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Renesas UPD44647186AF5-E22-FQ1-A

Part No.:
UPD44647186AF5-E22-FQ1-A
Manufacturer:
Renesas
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixUPD44647186AF5-E22-FQ1-A.pdf
Description:
IC SRAM 72MBIT PARALLEL 165PBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,474

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Product details

Overview

UPD44647186AF5-E22-FQ1-A from Renesas Electronics is a 4,194,304-word × 18-bit synchronous Quad Data Rate II+ (QDR II+) SRAM with 2.5 clock cycles read latency, 1.8 V core supply, HSTL interface, and 165-pin plastic BGA (15 × 17) packaging. It delivers 450 MHz operation (2.2 ns clock cycle), supports concurrent read/write via separate data ports, and integrates DLL/PLL for precise timing in high-speed networking buffers.

For engineers reviewing the UPD44647186AF5-E22-FQ1-A datasheet, UPD44647186AF5-E22-FQ1-A pinout, UPD44647186AF5-E22-FQ1-A application, or UPD44647186AF5-E22-FQ1-A equivalent, key selection criteria include verified 2.5-cycle read latency, HSTL-compatible 1.8 V I/O, on-die termination (ODT) configurability, QVLD signal support, and 165-ball BGA mechanical compatibility with JEDEC MO-251.

Technical Context

This QDR II+ SRAM implements dual-edge DDR timing using K/K# input clocks and CQ/CQ# echo clocks to align output data validity. Its architecture features independent read/write data paths, a 4-word burst counter, and internally self-timed write control - enabling full bus utilization without turnaround cycles.

The device integrates user-programmable ODT (ON/OFF at power-on), ZQ-based output impedance tuning (35–70 Ω), and JTAG 1149.1 test access. DLL/PLL locking requires ≥190 MHz stable K-clock input; clock-stop mode resumes normal operation within 20 μs after resumption.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization4,194,304 words × 18 bits (72 M-bit density)
Read LatencyFixed 2.5 clock cycles - determines minimum time from R# assertion to first valid Q output
Max Clock Frequency450 MHz (2.2 ns cycle time) - sets maximum sustained data throughput
Supply VoltageVDD = 1.8 ± 0.1 V - powers core logic; VDDQ = 1.5/1.8 V - isolates I/O buffer supply
Interface StandardHSTL Class I - defines voltage thresholds, drive strength, and termination requirements
Package165-pin plastic BGA (15 mm × 17 mm, 1.0 mm pitch) - matches JEDEC MO-251 footprint
On-Die TerminationUser-selectable ODT (ON/OFF at power-on) - eliminates external resistors on D/BW# lines
Data Valid SignalQVLD output edge-aligned with CQ/CQ# - enables precise capture of burst data in FPGA/ASIC receivers

Pinout & Package

UPD44647186AF5-E22-FQ1-A is housed in a 165-pin plastic BGA (15 × 17 mm, 1.0 mm pitch), compliant with JEDEC MO-251. Pin functions are defined per the 4M × 18 configuration shown in the datasheet Figure 5 (page 5).

Pin/Terminal Circuit Role Design Meaning
A0–A19Synchronous Address Input20-bit address registered on K rising edge; used for 4-word burst addressing
D0–D17Synchronous Data Input18-bit write data sampled on both K and K# rising edges during WRITE cycle
Q0–Q17Synchronous Data Output18-bit read data aligned to K/K# rising edges; valid indicated by QVLD
R#, W#Command InputActive-low READ/WRITE strobes - initiate burst transactions on next K edge
BW0#, BW1#Byte Write SelectTwo independent 9-bit byte masks - enable partial writes without read-modify-write
K, K#Differential Input ClockSingle-ended pair (180° phase) - registers all inputs on K rising edge, data on both edges
CQ, CQ#Echo Clock OutputSingle-ended outputs tightly matched to Q outputs - used as data-valid timing reference
QVLDData Valid IndicatorOutput asserted edge-aligned with CQ/CQ# - signals when Q0–Q17 contain valid data
ODTOn-Die Termination ControlHigh at power-on enables 150 Ω ODT on D/BW# pins; state fixed after initialization
ZQImpedance Calibration InputConnect to resistor-to-ground (175–350 Ω) - sets output driver and ODT impedance

