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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas UPD46184185BF1-E33Y-EQ1-A

Name: UPD46184185BF1-E33Y-EQ1-A
Brand: Renesas
SKU: UPD46184185BF1-E33Y-EQ1-A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: UPD46184185BF1-E33Y-EQ1-A

Manufacturer:: Renesas

Category:: Memory

Package:: -

Datasheet:: UPD46184185BF1-E33Y-EQ1-A.pdf

Description:: DDR SRAM, 1MX18, 0.45NS

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Product details

Overview

UPD46184185BF1-E33Y-EQ1-A from NEC Electronics (now Renesas) is a 1,048,576-word × 18-bit synchronous DDR II SRAM with HSTL interface, 3.3 ns clock cycle time (300 MHz), 1.8 V core supply, and 165-pin plastic BGA (13 × 15) packaging. It supports pipelined double data rate operation, separate read/write data ports, and clock-stop capability with 20 μs recovery - deployed in high-speed networking line cards requiring deterministic burst memory access.

For engineers reviewing the UPD46184185BF1-E33Y-EQ1-A datasheet, UPD46184185BF1-E33Y-EQ1-A pinout, UPD46184185BF1-E33Y-EQ1-A application, or UPD46184185BF1-E33Y-EQ1-A equivalent, this page delivers verified specifications, validated pin functions, temperature-qualified timing behavior (−40°C to +85°C), and real-world DDR II SRAM selection guidance for synchronous burst memory subsystems.

Technical Context

This device implements a fully synchronous DDR architecture with dual input clocks (K/K#) latching address/control on K's rising edge and data on both K and K# edges. Its internal PLL enables wide output data valid windows and supports future frequency scaling up to 300 MHz while maintaining precise flight-time matching via dedicated C/C# output clocks and tightly coupled CQ/CQ# echo clocks.

The memory array uses full-CMOS six-transistor cells and integrates burst counters, independent read/write data paths, and user-programmable output impedance (35–70 Ω via ZQ pin). It features JTAG 1149.1 test access, clock-stop mode, and internally self-timed write control - all operating under strict HSTL Class I compliance with VREF = VDDQ/2 reference.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	1M × 18-bit (18 Mbit total density); enables 18-bit parallel data path without external width expansion
Clock Cycle Time	3.3 ns (300 MHz); defines minimum clock period for guaranteed DDR read/write burst timing
Core Supply Voltage	1.8 V ± 0.1 V; requires tight regulation to meet AC timing and PLL lock stability requirements
Operating Temperature	−40°C to +85°C; qualified for industrial-grade embedded systems and telecom infrastructure
Interface Standard	HSTL Class I (JEDEC); mandates VREF = VDDQ/2 and supports 1.5 V or 1.8 V VDDQ for signal integrity
Package	165-pin plastic BGA (13 × 15 mm); thermal resistance θ_ja = 13.2°C/W at 1 m/s airflow (4-layer PCB)
Output Impedance Control	User-programmable via ZQ pin (0.2 × R_Q, R_Q = 175–350 Ω to ground); enables dynamic bus termination calibration

Pinout & Package

Package: 165-pin plastic BGA (13 × 15 mm grid, ball pitch 0.8 mm), RoHS-compliant, lead-free finish.

Pin/Terminal	Circuit Role	Design Meaning
A[0:18]	Synchronous Address Input	Registered on K rising edge; defines 1M-word address space; ignored when LD# = HIGH (NOP)
D[0:17]	Synchronous Data Input	Latched on K and K# rising edges during WRITE; supports byte-write via BW0#/BW1#
Q[0:17]	Synchronous Data Output	Driven on C/C# rising edges (or K/K# if C/C# = HIGH); high-Z after 2.5 cycles of NOP
K, K#	Input Clock Pair	Registers all inputs on K rising edge; K# ideally 180° out-of-phase; defines DDR timing base
C, C#	Output Clock Pair	Controls output timing reference; C# rising edge clocks first data, C rising edge clocks second data
CQ, CQ#	Echo Clock Output	Tightly matched to Q outputs (±0.1 ns); provides hardware-valid indication independent of C/C# state
LD#, R, W#, BW0#, BW1#	Control Inputs	Load address and direction (R/W) on LD# low; BWx# selects 9-bit bytes for partial writes
VDD, VDDQ, VSS, VREF, ZQ, DLL#, TCK/TDI/TMS/TDO	Power, Reference & Test	VDD = 1.8 V core; VDDQ = 1.5/1.8 V I/O; VREF = VDDQ/2; ZQ calibrates output drive strength; DLL# disables PLL for debug

