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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas UPD46185184BF1-E40Y-EQ1-A

Name: UPD46185184BF1-E40Y-EQ1-A
Brand: Renesas
SKU: UPD46185184BF1-E40Y-EQ1-A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: UPD46185184BF1-E40Y-EQ1-A

Manufacturer:: Renesas

Category:: Memory

Package:: -

Datasheet:: UPD46185184BF1-E40Y-EQ1-A.pdf

Description:: QDR SRAM, 1MX18, 0.45NS

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Product details

Overview

UPD46185184BF1-E40Y-EQ1-A from NEC Electronics (now Renesas) is a 1,048,576-word × 18-bit synchronous Quad Data Rate II (QDR II) SRAM with HSTL interface, 4-word burst operation, and 1.8 V core supply. It delivers 250 MHz clock frequency (4.0 ns cycle time), supports concurrent read/write ports, and operates across −40°C to +85°C for telecom switching fabric and high-speed packet buffer applications.

For engineers reviewing the UPD46185184BF1-E40Y-EQ1-A datasheet, UPD46185184BF1-E40Y-EQ1-A pinout, UPD46185184BF1-E40Y-EQ1-A application, or UPD46185184BF1-E40Y-EQ1-A equivalent, key selection criteria include its dual-port QDR-II timing, 165-pin plastic BGA (13×15) package, user-programmable output impedance (35–70 Ω), PLL-enabled clock scaling, and JTAG 1149.1 test access.

Technical Context

This QDR II SRAM uses full-CMOS six-transistor memory cells and integrates synchronous peripheral circuitry including a burst counter, DLL/PLL for output timing alignment, and independent read/write data paths. All control and address inputs are registered on the rising edge of K/K#, while data I/O is synchronized to C/C# or K/K# depending on configuration.

The device implements 4-tick burst addressing, supports byte-write via BW0#/BW1# signals, provides echo clocks (CQ/CQ#) tightly matched to output data, and features clock-stop capability with 20 μs recovery. Its HSTL Class I I/O meets JEDEC standards with VREF = VDDQ/2 reference.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	1,048,576 words × 18 bits (18 M-bit total density)
Clock Frequency	250 MHz - enables 500 MT/s effective data rate per port
Cycle Time	4.0 ns - defines minimum clock period for reliable DDR timing margins
Supply Voltage	1.8 V ± 0.1 V core (VDD); isolated 1.5 V nominal VDDQ for I/O buffers
Operating Temperature	−40°C to +85°C - qualified for industrial and telecom infrastructure environments
Interface Standard	HSTL Class I - ensures signal integrity at 250 MHz with controlled-impedance outputs
Package	165-pin plastic BGA (13 mm × 15 mm, 1.0 mm pitch)

Pinout & Package

UPD46185184BF1-E40Y-EQ1-A is housed in a 165-pin plastic BGA (13 × 15 array, 1.0 mm pitch) with exposed thermal pad. Pin functions follow JEDEC-standard HSTL I/O assignment and include dedicated input clocks (K/K#), output clocks (C/C#), echo clocks (CQ/CQ#), 18-bit bidirectional data (D0–D17/Q0–Q17), 18-bit address (A0–A17), control lines (R#, W#, BW0#, BW1#), power (VDD, VDDQ, VSS), reference (VREF), impedance tuning (ZQ), and JTAG (TCK/TMS/TDI/TDO).

Pin/Terminal	Circuit Role	Design Meaning
K, K#	Input clock pair	Registers all control/address on K rising edge; registers write data on both K and K# rising edges
C, C#	Output clock pair	Controls output timing reference: C# rising edge for 1st/3rd data, C rising edge for 2nd/4th data
CQ, CQ#	Echo clock outputs	Tightly matched to Q outputs; used as data-valid indication independent of tristate state
R#, W#	Read/Write command inputs	Synchronous active-low commands; initiate burst read or write on next K rising edge
BW0#, BW1#	Byte write enable inputs	Select 9-bit subwords for partial writes: 00 = full 18-bit, 01 = D0–D8, 10 = D9–D17, 11 = no write
VREF	HSTL input reference	Nominally VDDQ/2; sets threshold for all address/control input buffers
ZQ	Output impedance calibration	Connects to external resistor to ground to set Q/CQ/CQ# output impedance to 0.2 × RQ
TCK, TMS, TDI, TDO	JTAG 1149.1 interface	1.8 V I/O-level test access port for boundary scan and debug

