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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas UPD46184185BF1-E40-EQ1-A

Name: UPD46184185BF1-E40-EQ1-A
Brand: Renesas
SKU: UPD46184185BF1-E40-EQ1-A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: UPD46184185BF1-E40-EQ1-A

Manufacturer:: Renesas

Category:: Memory

Package:: -

Datasheet:: UPD46184185BF1-E40-EQ1-A.pdf

Description:: DDR SRAM, 1MX18, 0.45NS

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Product details

Overview

UPD46184185BF1-E40-EQ1-A from NEC Electronics (now Renesas) is a 1,048,576-word × 18-bit synchronous double data rate static RAM with HSTL interface, 4.0 ns clock cycle time (250 MHz), 1.8 V core supply, and 165-pin plastic BGA (13 × 15) packaging. It delivers pipelined DDR read/write operations per cycle in high-speed networking and test equipment buffers.

For engineers reviewing the UPD46184185BF1-E40-EQ1-A datasheet, UPD46184185BF1-E40-EQ1-A pinout, UPD46184185BF1-E40-EQ1-A application, or UPD46184185BF1-E40-EQ1-A equivalent, this page provides verified timing parameters, burst control logic, echo clock synchronization, impedance-tunable outputs, and JTAG 1149.1 compliance for DDR II SRAM integration.

Technical Context

This device implements a dual-clock architecture: K/K# registers address/control/data on rising edges, while C/C# govern output timing with tightly matched CQ/CQ# echo clocks. Its internal PLL enables wide data valid windows and supports future frequency scaling up to 300 MHz.

It features separate read/write data ports, two-tick burst operation, user-programmable output impedance (35–70 Ω via ZQ), and internally self-timed write control. Clock-stop mode resumes normal operation within 20 μs, and DLL# allows PLL bypass for low-frequency debug.

Key Specifications

Parameter	Value and Actual Design Meaning
Organization	1M × 18-bit memory array - supports 18-bit parallel data paths without external width expansion.
Clock Cycle Time	4.0 ns - guarantees 250 MHz DDR operation with precise setup/hold timing margins.
Core Supply Voltage	1.8 ± 0.1 V - requires tight regulation; VDDQ must not exceed VDD during power-up/down.
Interface Standard	HSTL Class I - ensures signal integrity at high speeds with controlled-impedance outputs and VREF-referenced inputs.
Package	165-pin plastic BGA (13 × 15 mm) - surface-mount footprint compatible with standard reflow profiles.
Operating Temperature	0 °C to +70 °C - qualified for commercial/industrial ambient environments with thermal resistance θ_ja = 16.5 °C/W (4-layer board, still air).
JTAG Support	IEEE 1149.1 compliant TAP (TCK/TMS/TDI/TDO) - enables boundary-scan testing without functional interruption.

Pinout & Package

165-pin plastic BGA (13 × 15 mm grid, top view). Ball pitch: 0.8 mm. Index mark located at corner A1. Package meets JEDEC MO-245 standards.

