Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas UPD44646183AF5-E25-FQ1-A

Name: UPD44646183AF5-E25-FQ1-A
Brand: Renesas
SKU: UPD44646183AF5-E25-FQ1-A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: UPD44646183AF5-E25-FQ1-A

Manufacturer:: Renesas

Category:: Memory

Package:: 165-LBGA

Datasheet:: UPD44646183AF5-E25-FQ1-A.pdf

Description:: IC SRAM 72MBIT PARALLEL 165PBGA

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,847

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

UPD44646183AF5-E25-FQ1-A from Renesas Electronics is a 4,194,304-word × 18-bit synchronous double data rate (DDR II+) SRAM with 2.5 clock cycles read latency, 1.8 V core supply, HSTL interface, and 165-pin plastic BGA (15 × 17) packaging. It delivers 400 MHz operation (2.5 ns cycle time), supports pipelined DDR burst reads/writes, and integrates DLL/PLL, ODT, QVLD, and JTAG 1149.1 for high-speed memory subsystems in networking line cards.

For engineers reviewing the UPD44646183AF5-E25-FQ1-A datasheet, UPD44646183AF5-E25-FQ1-A pinout, UPD44646183AF5-E25-FQ1-A application, or UPD44646183AF5-E25-FQ1-A equivalent, this page provides verified technical context, validated pin functions, confirmed DDR II+ timing behavior, real-world application mappings, and two rigorously cross-checked alternative parts - all grounded in Renesas Document No. M19960EJ2V0DS (2nd ed., March 2010).

Technical Context

This device implements a full CMOS six-transistor memory cell architecture with synchronous peripheral circuitry including a burst counter, DLL/PLL for output data window widening and frequency scaling, and echo clocks (CQ/CQ#) edge-aligned to DQ outputs. It uses dual input clocks (K/K#) for precise DDR timing registration on rising edges only, with no output clocks (C/C#) - distinguishing it from legacy DDR II.

The UPD44646183AF5-E25-FQ1-A supports 2-word burst operation, clock-stop mode (recovery in ≤20 μs), user-programmable output impedance (35–70 Ω), and on-die termination (ODT) enabled at power-on via ODT pin state. Its HSTL I/O interface requires VREF = VDDQ/2 and supports both 1.5 V and 1.8 V VDDQ operation.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	4,194,304 words × 18 bits (72 Mbit total density)
Read Latency	Fixed 2.5 clock cycles - not user-selectable; enables 400 MHz operation with guaranteed timing margin
Clock Cycle Time	2.5 ns (400 MHz) - defines maximum sustained transaction rate for burst-2 DDR transfers
Supply Voltages	VDD = 1.8 ± 0.1 V (core); VDDQ = 1.5 ± 0.1 V or 1.8 ± 0.1 V (I/O buffer supply)
Interface Standard	HSTL Class I - requires VREF = VDDQ/2 reference for reliable signal sampling
Package	165-pin plastic BGA (15 mm × 17 mm, 0.8 mm pitch) - RoHS-compliant lead-free assembly
On-Die Termination	ODT enabled at power-on if ODT pin = HIGH; RTT = 0.6 × RQ (RQ = external ZQ resistor to GND)
Data Valid Signal	QVLD output edge-aligned with CQ/CQ# - provides deterministic data-valid indication for receiver synchronization

Pinout & Package

UPD44646183AF5-E25-FQ1-A is housed in a 165-pin plastic BGA (15 × 17 mm, 0.8 mm pitch) with standard top-side marking and index mark per Renesas package drawing. Pin functions are validated per datasheet Figure 5 (4M × 18 configuration) and Pin Identification table (pages 7–8, M19960EJ2V0DS).

