Renesas UPD44647366AF5-E25-FQ1

Overview

UPD44647366AF5-E25-FQ1 from Renesas Electronics is a 2,097,152-word × 36-bit synchronous Quad Data Rate II+ (QDR II+) SRAM with 2.5 clock cycles read latency, 1.8 V core supply, HSTL interface, and 165-pin plastic BGA packaging. It delivers 400 MHz operation (2.5 ns cycle time), supports concurrent read/write via separate data ports, and integrates DLL/PLL, ODT, QVLD, and JTAG 1149.1 for high-speed networking buffer applications.

For engineers reviewing the UPD44647366AF5-E25-FQ1 datasheet, UPD44647366AF5-E25-FQ1 pinout, UPD44647366AF5-E25-FQ1 application, or UPD44647366AF5-E25-FQ1 equivalent, this page provides verified specifications, validated pin functions, confirmed QDR II+ timing behavior, and real-world use context for packet buffering in telecom infrastructure and FPGA co-processor memory subsystems.

Technical Context

This device implements true dual-port QDR II+ architecture with independent read and write data paths, enabling simultaneous 4-word burst transactions at 400 MHz. Its DLL/PLL circuit locks to K/K# input clocks to widen the output data valid window and support frequency scaling beyond 400 MHz.

The UPD44647366AF5-E25-FQ1 uses HSTL I/O with user-programmable output impedance (35–70 Ω) and on-die termination (ODT) configurable at power-on via the ODT pin. It features echo clocks (CQ/CQ#) edge-aligned with Q outputs and QVLD for precise data validity indication-critical for deterministic timing in high-speed SerDes and switch fabric interfaces.

Key Specifications

Pinout & Package

UPD44647366AF5-E25-FQ1 is housed in a 165-pin plastic BGA (15 mm × 17 mm) with 0.8 mm ball pitch. Pin functions are defined per the μPD44647366A-A variant configuration (2M × 36 organization), including 19 address inputs (A), 36 bidirectional data I/Os (D0–D35/Q0–Q35), four byte-write controls (BW0#–BW3#), and dedicated QVLD, CQ/CQ#, ZQ, and ODT signals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II+ SRAM applications.

Compared with CY7C2663KV18-400BZXC, UPD44647366AF5-E25-FQ1 offers superior signal integrity via QVLD and standardized ODT control, while AS7C3256A-20JCIN lacks all QDR II+ features - making it unsuitable for any data-path replacement.

Availability

UPD44647366AF5-E25-FQ1 is available at Aetrix Electronics and suitable for telecom infrastructure, network processor subsystems, and high-speed test equipment requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant BGA packaging.

Supply support for UPD44647366AF5-E25-FQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The UPD44647366AF5-E25-FQ1 belongs to Renesas' QDR II+ SRAM product line, engineered specifically for deterministic, high-bandwidth memory interfacing in packet-switched networking and FPGA-accelerated systems.

FAQ

What is the exact memory organization and density of UPD44647366AF5-E25-FQ1?

UPD44647366AF5-E25-FQ1 is organized as 2,097,152 words × 36 bits, delivering 72 M-bit total density. This configuration is fixed and corresponds to the μPD44647366A-A family variant. The part uses 19 address lines (A0–A18) and supports 4-word burst reads/writes, making it ideal for wide-data-path applications like network packet buffering where 36-bit alignment matches common header+payload structures.

Does UPD44647366AF5-E25-FQ1 support both 1.5 V and 1.8 V I/O supply (VDDQ)?

Yes, UPD44647366AF5-E25-FQ1 supports VDDQ at either 1.5 ± 0.1 V or 1.8 ± 0.1 V, as specified in the QDR II+ standard. This dual-voltage flexibility allows system designers to optimize signal integrity and power consumption based on their PCB stackup and driver requirements. The core VDD remains fixed at 1.8 ± 0.1 V regardless of VDDQ selection.

How is On-Die Termination (ODT) configured on UPD44647366AF5-E25-FQ1?

ODT on UPD44647366AF5-E25-FQ1 is set exclusively at power-on: if the ODT pin is held HIGH before stable clock application, ODT activates with RTT = 0.6 × RQ (typically 150 Ω with 250 Ω ZQ resistor). If ODT is LOW or floating at power-on, termination remains disabled. The state cannot be changed dynamically during operation - this design ensures signal integrity stability in high-speed links.

What is the role of QVLD and how does it differ from traditional RDY signals?

QVLD on UPD44647366AF5-E25-FQ1 is an edge-aligned data valid indicator that asserts synchronously with the first valid output word at the CQ/CQ# rising edge. Unlike asynchronous RDY signals, QVLD requires no external timing calibration and eliminates setup/hold uncertainty in capture logic. It directly reflects the internal QDR II+ timing model, enabling reliable latch control in FPGA or ASIC receivers without added delay elements.

Can UPD44647366AF5-E25-FQ1 operate at frequencies lower than 400 MHz?

Yes, UPD44647366AF5-E25-FQ1 supports operation down to 190 MHz when the DLL/PLL is enabled, and lower frequencies with DLL# asserted LOW (bypass mode). However, AC/DC characteristics are only guaranteed across the full 190–400 MHz range when DLL# is HIGH and the DLL/PLL is locked. For robust timing margin in variable-frequency systems, maintaining DLL/PLL lock above 190 MHz is recommended.