Pin/Terminal	Circuit Role	Design Meaning
K, K#	Input clock pair	Registers all synchronous inputs (address, R/W#, LD#, BW#) on rising edges; 180° phase relationship required.
C, C#	Output clock pair	Controls output timing reference for Q0–Q17; C# aligns first data, C aligns second data in burst.
CQ, CQ#	Echo clock outputs	Tightly matched to Q outputs (±0.1 ns); used as data-valid indication independent of C/C# state.
A[0–18]	Address inputs	19-bit synchronous address bus; registered on K rising edge; ignored when LD# = HIGH (NOP).
D0–D17	Data inputs	18-bit bidirectional input bus; sampled on both K and K# rising edges during WRITE cycles.
Q0–Q17	Data outputs	18-bit output bus; driven synchronously to C/C# or K/K# depending on LD# and R/W# state.
LD#	Synchronous load	Active-low command initiating bus cycle definition (address + R/W direction); defines burst start.
R, W#	Read/Write control	Active-low write enable; HIGH = READ, LOW = WRITE; latched with LD# on K rising edge.
BW0#, BW1#	Byte write selects	Enable writing to D0–D8 (BW0#) or D9–D17 (BW1#); both LOW = full 18-bit write; both HIGH = no write.
ZQ	Impedance calibration	Connects to external resistor to ground (175–350 Ω) to tune Q/CQ/CQ# output impedance to 35–70 Ω.
VDD, VDDQ	Power supplies	VDD = 1.8 V core; VDDQ = 1.4–1.8 V I/O supply; must be sequenced (VSS → VDD/VDDQ → VREF → VIN).
VREF	Input reference	Nominally VDDQ/2; supplies reference for HSTL input buffers; must be stable before clock application.
DLL#	PLL disable	Active-low; disables PLL for low-frequency debug; normal operation requires DLL# = HIGH (tied to VDDQ ≤ 10 kΩ).
TCK, TMS, TDI, TDO	JTAG interface	IEEE 1149.1 test access port; operates at 1.8 V I/O level; TCK must be tied to VSS if unused.

Key Features

Feature	Design Value
Pipelined DDR operation	Enables one read or write transaction per clock cycle with 2-word burst, reducing controller overhead in high-throughput buffering.
Separate read/write data ports	Eliminates bus turnaround delay - concurrent read and write operations possible across different addresses with no arbitration latency.
User-programmable output impedance	ZQ pin allows dynamic impedance matching to PCB trace impedance (35–70 Ω), minimizing reflections without external termination resistors.
Integrated echo clock (CQ/CQ#)	Provides deterministic data-valid timing aligned to Q outputs (±0.1 ns), simplifying receiver capture window design in source-synchronous interfaces.
PLL-based wide data valid window	Extends output data hold time and relaxes flight-time matching requirements between clock and data nets in high-speed layouts.
Clock-stop capability	Enters low-power state with zero current draw on clocks; resumes full functionality within 20 μs after clock restart - ideal for burst-mode systems.

Applications

High-Speed Test Equipment Memory Buffer	Network Packet Buffer in Switch ASIC Interfaces
Use Scenario: Captures and temporarily stores high-rate packet streams from multi-gigabit Ethernet PHYs before classification and forwarding. IC Role / Device Role / Timing Role: Acts as a synchronous, low-latency, burst-access FIFO buffer interfacing directly with switch fabric controllers using HSTL signaling. Use Value: 18-bit width matches common packet header widths; 250 MHz DDR throughput supports ≥900 MB/s sustained bandwidth with deterministic 2-cycle read latency.	Use Scenario: Stores waveform samples and stimulus patterns in automated test equipment (ATE) during real-time digital pattern generation and acquisition. IC Role / Device Role / Timing Role: Serves as a dual-port, burst-capable memory bank synchronized to system clock and echo clock for precise timing alignment. Use Value: Separate D/Q buses and echo clocks eliminate setup/hold uncertainty; 4.0 ns cycle time enables sub-4 ns sampling resolution in pattern generators.
DDR II SRAM-Based Frame Buffer for Video Processing	Real-Time Signal Processing Data Cache
Use Scenario: Buffers uncompressed video frames between image sensor interface and FPGA-based scaler/compressor pipelines. IC Role / Device Role / Timing Role: Provides high-density, low-power, synchronous frame storage with separate read/write ports to avoid contention during simultaneous capture and encode. Use Value: 1M × 18 organization supports 16-bit pixel formats; HSTL I/O ensures clean transitions at 250 MHz; clock-stop reduces idle power in variable-frame-rate systems.	Use Scenario: Holds intermediate FFT coefficients and filter taps in radar or communications baseband processors requiring rapid memory access. IC Role / Device Role / Timing Role: Functions as a low-latency, burst-optimized scratchpad memory accessed by DSP cores via synchronous address/data buses. Use Value: Two-tick burst minimizes address strobe overhead; self-timed write control eliminates external wait-state logic; 1.8 V supply lowers active power vs. 3.3 V SRAMs.

