Renesas UPD44645364AF5-E50-FQ1-A

Overview

UPD44645364AF5-E50-FQ1-A from Renesas Electronics is a 2,097,152-word × 36-bit synchronous Quad Data Rate II (QDR II) SRAM with HSTL interface, 1.8 V core supply, and 5.0 ns clock cycle time (200 MHz). It features separate read/write ports, DLL/PLL timing control, and 165-pin plastic BGA packaging for high-bandwidth networking buffer applications.

For engineers reviewing the UPD44645364AF5-E50-FQ1-A datasheet, UPD44645364AF5-E50-FQ1-A pinout, UPD44645364AF5-E50-FQ1-A application, or UPD44645364AF5-E50-FQ1-A equivalent, this page delivers verified specifications, validated pin functions, confirmed QDR-II burst timing behavior, real-world bus utilization data, and two rigorously cross-checked alternative parts for memory subsystem design.

Technical Context

The UPD44645364AF5-E50-FQ1-A implements true concurrent read/write operations using independent data paths and dual-clock domain synchronization-K/K# for input registration and C/C# for output timing alignment. Its internal burst counter delivers four-word bursts per transaction with fixed address incrementing (A, A+1, A+2, A+3).

Built on advanced CMOS with full six-transistor cells, it integrates DLL/PLL circuitry to widen the output data valid window and supports clock-stop mode with 20 μs recovery. Byte write control uses four active-low BW0#–BW3# signals to enable selective 9-bit subword writes across its 36-bit data bus.

Key Specifications

Pinout & Package

UPD44645364AF5-E50-FQ1-A is housed in a 165-pin plastic BGA package (15 mm × 17 mm, 1.0 mm ball pitch) with standard JEDEC footprint and thermal pad-less construction. Pin assignments follow top-view layout with index mark at A1 corner.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR-II SRAM applications.

Compared with UPD44645364AF5-E50-FQ1-A, CY7C2663KV18-5BBAXC offers identical density and speed but demands SSTL-compatible layout changes, while AS7C3256B-20JIN lacks QDR architecture entirely-making it a functional downgrade rather than a drop-in option.

Availability

UPD44645364AF5-E50-FQ1-A is available at Aetrix Electronics and suitable for high-speed network switch buffers, backplane interconnect memory, packet classification engine caches, and real-time video frame buffers requiring stable component supply across extended production lifecycles.

Supply support for UPD44645364AF5-E50-FQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

UPD44645364AF5-E50-FQ1-A belongs to Renesas' QDR-II SRAM product line, engineered specifically for high-bandwidth, low-latency memory subsystems in networking and telecom infrastructure where deterministic burst timing and concurrent access are mandatory.

FAQ

What is the maximum operating frequency supported by UPD44645364AF5-E50-FQ1-A?

UPD44645364AF5-E50-FQ1-A supports a maximum clock frequency of 200 MHz, corresponding to a 5.0 ns clock cycle time. This rating is guaranteed under recommended DC and AC operating conditions (TA = 0 to 70°C, VDD = 1.8 ± 0.1 V, VDDQ = 1.4–1.8 V). Operation above 200 MHz is not characterized or supported.

Does UPD44645364AF5-E50-FQ1-A support true simultaneous read and write operations?

Yes, UPD44645364AF5-E50-FQ1-A implements physically separate read and write data paths, enabling concurrent transactions without arbitration delay. The device's block diagram confirms independent input registry/logic and output select/buffer stages, allowing one 4-word burst read and one 4-word burst write to overlap in time-provided R# and W# are not asserted simultaneously on the same K rising edge.

How is output impedance calibrated on UPD44645364AF5-E50-FQ1-A?

UPD44645364AF5-E50-FQ1-A uses the ZQ pin for dynamic output impedance calibration. A resistor (RQ) is connected from ZQ to ground, and the device sets Q, CQ, and CQ# output impedance to 0.2 × RQ. Calibration occurs automatically every 20 μs after power-up. ZQ must never be left floating or tied directly to GND.

Can UPD44645364AF5-E50-FQ1-A operate without the DLL/PLL enabled?

Yes-pulling DLL# LOW disables the DLL/PLL, allowing operation at frequencies below 120 MHz for debug or low-speed validation. However, AC/DC characteristics are not guaranteed in this mode. For full-spec 200 MHz operation, DLL# must be HIGH (typically tied to VDDQ via ≤10 kΩ resistor) to engage the timing compensation circuitry.

What is the function of the CQ and CQ# pins on UPD44645364AF5-E50-FQ1-A?

CQ and CQ# are echo clock outputs on UPD44645364AF5-E50-FQ1-A, synchronized to the Q data outputs with minimal skew. They serve as source-synchronous data-valid strobes for the receiving logic-enabling precise capture of burst data without requiring complex clock-data alignment circuits. These signals continue running even when Q outputs are tristated.