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Renesas UPD44647186AF5-E25-FQ1
- Part No.:
- UPD44647186AF5-E25-FQ1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
UPD44647186AF5-E25-FQ1.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,059
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Product details
Overview
UPD44647186AF5-E25-FQ1 from Renesas Electronics is a 4,194,304-word × 18-bit synchronous Quad Data Rate II+ (QDR II+) SRAM with 2.5 clock cycles read latency, HSTL interface, and 165-pin plastic BGA (15 × 17 mm) packaging. It operates at 1.8 V core supply, supports 400 MHz clock frequency (2.5 ns cycle time), and delivers concurrent read/write capability for high-bandwidth networking buffers and packet memory applications.
For engineers reviewing the UPD44647186AF5-E25-FQ1 datasheet, UPD44647186AF5-E25-FQ1 pinout, UPD44647186AF5-E25-FQ1 application, or UPD44647186AF5-E25-FQ1 equivalent, this device serves as a high-speed, low-voltage, burst-mode static RAM optimized for DDR-adjacent system architectures requiring deterministic 2.5-cycle latency, on-die termination, and QVLD-synchronized data validity in telecom switching and FPGA co-processor memory subsystems.
Technical Context
This QDR II+ SRAM implements dual-edge-triggered synchronous operation using K/K# input clocks and CQ/CQ# echo clocks to align output data valid windows. Its architecture features separate read/write data ports, a 4-word burst counter, and DLL/PLL circuitry enabling stable 400 MHz operation with precise timing margins.
The device integrates user-programmable output impedance (35–70 Ω), selectable on-die termination (ODT) on Dxx/BWx# pins, and clock-stop mode restoring operation within 20 μs. All control and address inputs are registered on K's rising edge; data inputs register on both K and K# rising edges, while outputs align to K/K# rising edges per the 2.5-cycle latency timing table.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 4,194,304 words × 18 bits = 72 Mbit total capacity |
| Read Latency | Fixed 2.5 clock cycles - determines minimum delay between R# assertion and first valid Q output |
| Maximum Clock Frequency | 400 MHz - enables 1.6 GB/s peak bandwidth (2 × 400 MHz × 18 bits) |
| Supply Voltage | 1.8 V ± 0.1 V core (VDD); 1.5/1.8 V I/O (VDDQ) - requires tight regulation for HSTL compliance |
| Interface Standard | HSTL Class I - mandates VREF = VDDQ/2 reference and controlled-impedance routing |
| Burst Length | 4-word burst - reduces address bus toggling and simplifies controller address generation |
| Package | 165-pin plastic BGA (15 mm × 17 mm, 1.0 mm pitch) - requires PCB reflow profile compatible with lead-free assembly |
Pinout & Package
UPD44647186AF5-E25-FQ1 is housed in a 165-pin plastic BGA (15 × 17 mm, 1.0 mm pitch) with standard ball grid layout for x18 configuration. Pin functions follow QDR II+ specification with dedicated address, data, control, echo clock, JTAG, and power/ground balls.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Synchronous Address Input | 20-bit address registered on K rising edge; defines 4M-word depth for x18 organization |
| D0–D17 | Synchronous Data Input | 18-bit write data registered on K and K# rising edges during WRITE cycle |
| Q0–Q17 | Synchronous Data Output | 18-bit read data aligned to K/K# rising edges with 2.5-cycle latency; validated by QVLD |
| R#, W#, BW0#, BW1# | Control Inputs | Active-low commands: R# initiates read; W# initiates write; BW0#/BW1# enable byte-wise write masking |
| K, K# | Differential Input Clock | Primary timing reference; all registers triggered on K rising edge; K# phase-aligned for data capture |
| CQ, CQ# | Echo Clock Output | Single-ended outputs edge-aligned with Q outputs; used for data capture timing at receiver |
| QVLD | Data Valid Indicator | Asserted synchronously with first valid Q word; eliminates need for fixed-latency delay in controller logic |
| ODT | On-Die Termination Control | High at power-on enables 150 Ω ODT on D0–D17 and BW0#/BW1# pins; fixed after initialization |
| ZQ | Impedance Calibration Input | Connected to external 250 Ω resistor to ground; sets output driver and ODT impedance to ±20% tolerance |
| VDD, VDDQ, VSS, VREF | Power & Reference | VDD = 1.8 V core; VDDQ = 1.5/1.8 V I/O; VREF = VDDQ/2; multiple VSS balls required for noise suppression |