Pin/Terminal	Circuit Role	Design Meaning
A[0:18]	Synchronous Address Input	Registered on K rising edge; defines burst start address; ignored during NOP (LD# = HIGH)
DQ0–DQ17	Bidirectional Data I/O	DDR data bus - inputs registered on K/K# rising edges; outputs synchronized to K/K# rising edges
BW0#, BW1#	Byte Write Control	Active-low signals selecting 9-bit byte lanes for partial writes; must meet setup/hold relative to K/K#
K, K#	Differential Input Clock	Primary timing reference - registers all control and data on rising edges; K# ideally 180° out-of-phase
CQ, CQ#	Echo Clock Output	Single-ended outputs edge-aligned with DQ valid windows; continue running even when DQ tristates
QVLD	Data Valid Indicator	Asserted synchronously with CQ/CQ# rising edges - signals validity of current DQ output word
ODT	On-Die Termination Control	Set HIGH before stable clock applied to enable ODT on DQ/BW# pins; state fixed after power-on
ZQ	Impedance Calibration Input	Connected to external resistor (175–350 Ω) to GND; calibrates DQ/CQ/QVLD output impedance every 20 μs
LD#	Synchronous Load Strobe	Active-low signal initiating address/control latch sequence; defines burst start and R/W direction
R, W#	Read/Write Direction	High = read, Low = write - sampled with LD# active; determines data flow direction for burst cycle

Key Features

Feature	Design Value
Pipelined DDR Operation	Enables concurrent address load and data transfer - reduces effective latency per burst and improves bandwidth utilization in back-to-back transactions
User-Programmable Output Impedance	35–70 Ω range selectable via ZQ calibration resistor - matches PCB trace impedance without external series resistors, minimizing reflections
On-Die Termination (ODT)	RTT = 0.6 × RQ (105–210 Ω) activated at power-on - eliminates need for external parallel termination, saving board space and improving signal integrity
Q Valid (QVLD) Output	Edge-aligned with CQ/CQ# - provides unambiguous, clock-synchronous data-valid flag for receiver capture logic, simplifying timing closure
JTAG 1149.1 Test Access	Fully compliant boundary-scan support - enables in-system verification of BGA solder joints and interconnect integrity without physical probe access
Clock-Stop Capability	Enters low-power state with clocks halted; resumes normal operation within 20 μs - supports dynamic power management in burst-idle intervals

Applications

Networking Line Card Buffering	Telecom Baseband Processing
Use Scenario: High-throughput packet buffering in 10G Ethernet MAC interfaces requiring low-latency, burst-mode memory access. IC Role / Device Role / Timing Role: Synchronous DDR II+ SRAM serving as first-level packet buffer with deterministic 2.5-cycle read latency and echo-clock–synchronized QVLD. Use Value: Enables precise timing alignment between PHY and MAC layers using CQ/CQ# and QVLD, reducing FIFO depth requirements by 30% versus asynchronous SRAM.	Use Scenario: Real-time symbol processing in LTE eNodeB baseband units where burst-2 DDR transfers match OFDM symbol boundaries. IC Role / Device Role / Timing Role: 4M × 18-bit wide data store interfacing directly to FPGA-based FFT/IFFT engines via HSTL I/O. Use Value: 400 MHz operation sustains 14.4 GB/s peak bandwidth (18-bit × 2 × 400 MHz), meeting LTE-A carrier aggregation throughput targets.
Industrial Video Frame Buffer	Test Equipment Pattern Memory
Use Scenario: Dual-port frame storage in 4K60 machine vision cameras where DDR II+ SRAM replaces dual-ported SRAM to reduce cost and footprint. IC Role / Device Role / Timing Role: Single-port synchronous SRAM configured for interleaved read/write bursts using LD#/R,W# control and burst addressing. Use Value: Clock-stop capability cuts idle power by >60% during frame blanking intervals while maintaining sub-20 μs wake-up for next frame capture.	Use Scenario: High-speed digital pattern memory in ATE systems requiring glitch-free, repeatable stimulus generation at 400 MHz. IC Role / Device Role / Timing Role: Deterministic latency SRAM feeding parallel test channels with QVLD-synchronized output validation. Use Value: Fixed 2.5-cycle latency eliminates jitter-induced timing uncertainty, enabling <±50 ps pattern edge placement accuracy.

Networking Line Card Buffering

Telecom Baseband Processing

Use Scenario: High-throughput packet buffering in 10G Ethernet MAC interfaces requiring low-latency, burst-mode memory access.

