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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas UPD44646363AF5-E25-FQ1

Name: UPD44646363AF5-E25-FQ1
Brand: Renesas
SKU: UPD44646363AF5-E25-FQ1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: UPD44646363AF5-E25-FQ1

Manufacturer:: Renesas

Category:: Memory

Package:: 165-LBGA

Datasheet:: UPD44646363AF5-E25-FQ1.pdf

Description:: IC SRAM 72MBIT PARALLEL 165PBGA

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Product details

Overview

UPD44646363AF5-E25-FQ1 from Renesas Electronics is a 2,097,152-word × 36-bit synchronous double data rate (DDR II+) SRAM with 2.5 clock cycle read latency, HSTL interface, and 165-pin plastic BGA (15 × 17 mm) packaging. It operates at 1.8 V core supply, supports 400 MHz clock frequency (2.5 ns cycle time), and integrates DLL/PLL, on-die termination (ODT), and QVLD for high-speed memory subsystems in networking and test equipment.

For engineers reviewing the UPD44646363AF5-E25-FQ1 datasheet, UPD44646363AF5-E25-FQ1 pinout, UPD44646363AF5-E25-FQ1 application, or UPD44646363AF5-E25-FQ1 equivalent, this page delivers verified technical context, exact pin functions, DDR II+ burst timing behavior, ODT configuration constraints, and validated alternatives for memory subsystem design and replacement planning.

Technical Context

This DDR II+ SRAM implements pipelined double data rate operation using dual input clocks (K/K#) and echo clocks (CQ/CQ#), with all inputs registered on K's rising edge and data sampled on both K and K# rising edges. Its 2.5-cycle read latency is fixed-not user-selectable-and synchronized to K#(t+2)/K(t+3) for output delivery.

The device integrates on-die termination (ODT) controlled by the ODT pin at power-on, with RTT = 0.6 × RQ (RQ = 175–350 Ω), and uses ZQ for impedance calibration. DLL# must be held HIGH for guaranteed AC/DC performance above 190 MHz; DLL/PLL lock requires ≥20 μs of stable clock after power-up.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	2,097,152 words × 36 bits (72 M-bit total density)
Read Latency	Fixed 2.5 clock cycles - output valid at K#(t+2) and K(t+3); not configurable
Max Clock Frequency	400 MHz (2.5 ns cycle time) - requires DLL/PLL enabled and stable K/K#
Supply Voltages	VDD = 1.8 ± 0.1 V (core); VDDQ = 1.5 ± 0.1 V or 1.8 ± 0.1 V (I/O buffer)
Interface Standard	HSTL Class I - requires VREF = VDDQ/2; supports 1.8 V I/O level JTAG
On-Die Termination	ODT enabled at power-on if ODT pin = HIGH; RTT = 105–210 Ω (0.6 × RQ)
Package	165-pin plastic BGA (15 mm × 17 mm, 0.8 mm pitch) - lead-free, RoHS compliant

Pinout & Package

UPD44646363AF5-E25-FQ1 is housed in a 165-pin plastic BGA (15 × 17 mm, 0.8 mm pitch) with standard thermal and mechanical characteristics for high-density PCB layouts. Pin functions are defined per the μPD44646363A-A datasheet revision, with full compatibility across the 44646xxx family's x36 variant.

Pin/Terminal	Circuit Role	Design Meaning
A[0:19]	Synchronous Address Input	20-bit address bus registered on K rising edge; burst length fixed at 2 words
DQ[0:35]	Synchronous Data I/O	36-bit bidirectional bus - data registered on K/K# rising edges; tristated during NOP/clock stop
K, K#	Differential Input Clock	Primary timing reference - registers all control and data; 180° phase alignment required for jitter control
CQ, CQ#	Echo Clock Output	Edge-aligned with DQ outputs; provides system-level data valid timing; continues running during DQ tristate
QVLD	Data Valid Indicator	Asserted edge-aligned with CQ/CQ#; signals validity of current DQ output word
ODT	On-Die Termination Control	Static enable at power-on only - HIGH enables 105–210 Ω termination on DQ/BW# pins
ZQ	Impedance Calibration Reference	Connect external 175–350 Ω resistor to VSS; sets DQ/CQ/QVLD output drive strength
LD#, R,W#, BW0#–BW3#	Control Inputs	LD# latches address/control; R,W# selects READ/HIGH or WRITE/LOW; BWx# enables byte-write masking

Key Features

Feature	Design Value
2-Word Burst Operation	Fixed linear burst of two consecutive words per transaction - reduces command overhead and simplifies controller logic
User-Programmable Output Impedance	35–70 Ω drive strength via ZQ resistor tuning - enables precise signal integrity matching to 50 Ω or 60 Ω PCB traces
Integrated DLL/PLL	Wide output data valid window across 300–500 MHz - eliminates external delay compensation and supports future frequency scaling
On-Die Termination (ODT)	Configurable 105–210 Ω termination on DQ/BW# pins - eliminates external resistors and improves signal fidelity in point-to-point DDR links
JTAG 1149.1 Test Access	Full boundary-scan support with TDI/TDO/TCK/TMS - enables in-system verification and production test without physical probe access

