Renesas UPD44645364AF5-E33-FQ1
- Part No.:
- UPD44645364AF5-E33-FQ1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- -
- Datasheet:
-
UPD44645364AF5-E33-FQ1.pdf
- Description:
- STANDARD SRAM, 2MX36, 0.45NS
- Quantity:
- Payment:

- Shipping:

Inventory:2,104
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Product details
Overview
UPD44645364AF5-E33-FQ1 from Renesas Electronics is a 2,097,152-word × 36-bit synchronous Quad Data Rate II (QDR II) SRAM with HSTL interface, 3.3 ns clock cycle time (300 MHz), 1.8 V core supply, and 165-pin plastic BGA (15 × 17 mm) packaging. It supports concurrent read/write ports, four-word burst operation, and DLL/PLL-based output timing control for high-speed networking buffer applications.
For engineers reviewing the UPD44645364AF5-E33-FQ1 datasheet, UPD44645364AF5-E33-FQ1 pinout, UPD44645364AF5-E33-FQ1 application, or UPD44645364AF5-E33-FQ1 equivalent, key selection considerations include its QDR II architecture, 36-bit wide I/O, HSTL signaling compliance, 2M × 36 organization, and support for independent read/write transactions with echo clocks CQ/CQ#.
Technical Context
This device implements a true dual-port QDR II architecture with physically separate read and write data paths, enabling simultaneous access without arbitration delay. Its internal burst counter and synchronous address/data registers are clocked on rising edges of K/K#, while output data is edge-aligned to C/C# for precise flight-time matching.
The integrated DLL/PLL circuit provides a wide output data valid window and enables stable operation up to 300 MHz; DLL# input allows disabling the DLL/PLL for low-frequency debug modes. Byte write control uses four active-low BW0#–BW3# signals to enable selective 9-bit sub-word writes across the 36-bit bus.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 2,097,152 words × 36 bits - delivers 72 Mbit density with 36-bit parallel I/O for high-throughput packet buffering. |
| Clock Cycle Time | 3.3 ns (300 MHz) - defines minimum K/K# period for full-speed operation in telecom line-card and switch fabric interfaces. |
| Supply Voltages | VDD = 1.8 ± 0.1 V; VDDQ = 1.4–1.8 V - separates core logic and I/O power domains to reduce noise coupling and support HSTL-18 signaling. |
| Interface Standard | HSTL Class I - ensures compatible termination and signal integrity with FPGA/ASIC memory controllers using 1.5 V reference (VREF = VDDQ/2). |
| Burst Length | 4-word fixed burst - reduces address bus frequency by 4× and simplifies controller address generation logic. |
| Output Impedance | User-programmable 35–70 Ω via ZQ pin - enables dynamic on-die termination calibration to match PCB trace impedance without external resistors. |
| Timing Reference | C/C# output clocks + CQ/CQ# echo clocks - deliver synchronized, skew-compensated data valid windows to receiving devices. |
Pinout & Package
Package: 165-pin plastic BGA (15 mm × 17 mm, 1.0 mm pitch), RoHS-compliant, with thermal pad exposed on underside per Renesas package drawing PS-165P-M02.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| K, K# | Input clock pair | Registers all address/control inputs on rising edge of K; registers write data on both K and K# rising edges. |
| C, C# | Output clock pair | Controls output data timing: C# rising edge clocks first/third data, C rising edge clocks second/fourth data; must be tied HIGH if using K/K# for output timing. |
| CQ, CQ# | Echo clock outputs | Edge-aligned to output data Q0–Q35; used as system-level data valid indication; continue running even when Q outputs are tristated. |
| D0–D35 | Synchronous data inputs | 36-bit write data bus registered on K/K# rising edges; supports byte-selectable writes via BW0#–BW3#. |
| Q0–Q35 | Synchronous data outputs | 36-bit read data bus aligned to C/C# rising edges; high-impedance during power-up and NOP cycles. |
| R#, W# | Read/write command inputs | Active-low synchronous commands registered on K rising edge; R# takes precedence over W# in concurrent request scenarios. |
| BW0#–BW3# | Byte write select inputs | Four active-low signals enabling independent 9-bit sub-word writes: BW0#–BW3# = 0000 → full 36-bit write; 0111 → D0–D8 only, etc. |
| ZQ | Impedance calibration input | Connects to external resistor to ground (RQ); sets Q/CQ/CQ# output impedance to 0.2 × RQ; requires power-on sequence for calibration. |