Key Features

Feature	Design Value
Pipelined DDR operation with 2-word burst	Enables one clock-cycle transaction size - reduces bus arbitration overhead in packet buffering applications
Separate read/write data ports (D[0:17]/Q[0:17])	Eliminates read-modify-write cycles; supports concurrent ingress/egress in switch fabric buffers
User-programmable output impedance (35–70 Ω)	Compensates for PCB trace impedance variation via ZQ resistor; maintains signal integrity across temperature/voltage
Integrated PLL with 20 μs lock time	Provides jitter-tolerant clock multiplication and wide data valid window - critical for 300 MHz DDR timing margin
Clock-stop mode with 20 μs resume latency	Permits dynamic power gating without losing state; meets low-power idle requirements in line-card controllers
JTAG 1149.1 test access port	Supports boundary-scan testing of BGA interconnects; TAP controller resets on power-up for reliable initialization

Applications

Telecom Line Card Buffering	High-Speed Packet Switching
Use Scenario: Storing incoming/outgoing Ethernet or SONET frames in carrier-grade routers before classification and forwarding. IC Role / Device Role / Timing Role: Dual-port DDR II SRAM acting as frame buffer with simultaneous read (from MAC) and write (to PHY) operations synchronized to system clock domain. Use Value: 18-bit width matches common PHY data buses; 300 MHz DDR throughput delivers 1.08 GB/s bandwidth - sufficient for 10Gbps line-rate buffering.	Use Scenario: Temporary storage of packet headers and payload fragments in multi-layer switching ASICs during cut-through or store-and-forward decisions. IC Role / Device Role / Timing Role: Burst-access memory providing low-latency, deterministic read-after-write response for header parsing pipelines. Use Value: 2-word burst and echo clocks (CQ/CQ#) reduce timing uncertainty; −40°C to +85°C rating ensures reliability in fanless chassis environments.
Industrial Real-Time Control	Test Equipment Data Capture
Use Scenario: Capturing sensor streams and actuator command histories in programmable logic controllers (PLCs) with deterministic jitter budgets. IC Role / Device Role / Timing Role: Synchronous memory interfacing directly to FPGA fabric via HSTL I/O, using K/K# and C/C# for precise clock domain crossing. Use Value: Clock-stop capability allows microsecond-level power management between sampling intervals; VDDQ flexibility (1.5/1.8 V) eases integration with mixed-voltage FPGAs.	Use Scenario: High-fidelity waveform acquisition in digital oscilloscopes and bit-error-rate testers where deep memory depth and timing repeatability are critical. IC Role / Device Role / Timing Role: DDR II SRAM serving as acquisition buffer, triggered by external event and read out via high-speed parallel bus. Use Value: 165-ball BGA offers compact footprint for dense channel-count instruments; ZQ-based impedance tuning maintains signal fidelity at 300 MHz sampling rates.

Telecom Line Card Buffering

High-Speed Packet Switching

Use Scenario: Storing incoming/outgoing Ethernet or SONET frames in carrier-grade routers before classification and forwarding.

IC Role / Device Role / Timing Role: Dual-port DDR II SRAM acting as frame buffer with simultaneous read (from MAC) and write (to PHY) operations synchronized to system clock domain.

Use Value: 18-bit width matches common PHY data buses; 300 MHz DDR throughput delivers 1.08 GB/s bandwidth - sufficient for 10Gbps line-rate buffering.

Use Scenario: Temporary storage of packet headers and payload fragments in multi-layer switching ASICs during cut-through or store-and-forward decisions.

IC Role / Device Role / Timing Role: Burst-access memory providing low-latency, deterministic read-after-write response for header parsing pipelines.

Use Value: 2-word burst and echo clocks (CQ/CQ#) reduce timing uncertainty; −40°C to +85°C rating ensures reliability in fanless chassis environments.

Industrial Real-Time Control

Test Equipment Data Capture

Use Scenario: Capturing sensor streams and actuator command histories in programmable logic controllers (PLCs) with deterministic jitter budgets.

IC Role / Device Role / Timing Role: Synchronous memory interfacing directly to FPGA fabric via HSTL I/O, using K/K# and C/C# for precise clock domain crossing.

Use Value: Clock-stop capability allows microsecond-level power management between sampling intervals; VDDQ flexibility (1.5/1.8 V) eases integration with mixed-voltage FPGAs.

Use Scenario: High-fidelity waveform acquisition in digital oscilloscopes and bit-error-rate testers where deep memory depth and timing repeatability are critical.

IC Role / Device Role / Timing Role: DDR II SRAM serving as acquisition buffer, triggered by external event and read out via high-speed parallel bus.

Use Value: 165-ball BGA offers compact footprint for dense channel-count instruments; ZQ-based impedance tuning maintains signal fidelity at 300 MHz sampling rates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous DDR SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1551KV18-333BZI	2M × 18-bit organization; 3.33 ns cycle time; 1.8 V core; 209-pin BGA; no ZQ calibration	Higher density but larger package; lacks output impedance tuning - requires external termination	Select when deeper memory depth is required and board layout accommodates larger BGA; verify HSTL compatibility with VREF sourcing
IS42S16160F-3BL	1M × 16-bit SDRAM (not SRAM); 3.3 V I/O; 54-pin TSOP; asynchronous refresh; no C/C# or CQ outputs	Fundamentally different architecture - requires DRAM controller, refresh logic, and higher latency	Choose only if cost sensitivity outweighs deterministic timing needs; not drop-in compatible due to protocol and pinout mismatch

Compared with UPD46184185BF1-E33Y-EQ1-A, CY7C1551KV18-333BZI offers greater capacity but sacrifices impedance adaptability and thermal envelope, while IS42S16160F-3BL introduces DRAM complexity and non-deterministic latency - making UPD46184185BF1-E33Y-EQ1-A optimal for jitter-critical, industrial-temperature burst-buffering.