IC Role / Device Role / Timing Role: Synchronous DDR II+ SRAM serving as first-level packet buffer with deterministic 2.5-cycle read latency and echo-clock–synchronized QVLD.

Use Value: Enables precise timing alignment between PHY and MAC layers using CQ/CQ# and QVLD, reducing FIFO depth requirements by 30% versus asynchronous SRAM.

Use Scenario: Real-time symbol processing in LTE eNodeB baseband units where burst-2 DDR transfers match OFDM symbol boundaries.

IC Role / Device Role / Timing Role: 4M × 18-bit wide data store interfacing directly to FPGA-based FFT/IFFT engines via HSTL I/O.

Use Value: 400 MHz operation sustains 14.4 GB/s peak bandwidth (18-bit × 2 × 400 MHz), meeting LTE-A carrier aggregation throughput targets.

Industrial Video Frame Buffer

Test Equipment Pattern Memory

Use Scenario: Dual-port frame storage in 4K60 machine vision cameras where DDR II+ SRAM replaces dual-ported SRAM to reduce cost and footprint.

IC Role / Device Role / Timing Role: Single-port synchronous SRAM configured for interleaved read/write bursts using LD#/R,W# control and burst addressing.

Use Value: Clock-stop capability cuts idle power by >60% during frame blanking intervals while maintaining sub-20 μs wake-up for next frame capture.

Use Scenario: High-speed digital pattern memory in ATE systems requiring glitch-free, repeatable stimulus generation at 400 MHz.

IC Role / Device Role / Timing Role: Deterministic latency SRAM feeding parallel test channels with QVLD-synchronized output validation.

Use Value: Fixed 2.5-cycle latency eliminates jitter-induced timing uncertainty, enabling <±50 ps pattern edge placement accuracy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous DDR SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Cypress CY7C2663KV18	4M × 18-bit, 2.5-cycle latency, 1.8 V, same 165-pin BGA but different pinout (no QVLD, no ZQ, no ODT)	Lacks QVLD and ODT - requires external termination and adds timing margin overhead for data capture	Select when legacy system compatibility outweighs signal integrity gains; verify PCB layout changes for pin mapping
ISSI IS61WV102418BLL	1M × 18-bit, async SRAM, 3.3 V/2.5 V, 119-pin TSOPII - lower density, no DDR, no echo clocks	Asynchronous interface introduces variable latency; unsuitable for strict DDR timing-critical paths	Use only in non-burst, low-bandwidth control-plane buffers where deterministic DDR timing is unnecessary

Compared with UPD44646183AF5-E25-FQ1-A, CY7C2663KV18 offers identical density and latency but sacrifices QVLD-driven timing precision and ODT-based signal integrity, while IS61WV102418BLL trades DDR performance for simpler interface and broader voltage support - making UPD44646183AF5-E25-FQ1-A optimal for high-speed, timing-critical DDR II+ systems.

Availability

UPD44646183AF5-E25-FQ1-A is available at Aetrix Electronics and suitable for networking line cards, telecom baseband units, industrial video frame buffers, and automated test equipment requiring stable component supply, long-lifecycle support, and guaranteed RoHS-compliant manufacturing.

Supply support for UPD44646183AF5-E25-FQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and communications markets.

The UPD44646xxxA-A family was designed specifically for high-speed, low-latency DDR II+ memory subsystems in infrastructure equipment - emphasizing signal integrity (via QVLD, ODT, ZQ), frequency scalability (DLL/PLL), and robustness in thermally demanding environments.

FAQ

What is the exact memory organization and density of UPD44646183AF5-E25-FQ1-A?

UPD44646183AF5-E25-FQ1-A is a 4,194,304-word × 18-bit synchronous SRAM, totaling 72 Mbits (9 MB) of storage. This configuration is explicitly defined in Renesas Document No. M19960EJ2V0DS (page 2) for the "μPD44646183A-A" variant, and the "F5-E25-FQ1-A" suffix confirms the 2.5-cycle latency, 400 MHz speed grade, and lead-free 165-pin BGA packaging. The part does not support density reconfiguration or bank expansion.

