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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas UPD44646363AF5-E25-FQ1-A

Name: UPD44646363AF5-E25-FQ1-A
Brand: Renesas
SKU: UPD44646363AF5-E25-FQ1-A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: UPD44646363AF5-E25-FQ1-A

Manufacturer:: Renesas

Category:: Memory

Package:: 165-LBGA

Datasheet:: UPD44646363AF5-E25-FQ1-A.pdf

Description:: IC SRAM 72MBIT PARALLEL 165PBGA

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Product details

Overview

UPD44646363AF5-E25-FQ1-A from Renesas Electronics is a 2,097,152-word × 36-bit synchronous double data rate (DDR II+) SRAM with 2.5 clock cycles read latency, 1.8 V core supply, HSTL interface, and 165-pin plastic BGA (15 × 17) packaging. It delivers 400 MHz operation (2.5 ns cycle time), on-die termination (ODT), QVLD data validity signaling, and JTAG 1149.1 test access - deployed in high-speed networking line cards requiring burst-aligned, low-latency memory buffering.

For engineers reviewing the UPD44646363AF5-E25-FQ1-A datasheet, UPD44646363AF5-E25-FQ1-A pinout, UPD44646363AF5-E25-FQ1-A application, or UPD44646363AF5-E25-FQ1-A equivalent, key selection criteria include confirmed 2.5-cycle read latency timing, HSTL I/O compatibility, ODT enable/disable behavior at power-on, and 165-pin BGA mechanical alignment with echo clock (CQ/CQ#) and ZQ impedance calibration support.

Technical Context

This DDR II+ SRAM implements pipelined double data rate operation using dual input clocks (K/K#) for precise edge-aligned registration of address, control, and data. Its DLL/PLL circuitry enables stable 400 MHz operation with wide output data valid window and supports clock-stop mode with 20 μs recovery.

The device integrates synchronous burst counter logic, common data I/O bus, and user-programmable output impedance (35–70 Ω). It features dedicated echo clocks (CQ/CQ#) edge-aligned to DQ outputs, QVLD assertion synchronized to CQ/CQ#, and ODT activation controlled by the ODT pin at power-on - with RTT = 0.6 × RQ (RQ = 175–350 Ω).

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	2,097,152 words × 36 bits (72 Mbit total)
Read Latency	Fixed 2.5 clock cycles - not user-selectable; dictates minimum K-clock delay between LD# assertion and first valid DQ output
Clock Frequency	400 MHz (2.5 ns cycle time) - maximum guaranteed speed for 2.5-cycle latency variant
Supply Voltages	VDD = 1.8 ± 0.1 V (core); VDDQ = 1.5 or 1.8 V (I/O buffer supply)
I/O Interface	HSTL Class I - requires VREF = VDDQ/2 reference; supports 1.8 V signaling level
Package	165-pin plastic BGA (15 mm × 17 mm, 1.0 mm pitch) - RoHS-compliant lead-free
On-Die Termination	ODT enabled via HIGH ODT pin at power-on; RTT = 0.6 × RQ (105–210 Ω range)
Data Valid Signal	QVLD output edge-aligned with CQ/CQ# - provides unambiguous indication of valid DQ data

Pinout & Package

UPD44646363AF5-E25-FQ1-A is housed in a 165-pin plastic BGA (15 × 17 mm, 1.0 mm pitch) with standard top-side marking and index corner. Pin assignment follows the x36 organization layout shown in the datasheet for μPD44646362A-A/μPD44646363A-A.

Pin/Terminal	Circuit Role	Design Meaning
A[0:19]	Input	20-bit synchronous address bus - registered on rising edge of K; burst address A+0/A+1 generated internally
DQ[0:35]	Input/Output	36-bit bidirectional data bus - registered on rising edges of both K and K#; supports 2-word burst
K, K#	Input	Differential input clock pair - registers all inputs on K rising edge; K# phase-matched for data sampling
CQ, CQ#	Output	Echo clocks - rising edges tightly aligned to DQ output transitions; used for data capture timing
QVLD	Output	Data validity flag - asserted edge-aligned with CQ/CQ#; indicates DQ[0:35] contains valid read data
ODT	Input	On-die termination control - HIGH at power-on enables 105–210 Ω termination on DQ and BW# pins
ZQ	Input	Impedance calibration reference - connected to external resistor (175–350 Ω) to ground for RTT tuning
LD#	Input	Synchronous load strobe - LOW initiates address/control latch and defines burst transaction start
R, W#	Input	Read/write direction - HIGH = read, LOW = write; sampled with LD# on K rising edge
BW0#–BW3#	Input	Byte write enables - four active-low signals controlling 8-bit segments of 36-bit DQ bus during writes

