Renesas UPD44645364AF5-E40-FQ1

Overview

UPD44645364AF5-E40-FQ1 from Renesas Electronics is a 2,097,152-word × 36-bit synchronous Quad Data Rate II (QDR II) SRAM with HSTL interface, 4-word burst operation, and 1.8 V core supply. It delivers 250 MHz clock frequency (4.0 ns cycle time), supports concurrent read/write ports, and is packaged in a 165-pin plastic BGA (15 × 17 mm). It serves as high-bandwidth buffer memory in network packet processors and FPGA-based data path acceleration.

For engineers reviewing the UPD44645364AF5-E40-FQ1 datasheet, UPD44645364AF5-E40-FQ1 pinout, UPD44645364AF5-E40-FQ1 application, or UPD44645364AF5-E40-FQ1 equivalent, key selection considerations include its QDR II timing architecture, 36-bit wide I/O, DLL/PLL-enabled output timing control, byte-write granularity via BW0#–BW3#, and strict 1.8 V ±0.1 V core supply compliance.

Technical Context

The UPD44645364AF5-E40-FQ1 implements a dual-clock QDR II architecture: K/K# registers all inputs on rising edges, while C/C# governs output data timing with precise flight-time matching. Its internal burst counter generates fixed +0/+1/+2/+3 address offsets for every transaction, enabling full bus utilization without external address sequencing.

It integrates independent read and write data paths with separate input/output buffers, allowing simultaneous read and write operations when initiated on non-overlapping clock cycles. The DLL/PLL circuit ensures stable output data valid windows across process/voltage/temperature variation, supporting reliable 250 MHz operation with user-programmable output impedance (35–70 Ω) via ZQ calibration.

Key Specifications

Pinout & Package

UPD44645364AF5-E40-FQ1 is housed in a 165-pin plastic BGA (15 mm × 17 mm, 1.0 mm pitch), RoHS-compliant, with balls arranged in a 11×15 grid (A1–R11). The package supports automated reflow assembly and thermal dissipation up to 1.2 W under typical operating conditions.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C2665KV18-400BZI and AS7C3256A-15JIN, the UPD44645364AF5-E40-FQ1 uniquely balances 250 MHz QDR II performance with HSTL compatibility, programmable impedance, and integrated echo clocks-making it optimal for new designs targeting robust, scalable high-speed memory interfacing without over-spec'ing speed or sacrificing signal integrity.

Availability

UPD44645364AF5-E40-FQ1 is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processing memory, telecom line card buffering, and high-speed test equipment memory requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for UPD44645364AF5-E40-FQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The UPD44645364AF5-E40-FQ1 belongs to Renesas' QDR II SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in networking infrastructure and FPGA-accelerated systems where deterministic timing and concurrent access are critical.

FAQ

What is the memory organization and total capacity of the UPD44645364AF5-E40-FQ1?

The UPD44645364AF5-E40-FQ1 is organized as 2,097,152 words × 36 bits, delivering a total capacity of 72 Mbit (9 MB). This configuration supports wide-data-path applications such as packet buffering and FPGA co-processing, where high throughput per access cycle is essential. The device uses a full CMOS six-transistor memory cell fabricated in advanced CMOS technology.

Does the UPD44645364AF5-E40-FQ1 support concurrent read and write operations?

Yes, the UPD44645364AF5-E40-FQ1 features separate independent read and write data ports, enabling concurrent transactions. While read and write commands cannot be initiated on the same K clock edge, the internal architecture allows overlapping execution-e.g., a read burst can complete while a write burst is in progress-maximizing bus utilization and reducing system latency.

What interface standard does the UPD44645364AF5-E40-FQ1 use, and what are its voltage requirements?

The UPD44645364AF5-E40-FQ1 uses the HSTL Class I interface standard. It requires VDD = 1.8 V ±0.1 V for the core and VDDQ = 1.4–1.8 V for the I/O supply, with VREF = VDDQ/2 as the input reference. These specifications ensure compatibility with industry-standard HSTL-18 drivers and receivers in high-speed memory subsystems.

How does the DLL/PLL circuit in the UPD44645364AF5-E40-FQ1 improve timing performance?

The DLL/PLL in the UPD44645364AF5-E40-FQ1 stabilizes output data timing against PVT variation, widening the data valid window and enabling reliable 250 MHz operation. It locks to the K clock input and aligns C/C# and CQ/CQ# outputs to minimize clock skew-ensuring precise source-synchronous capture at the receiving device without requiring complex board-level deskew.

Can the UPD44645364AF5-E40-FQ1 be used with a stopped clock, and how quickly does it resume operation?

Yes, the UPD44645364AF5-E40-FQ1 supports clock-stop mode. When K/K# are halted, the device enters a low-power state and maintains internal state. Normal operation resumes within 20 μs after clock resumption-enabling dynamic power management in burst-oriented systems without loss of data integrity or timing lock.