Renesas UPD44645362AF5-E50-FQ1-A

Overview

UPD44645362AF5-E50-FQ1-A from Renesas Electronics is a 2,097,152-word × 36-bit synchronous Quad Data Rate II (QDR II) SRAM with 1.8 V core supply, HSTL interface, and 165-pin plastic BGA (15 × 17 mm) packaging. It supports 200 MHz operation (5.0 ns clock cycle), dual independent read/write ports, and burst-2 DDR transactions for high-bandwidth networking buffer applications.

For engineers reviewing the UPD44645362AF5-E50-FQ1-A datasheet, UPD44645362AF5-E50-FQ1-A pinout, UPD44645362AF5-E50-FQ1-A application, or UPD44645362AF5-E50-FQ1-A equivalent, key selection considerations include its 2M × 36 organization, DLL/PLL-enabled output timing control, user-programmable 35–70 Ω output impedance, clock-stop capability (20 μs recovery), and JTAG 1149.1 test access.

Technical Context

This QDR II SRAM implements separate read and write data paths with concurrent transaction support, using K/K# input clocks for address/control registration and C/C# output clocks for precise data delivery timing. Its internal DLL/PLL circuit ensures wide output data valid windows across temperature and voltage variations.

The device uses full-CMOS six-transistor memory cells and integrates a burst counter, echo clocks (CQ/CQ#), and four byte-write enable inputs (BW0#–BW3#) to support selective 9-bit sub-word writes within the 36-bit data bus. All synchronous signals are registered on rising edges of K or K#.

Key Specifications

Pinout & Package

UPD44645362AF5-E50-FQ1-A is housed in a 165-pin plastic BGA (15 × 17 mm grid, 1.0 mm pitch), with ball assignments defined for 36-bit bidirectional data (D0–D35, Q0–Q35), 20-bit address (A0–A19), dual clock pairs (K/K#, C/C#), echo clocks (CQ/CQ#), four byte-write enables (BW0#–BW3#), and dedicated power/ground rails (VDD, VDDQ, VSS).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with UPD44645362AF5-E50-FQ1-A, CY7C2665KV18-500BZXC delivers double the bandwidth but requires stricter layout and power delivery; AS7C32560A-20JIN offers simpler integration at the cost of timing precision and signal integrity at 200 MHz.

Availability

UPD44645362AF5-E50-FQ1-A is available at Aetrix Electronics and suitable for high-speed network switch buffers, telecom line card memory, multi-core processor cache tag storage, and radar signal processing FIFOs requiring stable component supply across extended production lifecycles.

Supply support for UPD44645362AF5-E50-FQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

UPD44645362AF5-E50-FQ1-A belongs to Renesas' QDR II SRAM product line, engineered specifically for high-throughput, low-latency buffering in networking and communications equipment where deterministic DDR timing and concurrent access are mandatory.

FAQ

What is the maximum operating frequency supported by UPD44645362AF5-E50-FQ1-A?

UPD44645362AF5-E50-FQ1-A supports a maximum clock frequency of 200 MHz, corresponding to a 5.0 ns clock cycle time. This rating is validated across the full commercial temperature range (0°C to +70°C) and under specified VDD (1.8 ± 0.1 V) and VDDQ (1.4–1.8 V) conditions. Operation above 200 MHz is not guaranteed and may violate setup/hold timing margins.

Does UPD44645362AF5-E50-FQ1-A require external termination resistors?

No, UPD44645362AF5-E50-FQ1-A does not require external series or parallel termination resistors due to its integrated ZQ calibration circuit. Connecting the ZQ pin to an external resistor-to-ground (typically 240 Ω) automatically configures Q, CQ, and CQ# output drivers to match system trace impedance (35–70 Ω range). Leaving ZQ unconnected or tied to VSS will cause undefined output drive strength.

How does the burst-2 operation work in UPD44645362AF5-E50-FQ1-A?

UPD44645362AF5-E50-FQ1-A performs burst-2 operations by automatically accessing two consecutive memory locations per transaction: the addressed word (A) and the next sequential word (A+1). During READ, both words appear on Q0–Q35 on successive C/C# rising edges; during WRITE, both are latched on successive K/K# rising edges. No external burst counter or address increment logic is needed-the behavior is hardwired and always active.

Can UPD44645362AF5-E50-FQ1-A operate with only the K/K# clocks, without C/C#?

Yes, UPD44645362AF5-E50-FQ1-A can operate using only K/K# as the output timing reference by tying C and C# HIGH. In this mode, data outputs Q0–Q35 are synchronized to K/K# rising edges instead of C/C#. However, this eliminates flight-time matching benefits and reduces timing margin compared to using C/C# with echo clocks CQ/CQ#. The device guarantees functionality but not optimal timing performance in single-clock mode.

What is the purpose of the DLL# pin on UPD44645362AF5-E50-FQ1-A?

The DLL# pin on UPD44645362AF5-E50-FQ1-A disables the internal delay-locked loop/phase-locked loop when pulled LOW. This mode is intended solely for system debug at frequencies below the minimum DLL lock threshold (120 MHz) and invalidates all AC timing specifications. For normal operation-including all rated 200 MHz performance-DLL# must be pulled HIGH (e.g., via ≤10 kΩ resistor to VDDQ) to enable DLL/PLL-based output timing control.