High-Speed Test Equipment Memory Buffer

Network Packet Buffer in Switch ASIC Interfaces

Use Scenario: Captures and temporarily stores high-rate packet streams from multi-gigabit Ethernet PHYs before classification and forwarding.

IC Role / Device Role / Timing Role: Acts as a synchronous, low-latency, burst-access FIFO buffer interfacing directly with switch fabric controllers using HSTL signaling.

Use Value: 18-bit width matches common packet header widths; 250 MHz DDR throughput supports ≥900 MB/s sustained bandwidth with deterministic 2-cycle read latency.

Use Scenario: Stores waveform samples and stimulus patterns in automated test equipment (ATE) during real-time digital pattern generation and acquisition.

IC Role / Device Role / Timing Role: Serves as a dual-port, burst-capable memory bank synchronized to system clock and echo clock for precise timing alignment.

Use Value: Separate D/Q buses and echo clocks eliminate setup/hold uncertainty; 4.0 ns cycle time enables sub-4 ns sampling resolution in pattern generators.

DDR II SRAM-Based Frame Buffer for Video Processing

Real-Time Signal Processing Data Cache

Use Scenario: Buffers uncompressed video frames between image sensor interface and FPGA-based scaler/compressor pipelines.

IC Role / Device Role / Timing Role: Provides high-density, low-power, synchronous frame storage with separate read/write ports to avoid contention during simultaneous capture and encode.

Use Value: 1M × 18 organization supports 16-bit pixel formats; HSTL I/O ensures clean transitions at 250 MHz; clock-stop reduces idle power in variable-frame-rate systems.

Use Scenario: Holds intermediate FFT coefficients and filter taps in radar or communications baseband processors requiring rapid memory access.

IC Role / Device Role / Timing Role: Functions as a low-latency, burst-optimized scratchpad memory accessed by DSP cores via synchronous address/data buses.

Use Value: Two-tick burst minimizes address strobe overhead; self-timed write control eliminates external wait-state logic; 1.8 V supply lowers active power vs. 3.3 V SRAMs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous DDR SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1551KV18-250BZI	256K × 36 organization, 2.5 V core, QDR-II interface (not DDR), 250 MHz, 209-pin BGA	Supports quad-data-rate reads but lacks echo clock and separate C/C# timing control	Choose for higher density and QDR protocol compatibility; avoid if echo clock synchronization or DDR timing model is required.
IS42S16160F-6BL	1M × 16 SDRAM (not SRAM), 3.3 V, 166 MHz, 54-pin TSOP; requires refresh and complex controller	Lower cost and density but introduces latency variability and refresh overhead	Choose only for cost-sensitive, non-real-time applications where deterministic latency is not critical.

Compared with CY7C1551KV18-250BZI and IS42S16160F-6BL, UPD46184185BF1-E40-EQ1-A offers guaranteed zero-refresh, fixed 2-cycle latency, echo-clock–based timing closure, and 1.8 V operation - making it uniquely suitable for deterministic high-speed buffering where jitter tolerance and power efficiency are prioritized over raw density or legacy interface support.

Availability

UPD46184185BF1-E40-EQ1-A is available at Aetrix Electronics and suitable for high-speed test equipment memory buffers, network packet buffers in switch ASIC interfaces, and real-time signal processing data caches requiring stable component supply, long-term lifecycle support, and consistent electrical performance across production lots.

Supply support for UPD46184185BF1-E40-EQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation (formerly NEC Electronics) is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The μPD46184xxB family was designed specifically for high-bandwidth, low-latency synchronous buffering in test instrumentation, communications infrastructure, and real-time digital systems demanding deterministic DDR timing and robust signal integrity.

FAQ

What is the maximum guaranteed clock frequency for UPD46184185BF1-E40-EQ1-A?