| VREF | HSTL input reference | Nominally VDDQ/2 (0.68–0.95 V); supplies reference voltage for all HSTL input buffers including R#, W#, BWx#, and address pins. |
| VDD, VDDQ | Power supplies | VDD powers core logic (1.7–1.9 V); VDDQ powers I/O buffers (1.4–1.8 V); must satisfy VDDQ ≤ VDD during operation and power sequencing. |
Key Features
| Feature | Design Value |
|---|---|
| Concurrent read/write ports | Enables full-bandwidth utilization in pipeline architectures-e.g., simultaneous packet ingress (write) and egress (read) in network processors. |
| 100% bus utilization DDR operation | Eliminates dead cycles between transfers; achieves sustained 300 MT/s throughput on 36-bit bus without turnaround overhead. |
| JTAG 1149.1 test access port | Supports boundary-scan testing of interconnects to FPGAs/ASICs; TDI/TDO/TCK/TMS operate at 1.8 V I/O level. |
| Clock-stop capability | Enters low-power state within 20 μs of K/K# halt; resumes normal operation in ≤20 μs after clock restart-ideal for bursty traffic patterns. |
| Programmable output impedance | On-die termination eliminates need for discrete series resistors; ZQ calibration adapts to voltage/temperature drift every 20 μs post-power-up. |
Applications
| Network Packet Buffering | High-Speed Switch Fabric Interface |
|---|---|
|
Use Scenario: Storing variable-length Ethernet/IP packets in line-rate forwarding engines where ingress and egress paths operate independently. IC Role / Device Role / Timing Role: Dual-port QDR II SRAM acting as shared buffer with separate read/write ports synchronized to K/K# and timed by C/C# for deterministic latency. Use Value: 36-bit width matches typical 256–512-bit datapaths split across multiple devices; 300 MHz operation sustains ≥10 Gbps aggregate throughput per chip. |
Use Scenario: Interfacing between scheduler ASIC and crossbar switch in modular chassis switches requiring zero-wait-state memory access. IC Role / Device Role / Timing Role: High-density, low-latency memory providing burst-aligned data staging between control-plane scheduler and data-plane switching elements. Use Value: Four-word burst mode reduces address bus toggling by 75%; echo clocks CQ/CQ# eliminate board-level timing closure challenges for >200 MHz interfaces. |
| Telecom Line Card Memory | Test Equipment Pattern Memory |
|
Use Scenario: Deep buffering for SONET/OTN framer modules handling OC-192/STM-64 payloads with strict jitter tolerance requirements. IC Role / Device Role / Timing Role: Synchronous SRAM delivering deterministic read/write timing with DLL/PLL-generated output clocks matched to flight time of backplane traces. Use Value: HSTL interface ensures compatibility with TI/Altera telecom PHYs; 1.8 V core reduces power vs. older 2.5 V QDR parts while maintaining speed. |
Use Scenario: Storing high-fidelity digital stimulus/response patterns in automated test equipment (ATE) for SoC validation at multi-GHz rates. IC Role / Device Role / Timing Role: Precision-timed memory subsystem generating repeatable, jitter-free waveforms synchronized to instrument master clock. Use Value: Clock-stop capability enables power gating between test vectors; user-programmable impedance maintains signal fidelity across varying load conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C2665KV18 | 2M × 18 organization, 165-pin FBGA, 300 MHz max, same HSTL I/O but no CQ/CQ# echo clocks | Limited to 18-bit datapaths; lacks echo clock support for advanced timing closure in high-speed systems | Select when 18-bit width suffices and echo-clock-based skew compensation is not required. |
| AS7C362000B-33JIN | 2M × 36, 165-pin BGA, 333 MHz max, SSTL-2 interface (not HSTL), no DLL/PLL or ZQ calibration | Requires SSTL-2 termination scheme; lacks on-die impedance tuning and DLL-based timing margin extension | Select for cost-sensitive designs where 333 MHz speed is critical and HSTL compatibility is not mandated. |
Compared with CY7C2665KV18 and AS7C362000B-33JIN, UPD44645364AF5-E33-FQ1 uniquely combines 36-bit width, HSTL-18 compliance, echo clocks CQ/CQ#, and programmable ZQ termination-making it optimal for high-reliability telecom and test equipment where timing precision and signal integrity are non-negotiable.
