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Renesas UPD44647366AF5-E22-FQ1-A
- Part No.:
- UPD44647366AF5-E22-FQ1-A
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
UPD44647366AF5-E22-FQ1-A.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:109
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Product details
Overview
UPD44647366AF5-E22-FQ1-A from Renesas Electronics is a 2,097,152-word × 36-bit synchronous Quad Data Rate II+ (QDR II+) SRAM with 2.5 clock cycles read latency, HSTL interface, and 165-pin plastic BGA (15 × 17) packaging. It operates at 1.8 V core supply, supports 450 MHz clock frequency (2.2 ns cycle time), and delivers concurrent read/write ports for high-bandwidth networking buffer applications.
For engineers reviewing the UPD44647366AF5-E22-FQ1-A datasheet, UPD44647366AF5-E22-FQ1-A pinout, UPD44647366AF5-E22-FQ1-A application, or UPD44647366AF5-E22-FQ1-A equivalent, this page provides verified specifications, validated pin functions, confirmed QDR II+ timing behavior, ODT configuration constraints, and real-world use context for telecom packet buffering and FPGA co-processor memory subsystems.
Technical Context
This device implements a true dual-port synchronous architecture with independent read and write data paths, enabling simultaneous access without arbitration delay. Its DLL/PLL circuit locks to K/K# input clocks to generate precise internal timing for 4-word burst reads aligned to echo clocks CQ/CQ#, with QVLD providing edge-aligned data validity indication.
The UPD44647366AF5-E22-FQ1-A uses full CMOS six-transistor memory cells and integrates on-die termination (ODT) controllable via the ODT pin at power-on, supporting 105–210 Ω termination resistance when paired with a 175–350 Ω ZQ resistor. It requires strict power sequencing (VDD before VDDQ, then VREF) and clock stabilization (>20 μs) before normal operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 2,097,152 words × 36 bits (72 M-bit density) |
| Read Latency | 2.5 clock cycles - fixed at power-on; determines minimum clock-to-output delay for burst reads |
| Maximum Clock Frequency | 450 MHz - corresponds to 2.2 ns cycle time; enables 3.6 Gbps per data pin in DDR mode |
| Supply Voltages | VDD = 1.8 ± 0.1 V (core); VDDQ = 1.5 or 1.8 V (I/O); critical for HSTL signal integrity and ODT calibration |
| Interface Standard | HSTL Class I - defines voltage thresholds, drive strength, and AC timing requirements for reliable 450 MHz operation |
| Package | 165-pin plastic BGA (15 mm × 17 mm) - requires controlled-impedance PCB layout with 0.8 mm ball pitch |
| On-Die Termination | Configurable ODT (ON/OFF at power-on only); RTT = 0.6 × RQ; RQ = 175–350 Ω → RTT = 105–210 Ω |
| Input Clock Pair | K/K# - single-ended, 180° phase-matched inputs; all registers latch on rising edges only |
Pinout & Package
UPD44647366AF5-E22-FQ1-A is housed in a 165-pin plastic BGA (15 × 17 mm, 0.8 mm pitch) with standard top-side marking and index corner defined per Renesas package drawing. Pin functions are validated per the "2M x 36" configuration in the official datasheet (M19962EJ2V0DS, pp. 6–7).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Synchronous Address Inputs | 19-bit address bus registered on K/K# rising edges; used for 2M-word addressing in burst-4 mode |
| D0–D35 | Synchronous Data Inputs | 36-bit write data path; latched across two consecutive K/K# rising edges during WRITE cycles |
| Q0–Q35 | Synchronous Data Outputs | 36-bit read data path; output aligned to K/K# rising edges with QVLD edge synchronization |
| R#, W# | Command Inputs | Active-low read/write strobes; initiate burst transactions on next K rising edge; mutually exclusive in same cycle |
| BW0#–BW3# | Byte Write Enables | Four independent active-low signals controlling 9-bit byte lanes; enable partial writes without read-modify-write |
| K, K# | Input Clock Pair | Primary timing reference; all synchronous operations triggered on rising edges; phase alignment critical for DLL lock |
| CQ, CQ# | Echo Clock Outputs | Single-ended outputs tightly matched to Q outputs; used as system-level data valid timing reference |
| QVLD | Data Valid Output | Edge-aligned with CQ/CQ#; indicates first valid word of 4-word burst; essential for receiver capture window setup |
| ZQ | Impedance Calibration Input | Connects to external resistor (175–350 Ω) to ground; sets output driver and ODT impedance (RTT = 0.6 × RQ) |
| ODT | ODT Control Input | Must be HIGH or LOW at power-on to enable/disable ODT on D/BW pins; state is latched and immutable post-power-up |
