Renesas UPD44645362AF5-E40X-FQ1-A

Overview

UPD44645362AF5-E40X-FQ1-A from Renesas Electronics is a 2,097,152-word × 36-bit synchronous Quad Data Rate II (QDR II) SRAM with HSTL interface, 4.0 ns clock cycle time (250 MHz), 1.8 V core supply, and 165-pin plastic BGA package. It supports concurrent read/write operations, two-tick burst transfers, and DLL/PLL-based output timing control for high-speed memory subsystems in networking and telecom equipment.

For engineers reviewing the UPD44645362AF5-E40X-FQ1-A datasheet, UPD44645362AF5-E40X-FQ1-A pinout, UPD44645362AF5-E40X-FQ1-A application, or UPD44645362AF5-E40X-FQ1-A equivalent, this device delivers deterministic DDR timing via dual input clocks (K/K#) and dual output clocks (C/C#), user-programmable output impedance (35–70 Ω), and JTAG 1149.1 test access - critical for high-reliability, low-latency buffer and cache designs.

Technical Context

This QDR II SRAM implements separate, independent read and write data ports with full bus utilization during both READ and WRITE cycles. Its architecture uses a burst counter and synchronous peripheral circuitry latched on the rising edges of K and K#, enabling true concurrent transactions without arbitration overhead.

The device integrates DLL/PLL circuitry to widen the output data valid window and support future frequency scaling, while supporting clock-stop mode with 20 μs recovery. Output impedance is tuned via ZQ pin using an external resistor to ground, and all I/Os comply with HSTL Class I specifications referenced to VREF = VDDQ/2.

Key Specifications

Pinout & Package

UPD44645362AF5-E40X-FQ1-A is housed in a 165-pin plastic BGA (15 × 17 mm) with ball pitch of 0.8 mm. The package supports standard reflow profiles and thermal management for industrial ambient temperatures (0–70°C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C2665KV18-400BAXI and AS7C3256A-15JIN, UPD44645362AF5-E40X-FQ1-A uniquely balances 250 MHz performance, concurrent port architecture, and industrial temperature support in a mature, widely deployed QDR II footprint - making it optimal for networking infrastructure requiring proven reliability over raw speed or legacy compatibility.

Availability

UPD44645362AF5-E40X-FQ1-A is available at Aetrix Electronics and suitable for network packet buffering, telecom line card caching, baseband processor memory, and test equipment pattern storage requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for UPD44645362AF5-E40X-FQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

UPD44645362AF5-E40X-FQ1-A belongs to Renesas' QDR II SRAM product line, engineered specifically for high-bandwidth, low-latency memory subsystems in networking and telecom infrastructure where deterministic timing and concurrent access are mandatory.

FAQ

What is the maximum operating frequency of UPD44645362AF5-E40X-FQ1-A?

UPD44645362AF5-E40X-FQ1-A supports a maximum clock cycle time of 4.0 ns, corresponding to 250 MHz DDR operation. This rating is validated under industrial temperature (0–70°C) and 1.8 V ±0.1 V supply conditions. Operation above 250 MHz requires the -E33 variant (3.3 ns, 300 MHz); the -E40X variant is not characterized for higher frequencies.

Does UPD44645362AF5-E40X-FQ1-A support true concurrent read and write operations?

Yes, UPD44645362AF5-E40X-FQ1-A implements physically separate read and write data paths with independent address registers, enabling simultaneous READ and WRITE transactions without arbitration or latency penalty. This is confirmed in the block diagram and truth table, where R# and W# can be asserted concurrently, and data appears on Qx and is accepted on Dx in the same clock cycle.

How is output impedance calibrated on UPD44645362AF5-E40X-FQ1-A?

UPD44645362AF5-E40X-FQ1-A uses the ZQ pin to calibrate output driver impedance. A resistor (RQ) is connected from ZQ to ground; the device sets Q, CQ, and CQ# output impedance to 0.2 × RQ. Typical values yield 35–70 Ω. The calibration runs automatically every 20 μs after power-up and tracks supply/temperature drift - no software intervention required.

What are the power sequencing requirements for UPD44645362AF5-E40X-FQ1-A?

UPD44645362AF5-E40X-FQ1-A requires strict power sequencing: VSS first, then VDD, then VDDQ (VDDQ must not exceed VDD by >0.5 V), then VREF. During power-down, reverse the order. DLL# must be held HIGH after VDD/VDDQ stabilize, and a stable clock must be applied for ≥20 μs before normal operation to lock the DLL/PLL - failure to follow causes undefined behavior.

Is UPD44645362AF5-E40X-FQ1-A compatible with JTAG boundary-scan testing?

Yes, UPD44645362AF5-E40X-FQ1-A includes a fully compliant IEEE 1149.1 JTAG test access port (TMS, TDI, TCK, TDO) operating at 1.8 V I/O levels. TCK must be tied to VSS if unused; TMS/TDI may be left unconnected. The port supports instruction register scan, data register scan, and bypass mode - verified in the Pin Identification section and Truth Table.