Applications

High-Speed Packet Buffering	Automated Test Equipment (ATE) Memory
Use Scenario: Storing and forwarding variable-length Ethernet frames in Layer 2 switches with sub-10 ns latency requirements. IC Role / Device Role / Timing Role: Primary packet buffer SRAM - accepts back-to-back writes at 400 MHz and delivers burst reads with deterministic 2.5-cycle latency. Use Value: Eliminates external termination components via ODT and ensures clean data capture using CQ/CQ# echo clocks aligned to DQ edges.	Use Scenario: Capturing high-fidelity digital stimulus/response vectors during IC functional testing at 400 MHz sampling rates. IC Role / Device Role / Timing Role: Synchronous capture memory - interfaces directly to ATE pattern generators using HSTL signaling and burst-aligned addressing. Use Value: Enables precise timing correlation between stimulus and response via QVLD-synchronized read validation and DLL-stabilized clock domain.
Optical Transport Network (OTN) Framing	Real-Time Signal Processing Buffer
Use Scenario: Holding OTU2/OTU3 frame payloads during multiplexing/demultiplexing in telecom line cards. IC Role / Device Role / Timing Role: High-density, low-latency frame buffer - supports 72 M-bit capacity with burst-2 access to minimize header processing overhead. Use Value: Delivers deterministic 2.5-cycle read latency and clock-stop capability (20 μs recovery) for seamless traffic interruption handling.	Use Scenario: Acting as ping-pong buffer for FPGA-based FFT engines processing radar or ultrasound data streams. IC Role / Device Role / Timing Role: Dual-port-capable SRAM - leverages common DQ bus and independent LD#/R,W# control for interleaved write/read operations. Use Value: Reduces FPGA pin count and routing complexity via HSTL interface and integrated impedance matching (ZQ + ODT).

High-Speed Packet Buffering

Automated Test Equipment (ATE) Memory

Use Scenario: Storing and forwarding variable-length Ethernet frames in Layer 2 switches with sub-10 ns latency requirements.

IC Role / Device Role / Timing Role: Primary packet buffer SRAM - accepts back-to-back writes at 400 MHz and delivers burst reads with deterministic 2.5-cycle latency.

Use Value: Eliminates external termination components via ODT and ensures clean data capture using CQ/CQ# echo clocks aligned to DQ edges.

Use Scenario: Capturing high-fidelity digital stimulus/response vectors during IC functional testing at 400 MHz sampling rates.

IC Role / Device Role / Timing Role: Synchronous capture memory - interfaces directly to ATE pattern generators using HSTL signaling and burst-aligned addressing.

Use Value: Enables precise timing correlation between stimulus and response via QVLD-synchronized read validation and DLL-stabilized clock domain.

Optical Transport Network (OTN) Framing

Real-Time Signal Processing Buffer

Use Scenario: Holding OTU2/OTU3 frame payloads during multiplexing/demultiplexing in telecom line cards.

IC Role / Device Role / Timing Role: High-density, low-latency frame buffer - supports 72 M-bit capacity with burst-2 access to minimize header processing overhead.

Use Value: Delivers deterministic 2.5-cycle read latency and clock-stop capability (20 μs recovery) for seamless traffic interruption handling.

Use Scenario: Acting as ping-pong buffer for FPGA-based FFT engines processing radar or ultrasound data streams.

IC Role / Device Role / Timing Role: Dual-port-capable SRAM - leverages common DQ bus and independent LD#/R,W# control for interleaved write/read operations.

Use Value: Reduces FPGA pin count and routing complexity via HSTL interface and integrated impedance matching (ZQ + ODT).

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous DDR SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Cypress CY7C2663KV18	2M × 36, 2.5-cycle latency, 400 MHz, 1.8 V, but uses SSTL-18 interface and lacks QVLD output	Requires external termination and separate data-valid logic; less suitable for echo-clock–based timing systems	Select when SSTL-18 ecosystem exists and QVLD is not required for data capture synchronization
ISSI IS61WV102436B	1M × 36, asynchronous interface, 15 ns access, no DLL/PLL, no ODT, 3.3 V core	Lower density, no DDR timing, incompatible voltage and signaling - not drop-in replaceable	Consider only for legacy non-DDR designs where latency tolerance >15 ns and clock frequency <100 MHz

Compared with UPD44646363AF5-E25-FQ1, CY7C2663KV18 offers identical density and latency but demands external signal integrity management, while IS61WV102436B lacks DDR functionality entirely - making UPD44646363AF5-E25-FQ1 uniquely suited for high-speed, echo-clock–synchronized, ODT-enabled DDR II+ systems.

Availability

UPD44646363AF5-E25-FQ1 is available at Aetrix Electronics and suitable for high-speed packet buffering, automated test equipment (ATE) memory, and optical transport network (OTN) framing requiring stable component supply, long-lifecycle support, and RoHS-compliant BGA packaging.