Availability

UPD46184185BF1-E33Y-EQ1-A is available at Aetrix Electronics and suitable for telecom line card buffering, high-speed packet switching, and industrial real-time control applications requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for UPD46184185BF1-E33Y-EQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly NEC Electronics) is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The UPD46184185BF1-E33Y-EQ1-A belongs to Renesas' DDR II SRAM product line, engineered for high-bandwidth, low-latency synchronous memory applications in networking equipment and real-time embedded systems where deterministic timing and industrial temperature resilience are mandatory.

FAQ

What is the maximum guaranteed clock frequency for UPD46184185BF1-E33Y-EQ1-A?

The UPD46184185BF1-E33Y-EQ1-A is rated for 300 MHz operation with a 3.3 ns clock cycle time (TKHKH ≤ 3.3 ns). This specification is guaranteed over the full −40°C to +85°C operating range and includes margin for setup/hold timing, PLL lock stability, and HSTL signal integrity under worst-case voltage and process corners.

Does UPD46184185BF1-E33Y-EQ1-A support true dual-port operation with simultaneous read and write?

Yes, UPD46184185BF1-E33Y-EQ1-A implements physically separate read (Q[0:17]) and write (D[0:17]) data buses, enabling concurrent access without internal arbitration. However, it is not asynchronous dual-port: both operations remain synchronous to the K/K# clock and require proper LD# and R,W# sequencing per burst cycle.

How does the ZQ pin function in UPD46184185BF1-E33Y-EQ1-A, and what resistor value is recommended?

The ZQ pin on UPD46184185BF1-E33Y-EQ1-A calibrates output driver impedance to 0.2 × R_Q, where R_Q is an external resistor tied from ZQ to ground. For nominal 50 Ω bus termination, a 250 Ω resistor yields 50 Ω output drive; values between 175 Ω and 350 Ω (35–70 Ω output range) are supported. Calibration occurs automatically every 20 μs after power-up.

Can UPD46184185BF1-E33Y-EQ1-A operate without its PLL enabled?

Yes - asserting DLL# = LOW disables the PLL, allowing operation at frequencies below TKHKH (MAX.) for debug or low-speed validation. However, AC/DC characteristics are not guaranteed in this mode, read latency changes to 1.0 clock cycle, and timing margins shrink significantly. For production use, DLL# must be tied HIGH (e.g., to VDDQ via ≤10 kΩ).

What is the purpose of the CQ and CQ# pins on UPD46184185BF1-E33Y-EQ1-A?

CQ and CQ# are echo clock outputs on UPD46184185BF1-E33Y-EQ1-A, rising edges of which are tightly matched (±0.1 ns) to corresponding Q[0:17] data outputs. They provide hardware-level data-valid timing references for receiving logic - especially useful when C/C# are used as output clocks, eliminating need for external delay-matching circuits.

UPD46184185BF1-E33Y-EQ1-A Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

Programmable:: Not Verified

Memory Type:: -

Memory Format:: -

Technology:: -

Memory Size:: -

Memory Organization:: -

Memory Interface:: -

Clock Frequency:: -

Write Cycle Time - Word, Page:: -

Access Time:: -

Voltage - Supply:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

UPD46184185BF1-E33Y-EQ1-A FAQ

1.How can I place an order for UPD46184185BF1-E33Y-EQ1-A through Aetrix?

Please submit a Request for Quotation (RFQ) for UPD46184185BF1-E33Y-EQ1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPD46184185BF1-E33Y-EQ1-A reliable?

The price and inventory of UPD46184185BF1-E33Y-EQ1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD46184185BF1-E33Y-EQ1-A is usually 5 days.

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UPD46184185BF1-E33Y-EQ1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPD46184185BF1-E33Y-EQ1-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPD46184185BF1-E33Y-EQ1-A?

For technical support, including UPD46184185BF1-E33Y-EQ1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD46184185BF1-E33Y-EQ1-A requirements.

6.How does Aetrix verify that UPD46184185BF1-E33Y-EQ1-A is sourced from the original manufacturer or authorized distributors?

All UPD46184185BF1-E33Y-EQ1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD46184185BF1-E33Y-EQ1-A meets industry standards.

7.What is the process for return or replacement of UPD46184185BF1-E33Y-EQ1-A?

All UPD46184185BF1-E33Y-EQ1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPD46184185BF1-E33Y-EQ1-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPD46184185BF1-E33Y-EQ1-A part is unused and in its original packaging.

Return procedure for UPD46184185BF1-E33Y-EQ1-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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