Renesas UPD46184182BF1-E40-EQ1

Overview

UPD46184182BF1-E40-EQ1 from NEC Electronics (now Renesas) is a 1,048,576-word × 18-bit synchronous double data rate static RAM with pipelined DDR operation, HSTL interface, and 1.8 V core supply. It delivers 250 MHz clock frequency (4.0 ns cycle time), supports two-word burst reads/writes, and integrates PLL-based timing control for precise output data valid windows. It is used in high-speed networking buffers and FPGA co-processor memory subsystems requiring low-latency, wide-bit synchronous access.

For engineers reviewing the UPD46184182BF1-E40-EQ1 datasheet, UPD46184182BF1-E40-EQ1 pinout, UPD46184182BF1-E40-EQ1 application, or UPD46184182BF1-E40-EQ1 equivalent, key selection criteria include its 165-pin plastic BGA (13 × 15) package, HSTL Class I I/O compliance, user-programmable output impedance (35–70 Ω), clock-stop capability with 20 μs recovery, and JTAG 1149.1 test port support.

Technical Context

This DDR II SRAM uses full-CMOS six-transistor memory cells and synchronizes all inputs-including address, R/W#, LD#, and BW#-on the rising edges of complementary input clocks K and K#. Its internal burst counter and pipelined architecture enforce fixed two-tick linear bursts, eliminating external burst logic.

The device features dual-clock domain timing: K/K# register inputs and write data, while C/C# drive output data and echo clocks (CQ/CQ#) with matched flight time for skew-critical systems. A dedicated DLL# pin disables the PLL for low-frequency debug mode, altering read latency to 1.0 cycle without guaranteed AC/DC specs.

Key Specifications

Pinout & Package

165-pin plastic BGA (13 × 15 mm), top view, with index mark per package dimensions. Pin functions validated per R10DS0114EJ0200 Rev.2.00 datasheet.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous DDR SRAM applications.

Compared with CY7C1551KV18 and AS7C331024B, UPD46184182BF1-E40-EQ1 provides superior timing determinism via PLL-synchronized DDR operation, lower voltage operation, and on-die impedance tuning-making it optimal for new high-speed synchronous designs where jitter, power, and signal integrity are constrained.

Availability

UPD46184182BF1-E40-EQ1 is available at Aetrix Electronics and suitable for high-speed network packet buffering, FPGA co-processor memory, test equipment waveform capture, and industrial real-time controller cache applications requiring stable component supply and long-term industrial temperature support.

Supply support for UPD46184182BF1-E40-EQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly NEC Electronics) is a global semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The μPD46184xx2B family was designed specifically for high-bandwidth, low-latency synchronous memory applications in networking, test equipment, and FPGA-based accelerators-emphasizing DDR timing precision, HSTL compatibility, and industrial-grade reliability.

FAQ

What is the maximum guaranteed clock frequency for UPD46184182BF1-E40-EQ1?

The UPD46184182BF1-E40-EQ1 is rated for a maximum clock frequency of 250 MHz, corresponding to a 4.0 ns clock cycle time (TKHKH). This rating is guaranteed across the full industrial temperature range (−40°C to +85°C) and under specified supply and loading conditions per R10DS0114EJ0200 Rev.2.00. Operation above 250 MHz is not characterized or supported.

Does UPD46184182BF1-E40-EQ1 support true DDR (double data rate) operation on both rising and falling edges of K/K#?

No. The UPD46184182BF1-E40-EQ1 performs pipelined DDR operation but registers input data only on the rising edges of K and K#, not on both edges. Output data is synchronized to C/C# (or K/K# if C/C# are tied HIGH), delivering two words per clock cycle via burst sequencing-not edge-triggered double-rate sampling.

How is output impedance calibrated on UPD46184182BF1-E40-EQ1?

Output impedance calibration on UPD46184182BF1-E40-EQ1 is performed automatically via the ZQ pin. A resistor (RQ) is connected from ZQ to ground; the device sets DQ, CQ, and CQ# output impedance to 0.2 × RQ. Calibration occurs every 20 μs after power-up and tracks supply and temperature drift. Direct connection of ZQ to VDDQ minimizes output impedance.

Can UPD46184182BF1-E40-EQ1 operate without an external PLL or clock synthesizer?

Yes. The UPD46184182BF1-E40-EQ1 contains an integrated PLL for output timing control, but it can operate without external PLL support. When DLL# is held LOW, the PLL is disabled and the device runs in asynchronous timing mode with 1.0-cycle read latency-though AC/DC characteristics are not guaranteed in this mode.

What is the function of the CQ and CQ# pins on UPD46184182BF1-E40-EQ1?

The CQ and CQ# pins on UPD46184182BF1-E40-EQ1 are synchronous echo clock outputs whose rising edges are tightly matched (±0.1 ns) to the valid/hold windows of DQ output data. They serve as precise, jitter-reduced data-valid indicators usable by the receiving controller-even when C/C# are stopped-and remain active regardless of DQ tristate state.