Key Features

Feature	Design Value
Pipelined DDR operation	Enables 400 MHz throughput with deterministic 2.5-cycle read latency and no external FIFO required
User-programmable output impedance	35–70 Ω range selectable via ZQ resistor - matches PCB trace impedance without external resistors
On-die termination (ODT)	Configurable 105–210 Ω termination on DQ/BW# pins - eliminates stub reflections in point-to-point DDR buses
QVLD + echo clock synchronization	QVLD edge-aligned to CQ/CQ# provides unambiguous, jitter-tolerant data valid window for receiver setup/hold
JTAG 1149.1 test access	Full boundary-scan support (TMS/TCK/TDI/TDO) - enables in-system verification of BGA solder joints and interconnects
Clock-stop capability	Enters low-power state with zero current draw on DQ/CQ; resumes full operation within 20 μs of K/K# restart

Applications

High-Speed Packet Buffering	Telecom Line Card Memory
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches with strict latency budgets. IC Role / Device Role / Timing Role: Acts as burst-aligned, low-latency shared memory buffer between ingress/egress MACs and traffic manager ASICs. Use Value: 2.5-cycle read latency and QVLD timing enable sub-10 ns data handoff; HSTL interface ensures signal integrity at 400 MHz.	Use Scenario: Providing frame-level buffering in OC-192/STM-64 SONET/SDH line interface modules. IC Role / Device Role / Timing Role: Serves as synchronous DDR II+ SRAM for ATM cell reassembly and pointer processing engines. Use Value: 72 Mbit density and 36-bit bus width reduce chip count vs. x9/x18 alternatives; ODT simplifies board-level termination design.
Network Processor Co-Processor	Test Equipment Pattern Memory
Use Scenario: Offloading packet classification and deep packet inspection tasks from main NPU cores. IC Role / Device Role / Timing Role: Functions as high-bandwidth, low-latency scratchpad memory for microcode-driven pattern matching engines. Use Value: Pipelined DDR architecture sustains 400 MHz sustained bandwidth; clock-stop mode enables dynamic power gating during idle cycles.	Use Scenario: Storing stimulus/response vectors in automated test equipment (ATE) for high-speed digital IC validation. IC Role / Device Role / Timing Role: Provides deterministic, jitter-immune memory access for pattern generators operating at >300 MHz. Use Value: Echo clocks (CQ/CQ#) and QVLD eliminate timing uncertainty in vector launch/capture; JTAG enables in-system memory test.

High-Speed Packet Buffering

Telecom Line Card Memory

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches with strict latency budgets.

IC Role / Device Role / Timing Role: Acts as burst-aligned, low-latency shared memory buffer between ingress/egress MACs and traffic manager ASICs.

Use Value: 2.5-cycle read latency and QVLD timing enable sub-10 ns data handoff; HSTL interface ensures signal integrity at 400 MHz.

Use Scenario: Providing frame-level buffering in OC-192/STM-64 SONET/SDH line interface modules.

IC Role / Device Role / Timing Role: Serves as synchronous DDR II+ SRAM for ATM cell reassembly and pointer processing engines.

Use Value: 72 Mbit density and 36-bit bus width reduce chip count vs. x9/x18 alternatives; ODT simplifies board-level termination design.

Network Processor Co-Processor

Test Equipment Pattern Memory

Use Scenario: Offloading packet classification and deep packet inspection tasks from main NPU cores.

IC Role / Device Role / Timing Role: Functions as high-bandwidth, low-latency scratchpad memory for microcode-driven pattern matching engines.

Use Value: Pipelined DDR architecture sustains 400 MHz sustained bandwidth; clock-stop mode enables dynamic power gating during idle cycles.

Use Scenario: Storing stimulus/response vectors in automated test equipment (ATE) for high-speed digital IC validation.

IC Role / Device Role / Timing Role: Provides deterministic, jitter-immune memory access for pattern generators operating at >300 MHz.

Use Value: Echo clocks (CQ/CQ#) and QVLD eliminate timing uncertainty in vector launch/capture; JTAG enables in-system memory test.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous DDR SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1551KV18-250BZXC	2.5-cycle latency x18 DDR II+ SRAM (4M × 18), 250 MHz max, 165-pin FBGA - lacks QVLD and ODT	Lower density and narrower bus require parallel stacking for equivalent capacity; no on-die termination	Select when system uses external termination and lower bandwidth suffices; verify echo clock absence does not impact timing margin
AS7C362000B-25PCN	2.5-cycle latency x36 DDR II+ SRAM (2M × 36), 250 MHz max, 165-pin BGA - no DLL/PLL, no JTAG, no ZQ calibration	Reduced frequency headroom limits use in 400 MHz designs; missing impedance tuning increases layout sensitivity	Choose only for cost-sensitive, non-critical applications where 250 MHz operation and manual termination are acceptable

Compared with CY7C1551KV18-250BZXC and AS7C362000B-25PCN, UPD44646363AF5-E25-FQ1-A uniquely combines 400 MHz operation, QVLD timing assurance, programmable ODT, and JTAG testability - making it optimal for high-reliability, high-speed infrastructure designs where signal integrity and debug visibility are mandatory.

Availability

UPD44646363AF5-E25-FQ1-A is available at Aetrix Electronics and suitable for high-speed networking equipment, telecom line cards, network processor subsystems, and automated test equipment requiring stable component supply and long-term obsolescence management.