Key Features

Feature	Design Value
Concurrent read/write ports	Enables simultaneous access to same memory array without arbitration delay - critical for pipeline buffering
4-word burst addressing	Reduces address bus frequency by 4× versus single-word access - lowers routing complexity and EMI
User-programmable output impedance	35–70 Ω range via ZQ resistor - eliminates need for external series termination resistors
PLL-assisted output timing	Widens data valid window and supports future frequency scaling beyond 250 MHz
Clock-stop mode with 20 μs recovery	Allows dynamic power gating without system reset - preserves data and state during idle periods
JTAG 1149.1 compliance	Enables production test, in-system debug, and boundary-scan verification without custom test fixtures

Applications

Telecom Switching Fabric	Network Packet Buffer
Use Scenario: Line card in carrier-grade Ethernet switch performing header inspection and forwarding decision lookup. IC Role / Device Role / Timing Role: Dual-port QDR II SRAM serves as deep packet buffer with separate read/write ports feeding ingress/egress pipelines. Use Value: 250 MHz DDR operation delivers 900 MB/s sustained bandwidth per port, enabling line-rate 10Gbps packet processing without stall cycles.	Use Scenario: Buffering variable-length packets in a 40Gbps router ASIC datapath. IC Role / Device Role / Timing Role: High-density 18-bit-wide QDR II SRAM stores packet payloads with burst-aligned access to minimize latency jitter. Use Value: 4-word burst reduces address transition count by 75%, lowering timing closure risk on dense backplane PCBs.
Baseband Processing Unit	High-Speed Test Equipment
Use Scenario: Real-time channel estimation and precoding in massive MIMO 5G base station radios. IC Role / Device Role / Timing Role: Low-latency SRAM acts as coefficient cache for FFT/IFFT engines, accessed concurrently by multiple DSP cores. Use Value: Concurrent read/write capability allows one core to load new coefficients while another reads prior set - eliminating pipeline bubbles.	Use Scenario: Pattern memory in automated test equipment (ATE) generating high-speed digital stimulus waveforms. IC Role / Device Role / Timing Role: QDR II SRAM stores multi-gigabit test vectors with precise timing alignment via CQ/CQ# echo clocks. Use Value: Echo clocks eliminate flight-time skew between data and strobe, enabling <10 ps setup/hold margin at 250 MHz.

Telecom Switching Fabric

Network Packet Buffer

Use Scenario: Line card in carrier-grade Ethernet switch performing header inspection and forwarding decision lookup.

IC Role / Device Role / Timing Role: Dual-port QDR II SRAM serves as deep packet buffer with separate read/write ports feeding ingress/egress pipelines.

Use Value: 250 MHz DDR operation delivers 900 MB/s sustained bandwidth per port, enabling line-rate 10Gbps packet processing without stall cycles.

Use Scenario: Buffering variable-length packets in a 40Gbps router ASIC datapath.

IC Role / Device Role / Timing Role: High-density 18-bit-wide QDR II SRAM stores packet payloads with burst-aligned access to minimize latency jitter.

Use Value: 4-word burst reduces address transition count by 75%, lowering timing closure risk on dense backplane PCBs.

Baseband Processing Unit

High-Speed Test Equipment

Use Scenario: Real-time channel estimation and precoding in massive MIMO 5G base station radios.

IC Role / Device Role / Timing Role: Low-latency SRAM acts as coefficient cache for FFT/IFFT engines, accessed concurrently by multiple DSP cores.

Use Value: Concurrent read/write capability allows one core to load new coefficients while another reads prior set - eliminating pipeline bubbles.

Use Scenario: Pattern memory in automated test equipment (ATE) generating high-speed digital stimulus waveforms.

IC Role / Device Role / Timing Role: QDR II SRAM stores multi-gigabit test vectors with precise timing alignment via CQ/CQ# echo clocks.

Use Value: Echo clocks eliminate flight-time skew between data and strobe, enabling <10 ps setup/hold margin at 250 MHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Cypress CY7C2663KV18	Same 1M×18 organization, 250 MHz, 165-pin BGA; requires external VREF generator (not internal VDDQ/2)	Lacks integrated VREF - needs external resistor divider; identical timing and pinout	Choose if existing design already sources VREF externally and board layout cannot accommodate VREF decoupling changes.
IDT 72T36115L10PF	1M×18 QDR II+ (enhanced), 300 MHz capable, same package; higher IDD (710 mA vs 650 mA @ −40°C to +85°C)	Supports faster clock rates but draws more current; not drop-in due to different AC timing parameters	Choose when future frequency headroom is required and thermal budget allows higher power dissipation.

