Renesas UPD44645362AF5-E50X-FQ1

Overview

UPD44645362AF5-E50X-FQ1 from Renesas Electronics is a 2,097,152-word × 36-bit synchronous Quad Data Rate II (QDR II) SRAM with HSTL interface, 1.8 V core supply, and 5.0 ns clock cycle time (200 MHz). It features dual independent read/write ports, DLL/PLL timing control, and 165-pin plastic BGA packaging. This device serves as high-speed buffer memory in network packet processors and telecom line cards requiring burst-mode DDR operation.

For engineers reviewing the UPD44645362AF5-E50X-FQ1 datasheet, UPD44645362AF5-E50X-FQ1 pinout, UPD44645362AF5-E50X-FQ1 application, or UPD44645362AF5-E50X-FQ1 equivalent, key selection criteria include its 2M×36 organization, 200 MHz QDR II timing, HSTL I/O compatibility, 165-pin BGA footprint, and support for concurrent read/write transactions with echo clocks CQ/CQ#.

Technical Context

The UPD44645362AF5-E50X-FQ1 implements a true dual-port QDR II architecture with separate K/K# input clocks for address/control registration and C/C# output clocks for data timing alignment. Its internal burst counter enables fixed two-word burst transfers on every transaction, achieving 100% bus utilization in both read and write directions.

It integrates a DLL/PLL circuit synchronized to K clock for jitter-tolerant output data valid window generation, supports user-programmable output impedance (35–70 Ω) via ZQ pin, and provides IEEE 1149.1 JTAG test access. The device uses full-CMOS six-transistor memory cells and operates with independent VDD (1.8 V) and VDDQ (1.4–1.8 V) supplies.

Key Specifications

Pinout & Package

UPD44645362AF5-E50X-FQ1 is housed in a 165-pin plastic BGA (15 mm × 17 mm) with 0.8 mm ball pitch. Pin assignments follow JEDEC MO-245AC standard layout, with dedicated HSTL I/O banks, differential clock pairs (K/K#, C/C#, CQ/CQ#), and four byte-write enable signals (BW0#–BW3#) for granular 9-bit write control.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C2665KV18-500BZXC and AS7C3256A-50JCIN, UPD44645362AF5-E50X-FQ1 delivers optimal balance of 200 MHz QDR II performance, HSTL signal integrity, and 165-pin BGA manufacturability for mid-range networking equipment-avoiding over-specification while maintaining upgrade path to E40/E33 variants.

Availability

UPD44645362AF5-E50X-FQ1 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and test equipment pattern memory requiring stable component supply and long-term industrial lifecycle support.

Supply support for UPD44645362AF5-E50X-FQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The UPD44645362AF5-E50X-FQ1 belongs to Renesas' QDR II SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in networking and communications equipment operating at 200–300 MHz.

FAQ

What is the memory organization and clock speed of UPD44645362AF5-E50X-FQ1?

UPD44645362AF5-E50X-FQ1 has a 2,097,152-word × 36-bit organization and operates at 200 MHz with a 5.0 ns clock cycle time. This configuration delivers 14.4 GB/s effective bandwidth using QDR II's double-data-rate architecture on both read and write ports. The device is optimized for burst-mode applications requiring wide data paths and deterministic latency, such as packet buffering in telecom infrastructure.

Does UPD44645362AF5-E50X-FQ1 support concurrent read and write operations?

Yes, UPD44645362AF5-E50X-FQ1 supports fully concurrent read and write operations through physically independent address and data paths. Its dual-port architecture allows initiation of a read transaction on one port while simultaneously executing a write on the other, enabling seamless pipeline buffering in network processors and framer ASICs without arbitration delay.

What interface standard does UPD44645362AF5-E50X-FQ1 use and what are its voltage requirements?

UPD44645362AF5-E50X-FQ1 uses an HSTL Class I interface with 1.8 V core supply (VDD = 1.8 ± 0.1 V) and 1.4–1.8 V I/O supply (VDDQ). Input thresholds are referenced to VREF (nominally VDDQ/2), ensuring robust noise immunity at 200 MHz. This interface is compatible with FPGA and ASIC I/O banks supporting HSTL-18 signaling.

How is timing controlled on UPD44645362AF5-E50X-FQ1-does it use DLL or PLL?

UPD44645362AF5-E50X-FQ1 integrates a DLL/PLL circuit synchronized to the K input clock, generating a wide output data valid window and enabling precise clock skew matching. The DLL# pin must be held HIGH (tied to VDDQ) for normal operation; asserting DLL# LOW disables the DLL/PLL for low-frequency debugging but invalidates AC specifications.

What package type and pin count does UPD44645362AF5-E50X-FQ1 use?

UPD44645362AF5-E50X-FQ1 uses a 165-pin plastic BGA package with 15 mm × 17 mm body size and 0.8 mm ball pitch. This JEDEC MO-245AC-compliant footprint supports automated assembly and thermal dissipation in high-density networking PCBs, and includes dedicated balls for HSTL I/O, differential clocks (K/K#, C/C#, CQ/CQ#), and JTAG test access.