| DLL# | DLL/PLL Disable | Must be HIGH (tied to VDDQ) for normal operation; pulling LOW disables DLL/PLL and invalidates AC specs |
| VDD, VDDQ, VSS, VREF | Power & Reference | VDD (1.8 V core), VDDQ (1.5/1.8 V I/O), VSS (ground), VREF (VDDQ/2 reference for HSTL inputs) |
| TMS, TDI, TCK, TDO | JTAG Test Interface | IEEE 1149.1 compliant; 1.8 V I/O level; TCK must tie to VSS if unused |
Key Features
| Feature | Design Value |
|---|---|
| Concurrent Read/Write Ports | Enables full 100% bus utilization in packet buffering systems-no arbitration stalls between ingress/egress traffic streams |
| 4-Word Burst Operation | Reduces address bus toggling by 75% vs. discrete addressing; lowers EMI and simplifies controller logic for sequential access patterns |
| User-Programmable Output Impedance | 35–70 Ω range via ZQ resistor tuning-matches trace impedance without external series resistors, improving signal integrity at 450 MHz |
| On-Die Termination (ODT) | Eliminates need for external parallel termination on D/BW lines; reduces PCB area, BOM count, and stub-induced reflections |
| Clock-Stop Capability | Enters low-power state within 100 ns; resumes full operation in ≤20 μs after clock restart-ideal for bursty traffic with idle intervals |
| JTAG 1149.1 Test Access | Enables boundary-scan testing of BGA solder joints and interconnects without physical probe access-critical for high-reliability telecom assemblies |
Applications
| Telecom Line Card Buffering | Network Processor Co-Memory |
|---|---|
Use Scenario: High-speed packet buffering in 10G/40G line cards where ingress and egress traffic must be decoupled with zero-latency arbitration. IC Role / Device Role / Timing Role: Dual-port QDR II+ SRAM acting as shared FIFO between SERDES PHY and network processor, synchronized to K/K# clocks with QVLD-driven capture. Use Value: 2.5-cycle latency and 450 MHz operation deliver 32.4 GB/s aggregate bandwidth-sufficient for full-duplex 40G Ethernet with headroom for deep buffering. |
Use Scenario: Offloading packet classification and table lookup from CPU cores using dedicated TCAM-assisted search engines. IC Role / Device Role / Timing Role: High-density, low-latency memory backing LUT-based forwarding tables; accessed concurrently by multiple pipeline stages via separate read/write ports. Use Value: 36-bit wide interface reduces memory access count per lookup; HSTL signaling ensures timing closure at 450 MHz on dense FPGA interconnects. |
| FPGA-Based Protocol Accelerator | Optical Transport Switch Fabric |
Use Scenario: Real-time encryption/decryption acceleration in optical transport equipment requiring deterministic latency and high throughput. IC Role / Device Role / Timing Role: Dedicated SRAM block interfacing directly with FPGA fabric for AES round key storage and cipher text staging; clocked by same domain as crypto engine. Use Value: Clock-stop capability allows dynamic power gating during idle periods without disrupting ongoing crypto sessions-reducing average power by >40%. |
Use Scenario: Shared memory for crosspoint switching in OTN (Optical Transport Network) multiplexers handling OC-192/STM-64 payloads. IC Role / Device Role / Timing Role: Centralized buffer managing cell-based traffic across multiple switch ports; coordinated via centralized arbiter using R#/W# command protocol. Use Value: 72 M-bit density and 2M×36 organization minimize chip count per 100G switch stage; ODT eliminates termination design iterations on backplane traces. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II+ SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C2665KV18-450BAXI | 2M × 36, 450 MHz, 2.5-cycle latency, 1.8 V, 165-pin BGA-but Cypress part uses SSTL-2 I/O, not HSTL | Requires level-shifting or redesign of I/O termination network; incompatible with Renesas' ZQ/ODT calibration scheme | Select only if existing board uses SSTL-2 infrastructure and controller supports different timing parameters. |
| AS7C362000B-20JI | 2M × 36, 20 ns async access, 3.3 V CMOS-fundamentally asynchronous, no K/K# clocks, no QVLD or ODT | Cannot replace in QDR-clocked systems; lacks burst, DLL, echo clocks, or concurrent port capability | Only viable for legacy non-timing-critical control-plane memory where bandwidth < 100 MB/s suffices. |
Compared with CY7C2665KV18-450BAXI and AS7C362000B-20JI, UPD44647366AF5-E22-FQ1-A uniquely combines HSTL compatibility, QVLD-synchronized burst reads, and user-configurable ODT-making it irreplaceable in new 40G+ telecom designs requiring signal integrity at 450 MHz without external termination components.
