Renesas UPD46185364BF1-E40-EQ1-A

Overview

UPD46185364BF1-E40-EQ1-A from Renesas Electronics is a 524,288-word × 36-bit (18-Mbit) synchronous Quad Data Rate II (QDR II) SRAM with HSTL interface, 4-word burst operation, and 1.8 V core supply. It delivers 250 MHz clock frequency (4.0 ns cycle time), supports concurrent read/write ports, and is packaged in a 165-pin plastic BGA (13 × 15 mm) for high-density memory subsystems in network packet buffers and FPGA co-processor caches.

For engineers reviewing the UPD46185364BF1-E40-EQ1-A datasheet, UPD46185364BF1-E40-EQ1-A pinout, UPD46185364BF1-E40-EQ1-A application, or UPD46185364BF1-E40-EQ1-A equivalent, this page provides verified timing parameters, burst control logic, byte-write enable mapping, HSTL I/O compliance, and QDR II-specific clocking architecture - all validated against Renesas R10DS0113EJ0200 Rev.2.00.

Technical Context

This QDR II SRAM employs dual-clock architecture: K/K# registers address/control on rising edges, while C/C# govern output data timing with precise flight-time matching. Its internal burst counter and separate read/write data paths enable true concurrent transactions without arbitration delay.

The device integrates a PLL for jitter-tolerant operation down to 120 MHz, user-programmable output impedance (35–70 Ω via ZQ pin), and clock-stop capability with 20 μs recovery. All I/Os comply with JEDEC HSTL Class I, and write operations support granular 9-bit byte writes via BW0#–BW3# signals.

Key Specifications

Pinout & Package

Package: 165-pin plastic BGA (13 mm × 15 mm, 1.0 mm pitch), lead-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C2663KV18-400BZC and AS7C331024P-25BIN, UPD46185364BF1-E40-EQ1-A offers optimal balance of 250 MHz performance, 1.8 V low-power operation, and full QDR II feature set-including echo clocks, byte-write enables, and clock-stop-without demanding ultra-high-speed layout or voltage scaling.

Availability

UPD46185364BF1-E40-EQ1-A is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor cache, and telecom line card memory requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for UPD46185364BF1-E40-EQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The UPD46185364BF1-E40-EQ1-A belongs to Renesas' QDR II SRAM product line, engineered for high-throughput, low-latency memory subsystems in networking and high-performance computing where deterministic burst timing and concurrent access are critical.

FAQ

What is the memory organization and total capacity of UPD46185364BF1-E40-EQ1-A?

UPD46185364BF1-E40-EQ1-A is organized as 524,288 words × 36 bits, delivering 18,874,368 bits (18 Mbit) of total storage. This configuration supports 32-bit or wider data buses with native 36-bit granularity, eliminating bit-packing overhead in packet-processing and DSP applications. The device uses a full CMOS six-transistor memory cell fabricated in advanced CMOS technology.

Does UPD46185364BF1-E40-EQ1-A support concurrent read and write operations?

Yes, UPD46185364BF1-E40-EQ1-A features physically separate read and write data ports, enabling true concurrent transactions without arbitration delay. During a single clock cycle, it can accept new write data on D0–D35 while simultaneously delivering previously requested read data on Q0–Q35 - a key requirement for real-time network buffering and FPGA-accelerated compute pipelines.

What are the required power supply voltages and sequencing for UPD46185364BF1-E40-EQ1-A?

UPD46185364BF1-E40-EQ1-A requires VDD = 1.8 ± 0.1 V (core) and VDDQ = 1.4–1.8 V (I/O). Per Renesas R10DS0113EJ0200, power-up sequence must follow: VSS → VDD/VDDQ (simultaneous, ΔV ≤ 0.5 V) → VREF → VIN. Power-down reverses this order. DLL# must be held HIGH after power stabilization, and ≥20 μs stable clock is required before issuing the first NOP command.

How does the byte write functionality work on UPD46185364BF1-E40-EQ1-A?

UPD46185364BF1-E40-EQ1-A implements four active-low byte write enables: BW0#, BW1#, BW2#, and BW3#. Each controls a distinct 9-bit segment of the 36-bit data bus (D0–D8, D9–D17, D18–D26, D27–D35). When asserted LOW during a WRITE cycle, the corresponding byte is updated; all HIGH disables writes entirely. This eliminates need for read-modify-write sequences in partial updates.

What is the role of CQ and CQ# pins on UPD46185364BF1-E40-EQ1-A?

CQ and CQ# are synchronous echo clock outputs tightly matched to Q0–Q35 data edges. Their rising edges indicate valid data windows - CQ# aligns with first/third output words, CQ with second/fourth - enabling precise latch timing at the receiving device. Unlike C/C#, CQ/CQ# continue running even when Q outputs tristate, providing robust data-valid signaling independent of output enable state.