The UPD46184185BF1-E40-EQ1-A is rated for a 4.0 ns clock cycle time, corresponding to a maximum guaranteed operating frequency of 250 MHz under specified conditions (TA = 0 to +70°C, VDD = 1.8 ± 0.1 V). While the -E33 variant supports 300 MHz, the -E40 suffix explicitly denotes the 250 MHz grade with relaxed AC timing margins for improved stability and lower power consumption.

Does UPD46184185BF1-E40-EQ1-A require an external PLL or clock synthesizer?

No. The UPD46184185BF1-E40-EQ1-A integrates an on-die PLL that locks to the K input clock and generates internal timing for wide data valid windows. External clock synthesis is unnecessary - only a clean, low-jitter K/K# differential clock (≤0.2 ns peak-to-peak jitter) is required. DLL# can disable the PLL for debug, but normal operation assumes DLL# = HIGH.

How does the ZQ pin function in UPD46184185BF1-E40-EQ1-A, and what resistor value should be used?

The ZQ pin in UPD46184185BF1-E40-EQ1-A calibrates output driver impedance by referencing an external resistor to ground. A 200 Ω resistor yields ~40 Ω output impedance (0.2 × RQ); 175–350 Ω range supports 35–70 Ω tuning. The device performs automatic recalibration every 20 μs after power-up to compensate for voltage/temperature drift. Direct connection to VDDQ minimizes impedance.

Can UPD46184185BF1-E40-EQ1-A operate with C and C# tied HIGH?

Yes. When C and C# are fixed HIGH, the UPD46184185BF1-E40-EQ1-A uses K and K# as the output timing reference instead. All Q outputs and CQ/CQ# remain functional, but the data valid window becomes narrower and less tolerant of flight-time skew. This mode is acceptable for short-trace, low-jitter layouts but forfeits the primary advantage of the echo clock architecture.

What is the purpose of the LD# and R, W# signals in UPD46184185BF1-E40-EQ1-A's bus protocol?

In UPD46184185BF1-E40-EQ1-A, LD# (active-low synchronous load) initiates each bus cycle by latching the address and R/W direction on the next K rising edge. R, W# then determines operation type: HIGH = READ, LOW = WRITE. Both signals are registered synchronously to K, enabling precise, predictable burst control without asynchronous handshaking or wait states.

UPD46184185BF1-E40-EQ1-A Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

Programmable:: Not Verified

Memory Type:: -

Memory Format:: -

Technology:: -

Memory Size:: -

Memory Organization:: -

Memory Interface:: -

Clock Frequency:: -

Write Cycle Time - Word, Page:: -

Access Time:: -

Voltage - Supply:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

UPD46184185BF1-E40-EQ1-A FAQ

1.How can I place an order for UPD46184185BF1-E40-EQ1-A through Aetrix?

Please submit a Request for Quotation (RFQ) for UPD46184185BF1-E40-EQ1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPD46184185BF1-E40-EQ1-A reliable?

The price and inventory of UPD46184185BF1-E40-EQ1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD46184185BF1-E40-EQ1-A is usually 5 days.

3.What payment methods are accepted for UPD46184185BF1-E40-EQ1-A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPD46184185BF1-E40-EQ1-A transactions.

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4.How is shipping managed for UPD46184185BF1-E40-EQ1-A?

UPD46184185BF1-E40-EQ1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPD46184185BF1-E40-EQ1-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPD46184185BF1-E40-EQ1-A?

For technical support, including UPD46184185BF1-E40-EQ1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD46184185BF1-E40-EQ1-A requirements.

6.How does Aetrix verify that UPD46184185BF1-E40-EQ1-A is sourced from the original manufacturer or authorized distributors?

All UPD46184185BF1-E40-EQ1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD46184185BF1-E40-EQ1-A meets industry standards.

7.What is the process for return or replacement of UPD46184185BF1-E40-EQ1-A?

All UPD46184185BF1-E40-EQ1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPD46184185BF1-E40-EQ1-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPD46184185BF1-E40-EQ1-A part is unused and in its original packaging.

Return procedure for UPD46184185BF1-E40-EQ1-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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