Renesas UPD44647186AF5-E22-FQ1

Overview

UPD44647186AF5-E22-FQ1 from Renesas Electronics is a 2.5-clock-cycle read latency, 8,388,608-word × 9-bit synchronous DDR II+ SRAM operating at 450 MHz with 1.8 V core supply and HSTL I/O interface. It features pipelined double data rate operation, on-die termination (ODT), QVLD data validity signaling, and DLL/PLL-based timing control. This device serves as a high-speed, low-voltage buffer memory in network packet processors and FPGA co-processor subsystems requiring burst-2 synchronous access.

For engineers reviewing the UPD44647186AF5-E22-FQ1 datasheet, UPD44647186AF5-E22-FQ1 pinout, UPD44647186AF5-E22-FQ1 application, or UPD44647186AF5-E22-FQ1 equivalent, this page delivers verified specifications, validated 165-pin plastic BGA terminal mapping, confirmed DDR II+ timing behavior (2.5-cycle read latency, 450 MHz max frequency), ODT configuration constraints, and real-world use context for embedded high-throughput data path design.

Technical Context

This device implements a full CMOS six-transistor memory cell architecture with synchronous peripheral circuitry including a burst counter and dual-edge clocked input registers latched on K and K# rising edges. Its DLL/PLL circuit enables precise output data alignment to echo clocks CQ/CQ#, delivering a wide data valid window across 300–500 MHz operation.

The UPD44647186AF5-E22-FQ1 supports user-programmable output impedance (35–70 Ω), clock-stop mode with 20 μs recovery, and JTAG 1149.1 test access. All control inputs-including LD#, R/W#, and BW0#-are registered on the rising edge of K, and data I/O occurs on both K and K# rising edges in pipelined DDR fashion.

Key Specifications

Pinout & Package

UPD44647186AF5-E22-FQ1 is housed in a 165-pin plastic BGA (15 × 17 mm grid, 0.8 mm pitch), compatible with standard reflow profiles for lead-free assembly. The package supports thermal dissipation up to 1.2 W under continuous operation with appropriate PCB copper pour and via stitching.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous DDR SRAM applications.

Compared with CY7C2665KV18-450BZXC, UPD44647186AF5-E22-FQ1 offers narrower 9-bit bus and simpler address mapping but identical 450 MHz timing and ODT capability; versus IS42S16160J-45BLI, it provides guaranteed 2.5-cycle latency, QVLD signaling, and true DDR operation - critical for hard real-time control loops.

Availability

UPD44647186AF5-E22-FQ1 is available at Aetrix Electronics and suitable for network infrastructure, FPGA acceleration, broadcast video processing, and industrial motion control applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for UPD44647186AF5-E22-FQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The UPD44647186AF5-E22-FQ1 belongs to Renesas' DDR II+ SRAM product line, engineered for high-speed, low-latency synchronous buffering in deterministic real-time systems where jitter-free data delivery and signal integrity are critical.

FAQ

What is the exact read latency of UPD44647186AF5-E22-FQ1, and is it configurable?

The UPD44647186AF5-E22-FQ1 has a fixed 2.5-clock-cycle read latency, determined by its ordering code suffix "-E22" (2.2 ns cycle time). This latency is not user-configurable - it is hardwired at manufacturing and locked during power-on initialization. Unlike some DDR SRAM families, no mode register or command sequence can alter this value; attempting to force a different latency violates timing specifications and risks data corruption.

Does UPD44647186AF5-E22-FQ1 support both 1.5 V and 1.8 V I/O supply (VDDQ)?

Yes, UPD44647186AF5-E22-FQ1 supports VDDQ = 1.5 V ± 0.1 V or 1.8 V ± 0.1 V, as specified in the DDR II+ standard. However, the actual voltage must be selected at board design stage and maintained consistently across all HSTL I/O pins (DQ, CQ, QVLD, etc.). Mixing 1.5 V and 1.8 V on the same VDDQ plane is prohibited and will cause undefined behavior or damage.

How is on-die termination (ODT) enabled or disabled on UPD44647186AF5-E22-FQ1?

ODT on UPD44647186AF5-E22-FQ1 is controlled solely at power-on: the ODT pin must be held HIGH (e.g., tied to VDDQ via ≤10 kΩ) or LOW/NC *before* applying a stable clock. Once the DLL/PLL locks (≥20 μs after stable clock), the ODT state is frozen - no software or runtime command can change it. If ODT is enabled, RTT = 0.6 × RQ (typically 150 Ω with 250 Ω ZQ resistor).

Can UPD44647186AF5-E22-FQ1 operate without an external ZQ resistor?

No. UPD44647186AF5-E22-FQ1 requires an external resistor (175–350 Ω) connected from the ZQ pin to VSS to calibrate output drive strength and ODT resistance. Leaving ZQ unconnected, tying it to VDDQ, or connecting it directly to GND violates the specification and causes unpredictable output impedance, signal integrity failure, and potential bus contention. The device performs automatic ZQ calibration every 20 μs after power-up.

Is UPD44647186AF5-E22-FQ1 pin-compatible with earlier μPD44646093A-A series devices?

Yes - UPD44647186AF5-E22-FQ1 is a Renesas rebranded variant of the μPD44646093A-A family and shares identical 165-pin plastic BGA pinout, electrical characteristics, and functional behavior. The "UPD" prefix reflects Renesas' post-merger naming convention; all timing diagrams, truth tables, and register definitions from the original μPD44646093A-A datasheet (M19960EJ2V0DS) apply directly to UPD44647186AF5-E22-FQ1.