Supply support for UPD44646363AF5-E25-FQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The UPD44646363AF5-E25-FQ1-A belongs to Renesas' DDR II+ SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in synchronous communication infrastructure where deterministic timing and signal integrity are critical.

FAQ

What is the exact read latency of UPD44646363AF5-E25-FQ1-A, and is it configurable?

The UPD44646363AF5-E25-FQ1-A has a fixed 2.5 clock cycles read latency - not user-selectable. This value is hardwired per device variant and confirmed in the ordering code suffix "-E25", which denotes 2.5 ns cycle time (400 MHz). The datasheet explicitly states DDR II+ read latency is offered as two discrete devices (2.0 or 2.5 cycles), with no internal register or pin to change it. UPD44646363AF5-E25-FQ1-A must be used in systems designed for this exact timing budget.

Does UPD44646363AF5-E25-FQ1-A support on-die termination (ODT), and how is it enabled?

Yes, UPD44646363AF5-E25-FQ1-A supports ODT. It is enabled by holding the ODT pin HIGH during power-on sequence - before applying stable clock. Once set, ODT state cannot be changed dynamically. With ODT enabled, DQ[0:35] and BW0#–BW3# pins present 105–210 Ω termination to VDDQ/VSS, calibrated via the ZQ pin's external resistor (175–350 Ω). UPD44646363AF5-E25-FQ1-A does not support runtime ODT toggling.

What is the function of the QVLD pin on UPD44646363AF5-E25-FQ1-A, and how does it relate to CQ/CQ#?

The QVLD pin on UPD44646363AF5-E25-FQ1-A is a data validity indicator that asserts synchronously with the rising edges of CQ and CQ#. It signals that DQ[0:35] outputs contain valid read data - eliminating need for complex strobe deskew or eye-diagram margining. Unlike generic ready/busy flags, QVLD is edge-aligned to echo clocks, providing precise, jitter-tolerant timing reference for receivers. UPD44646363AF5-E25-FQ1-A requires CQ/CQ# to be routed alongside DQ for correct QVLD interpretation.

Can UPD44646363AF5-E25-FQ1-A operate with VDDQ = 1.5 V while VDD = 1.8 V?

Yes, UPD44646363AF5-E25-FQ1-A supports VDDQ = 1.5 ± 0.1 V independently of VDD = 1.8 ± 0.1 V. The datasheet lists both 1.5 V and 1.8 V as permissible VDDQ levels. During power-up, VDD must be applied before or simultaneously with VDDQ, and |VDDQ − VDD| must not exceed 0.5 V at any time. This dual-voltage capability allows UPD44646363AF5-E25-FQ1-A to interface with 1.5 V HSTL receivers while maintaining 1.8 V core logic integrity.

Is JTAG boundary-scan supported on UPD44646363AF5-E25-FQ1-A, and what pins are involved?

Yes, UPD44646363AF5-E25-FQ1-A implements IEEE 1149.1 JTAG boundary-scan. Pins TDI, TDO, TCK, and TMS are dedicated for this function and operate at 1.8 V I/O level. TCK must be tied to VSS if JTAG is unused; TDI/TMS may be left unconnected. The JTAG port enables full boundary-scan testing of the 165-pin BGA interconnects - critical for verifying solder joint reliability in high-density telecom PCBs where UPD44646363AF5-E25-FQ1-A is commonly deployed.

UPD44646363AF5-E25-FQ1-A Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 165-LBGA

Packaging:: Bulk

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, DDR II+

Memory Size:: 72Mbit

Memory Organization:: 2M x 36

Memory Interface:: Parallel

Clock Frequency:: 400 MHz

Write Cycle Time - Word, Page:: 2.5ns

Access Time:: -

Voltage - Supply:: 1.7V ~ 1.9V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 165-PBGA (13x15)

UPD44646363AF5-E25-FQ1-A FAQ

1.How can I place an order for UPD44646363AF5-E25-FQ1-A through Aetrix?

Please submit a Request for Quotation (RFQ) for UPD44646363AF5-E25-FQ1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPD44646363AF5-E25-FQ1-A reliable?

The price and inventory of UPD44646363AF5-E25-FQ1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD44646363AF5-E25-FQ1-A is usually 5 days.

3.What payment methods are accepted for UPD44646363AF5-E25-FQ1-A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPD44646363AF5-E25-FQ1-A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UPD44646363AF5-E25-FQ1-A?

UPD44646363AF5-E25-FQ1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPD44646363AF5-E25-FQ1-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPD44646363AF5-E25-FQ1-A?

For technical support, including UPD44646363AF5-E25-FQ1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD44646363AF5-E25-FQ1-A requirements.

6.How does Aetrix verify that UPD44646363AF5-E25-FQ1-A is sourced from the original manufacturer or authorized distributors?

All UPD44646363AF5-E25-FQ1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD44646363AF5-E25-FQ1-A meets industry standards.

7.What is the process for return or replacement of UPD44646363AF5-E25-FQ1-A?

All UPD44646363AF5-E25-FQ1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPD44646363AF5-E25-FQ1-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPD44646363AF5-E25-FQ1-A part is unused and in its original packaging.

Return procedure for UPD44646363AF5-E25-FQ1-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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