Renesas UPD44647366AF5-E25X-FQ1

Overview

UPD44647366AF5-E25X-FQ1 from Renesas Electronics is a 2,097,152-word × 36-bit synchronous QDR II+ SRAM with 2.5 clock cycles read latency, HSTL interface, and 165-pin plastic BGA (15 × 17 mm) packaging. It operates at 1.8 V core supply, supports 400 MHz clock frequency (2.5 ns cycle time), and delivers concurrent read/write ports for high-bandwidth networking buffer applications.

For engineers reviewing the UPD44647366AF5-E25X-FQ1 datasheet, UPD44647366AF5-E25X-FQ1 pinout, UPD44647366AF5-E25X-FQ1 application, or UPD44647366AF5-E25X-FQ1 equivalent, key selection criteria include burst-aligned DDR timing, user-programmable ODT (105–210 Ω), QVLD data-valid signaling, DLL/PLL-enabled 400 MHz operation, and JTAG 1149.1 test access.

Technical Context

This device implements a true dual-port synchronous architecture with independent read and write data paths, enabling full 100% bus utilization during concurrent transactions. Its burst counter and echo clocks (CQ/CQ#) align output data edges precisely to K/K# rising edges, supporting deterministic timing in packet buffering and switching fabric designs.

The on-die termination (ODT) is statically configured at power-on via the ODT pin and terminates D0–D35 and BW0#–BW3# pins to VDDQ/VSS with RTT = 0.6 × RQ (RQ = 175–350 Ω). The DLL/PLL locks to K clock input (190–500 MHz range) and enables stable 400 MHz operation with 2.5-cycle read latency - fixed per device variant, not user-selectable.

Key Specifications

Pinout & Package

Package: 165-pin plastic BGA (15 mm × 17 mm, 0.8 mm pitch), RoHS-compliant, lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II+ SRAM applications.

Compared with CY7C2665KV18-400BZXC and AS7C362000B-400BIN, UPD44647366AF5-E25X-FQ1 provides unique QVLD signaling for simplified data capture timing and user-selectable ODT impedance - offering superior signal integrity control in high-speed, noise-sensitive switch fabric designs.

Availability

UPD44647366AF5-E25X-FQ1 is available at Aetrix Electronics and suitable for network packet buffering, switch fabric memory, and telecom line card memory requiring stable component supply, long-lifecycle support, and guaranteed RoHS-compliant sourcing.

Supply support for UPD44647366AF5-E25X-FQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The UPD44647366AF5-E25X-FQ1 belongs to Renesas' QDR II+ SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in networking and telecommunications equipment where deterministic DDR timing and signal integrity are critical.

FAQ

What is the exact memory organization and density of UPD44647366AF5-E25X-FQ1?

UPD44647366AF5-E25X-FQ1 is organized as 2,097,152 words × 36 bits, delivering a total density of 72 M-bit (9 MB). This configuration is optimized for 36-bit datapath systems such as network processors and switch ASICs requiring wide, burst-oriented memory access.

Does UPD44647366AF5-E25X-FQ1 support both 1.5 V and 1.8 V I/O supply voltages?

Yes, UPD44647366AF5-E25X-FQ1 supports VDDQ = 1.5 ± 0.1 V or 1.8 ± 0.1 V, allowing flexible integration into mixed-voltage systems. The core VDD remains fixed at 1.8 ± 0.1 V. System design must ensure VDDQ does not exceed VDD by more than 0.5 V during power-up/down sequences.

How is read latency configured on UPD44647366AF5-E25X-FQ1?

UPD44647366AF5-E25X-FQ1 has fixed 2.5 clock cycles read latency - it is not user-configurable. This variant is distinct from the 2.0-cycle version (e.g., UPD44647364AF5-E25X-FQ1) and cannot be changed via mode registers or pins.

What is the function of the QVLD pin on UPD44647366AF5-E25X-FQ1?

The QVLD pin on UPD44647366AF5-E25X-FQ1 is a synchronous data-valid indicator that asserts coincident with the first valid data output (Q0–Q35) in a read burst. It is edge-aligned with CQ/CQ# and eliminates reliance on echo-clock timing margins for reliable data capture.

Can the ODT setting on UPD44647366AF5-E25X-FQ1 be changed after power-on?

No. The ODT state (ON/OFF) of UPD44647366AF5-E25X-FQ1 is latched at power-on based on the logic level of the ODT pin and cannot be modified during operation. To enable ODT, ODT must be held HIGH before stable clock is applied; otherwise, it remains disabled.