Renesas UPD46184182BF1-E33Y-EQ1-A

Overview

UPD46184182BF1-E33Y-EQ1-A from Renesas Electronics is a 1,048,576-word × 18-bit synchronous double data rate (DDR II) SRAM with pipelined burst operation, HSTL interface, and PLL-based timing control. It operates at 300 MHz (3.3 ns cycle time) on a 1.8 V ±0.1 V core supply, supports −40°C to +85°C industrial temperature range, and is packaged in a 165-pin plastic BGA (13 × 15 mm). It serves as high-speed buffer memory in network packet processors and FPGA-based data acquisition systems requiring precise clock-aligned read/write bursts.

For engineers reviewing the UPD46184182BF1-E33Y-EQ1-A datasheet, UPD46184182BF1-E33Y-EQ1-A pinout, UPD46184182BF1-E33Y-EQ1-A application, or UPD46184182BF1-E33Y-EQ1-A equivalent, key selection considerations include its 2-word linear burst mode, user-programmable output impedance (35–70 Ω), echo clock (CQ/CQ#) for data valid timing, JTAG 1149.1 test port, and clock-stop capability with 20 μs recovery.

Technical Context

This DDR II SRAM uses full-CMOS six-transistor memory cells and integrates synchronous peripheral circuitry including a burst counter and PLL for wide output data valid window and frequency scalability. All inputs-address (A0), control (LD#, R/W#, BW0#/BW1#), and clocks (K/K#)-are registered on the rising edge of K and K#.

It delivers data synchronized to either C/C# output clocks (for flight-time matching and skew compensation) or, if C/C# are fixed HIGH, directly to K/K#. The device implements internally self-timed write control, supports HSTL Class I I/O standards, and provides ZQ calibration for output impedance matching via external resistor to ground.

Key Specifications

Pinout & Package

UPD46184182BF1-E33Y-EQ1-A is housed in a 165-pin plastic ball grid array (BGA) package measuring 13 mm × 15 mm with standard 0.8 mm pitch. Pin assignments follow top-view layout per datasheet page 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR II SRAM applications.

Compared with CY7C1551KV18-333BZC and IS45S16180B-33BLI, UPD46184182BF1-E33Y-EQ1-A uniquely combines ZQ-calibrated outputs, echo-clock timing feedback, and clock-stop power management - making it optimal for thermally constrained, high-integrity industrial and telecom systems where layout flexibility and deterministic timing are critical.

Availability

UPD46184182BF1-E33Y-EQ1-A is available at Aetrix Electronics and suitable for network packet buffering, FPGA-based data acquisition, telecom line card memory, and high-speed test equipment requiring stable component supply across industrial temperature ranges and long production lifecycles.

Supply support for UPD46184182BF1-E33Y-EQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT applications.

The μPD46184xx2B family was designed specifically for high-speed, low-latency synchronous memory applications in networking, test instrumentation, and FPGA co-processing - emphasizing DDR timing precision, industrial temperature resilience, and system-level signal integrity.

FAQ

What is the guaranteed operating temperature range for UPD46184182BF1-E33Y-EQ1-A?

The UPD46184182BF1-E33Y-EQ1-A is fully specified and tested for continuous operation from −40°C to +85°C ambient temperature. This industrial-grade rating is confirmed in the Ordering Information table (page 2) and DC Characteristics 2 section (page 14) of the datasheet, where IDD and ISB1 values are explicitly given for the "-E33Y" suffix variant under TA = −40 to 85°C conditions.

Does UPD46184182BF1-E33Y-EQ1-A support true DDR data transfers with separate read and write clocks?

No. UPD46184182BF1-E33Y-EQ1-A uses a single K/K# input clock pair for latching all inputs and a separate C/C# output clock pair for controlling data output timing. Read data is synchronized to C/C# rising edges; write data is registered on K/K# rising edges. The device does not implement independent read/write clock domains like DDR SDRAM - it is a synchronous SRAM with DDR I/O architecture.

How is output impedance calibrated on UPD46184182BF1-E33Y-EQ1-A?

Output impedance is calibrated via the ZQ pin: an external resistor (RQ) is connected from ZQ to ground, setting DQ, CQ, and CQ# driver impedance to 0.2 × RQ. With RQ = 175–350 Ω, the resulting output impedance is 35–70 Ω. Calibration occurs automatically every 20 μs after power-up and tracks supply voltage and temperature drift, eliminating manual trimming or fixed termination.

Can UPD46184182BF1-E33Y-EQ1-A operate without its internal PLL enabled?

Yes - pulling DLL# LOW disables the PLL, allowing operation at frequencies below 120 MHz using K/K# directly as timing references. However, AC/DC characteristics are not guaranteed in this mode, read latency changes to 1.0 clock cycle, and the device must be initialized with NOP cycles after power-up regardless. For full specification compliance, DLL# must be tied HIGH (e.g., to VDDQ via ≤10 kΩ).

What is the function of the CQ and CQ# pins on UPD46184182BF1-E33Y-EQ1-A?

CQ and CQ# are synchronous echo clock outputs tightly matched to DQ valid/hold timing - by design, their rising edges align with data transitions within ±0.1 ns. They provide a hardware-valid signal for downstream capture logic and remain active even when DQ is tristated or C/C# are stopped, enabling robust data strobing independent of main clock state.