Renesas UPD44647186AF5-E25-FQ1-A

Overview

UPD44647186AF5-E25-FQ1-A from Renesas Electronics is a 4,194,304-word × 18-bit synchronous quad data rate II+ (QDR II+) SRAM with 2.5 clock cycles read latency, HSTL interface, and 165-pin plastic BGA (15 × 17) packaging. It operates at 1.8 V core supply, supports 400 MHz clock frequency (2.5 ns cycle time), and delivers concurrent read/write capability for high-bandwidth networking and packet buffering applications.

For engineers reviewing the UPD44647186AF5-E25-FQ1-A datasheet, UPD44647186AF5-E25-FQ1-A pinout, UPD44647186AF5-E25-FQ1-A application, or UPD44647186AF5-E25-FQ1-A equivalent, key selection criteria include its 2.5-cycle read latency timing, user-programmable on-die termination (ODT), QVLD data-valid signal, dual-edge DDR operation, and JTAG 1149.1 test access compliance.

Technical Context

This QDR II+ SRAM uses full-CMOS six-transistor memory cells and integrates DLL/PLL circuitry to widen the output data valid window and support scaling to 500 MHz. Its synchronous peripheral logic latches all inputs-including address, R#, W#, BW0#/BW1#, and ODT-on the rising edges of complementary input clocks K and K#.

The device implements separate read and write data ports enabling true concurrent transactions, supports four-word burst operation to reduce address bus frequency, and features clock-stop capability with full functional recovery within 20 μs after clock resumption. Output impedance is user-tunable (35–70 Ω) via ZQ pin calibration.

Key Specifications

Pinout & Package

UPD44647186AF5-E25-FQ1-A is housed in a 165-pin plastic BGA (15 × 17 mm) package with 0.8 mm ball pitch. Pin assignments follow the x18 organization variant as documented in Renesas Data Sheet M19962EJ2V0DS (pages 5–6).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II+ SRAM applications.

Compared with CY7C2665KV18-400BZXC and AS7C34098A-400BIN, UPD44647186AF5-E25-FQ1-A offers native HSTL compatibility, integrated QVLD for simplified capture logic, and Renesas' validated DLL/PLL performance at 400 MHz - making it optimal for new high-speed networking designs requiring minimal timing margin risk.

Availability

UPD44647186AF5-E25-FQ1-A is available at Aetrix Electronics and suitable for high-speed networking equipment, telecom line cards, wireless baseband units, and test & measurement instruments requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.

Supply support for UPD44647186AF5-E25-FQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The UPD44647186AF5-E25-FQ1-A belongs to Renesas' QDR II+ SRAM product line, engineered specifically for high-bandwidth, low-latency applications in networking infrastructure and real-time signal processing systems.

FAQ

What is the exact memory organization and density of UPD44647186AF5-E25-FQ1-A?

UPD44647186AF5-E25-FQ1-A is organized as 4,194,304 words × 18 bits, delivering a total density of 72 Mbit. This configuration supports efficient 18-bit or 36-bit data paths common in packet processing and DSP applications. The part number suffix "186" explicitly denotes the x18 organization and 2.5-cycle read latency variant within the μPD44647 family.

Does UPD44647186AF5-E25-FQ1-A support both 1.5 V and 1.8 V I/O supply (VDDQ)?

Yes, UPD44647186AF5-E25-FQ1-A supports VDDQ at either 1.5 V ± 0.1 V or 1.8 V ± 0.1 V, as specified in the QDR II+ standard. This flexibility allows interoperability with both legacy 1.5 V HSTL systems and newer 1.8 V implementations. The core VDD remains fixed at 1.8 V ± 0.1 V regardless of VDDQ selection.

How is on-die termination (ODT) configured on UPD44647186AF5-E25-FQ1-A?

ODT on UPD44647186AF5-E25-FQ1-A is enabled or disabled solely at power-on based on the logic state of the ODT pin: HIGH enables ODT (RTT = 0.6 × RQ), LOW or open disables it. Once set, the ODT state cannot be changed dynamically. The ZQ pin must be connected to a 175–350 Ω resistor to ground to calibrate output impedance.

What is the function and timing relationship of the QVLD signal on UPD44647186AF5-E25-FQ1-A?

QVLD on UPD44647186AF5-E25-FQ1-A is an output that indicates when Q[0:17] data is valid. It is edge-aligned with the CQ and CQ# echo clocks - not with K/K# - providing precise, jitter-immune data-valid timing for high-speed capture logic. QVLD asserts one cycle before the first Q word appears and remains asserted for the full 4-word burst duration.

Can UPD44647186AF5-E25-FQ1-A operate with stopped clock, and what is the recovery time?

Yes, UPD44647186AF5-E25-FQ1-A supports clock-stop mode: when K/K# halt, internal state is preserved and outputs remain stable. Normal operation resumes within 20 μs after clock restart, provided DLL# remains HIGH and stable clock is applied for ≥20 μs to re-lock the DLL/PLL. No reset sequence is required.