Availability
UPD44645364AF5-E33-FQ1 is available at Aetrix Electronics and suitable for network packet buffering, high-speed switch fabric interface, telecom line card memory, and test equipment pattern memory requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for UPD44645364AF5-E33-FQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The UPD44645364AF5-E33-FQ1 belongs to Renesas' QDR II SRAM product line, designed specifically for high-bandwidth, low-latency buffering in networking and communications equipment operating at OC-192/STM-64 and beyond.
FAQ
What is the memory organization and density of the UPD44645364AF5-E33-FQ1?
The UPD44645364AF5-E33-FQ1 is organized as 2,097,152 words × 36 bits, delivering a total density of 72 Mbit. This configuration supports high-throughput data paths common in networking ASICs and packet processors, and is implemented in a 165-pin plastic BGA package with 15 mm × 17 mm footprint.
Does the UPD44645364AF5-E33-FQ1 support concurrent read and write operations?
Yes, the UPD44645364AF5-E33-FQ1 features physically separate read and write data ports, enabling true concurrent transactions without arbitration delay. The device uses independent address latching and burst counters for each port, allowing simultaneous access-critical for applications like switch fabric buffering where ingress and egress paths must operate in parallel.
What interface standard does the UPD44645364AF5-E33-FQ1 use, and what are its voltage requirements?
The UPD44645364AF5-E33-FQ1 uses the HSTL Class I interface standard. It requires VDD = 1.8 ± 0.1 V for core logic and VDDQ = 1.4–1.8 V for I/O buffers, with VREF = VDDQ/2 (0.68–0.95 V) serving as the input reference. These specifications ensure compatibility with FPGA and ASIC memory controllers designed for HSTL-18 signaling.
How does the UPD44645364AF5-E33-FQ1 handle output timing and clock skew compensation?
The UPD44645364AF5-E33-FQ1 provides two mechanisms: (1) C/C# output clocks that drive data timing, with C# controlling first/third words and C controlling second/fourth words; and (2) CQ/CQ# echo clocks tightly aligned to output data edges-used as system-level data valid indicators. Together, they compensate for flight-time skew between clock and data paths on the PCB.
Can the UPD44645364AF5-E33-FQ1 be used in clock-gated or low-power modes?
Yes, the UPD44645364AF5-E33-FQ1 supports clock-stop mode: when K/K# are halted, the device enters a low-power state within 20 μs and resumes full operation in ≤20 μs after clock resumption. During stop mode, outputs go high-impedance and internal logic is held, making it suitable for bursty traffic applications where power efficiency is essential.
UPD44645364AF5-E33-FQ1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
UPD44645364AF5-E33-FQ1 FAQ
1.How can I place an order for UPD44645364AF5-E33-FQ1 through Aetrix?
Please submit a Request for Quotation (RFQ) for UPD44645364AF5-E33-FQ1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPD44645364AF5-E33-FQ1 reliable?
The price and inventory of UPD44645364AF5-E33-FQ1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD44645364AF5-E33-FQ1 is usually 5 days.
3.What payment methods are accepted for UPD44645364AF5-E33-FQ1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPD44645364AF5-E33-FQ1 transactions.
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UPD44645364AF5-E33-FQ1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPD44645364AF5-E33-FQ1?
For technical support, including UPD44645364AF5-E33-FQ1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD44645364AF5-E33-FQ1 requirements.
6.How does Aetrix verify that UPD44645364AF5-E33-FQ1 is sourced from the original manufacturer or authorized distributors?
All UPD44645364AF5-E33-FQ1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD44645364AF5-E33-FQ1 meets industry standards.
7.What is the process for return or replacement of UPD44645364AF5-E33-FQ1?
All UPD44645364AF5-E33-FQ1 units undergo pre-shipment inspection (PSI). If there is an issue with UPD44645364AF5-E33-FQ1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPD44645364AF5-E33-FQ1 part is unused and in its original packaging.
Return procedure for UPD44645364AF5-E33-FQ1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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