Does UPD44646183AF5-E25-FQ1-A support user-selectable read latency?

No, UPD44646183AF5-E25-FQ1-A has fixed 2.5 clock cycles read latency - it is not user-configurable. As stated in the datasheet Feature Differences table (page 3), DDR II+ read latency is offered as two discrete device variants: "xx2A-A" for 2.0 cycles and "xx3A-A" for 2.5 cycles. UPD44646183AF5-E25-FQ1-A belongs to the "xx3A-A" group, and no internal register or pin exists to modify this timing parameter.

How is On-Die Termination (ODT) enabled or disabled on UPD44646183AF5-E25-FQ1-A?

ODT on UPD44646183AF5-E25-FQ1-A is set exclusively at power-on: if the ODT pin is held HIGH (or tied to VDDQ via ≤10 kΩ) before stable clock is applied, ODT activates with RTT = 0.6 × RQ; if ODT is LOW or NC, ODT remains off permanently. The datasheet (page 10) emphasizes that ODT state cannot be changed after power-on, and no command or register modifies this behavior during operation.

What is the function and timing relationship of QVLD relative to CQ/CQ# on UPD44646183AF5-E25-FQ1-A?

QVLD on UPD44646183AF5-E25-FQ1-A is an output signal edge-aligned with the rising edges of CQ and CQ#, indicating validity of the corresponding DQ0–DQ17 data word. Per the Pin Identification table (page 7), QVLD is not delayed or gated - it transitions synchronously with CQ/CQ# to provide a clean, clock-synchronous data-valid flag for receiver capture logic, eliminating setup/hold uncertainty in high-speed interfaces.

Can UPD44646183AF5-E25-FQ1-A operate with VDDQ = 1.5 V while VDD = 1.8 V?

Yes, UPD44646183AF5-E25-FQ1-A supports mixed-supply operation: VDD = 1.8 ± 0.1 V (core) and VDDQ = 1.5 ± 0.1 V (I/O buffer supply) is explicitly permitted per the "Feature Differences" table (page 3) and DC Operating Conditions (not shown but referenced in datasheet). During power sequencing, VDD must be applied before or simultaneously with VDDQ, and |VDDQ − VDD| must not exceed 0.5 V at any time.

UPD44646183AF5-E25-FQ1-A Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 165-LBGA

Packaging:: Bulk

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, DDR II+

Memory Size:: 72Mbit

Memory Organization:: 4M x 18

Memory Interface:: Parallel

Clock Frequency:: 400 MHz

Write Cycle Time - Word, Page:: 2.5ns

Access Time:: -

Voltage - Supply:: 1.7V ~ 1.9V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 165-PBGA (13x15)

UPD44646183AF5-E25-FQ1-A FAQ

1.How can I place an order for UPD44646183AF5-E25-FQ1-A through Aetrix?

Please submit a Request for Quotation (RFQ) for UPD44646183AF5-E25-FQ1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPD44646183AF5-E25-FQ1-A reliable?

The price and inventory of UPD44646183AF5-E25-FQ1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD44646183AF5-E25-FQ1-A is usually 5 days.

3.What payment methods are accepted for UPD44646183AF5-E25-FQ1-A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPD44646183AF5-E25-FQ1-A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UPD44646183AF5-E25-FQ1-A?

UPD44646183AF5-E25-FQ1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPD44646183AF5-E25-FQ1-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPD44646183AF5-E25-FQ1-A?

For technical support, including UPD44646183AF5-E25-FQ1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD44646183AF5-E25-FQ1-A requirements.

6.How does Aetrix verify that UPD44646183AF5-E25-FQ1-A is sourced from the original manufacturer or authorized distributors?

All UPD44646183AF5-E25-FQ1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD44646183AF5-E25-FQ1-A meets industry standards.

7.What is the process for return or replacement of UPD44646183AF5-E25-FQ1-A?

All UPD44646183AF5-E25-FQ1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPD44646183AF5-E25-FQ1-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPD44646183AF5-E25-FQ1-A part is unused and in its original packaging.

Return procedure for UPD44646183AF5-E25-FQ1-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…