Renesas UPD44647186AF5-E30-FQ1

Overview

UPD44647186AF5-E30-FQ1 from Renesas Electronics is a 4,194,304-word × 18-bit synchronous Quad Data Rate II+ (QDR II+) SRAM with 2.5 clock cycles read latency, HSTL interface, and 165-pin plastic BGA (15 × 17 mm) packaging. It operates at 1.8 V core supply, supports 333 MHz clock frequency (3.0 ns cycle time), and delivers concurrent read/write capability for high-bandwidth networking buffers and packet memory applications.

For engineers reviewing the UPD44647186AF5-E30-FQ1 datasheet, UPD44647186AF5-E30-FQ1 pinout, UPD44647186AF5-E30-FQ1 application, or UPD44647186AF5-E30-FQ1 equivalent, key selection criteria include its 2.5-cycle read latency timing, user-programmable on-die termination (ODT), QVLD data-valid signaling, burst-4 DDR operation, and compatibility with JTAG 1149.1 test infrastructure.

Technical Context

This QDR II+ SRAM uses dual-edge-triggered input clocks (K/K#) to register address/control on K↑ and data on both K↑ and K#↑, enabling true double-data-rate throughput. Its internal DLL/PLL ensures wide output data valid window and supports frequencies up to 500 MHz - though the UPD44647186AF5-E30-FQ1 variant is rated for 333 MHz (3.0 ns).

The device implements separate read and write data ports, allowing fully concurrent transactions without bus arbitration. It features echo clocks (CQ/CQ#) edge-aligned with output data and a dedicated QVLD signal to indicate valid Q outputs - all synchronized to the same clock domain as data.

Key Specifications

Pinout & Package

UPD44647186AF5-E30-FQ1 is housed in a 165-pin plastic ball grid array (BGA) package measuring 15 mm × 17 mm with 0.8 mm pitch. The package supports automated assembly and thermal dissipation suitable for high-density routing in telecom and networking PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II+ SRAM applications.

Compared with UPD44647186AF5-E30-FQ1, the CY7C2665KV18-333BZI offers identical performance and pinout with broader temperature qualification, while the AS7C3256A-333BIN sacrifices QVLD, ODT, and echo clocks to reduce cost and complexity - making it suitable only where those features are unnecessary.

Availability

UPD44647186AF5-E30-FQ1 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and baseband processing applications requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.

Supply support for UPD44647186AF5-E30-FQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The UPD44647186AF5-E30-FQ1 belongs to Renesas' QDR II+ SRAM product line, designed specifically for high-throughput, low-latency memory subsystems in networking equipment, base stations, and test instrumentation.

FAQ

What is the read latency of the UPD44647186AF5-E30-FQ1, and can it be configured?

The UPD44647186AF5-E30-FQ1 has a fixed 2.5 clock cycles read latency, which is determined by the device variant and cannot be altered by user configuration. This latency is set at manufacturing and latched during power-on initialization - unlike some QDR II+ families offering selectable modes, the UPD44647186AF5-E30-FQ1 is strictly a 2.5-cycle device per its ordering code suffix "-E30" and datasheet specification.

Does the UPD44647186AF5-E30-FQ1 support on-die termination (ODT), and how is it enabled?

Yes, the UPD44647186AF5-E30-FQ1 supports on-die termination on its D0–D17 and BW0#/BW1# pins. ODT is enabled by holding the ODT pin HIGH during power-on sequence - it is latched at initialization and remains fixed throughout operation. When active, ODT sets termination resistance to 150 Ω (typ.), calibrated via the ZQ pin's external 250 Ω resistor to ground.

What is the function of the QVLD pin on the UPD44647186AF5-E30-FQ1, and how does it improve system timing?

The QVLD pin on the UPD44647186AF5-E30-FQ1 signals when output data Q0–Q17 is valid and stable. It is edge-aligned with the CQ/CQ# echo clocks, providing a deterministic strobe for capturing burst-read data. This eliminates reliance on fixed delay chains or PLL-based deskew, significantly simplifying timing closure in FPGA- or ASIC-based receivers interfacing to the UPD44647186AF5-E30-FQ1.

Can the UPD44647186AF5-E30-FQ1 operate with a 1.5 V VDDQ supply, and what are the implications?

Yes, the UPD44647186AF5-E30-FQ1 supports VDDQ = 1.5 V ± 0.1 V (in addition to 1.8 V), as specified in the QDR II+ standard. Using 1.5 V reduces I/O power consumption and eases termination design when interfacing with 1.5 V logic, but requires adjusting VREF to 0.75 V (VDDQ/2) and verifying HSTL Class I receiver compatibility in the connected controller.

How does the UPD44647186AF5-E30-FQ1 handle clock stop, and what is the recovery time?

The UPD44647186AF5-E30-FQ1 supports clock-stop mode: when K/K# are halted, internal state is preserved and outputs remain valid until resumed. Upon clock restart, normal operation resumes within 20 μs - no reset or reinitialization is required. This feature enables dynamic power gating in low-traffic intervals while maintaining data coherency in the UPD44647186AF5-E30-FQ1 memory array.