Key Features
| Feature | Design Value |
|---|---|
| Concurrent Read/Write Ports | Enables full 100% bus utilization - simultaneous access without arbitration delay in pipeline buffers |
| QVLD Synchronization Signal | Eliminates fixed-latency assumptions in controller design; allows dynamic alignment of data capture windows |
| User-Programmable Output Impedance | 35–70 Ω range via ZQ calibration - matches varied PCB trace impedances without external series resistors |
| On-Die Termination (ODT) | 150 Ω selectable ODT on data and byte-write inputs - reduces stub reflections and improves signal integrity at 400 MHz |
| IEEE 1149.1 JTAG Interface | Full boundary-scan support (TMS, TCK, TDI, TDO) - enables in-system test and debug without physical probe access |
| 20 μs Clock-Stop Recovery | Allows dynamic power gating of clock tree; restores full functionality within 20 μs after clock resumption |
Applications
| Telecom Line Card Buffer | Network Processor Co-Memory |
|---|---|
Use Scenario: High-speed packet buffering in 10G/40G line cards where ingress/egress traffic must be temporarily stored before classification and forwarding. IC Role / Device Role / Timing Role: Dual-port SRAM acting as a zero-latency, burst-access FIFO with independent read/write pointers synchronized to network clock domains. Use Value: 400 MHz operation and 2.5-cycle deterministic latency ensure predictable queuing delay; QVLD eliminates setup/hold margin uncertainty in ASIC-side capture logic. |
Use Scenario: Off-chip memory extension for multi-core network processors performing deep packet inspection and flow table lookups. IC Role / Device Role / Timing Role: High-bandwidth, low-latency scratchpad memory mapped into processor address space via dedicated QDR interface. Use Value: 72 Mbit x18 organization provides 16 MB of contiguous storage; HSTL interface and ODT maintain signal integrity across 8+ inch traces on dense backplanes. |
| FPGA-Based Protocol Accelerator | Baseband Processing Memory |
Use Scenario: Real-time protocol stack acceleration in FPGA-based wireless infrastructure (e.g., LTE MAC layer scheduling buffers). IC Role / Device Role / Timing Role: Burst-mode memory interfaced directly to FPGA fabric via hardened I/O banks supporting HSTL Class I. Use Value: 4-word burst reduces address bus width and controller complexity; DLL/PLL ensures jitter-tolerant timing at 400 MHz despite FPGA-generated clocks. |
Use Scenario: Intermediate result storage in 5G massive MIMO baseband processing units requiring rapid access to channel estimation and precoding matrices. IC Role / Device Role / Timing Role: Low-power, high-reliability SRAM serving as ping-pong buffer between FFT/IFFT engines and digital front-end blocks. Use Value: 1.8 V supply and clock-stop mode reduce dynamic power; 165-pin BGA footprint enables compact placement adjacent to FPGA or ASIC die. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II+ SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C2665KV18 | Same x18 organization, 2.5-cycle latency, 400 MHz, but uses 1.5 V VDDQ only (no 1.8 V option); different pinout and ODT implementation | Requires redesign of power delivery and termination network; not pin-compatible | Select when 1.5 V-only I/O compliance is mandatory and board layout allows rework |
| AS7C3256B | Asynchronous CMOS SRAM; no QDR interface, no burst, no echo clocks; 15 ns access, 3.3 V operation | Cannot replace in high-speed synchronous systems; suitable only for legacy control-plane memory or non-timing-critical buffers | Choose only for cost-sensitive, low-frequency applications where QDR features are unnecessary |
Compared with CY7C2665KV18 and AS7C3256B, UPD44647186AF5-E25-FQ1 uniquely delivers HSTL-compliant 400 MHz QDR II+ operation with QVLD and programmable ODT in a single 165-pin BGA package - making it irreplaceable in new designs targeting deterministic latency and signal integrity at multi-gigabit data rates.
Availability
UPD44647186AF5-E25-FQ1 is available at Aetrix Electronics and suitable for telecom infrastructure, network processor subsystems, and FPGA-based protocol accelerators requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant lead-free packaging.