Key Features

Feature Design Value
Concurrent Read/Write PortsIndependent D and Q buses allow simultaneous access - eliminates bus turnaround penalty in packet buffering
QVLD Timing SignalEdge-aligned with CQ/CQ# - simplifies setup/hold timing closure in high-speed FPGA interfaces
User-Programmable ODTON/OFF selected at power-on via ODT pin - reduces PCB routing complexity and improves signal integrity
DLL/PLL Timing EngineLocks to K-clock ≥190 MHz - ensures wide data-valid window across temperature/voltage for 450 MHz operation
Four-Tick Burst OperationTransfers 4 words per command - halves effective address bus frequency vs. single-word access
IEEE 1149.1 JTAG SupportFull boundary-scan capability - enables production test and debug without intrusive probing

Applications

Packet Buffering in Switch ASICs Line Card Memory in Telecom Routers

Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switching fabric.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory for header lookup and queue management.

Use Value: 450 MHz operation and concurrent read/write enable >1.6 Gbps sustained throughput per port without arbitration stalls.

Use Scenario: Buffering variable-length ATM or IP cells in OC-192/STM-64 line interface cards.

IC Role / Device Role / Timing Role: Synchronous dual-port memory interfacing directly to SerDes PHYs and traffic managers.

Use Value: QVLD + CQ alignment guarantees deterministic data capture at 450 MHz, reducing FPGA timing margin overhead.

Baseband Processing in Wireless BTS Real-Time Video Frame Buffering

Use Scenario: Temporary storage of OFDM symbol data between FFT processing stages in LTE eNodeB baseband units.

IC Role / Device Role / Timing Role: Low-jitter, burst-access memory synchronized to system clock domain via K/K#.

Use Value: 2.5-cycle fixed latency enables predictable pipeline scheduling; HSTL interface ensures noise immunity in dense RF environments.

Use Scenario: Dual-frame buffering for 1080p60 video processing pipelines in broadcast encoders.

IC Role / Device Role / Timing Role: High-density SRAM providing seamless frame swap with zero-latency read-after-write capability.

Use Value: 72 M-bit capacity (4M×18) supports two full HD frames; ODT eliminates stub reflections on long parallel buses.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II+ SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C2665KV18-453BAXI4M × 18, 450 MHz, 2.5-cycle latency, same 165-pin BGA but Cypress-specific pinout and ODT implementationRequires layout revision due to non-identical pin mapping (e.g., CQ/CQ# location differs); no ZQ calibrationSelect only if existing design uses Cypress ecosystem and timing margins accommodate different echo clock skew.
AS7C32560A-15PCNAsynchronous 256K × 18 SRAM, 15 ns access, 3.3 V, SOJ-54 - no QDR, no burst, no clockingCannot replace in high-speed synchronous systems; suitable only for legacy control-plane memory where bandwidth < 100 Mbps sufficesUse only for cost-sensitive, low-bandwidth subsystems where QDR timing and burst features are unnecessary.

Compared with CY7C2665KV18-453BAXI and AS7C32560A-15PCN, UPD44647186AF5-E22-FQ1-A uniquely combines 450 MHz QDR II+ timing, QVLD signaling, and ZQ-calibrated ODT in a single 165-pin package - making it irreplaceable in new high-performance packet buffer designs requiring guaranteed data validity and impedance control.

Availability

UPD44647186AF5-E22-FQ1-A is available at Aetrix Electronics and suitable for high-speed packet buffering, telecom line card memory, wireless baseband processing, and real-time video frame storage requiring stable component supply across extended production lifecycles.

Supply support for UPD44647186AF5-E22-FQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The UPD44647186AF5-E22-FQ1-A belongs to Renesas' QDR II+ SRAM product line, engineered specifically for deterministic, high-throughput memory access in networking and communications equipment where sub-nanosecond timing precision and signal integrity are critical.

FAQ

What is the read latency of UPD44647186AF5-E22-FQ1-A, and is it configurable?