Availability
UPD44647366AF5-E22-FQ1-A is available at Aetrix Electronics and suitable for telecom line card buffering, network processor co-memory, FPGA-based protocol acceleration, and optical transport switch fabric applications requiring stable component supply, long-term lifecycle support, and guaranteed lead-free compliance.
Supply support for UPD44647366AF5-E22-FQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.
The UPD44647366AF5-E22-FQ1-A belongs to Renesas' QDR II+ SRAM product line, engineered specifically for high-throughput, low-latency packet buffering in carrier-grade networking equipment operating at OC-192/STM-64 and beyond.
FAQ
What is the exact memory organization and density of UPD44647366AF5-E22-FQ1-A?
UPD44647366AF5-E22-FQ1-A is organized as 2,097,152 words × 36 bits, delivering 72 M-bit (9 M-byte) total memory capacity. This configuration is explicitly confirmed in the Renesas datasheet M19962EJ2V0DS, Section "Description", and matches the "2M x 36" designation in the ordering table for part numbers ending in "-E22-FQ1-A". The device uses full CMOS six-transistor memory cells fabricated in an advanced process node.
Does UPD44647366AF5-E22-FQ1-A support user-selectable read latency?
No, UPD44647366AF5-E22-FQ1-A has fixed 2.5 clock cycles read latency determined at manufacturing. As stated in the datasheet Feature Differences table (p.3), "QDR II+ read latency is not user selectable. Offered as two different devices." The "-E22" suffix denotes the 2.2 ns cycle time variant optimized for 450 MHz operation with 2.5-cycle latency-no register, pin, or command can alter this value.
How is On-Die Termination (ODT) configured on UPD44647366AF5-E22-FQ1-A?
ODT on UPD44647366AF5-E22-FQ1-A is enabled or disabled solely at power-on via the ODT pin state: HIGH enables ODT (RTT = 0.6 × RQ), LOW or open disables it. The state is latched internally and cannot be changed during operation. RQ is set by an external resistor from ZQ to ground (175–350 Ω), defining RTT between 105–210 Ω. This behavior is documented in the "ODT initialization" section (p.9) and "ODT-option clarification" table (p.10).
What are the power sequencing requirements for UPD44647366AF5-E22-FQ1-A?
UPD44647366AF5-E22-FQ1-A requires strict power sequencing: VSS first, then VDD, followed by VDDQ (VDDQ must not exceed VDD by >0.5 V), then VREF, and finally input signals. Power-down follows the reverse order. Stable clock must be applied for ≥20 μs after supplies stabilize to lock the DLL/PLL. These requirements are specified in the "Power-On Sequence" section (p.9) and are mandatory to prevent undefined operation or initialization failure.
Can UPD44647366AF5-E22-FQ1-A operate with a 1.5 V VDDQ supply?
Yes, UPD44647366AF5-E22-FQ1-A supports VDDQ = 1.5 ± 0.1 V or 1.8 ± 0.1 V, as confirmed in the "Feature Differences between QDR II and QDR II+" table (p.3) and "Recommended DC Operating Conditions" (not shown but referenced in datasheet). Using 1.5 V VDDQ reduces I/O power consumption and is compatible with HSTL Class I specifications when VREF is set to VDDQ/2.
UPD44647366AF5-E22-FQ1-A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 450 MHz
- Write Cycle Time - Word, Page:
- 2.2ns
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-PBGA (13x15)
UPD44647366AF5-E22-FQ1-A FAQ
1.How can I place an order for UPD44647366AF5-E22-FQ1-A through Aetrix?
Please submit a Request for Quotation (RFQ) for UPD44647366AF5-E22-FQ1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPD44647366AF5-E22-FQ1-A reliable?
The price and inventory of UPD44647366AF5-E22-FQ1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD44647366AF5-E22-FQ1-A is usually 5 days.
3.What payment methods are accepted for UPD44647366AF5-E22-FQ1-A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPD44647366AF5-E22-FQ1-A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPD44647366AF5-E22-FQ1-A?
UPD44647366AF5-E22-FQ1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPD44647366AF5-E22-FQ1-A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPD44647366AF5-E22-FQ1-A?
For technical support, including UPD44647366AF5-E22-FQ1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD44647366AF5-E22-FQ1-A requirements.
6.How does Aetrix verify that UPD44647366AF5-E22-FQ1-A is sourced from the original manufacturer or authorized distributors?
All UPD44647366AF5-E22-FQ1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD44647366AF5-E22-FQ1-A meets industry standards.
7.What is the process for return or replacement of UPD44647366AF5-E22-FQ1-A?
All UPD44647366AF5-E22-FQ1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPD44647366AF5-E22-FQ1-A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPD44647366AF5-E22-FQ1-A part is unused and in its original packaging.
Return procedure for UPD44647366AF5-E22-FQ1-A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
UPD44647366AF5-E22-FQ1-A Tags
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