Renesas UPD44645362AF5-E40X-FQ1

Overview

UPD44645362AF5-E40X-FQ1 from Renesas Electronics is a 2,097,152-word × 36-bit synchronous Quad Data Rate II (QDR II) SRAM with HSTL interface, 4.0 ns clock cycle time (250 MHz), 1.8 V core supply, and 165-pin plastic BGA (15 × 17 mm) packaging. It supports concurrent read/write operations, burst-2 DDR transactions, and DLL/PLL-based output timing control for high-speed memory subsystems in network packet buffers and FPGA co-processing interfaces.

For engineers reviewing the UPD44645362AF5-E40X-FQ1 datasheet, UPD44645362AF5-E40X-FQ1 pinout, UPD44645362AF5-E40X-FQ1 application, or UPD44645362AF5-E40X-FQ1 equivalent, this device delivers deterministic 250 MHz QDR II performance with separate read/write data ports, user-programmable output impedance (35–70 Ω), and JTAG 1149.1 test access - critical for high-reliability embedded memory design and timing-critical backplane interfaces.

Technical Context

The UPD44645362AF5-E40X-FQ1 implements a full CMOS six-transistor memory cell architecture with synchronous peripheral circuitry including dual input clocks (K/K#) for address/control registration and dual output clocks (C/C#) for precise data valid window alignment. Its burst-2 operation enables 100% bus utilization during both read and write cycles without turnaround overhead.

It integrates a DLL/PLL for jitter-tolerant output timing scaling, supports clock-stop mode with 20 μs recovery, and features four independent byte-write enable inputs (BW0#–BW3#) to selectively update D0–D35 subsets. All I/Os comply with HSTL Class I specifications and use VREF = VDDQ/2 reference voltage.

Key Specifications

Pinout & Package

UPD44645362AF5-E40X-FQ1 is housed in a 165-pin plastic BGA (15 × 17 mm, 1.0 mm pitch) with exposed thermal pad. Pin assignments follow JEDEC MO-251AC standard layout; ball A1 is index-marked per package drawing. Power distribution includes 24 VDD, 24 VDDQ, and 32 VSS balls for low-impedance return paths.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C2665KV18-400BZXC and AS7C362000B-40PCN, the UPD44645362AF5-E40X-FQ1 uniquely balances 250 MHz performance with 1.8 V compatibility and integrated DLL/PLL + echo clock support - reducing system-level timing validation effort while maintaining drop-in compatibility with existing Renesas QDR II layouts.

Availability

UPD44645362AF5-E40X-FQ1 is available at Aetrix Electronics and suitable for network infrastructure, FPGA acceleration, telecom baseband, and high-speed test equipment requiring stable component supply, long-lifecycle support, and RoHS-compliant manufacturing.

Supply support for UPD44645362AF5-E40X-FQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The UPD44645362AF5-E40X-FQ1 belongs to Renesas' QDR II SRAM product line, engineered specifically for high-throughput, low-latency memory interfacing in networking and signal processing systems demanding deterministic burst-2 DDR operation.

FAQ

What is the maximum operating frequency of the UPD44645362AF5-E40X-FQ1?

The UPD44645362AF5-E40X-FQ1 is rated for 250 MHz operation with a 4.0 ns clock cycle time. This specification is guaranteed across the full commercial temperature range (0–70°C) and under recommended DC operating conditions (VDD = 1.8 V ± 0.1 V). The device's DLL/PLL supports stable locking at this frequency, and timing parameters assume proper board-level signal integrity and termination.

Does the UPD44645362AF5-E40X-FQ1 support true dual-port operation?

Yes, the UPD44645362AF5-E40X-FQ1 supports true concurrent read and write operations via physically separate data ports (Q0–Q35 for read, D0–D35 for write). Unlike pseudo-dual-port SRAMs, it allows simultaneous access without arbitration or turnaround cycles - enabling sustained 100% bus utilization for both directions at 250 MHz.

How is output impedance calibrated on the UPD44645362AF5-E40X-FQ1?

Output impedance calibration on the UPD44645362AF5-E40X-FQ1 is performed using the ZQ pin. A precision resistor (RQ) is connected from ZQ to ground, and the device sets Q, CQ, and CQ# output impedance to 0.2 × RQ. The calibration runs automatically every 20 μs after power-up and tracks supply and temperature drift. ZQ must never be left floating or tied directly to GND.

Can the UPD44645362AF5-E40X-FQ1 operate without the DLL/PLL enabled?

Yes - pulling DLL# LOW disables the DLL/PLL, allowing operation at frequencies below 120 MHz for debug or low-power modes. However, AC electrical characteristics (setup/hold times, output timing) are not guaranteed in this mode. For full-specification operation at 250 MHz, DLL# must be pulled HIGH (e.g., to VDDQ via ≤10 kΩ resistor).

What is the function of the CQ and CQ# pins on the UPD44645362AF5-E40X-FQ1?

The CQ and CQ# pins on the UPD44645362AF5-E40X-FQ1 are synchronous echo clock outputs tightly matched to the Q0–Q35 data outputs. They provide hardware-verified data-valid timing references for receiving devices - CQ# aligns with the first data word, CQ with the second. These signals remain active even when Q outputs are tristated, supporting robust capture in high-speed interfaces.