Supply support for UPD44646363AF5-E25-FQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

UPD44646363AF5-E25-FQ1 belongs to the μPD44646xxx DDR II+ SRAM product line, designed specifically for high-bandwidth, low-latency synchronous memory applications in networking infrastructure and precision test systems.

FAQ

What is the exact read latency behavior of UPD44646363AF5-E25-FQ1?

UPD44646363AF5-E25-FQ1 has a fixed 2.5 clock cycle read latency - output data QA(A+0) is valid at the rising edge of CQ# at t+2, and QA(A+1) at the rising edge of CQ at t+3. This timing is hardwired and cannot be altered via mode registers or control pins. The UPD44646363AF5-E25-FQ1 datasheet specifies that latency is not user-selectable and differs from 2.0-cycle variants like UPD44646362AF5-E25-FQ1.

Does UPD44646363AF5-E25-FQ1 support on-die termination (ODT), and how is it configured?

Yes, UPD44646363AF5-E25-FQ1 supports ODT, enabled only at power-on when the ODT pin is held HIGH. Once initialized, ODT state cannot be changed dynamically. With ODT active, DQ[0:35] and BW0#–BW3# pins present 105–210 Ω termination to VDDQ/VSS, set by the external resistor on ZQ (175–350 Ω to ground). UPD44646363AF5-E25-FQ1 requires this configuration to be established before stable clock application.

Can UPD44646363AF5-E25-FQ1 operate with a 1.5 V VDDQ supply?

Yes, UPD44646363AF5-E25-FQ1 supports VDDQ = 1.5 ± 0.1 V or 1.8 ± 0.1 V, while VDD remains fixed at 1.8 ± 0.1 V. The HSTL interface is compatible with either VDDQ level, provided VREF is set to VDDQ/2. During power sequencing, VDD must be applied before or simultaneously with VDDQ, and VDDQ must not exceed VDD by more than 0.5 V - a requirement explicitly defined for UPD44646363AF5-E25-FQ1 in the Renesas datasheet.

What is the role of the QVLD pin on UPD44646363AF5-E25-FQ1, and how does it relate to CQ/CQ#?

The QVLD pin on UPD44646363AF5-E25-FQ1 is an edge-aligned data valid indicator that asserts synchronously with the rising edges of CQ and CQ#. It signals when DQ[0:35] output data is stable and ready for capture by the receiving logic. Unlike asynchronous ready signals, QVLD is fully synchronous to the echo clock domain - a key timing feature confirmed in the UPD44646363AF5-E25-FQ1 pin identification table and truth table.

Is UPD44646363AF5-E25-FQ1 pin-compatible with other devices in the μPD44646xxx family?

UPD44646363AF5-E25-FQ1 shares the same 165-pin plastic BGA package and pinout with all μPD4464636xA-A variants (e.g., UPD44646362AF5-E25-FQ1), including identical placement of A[0:19], DQ[0:35], K/K#, CQ/CQ#, QVLD, ODT, and ZQ. However, it is not pin-compatible with x9 or x18 variants (e.g., UPD44646093AF5-E25-FQ1) due to differing DQ and BW# pin allocations - a distinction clearly shown in the three separate pin configuration diagrams for UPD44646363AF5-E25-FQ1.

UPD44646363AF5-E25-FQ1 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 165-LBGA

Packaging:: Bulk

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, DDR II+

Memory Size:: 72Mbit

Memory Organization:: 2M x 36

Memory Interface:: Parallel

Clock Frequency:: 400 MHz

Write Cycle Time - Word, Page:: 2.5ns

Access Time:: -

Voltage - Supply:: 1.7V ~ 1.9V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 165-PBGA (13x15)

UPD44646363AF5-E25-FQ1 FAQ

1.How can I place an order for UPD44646363AF5-E25-FQ1 through Aetrix?

Please submit a Request for Quotation (RFQ) for UPD44646363AF5-E25-FQ1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPD44646363AF5-E25-FQ1 reliable?

The price and inventory of UPD44646363AF5-E25-FQ1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD44646363AF5-E25-FQ1 is usually 5 days.

3.What payment methods are accepted for UPD44646363AF5-E25-FQ1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPD44646363AF5-E25-FQ1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UPD44646363AF5-E25-FQ1?

UPD44646363AF5-E25-FQ1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPD44646363AF5-E25-FQ1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPD44646363AF5-E25-FQ1?

For technical support, including UPD44646363AF5-E25-FQ1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD44646363AF5-E25-FQ1 requirements.

6.How does Aetrix verify that UPD44646363AF5-E25-FQ1 is sourced from the original manufacturer or authorized distributors?

All UPD44646363AF5-E25-FQ1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD44646363AF5-E25-FQ1 meets industry standards.

7.What is the process for return or replacement of UPD44646363AF5-E25-FQ1?

All UPD44646363AF5-E25-FQ1 units undergo pre-shipment inspection (PSI). If there is an issue with UPD44646363AF5-E25-FQ1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPD44646363AF5-E25-FQ1 part is unused and in its original packaging.

Return procedure for UPD44646363AF5-E25-FQ1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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