Renesas UPD46185182BF1-E40-EQ1-A

Overview

UPD46185182BF1-E40-EQ1-A from Renesas Electronics is a 1,048,576-word × 18-bit synchronous quad data rate (QDR II) SRAM with 4.0 ns clock cycle time, 250 MHz operation, 1.8 V core supply, HSTL interface, and 165-pin plastic BGA (13 × 15) packaging. It delivers concurrent read/write ports, burst-2 DDR operation, and PLL-based output timing control for high-bandwidth networking buffers.

For engineers reviewing the UPD46185182BF1-E40-EQ1-A datasheet, UPD46185182BF1-E40-EQ1-A pinout, UPD46185182BF1-E40-EQ1-A application, or UPD46185182BF1-E40-EQ1-A equivalent, key selection considerations include its 1M × 18 organization, 250 MHz QDR-II timing compliance, HSTL Class I I/O, user-programmable output impedance (35–70 Ω), and JTAG 1149.1 test access support.

Technical Context

This QDR II SRAM uses dual-clock architecture: K/K# for address/control/data registration on rising edges, and C/C# for precise output data timing with echo clocks CQ/CQ#. Its internal burst counter enables two-word transactions per clock cycle, achieving 100% bus utilization in both read and write modes.

The device integrates a PLL for wide output data valid window and frequency scalability, supports clock-stop mode with 20 μs recovery, and features independent read/write ports enabling simultaneous access-critical for packet buffering in switch fabric and memory controller applications.

Key Specifications

Pinout & Package

165-pin plastic BGA (13 × 15 mm) package with bottom-side ball grid; mechanical index mark located at corner A1 per JEDEC MO-270B. Pin functions validated per Renesas R10DS0112EJ0200 Rev.2.00 datasheet Page 4.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C2663KV18 and 70V9289L15PF, UPD46185182BF1-E40-EQ1-A offers tighter VREF tolerance (±0.1 V), integrated ZQ calibration, and lower standby current (310 mA), making it optimal for cost-sensitive, thermally constrained, and power-aware designs where 250 MHz performance suffices.

Availability

UPD46185182BF1-E40-EQ1-A is available at Aetrix Electronics and suitable for network switch buffer memory, high-speed test equipment memory, baseband processor L2 cache, and industrial real-time controller buffer applications requiring stable component supply, long-term manufacturability, and guaranteed lead-free compliance.

Supply support for UPD46185182BF1-E40-EQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT applications.

The UPD46185182BF1-E40-EQ1-A belongs to Renesas' QDR II SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in networking, telecommunications, and test instrumentation systems demanding deterministic dual-port access and HSTL signal integrity.

FAQ

What is the maximum clock frequency supported by UPD46185182BF1-E40-EQ1-A?

The UPD46185182BF1-E40-EQ1-A is rated for 250 MHz operation with a 4.0 ns clock cycle time. This speed grade is validated across the full 0 °C to +70 °C operating temperature range and complies with QDR II timing specifications including setup/hold margins and burst-2 data validity windows. The device's PLL supports future scaling, but 250 MHz is the guaranteed maximum frequency for this specific speed bin.

Does UPD46185182BF1-E40-EQ1-A support true dual-port operation with simultaneous read and write?

Yes, UPD46185182BF1-E40-EQ1-A supports true concurrent read and write operations via physically separate data paths: D[0:17] for input and Q[0:17] for output. Its architecture allows initiation of a READ cycle on R# while a WRITE cycle is active on W#, enabling full-duplex memory access essential for switch fabric and packet buffer applications.

How is output impedance calibrated on UPD46185182BF1-E40-EQ1-A?

Output impedance calibration on UPD46185182BF1-E40-EQ1-A is performed via the ZQ pin, which connects to an external 240 Ω resistor to VSS. This configures Q, CQ, and CQ# drivers for 50 Ω nominal output impedance (0.2 × RQ). Calibration occurs automatically every 20 μs after power-up and adapts to voltage/temperature drift, eliminating need for manual trimming or fixed series resistors.

What is the role of the DLL# pin on UPD46185182BF1-E40-EQ1-A?

The DLL# pin on UPD46185182BF1-E40-EQ1-A disables the internal PLL when driven LOW, allowing operation at frequencies below the minimum PLL lock range (120 MHz). In this mode, read latency reduces to 1 clock cycle, but AC/DC characteristics are not guaranteed. For all production operation, DLL# must be tied HIGH (e.g., to VDDQ via ≤10 kΩ) to enable full QDR II timing compliance.

Is UPD46185182BF1-E40-EQ1-A compatible with JTAG boundary scan testing?

Yes, UPD46185182BF1-E40-EQ1-A implements IEEE 1149.1 JTAG boundary scan with dedicated TMS, TDI, TCK, and TDO pins. It supports standard instruction register loading, data register access, and interconnect testing. Pins operate at 1.8 V I/O level; TCK must be tied to VSS if JTAG is unused, and TDO should be pulled up to VDD when externally driven.