycle time (250 MHz). It features separate read/write data ports, DLL/PLL timing control, and 165-pin plastic BGA packaging. It serves as high-bandwidth buffer memory in network packet processors and FPGA-based telecom line cards.

For engineers reviewing the UPD44645362AF5-E40-FQ1-A datasheet, UPD44645362AF5-E40-FQ1-A pinout, UPD44645362AF5-E40-FQ1-A application, or UPD44645362AF5-E40-FQ1-A equivalent, key selection criteria include burst-2 DDR operation, user-programmable output impedance (35–70 Ω), clock-stop capability (20 μs recovery), dual input clocks (K/K#), and HSTL I/O compliance at 1.8 V.

Technical Context

This QDR II SRAM implements true concurrent read/write access using independent address/data paths and dual-clock domain synchronization-K/K# for write addressing and input data registration, C/C# for read data timing alignment. Its internal burst counter and echo clocks (CQ/CQ#) enable precise data-valid window control across PCB trace skew.

The device integrates a DLL/PLL for jitter-tolerant timing scaling and supports byte-write masking via four active-low BW0#–BW3# signals. All control inputs-including R#, W#, and BWx#-are registered on the rising edge of K, enforcing strict setup/hold timing relative to K, not K#.

Key Specifications

Pinout & Package

UPD44645362AF5-E40-FQ1-A is housed in a 165-pin plastic BGA (15 × 17 mm, 0.8 mm pitch), RoHS-compliant and lead-free. Pin assignments follow JEDEC-standard top-view layout with index mark at A1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C2663KV18-400BZXC, UPD44645362AF5-E40-FQ1-A offers relaxed 1.8 V core supply and proven 250 MHz stability in telecom thermal environments; versus AS7C33256P-15JIN, it delivers 56× higher effective bandwidth and deterministic timing essential for data-plane applications.

Availability

UPD44645362AF5-E40-FQ1-A is available at Aetrix Electronics and suitable for network infrastructure, FPGA acceleration, and high-speed test equipment requiring stable component supply, long-lifecycle support, and RoHS-compliant BGA packaging.

Supply support for UPD44645362AF5-E40-FQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

UPD44645362AF5-E40-FQ1-A belongs to Renesas' QDR II SRAM product line, engineered for high-bandwidth, low-latency buffering in networking and communications systems demanding synchronous DDR operation and precise timing control.

FAQ

What is the maximum operating frequency supported by UPD44645362AF5-E40-FQ1-A?

UPD44645362AF5-E40-FQ1-A supports a maximum clock cycle time of 4.0 ns, corresponding to 250 MHz operation. This rating is guaranteed under specified conditions: VDD = 1.8 ± 0.1 V, TA = 0–70°C, and proper DLL/PLL enablement (DLL# = HIGH). Operation above 250 MHz is not characterized or supported.

Does UPD44645362AF5-E40-FQ1-A support true concurrent read and write operations?

Yes, UPD44645362AF5-E40-FQ1-A implements physically separate read and write data paths with independent address registers. This allows simultaneous 36-bit READ and 36-bit WRITE transactions without arbitration delay-critical for pipeline buffering in packet processing applications.

How is output impedance calibrated on UPD44645362AF5-E40-FQ1-A?

UPD44645362AF5-E40-FQ1-A uses the ZQ pin for on-die output impedance calibration. Connecting ZQ to a precision resistor (RQ) to ground sets Q, CQ, and CQ# driver impedance to 0.2 × RQ. The device auto-calibrates every 20 μs after power-up to compensate for voltage/temperature drift.

What are the power sequencing requirements for UPD44645362AF5-E40-FQ1-A?

UPD44645362AF5-E40-FQ1-A requires strict power sequencing: VSS first, then VDD, followed by VDDQ (VDDQ ≤ VDD + 0.5 V), then VREF. During power-down, reverse the order. Violating this sequence risks undefined behavior or latch-up. DLL# must be held HIGH after VDD/VDDQ stabilize.

Can UPD44645362AF5-E40-FQ1-A operate without the DLL/PLL enabled?

UPD44645362AF5-E40-FQ1-A can operate with DLL# pulled LOW to bypass the DLL/PLL, but only at reduced frequencies below TKHKH (MAX.)-and AC/DC characteristics are not guaranteed. For rated 250 MHz operation, DLL# must be HIGH (tied to VDDQ via ≤10 kΩ resistor).