Renesas UPD46185092BF1-E40-EQ1-A

Overview

UPD46185092BF1-E40-EQ1-A from NEC Electronics (now Renesas) is a 2,097,152-word × 9-bit synchronous Quad Data Rate II (QDR II) SRAM with 1.8 V core supply, 4.0 ns clock cycle time (250 MHz), HSTL interface, and 165-pin plastic BGA (13 × 15) packaging. It delivers concurrent read/write ports, burst-2 operation, and PLL-based output timing for high-bandwidth networking buffers.

For engineers reviewing the UPD46185092BF1-E40-EQ1-A datasheet, UPD46185092BF1-E40-EQ1-A pinout, UPD46185092BF1-E40-EQ1-A application, or UPD46185092BF1-E40-EQ1-A equivalent, key selection criteria include its QDR II dual-port architecture, 250 MHz DDR timing compliance, HSTL Class I I/O, user-programmable output impedance (35–70 Ω), and JTAG 1149.1 test access support.

Technical Context

This device implements a true synchronous dual-port QDR II interface: address/control inputs latch on K rising edge for reads and K# rising edge for writes; data outputs align to C/C# rising edges with echo clocks (CQ/CQ#) tightly matched to data valid windows. The integrated PLL enables wide data valid windows and supports future frequency scaling up to 300 MHz.

It features separate independent read and write data paths enabling concurrent transactions, internally self-timed write control, clock-stop capability (20 μs recovery), and byte-write select (BW0#) for selective 9-bit lane updates. All I/O uses HSTL signaling referenced to VREF = VDDQ/2, meeting JEDEC HSTL Class I standards.

Key Specifications

Pinout & Package

UPD46185092BF1-E40-EQ1-A is housed in a 165-pin plastic BGA (13 × 15 mm, 0.8 mm pitch) with exposed thermal pad. Pin functions are defined per top-view layout in datasheet page 3; all signals are synchronous and registered on K/K# rising edges.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C2663KV18-400BZC and AS7C3256A-15JCIN, UPD46185092BF1-E40-EQ1-A uniquely balances 250 MHz QDR II performance, 9-bit narrow bus efficiency, and commercial-temperature reliability in a mature 165-pin BGA-making it optimal for cost-constrained, high-throughput packet buffering where 18-bit width or asynchronous operation are unsuitable.

Availability

UPD46185092BF1-E40-EQ1-A is available at Aetrix Electronics and suitable for high-speed network switch buffers, telecom line card memory, baseband processor caches, and ATE pattern memory requiring stable component supply, long-lifecycle support, and verified QDR II timing compliance.

Supply support for UPD46185092BF1-E40-EQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation (formerly NEC Electronics) is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The UPD46185092BF1-E40-EQ1-A belongs to Renesas' QDR II SRAM product line, engineered specifically for high-bandwidth, low-latency packet buffering in networking infrastructure where deterministic dual-port DDR access and HSTL signal integrity are critical.

FAQ

What is the maximum guaranteed clock frequency for UPD46185092BF1-E40-EQ1-A?

The UPD46185092BF1-E40-EQ1-A is rated for 250 MHz operation with a 4.0 ns clock cycle time (TKHKH ≤ 4.0 ns). This is validated across 0 °C to +70 °C ambient temperature and 1.8 ± 0.1 V supply. While the -E33 variant supports 300 MHz, the -E40 suffix explicitly denotes the 250 MHz speed grade; exceeding this violates AC timing specifications.

Does UPD46185092BF1-E40-EQ1-A support true concurrent read and write operations?

Yes, UPD46185092BF1-E40-EQ1-A supports true concurrent read and write operations via independent read and write data ports. When R# and W# are asserted in the same clock cycle, the device executes a read from the address latched on K and a write to the address latched on K#, with no internal arbitration delay-enabling full-duplex memory access essential for switch fabric buffers.

How is output impedance controlled on UPD46185092BF1-E40-EQ1-A?

Output impedance on UPD46185092BF1-E40-EQ1-A is controlled via the ZQ pin: connecting an external resistor RQ from ZQ to ground sets Q, CQ, and CQ# output impedance to 0.2 × RQ. With RQ = 175–350 Ω, impedance ranges from 35–70 Ω. Direct connection to VDDQ minimizes impedance; ZQ must never be left floating or tied to VSS.

What is the role of C and C# pins on UPD46185092BF1-E40-EQ1-A?

The C and C# pins on UPD46185092BF1-E40-EQ1-A serve as user-controlled output timing references: C# rising edge clocks the first word of the 2-word burst, and C rising edge clocks the second word. If unused, C and C# must be tied HIGH to default output timing to K/K# edges; leaving them unconnected or toggling them unpredictably violates timing guarantees.

Is UPD46185092BF1-E40-EQ1-A compatible with JTAG boundary-scan testing?

Yes, UPD46185092BF1-E40-EQ1-A integrates a IEEE 1149.1-compliant test access port (TAP) with TCK, TMS, TDI, and TDO pins. All JTAG signals operate at 1.8 V I/O level. For non-JTAG use, TMS and TDI may be left unconnected, but TCK must be tied to VSS to prevent unintended test mode entry.