Renesas UPD46185094BF1-E40-EQ1-A

Overview

UPD46185094BF1-E40-EQ1-A from NEC Electronics (now Renesas) is a 2,097,152-word × 9-bit synchronous Quad Data Rate II (QDR II) SRAM with 4-word burst operation, HSTL interface, and 1.8 V core supply. It delivers 250 MHz clock frequency (4.0 ns cycle time), supports concurrent read/write ports, and is packaged in a 165-pin plastic BGA (13 × 15 mm) for high-density memory subsystems in network packet buffers and FPGA co-processing.

For engineers reviewing the UPD46185094BF1-E40-EQ1-A datasheet, UPD46185094BF1-E40-EQ1-A pinout, UPD46185094BF1-E40-EQ1-A application, or UPD46185094BF1-E40-EQ1-A equivalent, key selection criteria include its 2M × 9 organization, dual-clock (K/K# input, C/C# output) timing architecture, user-programmable 35–70 Ω output impedance, JTAG 1149.1 test port, and clock-stop capability with 20 μs recovery.

Technical Context

This QDR II SRAM uses full-CMOS six-transistor memory cells and integrates synchronous peripheral circuitry including a burst counter, PLL for output data window widening, and independent read/write data paths. All address, control, and data inputs are registered on the rising edge of K and K#, enabling precise DDR timing without external latch logic.

The device implements 4-tick burst addressing to reduce address bus frequency, supports HSTL Class I I/O with VREF-referenced inputs, and features echo clocks (CQ/CQ#) tightly matched to output data edges for reliable capture at the receiver. Its DLL# pin allows PLL bypass during system debug without guaranteed AC/DC performance.

Key Specifications

Pinout & Package

Package: 165-pin plastic BGA (13 mm × 15 mm, 0.8 mm pitch), lead-free, RoHS-compliant. Pin layout optimized for signal integrity with dedicated VDDQ/VSS planes and distributed power/ground balls.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C2665KV18-400BZXC and AS7C3256B-15JIN, the UPD46185094BF1-E40-EQ1-A offers optimal balance of 9-bit parity support, 250 MHz QDR II performance, and low-power standby-making it uniquely suitable for space-constrained telecom and networking buffers requiring deterministic latency and minimal board area.

Availability

UPD46185094BF1-E40-EQ1-A is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processing memory, telecom baseband processing, and high-speed test equipment requiring stable component supply across extended temperature ranges (0 to 70°C).

Supply support for UPD46185094BF1-E40-EQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation (formerly NEC Electronics) is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The UPD46185094BF1-E40-EQ1-A belongs to Renesas' QDR II SRAM product line, engineered specifically for high-throughput, low-latency memory subsystems in networking infrastructure and FPGA-accelerated computing where concurrent access and precise timing are critical.

FAQ

What is the memory organization and total density of the UPD46185094BF1-E40-EQ1-A?

The UPD46185094BF1-E40-EQ1-A is organized as 2,097,152 words × 9 bits, delivering a total density of 18 Mbit. This 9-bit configuration supports 8-bit data plus parity for error detection in mission-critical applications such as telecom baseband processing and network switching. The device uses a synchronous QDR II architecture with fixed 4-word burst addressing.

Does the UPD46185094BF1-E40-EQ1-A support concurrent read and write operations?

Yes, the UPD46185094BF1-E40-EQ1-A features physically separate read and write data ports, enabling true concurrent transactions. While read and write commands cannot be initiated on the same clock edge (read takes precedence), the architecture allows overlapping read and write bursts-essential for FIFO and buffer applications in packet-switching hardware and FPGA co-processing systems.

What are the power supply requirements and sequencing constraints for the UPD46185094BF1-E40-EQ1-A?

The UPD46185094BF1-E40-EQ1-A requires VDD = 1.8 ± 0.1 V (core) and VDDQ = 1.4–1.8 V (I/O). Power-up must follow strict sequencing: VSS → VDD/VDDQ (simultaneous, ΔV ≤ 0.5 V) → VREF → VIN. Power-down reverses this order. Failure to comply risks undefined operation or initialization failure, especially during PLL lock acquisition.

How does the ZQ pin function in the UPD46185094BF1-E40-EQ1-A, and what external component is required?

The ZQ pin on the UPD46185094BF1-E40-EQ1-A enables output impedance calibration. It must be connected to a precision resistor (RQ = 175–350 Ω) tied to ground; the device sets Q, CQ, and CQ# driver impedance to 0.2 × RQ. Direct connection to VDDQ minimizes impedance; grounding or leaving ZQ floating is prohibited. Calibration occurs automatically every 20 μs after power-up.

Is the UPD46185094BF1-E40-EQ1-A compatible with JTAG boundary-scan testing?

Yes, the UPD46185094BF1-E40-EQ1-A includes a fully compliant IEEE 1149.1 JTAG test access port (TMS, TDI, TCK, TDO) operating at 1.8 V I/O level. TCK must be tied to VSS if JTAG is unused; TMS/TDI may be left unconnected. This enables in-system verification, interconnect testing, and programming of associated devices in complex PCB assemblies.