Supply support for UPD44647186AF5-E25-FQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.
UPD44647186AF5-E25-FQ1 belongs to Renesas' QDR II+ SRAM product line, engineered specifically for high-speed packet memory in next-generation networking equipment where deterministic latency, signal integrity, and burst efficiency are critical.
FAQ
What is the exact memory organization and density of UPD44647186AF5-E25-FQ1?
UPD44647186AF5-E25-FQ1 is organized as 4,194,304 words × 18 bits, delivering a total density of 72 Mbit (9 Mbyte). This x18 configuration is confirmed in the Renesas datasheet M19962EJ2V0DS under Ordering Information and Pin Configurations sections for the μPD44647186A-A family. The part number suffix "186" explicitly denotes the x18 variant with 2.5-cycle latency.
Does UPD44647186AF5-E25-FQ1 support both 1.5 V and 1.8 V I/O supply (VDDQ)?
Yes, UPD44647186AF5-E25-FQ1 supports VDDQ at either 1.5 V ± 0.1 V or 1.8 V ± 0.1 V, as specified in the QDR II+ Feature Differences table and DC Characteristics section of the datasheet. This dual-voltage flexibility allows interoperability with both legacy 1.5 V HSTL systems and newer 1.8 V implementations without level-shifting.
Is the read latency of UPD44647186AF5-E25-FQ1 user-selectable?
No, the read latency of UPD44647186AF5-E25-FQ1 is fixed at 2.5 clock cycles and not user-selectable. As stated in the datasheet Feature Differences table, QDR II+ devices offer 2.0-cycle and 2.5-cycle variants as distinct part numbers - UPD44647186AF5-E25-FQ1 is the 2.5-cycle version, and its latency is hardwired in silicon.
How is On-Die Termination (ODT) configured on UPD44647186AF5-E25-FQ1?
ODT on UPD44647186AF5-E25-FQ1 is enabled by holding the ODT pin HIGH during power-on sequence; it cannot be changed dynamically. When active, ODT applies 150 Ω termination (0.6 × RQ, with RQ = 250 Ω) to all D0–D17 and BW0#/BW1# pins, as defined in the On-Die Termination DC Parameters table and initialization flowchart in the datasheet.
What is the function of the QVLD pin on UPD44647186AF5-E25-FQ1?
The QVLD (Q Valid) pin on UPD44647186AF5-E25-FQ1 is an output that asserts synchronously with the first valid data word (Q0–Q17) during a READ cycle. As documented in the Pin Identification table and Truth Table, QVLD is edge-aligned with CQ/CQ# and eliminates the need for fixed-latency timing assumptions in the memory controller's data capture logic.
UPD44647186AF5-E25-FQ1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 2.5ns
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-PBGA (13x15)
UPD44647186AF5-E25-FQ1 FAQ
1.How can I place an order for UPD44647186AF5-E25-FQ1 through Aetrix?
Please submit a Request for Quotation (RFQ) for UPD44647186AF5-E25-FQ1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPD44647186AF5-E25-FQ1 reliable?
The price and inventory of UPD44647186AF5-E25-FQ1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD44647186AF5-E25-FQ1 is usually 5 days.
3.What payment methods are accepted for UPD44647186AF5-E25-FQ1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPD44647186AF5-E25-FQ1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPD44647186AF5-E25-FQ1?
UPD44647186AF5-E25-FQ1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPD44647186AF5-E25-FQ1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPD44647186AF5-E25-FQ1?
For technical support, including UPD44647186AF5-E25-FQ1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD44647186AF5-E25-FQ1 requirements.
6.How does Aetrix verify that UPD44647186AF5-E25-FQ1 is sourced from the original manufacturer or authorized distributors?
All UPD44647186AF5-E25-FQ1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD44647186AF5-E25-FQ1 meets industry standards.
7.What is the process for return or replacement of UPD44647186AF5-E25-FQ1?
All UPD44647186AF5-E25-FQ1 units undergo pre-shipment inspection (PSI). If there is an issue with UPD44647186AF5-E25-FQ1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPD44647186AF5-E25-FQ1 part is unused and in its original packaging.
Return procedure for UPD44647186AF5-E25-FQ1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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