The UPD44647186AF5-E22-FQ1-A has a fixed 2.5 clock cycle read latency, as specified in the ordering code suffix "-E22" (2.2 ns cycle time). This latency is not user-configurable - it is hardwired per the QDR II+ specification and cannot be changed via register or pin setting. The device does not support 2.0-cycle mode; that variant is implemented in the -E20/-E25 versions of the μPD44647184A-A family.

Does UPD44647186AF5-E22-FQ1-A support on-die termination (ODT), and how is it enabled?

Yes, UPD44647186AF5-E22-FQ1-A supports ODT on D0–D17 and BW0#/BW1# pins. ODT is enabled by holding the ODT pin HIGH during power-on initialization - it must be tied to VDDQ (≤10 kΩ pull-up) before stable clock is applied. Once set, the ODT state (ON/OFF) is locked and cannot be changed dynamically; RTT is fixed at 150 Ω (0.6 × RQ, with RQ = 250 Ω).

What is the function of the QVLD pin on UPD44647186AF5-E22-FQ1-A, and how is it timed?

The QVLD pin on UPD44647186AF5-E22-FQ1-A is a synchronous output that indicates when Q0–Q17 data is valid. It is edge-aligned with the CQ and CQ# echo clocks - meaning its rising/falling edge coincides precisely with the data-valid window. This allows receiving logic (e.g., FPGA) to use QVLD as a clean strobe for capturing burst data without additional timing margin calculation.

Can UPD44647186AF5-E22-FQ1-A operate with a 1.5 V VDDQ supply, and what are the implications?

Yes, UPD44647186AF5-E22-FQ1-A supports VDDQ = 1.5 ± 0.1 V (in addition to 1.8 V), as confirmed in the QDR II+ feature comparison table. Using 1.5 V reduces I/O power consumption and improves noise margin for HSTL Class I receivers, but requires matching VREF to VDDQ/2 (0.75 V) and verifying ODT impedance (RTT scales with RQ, not VDDQ). The core VDD remains fixed at 1.8 V.

What is the purpose of the ZQ pin on UPD44647186AF5-E22-FQ1-A, and how should it be connected?

The ZQ pin on UPD44647186AF5-E22-FQ1-A is used for output impedance calibration. It must be connected to a precision resistor (175–350 Ω) pulled to VSS - never left floating or tied directly to VDDQ/GND. During power-on, the device measures this resistance and sets driver/ODT impedance to 0.2×RQ (outputs) or 0.6×RQ (ODT). For minimum impedance, connect ZQ directly to VDDQ (not VSS).

UPD44647186AF5-E22-FQ1-A Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
450 MHz
Write Cycle Time - Word, Page:
2.2ns
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-PBGA (13x15)

UPD44647186AF5-E22-FQ1-A FAQ

1.How can I place an order for UPD44647186AF5-E22-FQ1-A through Aetrix?

Please submit a Request for Quotation (RFQ) for UPD44647186AF5-E22-FQ1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPD44647186AF5-E22-FQ1-A reliable?

The price and inventory of UPD44647186AF5-E22-FQ1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD44647186AF5-E22-FQ1-A is usually 5 days.

3.What payment methods are accepted for UPD44647186AF5-E22-FQ1-A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPD44647186AF5-E22-FQ1-A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UPD44647186AF5-E22-FQ1-A?

UPD44647186AF5-E22-FQ1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPD44647186AF5-E22-FQ1-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPD44647186AF5-E22-FQ1-A?

For technical support, including UPD44647186AF5-E22-FQ1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD44647186AF5-E22-FQ1-A requirements.

6.How does Aetrix verify that UPD44647186AF5-E22-FQ1-A is sourced from the original manufacturer or authorized distributors?

All UPD44647186AF5-E22-FQ1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD44647186AF5-E22-FQ1-A meets industry standards.

7.What is the process for return or replacement of UPD44647186AF5-E22-FQ1-A?

All UPD44647186AF5-E22-FQ1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPD44647186AF5-E22-FQ1-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPD44647186AF5-E22-FQ1-A part is unused and in its original packaging.

Return procedure for UPD44647186AF5-E22-FQ1-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

UPD44647186AF5-E22-FQ1-A Tags

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