Compared with CY7C2663KV18 and 72T36115L10PF, UPD46185184BF1-E40Y-EQ1-A offers integrated VREF generation and lower standby current (490 mA vs 520 mA), making it optimal for thermally constrained telecom modules where layout simplicity and power efficiency are prioritized over maximum clock speed.

Availability

UPD46185184BF1-E40Y-EQ1-A is available at Aetrix Electronics and suitable for telecom switching fabric, network packet buffer, and baseband processing unit applications requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for UPD46185184BF1-E40Y-EQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly NEC Electronics) is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The UPD46185184BF1-E40Y-EQ1-A belongs to Renesas' QDR II SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in networking and telecom infrastructure where deterministic timing and concurrent access are mandatory.

FAQ

What is the operating temperature range for UPD46185184BF1-E40Y-EQ1-A?

UPD46185184BF1-E40Y-EQ1-A is rated for industrial temperature operation from −40°C to +85°C, as confirmed by the "E40Y" suffix in the part number and validated in DC Characteristics 2 (Page 18 of R10DS0113EJ0200). This makes it suitable for base station radios, carrier switches, and other infrastructure equipment deployed in uncontrolled environments.

Does UPD46185184BF1-E40Y-EQ1-A support true concurrent read and write operations?

Yes, UPD46185184BF1-E40Y-EQ1-A implements fully independent read and write data ports with separate address and control paths. The block diagram (Page 10) and truth table (Page 12) confirm that read and write state machines operate simultaneously - enabling one port to read while the other writes to the same memory array without contention or arbitration delay.

How is output impedance calibrated on UPD46185184BF1-E40Y-EQ1-A?

UPD46185184BF1-E40Y-EQ1-A uses the ZQ pin for output impedance matching. A resistor (RQ) is connected from ZQ to ground, setting Q, CQ, and CQ# output impedance to 0.2 × RQ. With RQ = 175–350 Ω, this yields 35–70 Ω programmable drive strength - eliminating need for external series termination resistors and simplifying PCB layout.

What clocking scheme does UPD46185184BF1-E40Y-EQ1-A use for data output timing?

UPD46185184BF1-E40Y-EQ1-A uses dual clock pairs: K/K# for input registration and C/C# for output timing. Data outputs align to C# rising edge (1st/3rd words) and C rising edge (2nd/4th words). If C/C# are tied HIGH, outputs instead synchronize to K/K# - providing flexibility for systems where only one clock domain is available.

Is UPD46185184BF1-E40Y-EQ1-A compatible with JTAG boundary-scan testing?

Yes, UPD46185184BF1-E40Y-EQ1-A includes full IEEE 1149.1 JTAG test access port (TCK, TMS, TDI, TDO) with 1.8 V I/O levels. The pin description (Page 8) confirms compliance, and the device supports boundary-scan instruction register and data register access - enabling in-circuit test and debug without custom test hardware.

UPD46185184BF1-E40Y-EQ1-A Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

Programmable:: Not Verified

Memory Type:: -

Memory Format:: -

Technology:: -

Memory Size:: -

Memory Organization:: -

Memory Interface:: -

Clock Frequency:: -

Write Cycle Time - Word, Page:: -

Access Time:: -

Voltage - Supply:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

UPD46185184BF1-E40Y-EQ1-A FAQ

1.How can I place an order for UPD46185184BF1-E40Y-EQ1-A through Aetrix?

Please submit a Request for Quotation (RFQ) for UPD46185184BF1-E40Y-EQ1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPD46185184BF1-E40Y-EQ1-A reliable?

The price and inventory of UPD46185184BF1-E40Y-EQ1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD46185184BF1-E40Y-EQ1-A is usually 5 days.

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UPD46185184BF1-E40Y-EQ1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPD46185184BF1-E40Y-EQ1-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPD46185184BF1-E40Y-EQ1-A?

For technical support, including UPD46185184BF1-E40Y-EQ1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD46185184BF1-E40Y-EQ1-A requirements.

6.How does Aetrix verify that UPD46185184BF1-E40Y-EQ1-A is sourced from the original manufacturer or authorized distributors?

All UPD46185184BF1-E40Y-EQ1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD46185184BF1-E40Y-EQ1-A meets industry standards.

7.What is the process for return or replacement of UPD46185184BF1-E40Y-EQ1-A?

All UPD46185184BF1-E40Y-EQ1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPD46185184BF1-E40Y-EQ1-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPD46185184BF1-E40Y-EQ1-A part is unused and in its original packaging.

Return procedure for UPD46185184BF1-E40Y-EQ1-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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