Renesas UPD46185362BF1-E33-EQ1-A

Overview

UPD46185362BF1-E33-EQ1-A from NEC Electronics (now Renesas) is a 524,288-word × 36-bit synchronous Quad Data Rate II (QDR II) SRAM with 1.8 V core supply, 300 MHz clock operation (3.3 ns cycle time), HSTL interface, and 165-pin plastic BGA (13 × 15 mm) packaging. It delivers concurrent read/write ports, burst-2 DDR transactions, and PLL-based output timing for high-speed networking buffer applications.

For engineers reviewing the UPD46185362BF1-E33-EQ1-A datasheet, UPD46185362BF1-E33-EQ1-A pinout, UPD46185362BF1-E33-EQ1-A application, or UPD46185362BF1-E33-EQ1-A equivalent, key selection considerations include its 512K × 36 organization, dual-clock (K/K# and C/C#) timing architecture, user-programmable output impedance (35–70 Ω), JTAG 1149.1 test port, and clock-stop capability with 20 μs recovery.

Technical Context

The UPD46185362BF1-E33-EQ1-A implements a true dual-port QDR II architecture with physically separate read and write data paths, enabling simultaneous read and write operations without arbitration delay. Its burst-2 operation uses consecutive rising edges of K/K# for write address/data latching and C/C# for read data delivery, achieving 100% bus utilization.

Timing is governed by two independent clock pairs: K/K# synchronizes all inputs (address, control, write data), while C/C# controls output data and echo clocks (CQ/CQ#). A built-in PLL ensures wide data valid windows and supports future frequency scaling; DLL# disables the PLL for low-frequency debug mode (RL = 1.0 cycle).

Key Specifications

Pinout & Package

UPD46185362BF1-E33-EQ1-A is housed in a 165-pin plastic BGA (13 × 15 mm, 0.8 mm pitch) with standard top-view ball map. Pin functions are defined per the μPD46185362B datasheet Rev.2.00, Page 5.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with UPD46185362BF1-E33-EQ1-A, CY7C2663KV18 offers equivalent density and speed but requires impedance recalibration, while IDT 72T3652 extends frequency and temperature range without layout changes-making it a drop-in upgrade for harsh environments.

Availability

UPD46185362BF1-E33-EQ1-A is available at Aetrix Electronics and suitable for high-speed network switch buffers, telecom line card memory, and baseband processor cache applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for UPD46185362BF1-E33-EQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly NEC Electronics) is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The UPD46185362BF1-E33-EQ1-A belongs to Renesas' QDR II SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in networking and telecommunications infrastructure where deterministic timing and concurrent access are critical.

FAQ

What is the memory organization and density of the UPD46185362BF1-E33-EQ1-A?

The UPD46185362BF1-E33-EQ1-A is organized as 524,288 words × 36 bits, providing 18 Mbit total density. This configuration supports high-throughput data buffering in applications requiring wide data paths, such as network packet processing. Each word is accessed synchronously using 18 address lines (A0–A17), and the device implements burst-2 DDR operation to maximize bandwidth efficiency.

Does the UPD46185362BF1-E33-EQ1-A support concurrent read and write operations?

Yes, the UPD46185362BF1-E33-EQ1-A features physically separate read and write data ports, enabling true concurrent read and write transactions without arbitration delay. This dual-port architecture allows simultaneous access to memory-critical for real-time applications like switch fabric buffers where ingress and egress pipelines operate independently.

What clocking scheme does the UPD46185362BF1-E33-EQ1-A use for input and output timing?

The UPD46185362BF1-E33-EQ1-A uses two independent clock pairs: K/K# governs all input registration (address, control, write data), while C/C# controls output data and echo clocks (CQ/CQ#). This separation enables precise flight-time matching between clock and data, and allows users to tune output timing relative to receiving logic-essential for high-speed DDR signaling integrity.

How is output impedance controlled on the UPD46185362BF1-E33-EQ1-A?

Output impedance on the UPD46185362BF1-E33-EQ1-A is controlled via the ZQ pin, which connects to an external resistor to ground. The device sets Q, CQ, and CQ# driver impedance to 0.2 × RQ, allowing fine-tuning from 35 Ω to 70 Ω. This feature enables system-level impedance matching to PCB traces, minimizing reflections and ensuring signal integrity in high-speed memory interfaces.

What is the role of the DLL# pin on the UPD46185362BF1-E33-EQ1-A?

The DLL# pin on the UPD46185362BF1-E33-EQ1-A disables the internal PLL when driven LOW, permitting debug-mode operation at clock frequencies below the rated 300 MHz. In this mode, read latency reduces to 1.0 cycle, but AC/DC characteristics are not guaranteed. For normal operation at 300 MHz, DLL# must be held HIGH-typically tied to VDDQ via ≤10 kΩ resistor.

Is the UPD46185362BF1-E33-EQ1-A compatible with JTAG boundary-scan testing?

Yes, the UPD46185362BF1-E33-EQ1-A includes a fully compliant IEEE 1149.1 JTAG test access port (TMS, TDI, TCK, TDO) operating at 1.8 V I/O levels. This enables boundary-scan testing, in-system programming verification, and diagnostic access without requiring additional test fixtures-supporting production test coverage and field debug capabilities.