Renesas UPD46184362BF1-E33-EQ1-A

Overview

UPD46184362BF1-E33-EQ1-A from NEC Electronics (now Renesas) is a 524,288-word × 36-bit synchronous double data rate (DDR II) SRAM with pipelined burst operation, HSTL interface, and 1.8 V core supply. It delivers 300 MHz clock frequency (3.3 ns cycle time), supports two-word linear burst reads/writes, and integrates PLL-based timing control for precise output data valid windows. It is used in high-speed networking packet buffers and FPGA co-processor memory subsystems requiring low-latency, wide-data-width synchronous storage.

For engineers reviewing the UPD46184362BF1-E33-EQ1-A datasheet, UPD46184362BF1-E33-EQ1-A pinout, UPD46184362BF1-E33-EQ1-A application, or UPD46184362BF1-E33-EQ1-A equivalent, key selection criteria include its 512K × 36 organization, 165-pin plastic BGA (13 × 15 mm) package, HSTL I/O compliance, user-programmable output impedance (35–70 Ω), and dual-clock architecture (K/K# input, C/C# output clocks) enabling flight-time matching in high-speed backplane interfaces.

Technical Context

This DDR II SRAM employs full-CMOS six-transistor memory cells and integrates synchronous peripheral circuitry including a burst counter, DLL/PLL timing engine, and JTAG 1149.1 test access port. All inputs are registered on the rising edges of complementary K and K# clocks, while output data is edge-aligned to C and C# clocks - enabling precise skew compensation between clock and data paths.

The device implements pipelined double data rate operation with two-tick burst transactions, internally self-timed write control, and clock-stop capability (20 μs recovery). Its HSTL Class I-compliant I/Os, programmable ZQ impedance tuning, and echo clocks (CQ/CQ#) tightly matched to DQ outputs support deterministic timing in 300 MHz system interfaces without external delay compensation.

Key Specifications

Pinout & Package

UPD46184362BF1-E33-EQ1-A is housed in a 165-pin plastic BGA (13 × 15 mm grid, 0.8 mm pitch) with exposed thermal pad. Pin functions are defined per top-view layout in datasheet Rev.2.00 Page 4.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous DDR SRAM applications.

Compared with CY7C1551KV18-333BZC and IS45S32800J-33BLI, UPD46184362BF1-E33-EQ1-A offers unique hardware-assisted timing control via echo clocks and on-die impedance tuning - reducing design risk in high-speed, multi-drop DDR memory buses where signal integrity is challenging.

Availability

UPD46184362BF1-E33-EQ1-A is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor memory, and industrial motion control applications requiring stable component supply, long-term lifecycle support, and guaranteed lead-free compliance.

Supply support for UPD46184362BF1-E33-EQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly NEC Electronics) is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The UPD46184362BF1-E33-EQ1-A belongs to Renesas' DDR II SRAM product line, designed specifically for high-speed, low-latency synchronous memory applications in communications infrastructure and real-time embedded systems where deterministic timing and signal integrity are critical.

FAQ

What is the memory organization and data width of UPD46184362BF1-E33-EQ1-A?

UPD46184362BF1-E33-EQ1-A is organized as 524,288 words × 36 bits (18 Mbit total), providing a native 36-bit data path. This configuration supports efficient handling of packet headers, video macroblocks, or multi-channel sensor data without bit-packing overhead. The part uses a 165-pin plastic BGA package with 0.8 mm pitch and 13 mm × 15 mm footprint.

Does UPD46184362BF1-E33-EQ1-A support HSTL I/O and what voltage levels apply?

Yes, UPD46184362BF1-E33-EQ1-A implements JEDEC HSTL Class I I/Os. It requires VDD = 1.8 V ± 0.1 V and VDDQ = 1.4–1.8 V, with VREF nominally at VDDQ/2. Input thresholds are centered around VREF (VIH = VREF + 0.1 V, VIL = VREF − 0.1 V), ensuring robust noise margins in high-speed digital systems.

How does the ZQ pin function in UPD46184362BF1-E33-EQ1-A and what external component is required?

The ZQ pin on UPD46184362BF1-E33-EQ1-A enables on-die output impedance calibration. It must be connected to a precision resistor (RQ) to ground, where DQ/CQ output impedance is set to 0.2 × RQ. For 50 Ω bus matching, a 250 Ω resistor is used. The device performs automatic recalibration every 20 μs after power-up to compensate for voltage/temperature drift.

What timing architecture does UPD46184362BF1-E33-EQ1-A use for DDR data output alignment?

UPD46184362BF1-E33-EQ1-A uses a dual-clock architecture: K/K# clocks register inputs, while C/C# clocks define output timing. Data is launched aligned to C/C# rising edges, and echo clocks CQ/CQ# are hardware-matched to DQ outputs (±0.1 ns variation). This eliminates reliance on PCB trace length matching and simplifies timing closure in 300 MHz interfaces.

Is UPD46184362BF1-E33-EQ1-A compatible with JTAG boundary-scan testing?

Yes, UPD46184362BF1-E33-EQ1-A includes IEEE 1149.1-compliant JTAG test access port (TCK, TMS, TDI, TDO) operating at 1.8 V I/O level. It supports basic boundary-scan functionality for interconnect testing. TCK must be tied to VSS if JTAG is unused; TMS/TDI may be left unconnected. No TRST pin is provided - reset occurs on power-up or five consecutive TMS HIGH pulses.